JPS6390016A - Substrate material for thin film magnetic head - Google Patents
Substrate material for thin film magnetic headInfo
- Publication number
- JPS6390016A JPS6390016A JP61235147A JP23514786A JPS6390016A JP S6390016 A JPS6390016 A JP S6390016A JP 61235147 A JP61235147 A JP 61235147A JP 23514786 A JP23514786 A JP 23514786A JP S6390016 A JPS6390016 A JP S6390016A
- Authority
- JP
- Japan
- Prior art keywords
- tic
- thin film
- al2o3
- improved
- film magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 title claims description 13
- 239000000919 ceramic Substances 0.000 abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052593 corundum Inorganic materials 0.000 abstract description 7
- 239000011148 porous material Substances 0.000 abstract description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract description 6
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract description 6
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 abstract description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- 229910010062 TiCl3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012496 blank sample Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Hard Magnetic Materials (AREA)
- Thin Magnetic Films (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、コンピュータの周辺装置であるフロッピーデ
ィスク装置やハードディスク装置に絹み込まれる磁気ヘ
ッドの基板材料で、特に薄膜磁気ヘッドの非磁性基板材
料に間するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a substrate material for a magnetic head incorporated in a floppy disk device or a hard disk device which is a peripheral device of a computer, and in particular to a non-magnetic substrate for a thin film magnetic head. It is something that is used for materials.
以下余白
〔従来の技術〕
一般にコンピュータ、Ｖ Ｔ Ｒ，又はオーディオ関係
の磁気ヘッドは、磁性材料であるフェライトと非磁性材
料のセラミックスをガラスボンディングして構成されて
いる。これに対し薄膜磁気ヘットの場合には、磁性ある
いは非磁性セラミックス基板上へセンダスト、パーマロ
イなとの磁性薄膜をメッキ、蒸着あるいはスパッタリン
グして成膜し作製される。一般的には、薄膜型磁気ヘッ
トの基板材料としては、Ａｌ２Ｏ３−ＴｉＣセラミック
スが用いられているが、この理由として、他材料に比較
し耐摩耗性に優れている事、基板上に成膜される磁性膜
とのぬれ性が良い事なとがあげられる。近年デジタル磁
気記録用ヘットは、高記録密度化への技術推移に伴って
より小型化、狭ギャップ化、高信頼性化が要求されてき
ている。このため、薄膜型磁気ヘットの基板材料として
は、高密度で気孔が少ない事、耐摩耗特性に優れている
事、加工性に優れている事などが要求される。具体的に
は、理論密度の９９．９５％以上の相対密度が必要であ
り、耐摩耗性の点ではビッカース硬度で２５００以上の
硬度が必要である。ところが一般に薄膜磁気ヘットの基
板材料として用いられているＡｌ２Ｏ３−ＴｉＣセラミ
ックスはＡｌ２Ｏ３とＴｉＣとの間のぬれ性が良くない
事から焼結性が悪く、残存する気孔が多い。また加工性
も極めて悪く小型化の要求に対応できない。ところで、
現在用いられているＡ１２０３−ＴｉＣセラミックスの
製造方法としてはＨＩＰ（熱間静水圧プレス）法を利用
したものがあげられるが、ＨＩＰ処理によるち密化の効
果を得るためには、その前処理として相対密度９５％以
上の焼結体を得る事が必要となる。2. Description of the Related Art Magnetic heads for computers, VTRs, or audio devices are generally constructed by glass-bonding ferrite, which is a magnetic material, and ceramic, which is a non-magnetic material. On the other hand, in the case of a thin film magnetic head, a magnetic thin film such as sendust or permalloy is formed on a magnetic or non-magnetic ceramic substrate by plating, vapor deposition or sputtering. Generally, Al2O3-TiC ceramics are used as the substrate material for thin-film magnetic heads. One of the advantages is that it has good wettability with the magnetic film. In recent years, digital magnetic recording heads have been required to be smaller, have narrower gaps, and have higher reliability as technology advances toward higher recording densities. For this reason, substrate materials for thin-film magnetic heads are required to have high density, few pores, excellent wear resistance, and excellent workability. Specifically, a relative density of 99.95% or more of the theoretical density is required, and in terms of wear resistance, a Vickers hardness of 2500 or more is required. However, Al2O3-TiC ceramics, which is generally used as a substrate material for thin-film magnetic heads, has poor sinterability due to poor wettability between Al2O3 and TiC, and has many residual pores. Furthermore, the workability is extremely poor and it cannot meet the demand for miniaturization. by the way,
The currently used manufacturing method for A1203-TiC ceramics is the HIP (hot isostatic pressing) method. It is necessary to obtain a sintered body with a density of 95% or more.
