JPS6391947A - X-ray microanalyzer - Google Patents
X-ray microanalyzerInfo
- Publication number
- JPS6391947A JPS6391947A JP61235743A JP23574386A JPS6391947A JP S6391947 A JPS6391947 A JP S6391947A JP 61235743 A JP61235743 A JP 61235743A JP 23574386 A JP23574386 A JP 23574386A JP S6391947 A JPS6391947 A JP S6391947A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- image
- ray analysis
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 238000010894 electron beam technology Methods 0.000 claims abstract description 16
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000002441 X-ray diffraction Methods 0.000 abstract description 10
- 239000010419 fine particle Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＸ線マイクロアナライザーに関し、特に試料面
に付着する微粒子等のＸ線分析を可能にした装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an X-ray microanalyzer, and particularly to an apparatus that enables X-ray analysis of fine particles and the like adhering to a sample surface.
［従来技術］
近時、半導体等の製造分野ではシリコンウェハーや金属
等（以下試料と略する）の表面を鏡面状に研磨等したり
、精密加工したりする処理が行なわれており、このよう
な試料等はクリーンルーム等で加工、処理、保管される
。[Prior art] Recently, in the field of manufacturing semiconductors, etc., processes such as mirror polishing and precision processing of the surfaces of silicon wafers, metals, etc. (hereinafter referred to as samples) have been carried out. Samples, etc., are processed, processed, and stored in clean rooms, etc.
しかしながら、該材料がクリーンルーム等で厳重に管理
されて加工、処理、保管されたとしても、材料の製造過
程や取り扱いの過程で材料表面に僅かではあるが微細な
傷がついたり、ゴミ等の浮遊微粒子（０，３μｍ以下）
等が付着してしまう。However, even if the material is processed, treated, and stored under strict control in a clean room, etc., there may be slight scratches on the surface of the material during the manufacturing or handling process, or there may be floating particles of dust, etc. Fine particles (0.3 μm or less)
etc. will stick to it.
このように材料表面に分布する少数の微細な傷やゴミ等
の微粒子は半導体等の分野では性能等に直接影響を与え
るため、これらを分析してその発生原因や発生源を究明
する必要がある。In this way, a small number of minute scratches, dust, and other fine particles distributed on the surface of materials have a direct impact on performance in fields such as semiconductors, so it is necessary to analyze them to determine the cause and source of their occurrence. .
Ｃｆｅ明が解決しようとする問題点コ
ところで、これらを分析してその発生原因や発生源を究
明する手段としては、光学顕微鏡が内臓されたＸ線マイ
クロアナライザーが考えられるが、従来のＸ線マイクロ
アナライザーでは、該装置に組み込まれている落射照明
型の光学顕微鏡の分解能はせいぜい１μｍであるため、
光学顕微鏡の分解能の限界である１μｍ以下の微細な傷
やゴミ等の微粒子を識別しその存在位置を確認すること
は極めて困難であり、従って、１μｍ以下の微細な傷や
ゴミ等の微粒子を分析してその発生原因や発生源を究明
することができない。Problems that Cfe Ming is trying to solve By the way, an X-ray microanalyzer with a built-in optical microscope can be considered as a means to analyze these and find out the cause and source of their occurrence. In the analyzer, the resolution of the epi-illumination type optical microscope built into the device is at most 1 μm, so
It is extremely difficult to identify and locate microscopic scratches, dust, and other particles that are 1 μm or smaller, which is the limit of the resolution of an optical microscope. It is not possible to investigate the cause or source of the occurrence.