しかし、Ａ１２０３−ＴｉＣセラミックスは焼結性が悪
いため、 １８５０℃〜１９００℃の高温での焼結を行
わないと相対密度９５％以上のものは得られない。さら
に、この様な高温にさらされるためＡｌ２Ｏ３、ＴｉＣ
粒子の著しい粒成長が起こり機械強度が低下し、故に加
工性の低下も見られ、また高温処理のために作業性が悪
く、省エネルギーの観点からも問題があった。However, since A1203-TiC ceramics have poor sinterability, a relative density of 95% or higher cannot be obtained unless sintered at a high temperature of 1850°C to 1900°C. Furthermore, due to exposure to such high temperatures, Al2O3, TiC
Significant grain growth occurs, resulting in a decrease in mechanical strength, resulting in a decrease in workability.Furthermore, workability is poor due to high-temperature treatment, and there are also problems from the perspective of energy conservation.
このため、Ａｌ２Ｏ３とＴｉＣの主成分に対して副成分
を添加する試みがなされ、例えば、特開昭５６−１４０
０６８、特開昭５７−２０５３７２などに開示されてい
る。For this reason, attempts have been made to add subcomponents to the main components of Al2O3 and TiC.
068, Japanese Patent Application Laid-Open No. 57-205372, etc.
本発明は上記のような諸問題を解決すべく研究した結果
、焼結促進効果を示す添加物と粒成長抑制効果を示す添
加物とを同時に添加する事により良好な基板を得る事を
可能としたものである。As a result of research to solve the above-mentioned problems, the present invention has revealed that it is possible to obtain a good substrate by simultaneously adding an additive that promotes sintering and an additive that inhibits grain growth. This is what I did.
本発明は、上記の問題点に鑑みて、焼結性に優れ、従っ
て高密度かつ気孔が少なく、耐摩耗性に優れ、良好な加
工特性を示す薄膜磁気ヘラＩ・用基板材料を提供するも
のである。In view of the above-mentioned problems, the present invention provides a substrate material for a thin film magnetic spatula I that has excellent sinterability, has high density, has few pores, has excellent wear resistance, and has good processing characteristics. It is.
本発明者は種々の実験を行った結果、ＴｉＣｌ３〜６０
ｗｔ％、残部Ａｌ２Ｏ３よりなる主成分１００ ｗ ｔ
％に対し、 Ｌ ａ ２０３、Ｃｅ Ｏ２、Ｓ ｍ２０
３の一種又は二種以上を１〜１０ ｗ ｔ％添加する事
により、Ａｌ２Ｏ３とＴｉＣとの間のぬれ性が向上する
ため、焼結性が向上し残存する気孔が少なく相対密度９
９．９５％以上を示し、かつ耐摩耗性に優れ、さらに粒
成長抑制効果を示す添加物であるＣ ｒ ２０３、Ｔ
ｉ ０２、Ｎ ｉ Ｏを１〜５ｗｔ％添加する事で小粒
径組織とし加工性に優れた薄膜磁気ヘッド用基板材料を
容易に製造するものである。As a result of various experiments, the inventor found that TiCl3~60
wt%, main component consisting of balance Al2O3 100 wt
%, L a 203, Ce O2, S m20
By adding 1 to 10 wt% of one or more of 3, the wettability between Al2O3 and TiC is improved, so the sinterability is improved and there are few remaining pores, resulting in a relative density of 9.
9.95% or more, has excellent wear resistance, and is an additive that exhibits a grain growth suppressing effect.
By adding 1 to 5 wt% of i02,NiO, a thin film magnetic head substrate material with a small grain size structure and excellent workability can be easily produced.