又、例えばシリコンウェハー等の大型試料（６〜８イン
チ）では、該試料表面に比較的広範囲にわたって分布す
る僅かな微細な傷や微粒子を分析するために、試料表面
の全域に電子線を照射して分析することは非常に時間が
かかり実用的でない。In addition, for large samples (6 to 8 inches) such as silicon wafers, electron beams are irradiated over the entire surface of the sample in order to analyze minute scratches and particles distributed over a relatively wide area on the sample surface. It is very time consuming and impractical to analyze
本発明は以上の点に鑑みなされたもので、例えばシリコ
ンウェハー等の比較的大型な試料の試料面の微細な傷や
、その面に付着する微粒子等の位置を確認してＸ線分析
を可能にした装置を提供することを目的としている。The present invention was developed in view of the above points, and enables X-ray analysis to be performed by confirming the position of minute scratches on the sample surface of a relatively large sample such as a silicon wafer, and the position of fine particles adhering to that surface. The aim is to provide a device that can
〔問題点を解決するための手段］
本目的を達成ザるための本発明は、試料に電子線を照射
するための電子光学系と、前記電子線の照ｑ・１により
試料から発生ずるＸ線を分析する手段と、前記試料を移
動させる試料移動手段、前記電子光学系に相違まれた光
学顕微鏡と、該光学顕微鏡の結像面に該光学顕微鏡によ
る試料の光学像を撮会する記像装置とを備えた装置にお
いて、前記試料にレーザ光を照射するためのレーザ照射
手段を設けたことを特徴としている。[Means for Solving the Problems] The present invention for achieving the above object includes an electron optical system for irradiating a sample with an electron beam, and an electron optical system for irradiating a sample with an electron beam a means for analyzing a line, a sample moving means for moving the sample, an optical microscope different from the electron optical system, and a recording device for taking an optical image of the sample by the optical microscope on an imaging plane of the optical microscope. The apparatus is characterized in that a laser irradiation means for irradiating the sample with laser light is provided.
［実施例］ 以下図面に基づぎ本発明の実施例を詳述する。[Example] Embodiments of the present invention will be described in detail below based on the drawings.
第１図は本発明の一実施例を説明するための図で、１は
図示しない電子線発生源よりの電子線、２は集束レンズ
、３は対物レンズ、４は走査コイルである。５は電子線
１が照射される試料、６は試料移動装置、７はＸ線検出
装置である。８はランプ等が内臓された光照射部、９は
光照射部８の光路内に配置された焦点合せのためのクロ
スマーク、１０はハーフミラ−１１１は反射鏡、１２は
光学反射対物レンズ、１３は接眼レンズであり、これら
によって光学顕微鏡が形成されている。１４は光路内に
配置された路像管用ハーフミラ−１１５は撮像装置であ
る。１６は試料面上を照射するための例えばヘリウム−
ネオン（Ｈｅ−Ｎｅ＞レーザー発振器、１７は２次電子
検出器、１８は陰極線管である。FIG. 1 is a diagram for explaining one embodiment of the present invention, in which 1 is an electron beam from an electron beam generation source (not shown), 2 is a focusing lens, 3 is an objective lens, and 4 is a scanning coil. 5 is a sample to which the electron beam 1 is irradiated, 6 is a sample moving device, and 7 is an X-ray detection device. Reference numeral 8 denotes a light irradiation unit including a built-in lamp, 9 a cross mark for focusing placed in the optical path of the light irradiation unit 8, 10 a half mirror, 111 a reflector, 12 an optical reflective objective lens, 13 are eyepiece lenses, and together they form an optical microscope. Reference numeral 14 denotes an image tube half mirror 115 disposed in the optical path, which is an imaging device. 16 is for example helium for irradiating the sample surface.
Neon (He-Ne>laser oscillator, 17 is a secondary electron detector, and 18 is a cathode ray tube.
以上のように構成された装置において、例えばシリコン
ウェハーである試料５の表面に存在する微粒子ａの位置
を確ルＥ シＸ線分析を行なう場合について説明する。In the apparatus configured as described above, a case will be described in which X-ray analysis is performed to determine the position of fine particles a present on the surface of a sample 5, which is, for example, a silicon wafer.
先ず、光照射部８内のランプを点灯すると、該光照射部
８よりの光はクロスマーク９．ハーフミラ−１０を経て
反射鏡１１により電子線１と同軸となり、光学反射対物
レンズ１２の前方焦点面に光源の像が結ばれる。又、該
光学反射対物レンズ１２はクロスマーク９の像を試料５
の表面近傍に結ぶ。従って、光照射部８よりの光の照射
に伴う試料５の像は光学反射対物レンズ１２によって接
眼レンズ１３の前方の結像位置Ａにできるため、該試料
５の物点の像を接眼レンズ１３によって拡大して肉眼で
観察することができる。この観察で、試料移動装置６を
操作し、クロスマーク９の像が試料５の表面に正確に結
像されるように、試料５を光軸方向に移動させる。この
場合に、試料５の表面が研磨され凹凸が無く、光学顕微
鏡では焦点が合せられないような場合には、光路内の結
像位置Ａの近傍にはＲ像管用ミラー１４が移動可能に配
置されているため、該ミラー１４の位置を調整して、搬
＠装置１５の受光面にクロスマーク９の像を結像させて
観察することにより、凹凸の少ない鏡面状の試料におい
ても焦点合せを確実に行なうことができる。First, when the lamp in the light irradiation section 8 is turned on, the light from the light irradiation section 8 hits the cross mark 9. After passing through a half mirror 10, it becomes coaxial with the electron beam 1 by a reflecting mirror 11, and an image of the light source is focused on the front focal plane of an optical reflective objective lens 12. Further, the optical reflection objective lens 12 converts the image of the cross mark 9 into the sample 5.
Tie near the surface of the Therefore, the image of the sample 5 caused by the irradiation of light from the light irradiation unit 8 can be formed at the image position A in front of the eyepiece 13 by the optical reflection objective lens 12, so that the image of the object point of the sample 5 can be focused on the eyepiece 13. It can be enlarged and observed with the naked eye. During this observation, the sample moving device 6 is operated to move the sample 5 in the optical axis direction so that the image of the cross mark 9 is accurately formed on the surface of the sample 5. In this case, if the surface of the sample 5 is polished and has no irregularities and cannot be focused using an optical microscope, an R picture tube mirror 14 is movably arranged near the imaging position A in the optical path. Therefore, by adjusting the position of the mirror 14 and observing the image of the cross mark 9 on the light-receiving surface of the transport device 15, it is possible to focus even on a mirror-like sample with few irregularities. It can be done reliably.
次に、光照射部６内のランプを消灯して、Ｈｅ−Ｎｅレ
ーザー発振器１６からの例えば波長６３２８人、光径６
００μｍのレーザ光りを試料面に照射する。ここで、該
レーザ発振器１６は、光学顕微鏡の焦点位置に照射され
るように配置されており、又、レーザ発振器１６よりの
レーザ光りは拡散することなく照射されるため、第２図
に示すように光学顕微鏡の観察範囲Ａ （４００μｍ）
はレーザ照射範囲Ｂ （６００μｍ）によってその全域
に亘って照射される。このレーザ光りの照射によって、
試料３の表面のレーザー照射範囲Ｂの範囲内に例えば微
粒子ａが存在する場合は、該微粒子ａからは散乱光が発
生する。該散乱光は、光のコヒーレンス性によって干渉
及び回折を起し易く、従って、低倍率でも実際の大きさ
よりもはるかに拡がりを持って散乱光が観察されるため
、従来光学顕微鏡では観察されなかった微粒子ａの存在
を九像装置１５によって暗視野像として観察することが
できる。又、Ｈｅ−Ｎｅレーザー光りとしては、その波
長が、２次電子検出器１７内の光電子増倍管の不感域の
波長となる短いもの、即ち、Ｈｅ−Ｎｅレーザー光が選
択されている。Next, the lamp in the light irradiation unit 6 is turned off, and the light emitted from the He-Ne laser oscillator 16, for example, with a wavelength of 6328 and a light diameter of 6.
A laser beam of 00 μm is irradiated onto the sample surface. Here, the laser oscillator 16 is arranged so as to irradiate the focal position of the optical microscope, and since the laser light from the laser oscillator 16 is irradiated without being diffused, as shown in FIG. Observation range A of optical microscope (400μm)
is irradiated over the entire area by laser irradiation range B (600 μm). By irradiating this laser light,
If, for example, fine particles a exist within the laser irradiation range B on the surface of the sample 3, scattered light is generated from the fine particles a. The scattered light tends to cause interference and diffraction due to the coherence property of the light, and therefore, even at low magnification, the scattered light is observed with a much wider spread than the actual size, so it has not been observed with conventional optical microscopes. The presence of the fine particles a can be observed as a dark field image using the nine-image device 15. Further, as the He--Ne laser beam, one whose wavelength is short enough to be the wavelength of the insensitive region of the photomultiplier tube in the secondary electron detector 17, that is, the He--Ne laser beam is selected.