以下本発明を実施例に従って詳細に説明する。The present invention will be explained in detail below according to examples.
平均粒径０．１〜０．２μｍ、純度９９％以上のＡｌ２
Ｏ３、ＴｉＣ，Ｌａ２Ｏ３、ＣｅＯ２、Ｓｍ２Ｏ３、Ｃ
ｒ２Ｏ３、Ｔ ｉ ０２、ＮｉＯの各粉末原料を表−１
に示す組成比となるように秤量し、Ｎａ １〜Ｎｔ１１
６の各試料とした。なおＬａ２Ｏ３、ＣｅＯ２、Ｓｍ２
０３（添加物Ｂ）の各秤量値およびＣｒ２Ｏ３、ＴｉＯ
２、ＮｉＯ（添加物Ｃ）の各秤量値は、すべてＡｌ２Ｏ
３とＴｉＣを合わせて１００ ｗ ｔ％とした主成分に
対する割合である。また試料Ｎα８〜１６は比較のため
のものである。Al2 with an average particle size of 0.1 to 0.2 μm and a purity of 99% or more
O3, TiC, La2O3, CeO2, Sm2O3, C
Table 1 shows the powder raw materials of r2O3, T i 02, and NiO.
Weighed so that the composition ratio shown in
6 samples. Note that La2O3, CeO2, Sm2
Each weighed value of 03 (additive B) and Cr2O3, TiO
2. All weighed values of NiO (additive C) are Al2O
3 and TiC together account for 100 wt% of the main components. Moreover, samples Nα8 to Nα16 are for comparison.
各試料をそれぞれ上述のように秤量後エタノールを溶媒
とし、ボールミルにて２０〜４０時間混合し、濾過、乾
燥後有機系バインダーを添加し、３０ ｍｍ Ｘ ３０
ｍｍ Ｘ １０ ｍｍのブロック体に加圧成形した。After weighing each sample as described above, using ethanol as a solvent, mixing in a ball mill for 20 to 40 hours, filtering and drying, adding an organic binder, and preparing a 30 mm x 30
It was press-molded into a block of mm x 10 mm.
さらにこれをＡ「ガス雰囲気中で１７００℃の温度で２
時間の焼結を行った後、Ａ「ガスを圧力媒体として用い
、圧力１０００ｋｇ／ｃ＋ｎ２、温度１６００℃、保持
時間２時間の条件で熱間静水圧プレス（ＨＩ Ｐ）処理
を行った。Furthermore, this was
After sintering for an hour, hot isostatic pressing (HIP) was performed using A gas as a pressure medium under the conditions of a pressure of 1000 kg/c+n2, a temperature of 1600° C., and a holding time of 2 hours.
以上の工程により得られた各試料よりそれぞれ５ ｍ＋
ｎ Ｘ ５ ｍｍ Ｘ ２０ ｍｍの角柱を切り出した
後、該角柱の隣接する５ＩＩＩｗｌ×２０１１ＩＩ１１
の２面をそれぞれ鏡面に加工し、陵部に生じた２×２μ
ｍ以上のチッピング数を１０００倍の倍率を有する光学
顕微鏡を用いてカウントし、 １ ａｍ当りのチッピン
グ発生率に換算し、加工性の評価項目とした。なおチッ
ピングの大きさをその長さ別に２〜１０μｍ、１１〜５
０μｍ、５１μｍ以上に分類した。また、各試料の破断
面について、走査型電子顕微鏡を用いて５０〜１００ケ
の粒子の径を測定し、その平均値をもって各試料の粒径
とした。さらに、機械強度の評価項目として、ビッカー
ス硬度Ｈｖ（荷重ｌｋｇ）及び抗折強度Ｆを測定した。5 m+ from each sample obtained through the above steps.
After cutting out a prism of n x 5 mm x 20 mm, the adjacent 5IIIwl x 2011II11 of the prism
The two sides of the two sides are processed into mirror surfaces, and the 2×2 μ
The number of chippings of m or more was counted using an optical microscope with a magnification of 1000 times, and was converted into a chipping incidence rate per 1 am, which was used as an evaluation item for workability. In addition, the size of chipping is 2 to 10 μm and 11 to 5 μm depending on the length.
It was classified into 0 μm and 51 μm or more. Furthermore, the diameters of 50 to 100 particles were measured on the fractured surface of each sample using a scanning electron microscope, and the average value was taken as the particle size of each sample. Furthermore, Vickers hardness Hv (load 1 kg) and bending strength F were measured as mechanical strength evaluation items.
また、アルキメデス法により、各試料の密度を測定し、
理論密度に対する相対密度を計算した。以上の結果を表
−１に示す。In addition, the density of each sample was measured using the Archimedes method,
The relative density to the theoretical density was calculated. The above results are shown in Table-1.
以下余白
試料Ｎα１〜７０本発明例と試料Ｎα８〜１６の比較例
から明かな様に、Ｌａ２Ｏ３、ＣｅＯ２、Ｓ ｍ ２０
３の一種又は二種以上を１〜１０ ｗ ｔ％添加すると
ともに、Ｃｒ２Ｏ３、ＴｉＯ２、ＮｉＯの一種又は二種
以上を１〜５ ｗ ｔ％添加した場合、無添加例（Ｎａ
８ ）に比較し、ビッカース硬度Ｈｖは５００〜７０
０の著しい向上を示し、比較例（＋１１［１８）の相対
密度９１．０５％に較へて本発明例（これは焼結性が著
しく向上し、なおかつ、粒成長が見られないことを示し
ている。さらに、抗折強度Ｆの値も２倍以上上昇してい
る。As is clear from the following comparative examples of blank samples Nα1 to 70 of the present invention and samples Nα8 to 16, La2O3, CeO2, S m 20
When 1 to 10 wt% of one or more of 3 is added, and 1 to 5 wt% of one or more of Cr2O3, TiO2, and NiO is added, no addition example (Na
8), Vickers hardness Hv is 500-70
Compared to the relative density of the comparative example (+11[18), which was 91.05%, the present invention example (this indicates that the sinterability was significantly improved and no grain growth was observed). Furthermore, the value of the bending strength F also increased by more than twice.
以上、密度の上昇、機械強度の向上、組織の微細化のた
めにチッピング発生率も低く加工性が改善されている事
が分かる。なお、本発明例（Ｎα１〜Ｎα７）において
、２〜１０μｍのチッピングがわずかに発生しているが
、粒径に対してさほど大きくないチッピングで数も少な
いため十分に無視できる。From the above, it can be seen that the chipping rate is low and the workability is improved due to the increased density, improved mechanical strength, and finer structure. In addition, in the examples of the present invention (Nα1 to Nα7), a slight amount of chipping of 2 to 10 μm occurs, but since the chipping is not so large compared to the particle size and the number is small, it can be sufficiently ignored.
これに対しＬａ２Ｏ３、ＣｅＯ２、Ｓｍ２Ｏ３の一種又
は二種以上の添加量が１ ｗ １％未満の場合（Ｎａ
９〜１１）相対密度が低く、十分焼結されないため粒成
長はみられないが、焼結性は改善されず相対密度も９１
％と低く、又チッピングも２〜１０μｍのものが多発し
ている。さらに１１μｍ以上のチッピングも発生してい
る。On the other hand, when the amount of one or more of La2O3, CeO2, and Sm2O3 added is less than 1 w 1% (Na
9-11) Grain growth is not observed because the relative density is low and it is not sufficiently sintered, but the sinterability is not improved and the relative density is 91
%, and chipping of 2 to 10 μm frequently occurs. Furthermore, chipping of 11 μm or more also occurred.
一方Ｃｒ２Ｏ３、ＴｉＯ２、ＮｉＯの一種又は二種量−
上の添加量が１ ｗ １％未満の場合（Ｎａ１２．１４
）相対密度は高く、焼結性も向上しているが、粒成長抑
制効果は見られず、よって１１〜５０μｍの中程度のチ
ッピングの発生率が本発明例に比較し多くなっている。On the other hand, one or two amounts of Cr2O3, TiO2, NiO-
If the above addition amount is less than 1w 1% (Na12.14
) Although the relative density is high and the sinterability is improved, no effect of suppressing grain growth is observed, and therefore, the incidence of moderate chipping of 11 to 50 μm is higher than in the examples of the present invention.