従って、このように構成された装置では、レーザー発振
器１６からレーザ光りを試料面に照射して試料５を水平
方向に移動させ、この移動によって、撮像装置１５−に
輝点Ｐが観察されたならば、この輝点Ｐを第３図に示す
ようにｗＬ像装置１５のクロスマークＭの交点の位置（
通常は表示画面の中央）に移動する。これによって微粒
子ａの位置を確実に確認することができる。又、微粒子
ａの暗視野像を観察しながら電子線１を試料５に照射し
て、試料５より発生ずる２次電子ｅを２次電子検出器１
７によって検出して陰極線管１８に表示すれば、該微粒
子ａは２次電子像のほぼ中央に位置するので、かなりの
高倍率でも該微粒子ａが走査像内に観察される。従って
、鏡面性の試料でも高倍率での走査画観察に基づく焦点
合せや、非点補正を簡単に視野設定して行なうことがで
きる。Therefore, in the apparatus configured in this way, if the sample surface is irradiated with laser light from the laser oscillator 16 and the sample 5 is moved in the horizontal direction, and as a result of this movement, a bright spot P is observed on the imaging device 15-. For example, as shown in FIG.
(usually the center of the display screen). This makes it possible to reliably confirm the position of the fine particles a. Also, while observing the dark field image of the particles a, the sample 5 is irradiated with the electron beam 1, and the secondary electrons e generated from the sample 5 are detected by the secondary electron detector 1.
7 and displayed on the cathode ray tube 18, the fine particle a is located approximately at the center of the secondary electron image, so that the fine particle a can be observed in the scanned image even at a considerably high magnification. Therefore, even with a specular sample, focusing and astigmatism correction can be easily performed by setting the field of view based on scanning image observation at high magnification.
これによって、該微粒子ａの形状も暗視野像と共に同時
に観察することができる。この状態で、電子線１のビー
ム電流をＸ線分析に適した値に設定し、該電子線１を微
粒子ａに照射して、該微粒子ａから発生するＸ線をＸ線
検出装置７によってＸ線分析することができる。従って
、試料全域を分析しなくても試料５の表面に広い範囲に
わたって点在する微粒子ａを短時間で発見し、その位置
及び形状を確実に確認してＸ線分析を短時間で行なうこ
とができる。Thereby, the shape of the fine particles a can be observed simultaneously with the dark field image. In this state, the beam current of the electron beam 1 is set to a value suitable for X-ray analysis, the particle a is irradiated with the electron beam 1, and the X-rays generated from the particle a are detected by the X-ray detector 7. Line analysis can be performed. Therefore, it is possible to quickly discover the fine particles a scattered over a wide area on the surface of the sample 5, to confirm their position and shape, and to perform X-ray analysis in a short time without having to analyze the entire sample. can.
上記は例示であり変型が可能である。上記実施例では、
Ｈｅ−Ｎｅレーザー発振器を使用したが、これに限定さ
れるものでなく、分析対象、２次電子検出器の特性を考
慮して他の発振器を選択すれば良い。The above is an example and modifications are possible. In the above example,
Although a He-Ne laser oscillator is used, the present invention is not limited to this, and other oscillators may be selected in consideration of the object to be analyzed and the characteristics of the secondary electron detector.
又、撮像装置１５の使用目的を微粒子等の存在を確認す
るだけでなく、その位置信号を検出し、該位置信号によ
って試料移動装置を制御して電子線１を微粒子に照射す
るように構成して自動Ｘ線分析システムとしても良い。Further, the purpose of use of the imaging device 15 is not only to confirm the presence of particles, etc., but also to detect their position signals, and use the position signals to control the sample moving device to irradiate the particles with the electron beam 1. It may also be used as an automatic X-ray analysis system.
［発明の効果］
以上詳述したように本発明によれば、試料にレーザ光を
照射して試料上に存在する微粒子等よりの散乱光によっ
て撮像装置に暗視野像として表示するようにしたため、
従来光学顕微鏡では観察されなかった試料の表面の比較
的広い範囲に存在する微粒子等の存在を短時間で確認し
てＸ線分析を行うことができるため、その発生原因や発
生源の究明に役く立てることができる。[Effects of the Invention] As described in detail above, according to the present invention, the sample is irradiated with laser light and the scattered light from fine particles present on the sample is displayed as a dark field image on the imaging device.