又添加量が５ ｗ ｔ％を越えると（Ｎα１３）逆に焼
結性の低下を引起し、相対密度は上がらない。Moreover, if the amount added exceeds 5 wt% (Nα13), the sinterability will decrease and the relative density will not increase.
又、試料Ｎａ１Ｂでは添加物Ｂ、 Ｃとも本発明の範
囲を越えている。この場合粒界相に添加物が偏析し強度
の低下をきたし故にチッピングも多発している。Furthermore, in sample Na1B, both additives B and C are beyond the scope of the present invention. In this case, additives segregate in the grain boundary phase, resulting in a decrease in strength and, therefore, frequent chipping.
従って、Ｌａ２Ｏ３、ＣｅＯ２、Ｓ ｍ ２０ ｇの一
種又は二種以上を１〜１０ｗｔ％添加するとともにＣｒ
２Ｏ３、ＴｉＯ２、ＮｉＯの一種もしくは二種以上を１
〜５ ｗ ｔ％添加する事で機械特性及び加工性に優れ
た高密度セラミックス基板材料が得られる事が分かった
。Therefore, while adding 1 to 10 wt% of one or more of La2O3, CeO2, and S m 20 g, Cr
One or more types of 2O3, TiO2, NiO
It has been found that by adding ~5 wt%, a high-density ceramic substrate material with excellent mechanical properties and workability can be obtained.
これは添加物Ｂ、 Ｃの添加量が上記範囲内の時に、
添加物Ｂの焼結促進効果と添加物Ｃの粒成長抑制効果の
相乗効果が最大となるためである。This means that when the amount of additives B and C is within the above range,
This is because the synergistic effect of the sintering promoting effect of additive B and the grain growth suppressing effect of additive C is maximized.
カース硬度Ｈｖが２０００以下となり、また６０％以上
では焼結性が著しく低下し密度が向上しないため、主成
分のＴｉＣ量を１５〜６０ ｗ ｔ％に限定している。The amount of TiC as the main component is limited to 15 to 60 wt% because the Keras hardness Hv is 2000 or less, and if it is 60% or more, the sinterability is significantly reduced and the density is not improved.
（発明の効果〕
以上の結果から明らかな様に、本発明によれば、従来、
製造の困難であった耐摩耗性に優れ、気孔が少なく、機
械加工性も良好な薄膜磁気ヘッド用高密度セラミックス
基板材料を容易に製造する事ができた。(Effect of the invention) As is clear from the above results, according to the present invention, conventionally,
We were able to easily produce a high-density ceramic substrate material for thin-film magnetic heads that has excellent wear resistance, few pores, and good machinability, which had been difficult to produce.
ｌＯ−lO-
Claims (1)
より成る主成分１００重量部に対し、さらにＬａ＿２Ｏ
＿３、ＣｅＯ＿２、Ｓｍ＿２Ｏ＿３の一種又は二種以上
を１〜１０ｗｔ％、Ｃｒ＿２Ｏ＿３、ＴｉＯ＿２、Ｎｉ
Ｏの一種又は二種以上を１〜５ｗｔ％添加する事を特徴
とする薄膜磁気ヘッド用基板材料。Contains 15 to 60 wt% TiC, balance Al_2O_3
In addition to 100 parts by weight of the main component consisting of La_2O
_3, 1 to 10 wt% of one or more of CeO_2, Sm_2O_3, Cr_2O_3, TiO_2, Ni
A substrate material for a thin film magnetic head, characterized in that 1 to 5 wt% of one or more types of O is added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235147A JPS6390016A (en) | 1986-10-01 | 1986-10-01 | Substrate material for thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235147A JPS6390016A (en) | 1986-10-01 | 1986-10-01 | Substrate material for thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6390016A true JPS6390016A (en) | 1988-04-20 |
| JPH0373044B2 JPH0373044B2 (en) | 1991-11-20 |
Family
ID=16981748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61235147A Granted JPS6390016A (en) | 1986-10-01 | 1986-10-01 | Substrate material for thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390016A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53105513A (en) * | 1977-02-25 | 1978-09-13 | Ngk Spark Plug Co | Method of manufacturing ceramic sintered articles |
| JPS57135772A (en) * | 1981-01-09 | 1982-08-21 | Nippon Tungsten | Material for alumina magnetic head |
| JPS5926967A (en) * | 1982-07-29 | 1984-02-13 | 松下電器産業株式会社 | Manufacture of ceramic for thin film substrate |
| JPS60231308A (en) * | 1984-05-01 | 1985-11-16 | Sumitomo Special Metals Co Ltd | Alumina magnetic head substrate material and manufacture thereof |
| JPS60260464A (en) * | 1984-06-01 | 1985-12-23 | ダイジヱツト工業株式会社 | Ceramic sintered body and manufacture |
| JPS61158862A (en) * | 1984-12-29 | 1986-07-18 | ティーディーケイ株式会社 | Magnetic head slider material |
| JPS632855A (en) * | 1986-06-20 | 1988-01-07 | ティーディーケイ株式会社 | Ceramic material |
-
1986
- 1986-10-01 JP JP61235147A patent/JPS6390016A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53105513A (en) * | 1977-02-25 | 1978-09-13 | Ngk Spark Plug Co | Method of manufacturing ceramic sintered articles |
| JPS57135772A (en) * | 1981-01-09 | 1982-08-21 | Nippon Tungsten | Material for alumina magnetic head |
| JPS5926967A (en) * | 1982-07-29 | 1984-02-13 | 松下電器産業株式会社 | Manufacture of ceramic for thin film substrate |
| JPS60231308A (en) * | 1984-05-01 | 1985-11-16 | Sumitomo Special Metals Co Ltd | Alumina magnetic head substrate material and manufacture thereof |
| JPS60260464A (en) * | 1984-06-01 | 1985-12-23 | ダイジヱツト工業株式会社 | Ceramic sintered body and manufacture |
| JPS61158862A (en) * | 1984-12-29 | 1986-07-18 | ティーディーケイ株式会社 | Magnetic head slider material |
| JPS632855A (en) * | 1986-06-20 | 1988-01-07 | ティーディーケイ株式会社 | Ceramic material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0373044B2 (en) | 1991-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4681813A (en) | Ceramic substrate for a thin layer magnetic head | |
| US4814915A (en) | Magnetic head slider and material therefor | |
| US4902651A (en) | Material for magnetic head substrate member | |
| JPS6390016A (en) | Substrate material for thin film magnetic head | |
| US5432016A (en) | Magnetic head slider material | |
| JPS6339115A (en) | Substrate material for thin film magnetic head | |
| JP2699104B2 (en) | A1 Lower 2 O Lower 3-TiC ceramic material | |
| JP2571070B2 (en) | Method of manufacturing substrate material for thin film magnetic head | |
| JP2640471B2 (en) | Substrate material for thin film magnetic head | |
| JPS6398816A (en) | Substrate for thin film magnetic head and its production | |
| JPH05246763A (en) | Ceramic sintered compact | |
| KR0137076B1 (en) | Non-magnetic ceramic substrate for magnetic head | |
| JPS63134559A (en) | Non-magnetic ceramics for magnetic head | |
| JPH0559067B2 (en) | ||
| JPH1079308A (en) | Hematite material for magnetic head and manufacture thereof | |
| JPH07315916A (en) | Substrate material for thin film head | |
| JPH0612611A (en) | Nonmagnetic ceramics for magnetic head | |
| JPH05217139A (en) | Nonmagnetic ceramic substance for magnetic head | |
| JPH0262511B2 (en) | ||
| JPS63170262A (en) | Manufacture of zr02-tic-sic base sintered body | |
| JPH0340925A (en) | Magnetic head slider material | |
| JPH07220238A (en) | Substrate material for magnetic head | |
| JPH03279259A (en) | Ceramic composition for magnetic head | |
| JPS63222317A (en) | Substrate material for thin film magnetic head | |
| JPH04269810A (en) | Nonmagnetic substrate for magnetic head |