X-ray analysis can quickly confirm the presence of fine particles that exist in a relatively wide area on the surface of a sample, which could not be observed with conventional optical microscopes, which is useful for investigating the cause and source of their occurrence. can be built up.
第１図は本発明の一実施例の構成図、第２図及び第３図
は本発明を説明するための図である。
１：電子線、２は集束レンズ、３：対物レンズ、４：走
査コイル、５：試料、６：試料移動装置、７：Ｘ線検出
装置、８：光照射部、９：クロスマーク、１０：ハーフ
ミラ−，１１：反射鏡、１２：光学反射対物レンズ、１
３：接眼レンズ：１４：撮像管用ミラー、１５：撮像装
置、１６：ヘリウム−ネオン（Ｈｅ−Ｎｅ）レーザー発
振器、１７：２次電子検出器、１８：陰極線管。FIG. 1 is a block diagram of an embodiment of the present invention, and FIGS. 2 and 3 are diagrams for explaining the present invention. 1: Electron beam, 2 is a focusing lens, 3: Objective lens, 4: Scanning coil, 5: Sample, 6: Sample moving device, 7: X-ray detection device, 8: Light irradiation unit, 9: Cross mark, 10: Half mirror, 11: Reflector, 12: Optical reflective objective lens, 1
3: Eyepiece lens: 14: Mirror for image pickup tube, 15: Image pickup device, 16: Helium-neon (He-Ne) laser oscillator, 17: Secondary electron detector, 18: Cathode ray tube.
Claims (2)
記電子線の照射により試料から発生するＸ線を分析する
手段と、前記試料を移動させる試料移動手段、前記電子
光学系に組込まれた光学顕微鏡と、該光学顕微鏡の結像
面に該光学顕微鏡による試料の光学像を撮像する撮像装
置とを備えた装置において、前記試料にレーザ光を照射
するためのレーザ照射手段を設けたことを特徴とするＸ
線マイクロアナライザー。(1) An electron optical system for irradiating the sample with an electron beam, a means for analyzing X-rays generated from the sample by irradiation with the electron beam, and a sample moving means for moving the sample, which are incorporated into the electron optical system. and an imaging device for capturing an optical image of a sample by the optical microscope on an imaging surface of the optical microscope, the apparatus further comprising a laser irradiation means for irradiating the sample with laser light. X characterized by
line microanalyzer.
生器である特許請求の範囲第１項記載のＸ線マイクロア
ナライザー。(2) The X-ray microanalyzer according to claim 1, wherein the laser irradiation means is a helium-neon laser generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235743A JPS6391947A (en) | 1986-10-03 | 1986-10-03 | X-ray microanalyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235743A JPS6391947A (en) | 1986-10-03 | 1986-10-03 | X-ray microanalyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6391947A true JPS6391947A (en) | 1988-04-22 |
| JPH0528466B2 JPH0528466B2 (en) | 1993-04-26 |
Family
ID=16990563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61235743A Granted JPS6391947A (en) | 1986-10-03 | 1986-10-03 | X-ray microanalyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6391947A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250220A (en) * | 2006-03-14 | 2007-09-27 | Hitachi High-Technologies Corp | Sample observation method, image processing device, and charged particle beam device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833154A (en) * | 1981-08-24 | 1983-02-26 | Hitachi Ltd | Inspecting device |
| JPS60189856A (en) * | 1984-03-10 | 1985-09-27 | Jeol Ltd | X-ray microanalyzer and similar device |
-
1986
- 1986-10-03 JP JP61235743A patent/JPS6391947A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833154A (en) * | 1981-08-24 | 1983-02-26 | Hitachi Ltd | Inspecting device |
| JPS60189856A (en) * | 1984-03-10 | 1985-09-27 | Jeol Ltd | X-ray microanalyzer and similar device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250220A (en) * | 2006-03-14 | 2007-09-27 | Hitachi High-Technologies Corp | Sample observation method, image processing device, and charged particle beam device |
| JP4734148B2 (en) * | 2006-03-14 | 2011-07-27 | 株式会社日立ハイテクノロジーズ | Sample observation method, image processing apparatus, and charged particle beam apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0528466B2 (en) | 1993-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |