JPH07315916A - Substrate material for thin film head - Google Patents

Substrate material for thin film head

Info

Publication number
JPH07315916A
JPH07315916A JP6136484A JP13648494A JPH07315916A JP H07315916 A JPH07315916 A JP H07315916A JP 6136484 A JP6136484 A JP 6136484A JP 13648494 A JP13648494 A JP 13648494A JP H07315916 A JPH07315916 A JP H07315916A
Authority
JP
Japan
Prior art keywords
thin film
substrate material
tic
magnetic head
film magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6136484A
Other languages
Japanese (ja)
Inventor
Kazuo Shimoyashiki
一夫 下屋敷
Heiki Hoshi
兵喜 星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP6136484A priority Critical patent/JPH07315916A/en
Publication of JPH07315916A publication Critical patent/JPH07315916A/en
Pending legal-status Critical Current

Links

Landscapes

  • Magnetic Heads (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE:To obtain a substrate material for a thin film magnetic head having a small grain size, excellent in machinability and excellent in lubricity with a medium in spite of high hardness and high strength. CONSTITUTION:Powdery starting material consisting of >=10wt.% TiC and the balance Al2O3 is sintered with plasma by electric discharge or powdery starting material contg. at least one among Cr2O3, TiO2, Y2O3 and MgO by <=5wt.% base consisting of >=10wt.% TiC and the balance Al2O3 is sintered with plasma by electric discharge. The resultant sintered compact is used as t.he objective substrate material for a thin film magnetic head.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はコンピューターの周辺装
置であるフロッピーディスク装置や、ハードディスク装
置等に組み込まれる磁気ヘッドの基板材料に関し、特に
薄膜磁気ヘッドの非磁性基板材料に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate material for a magnetic head incorporated in a floppy disk drive or a hard disk drive which is a peripheral device of a computer, and more particularly to a non-magnetic substrate material for a thin film magnetic head.

【0002】[0002]

【従来の技術】従来、この種の基板材料には、高強度
で、かつ良好な耐薬品性を有するAl23−TiCセラ
ミックスが用いられている。
2. Description of the Related Art Conventionally, Al 2 O 3 --TiC ceramics having high strength and good chemical resistance have been used as a substrate material of this type.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、この種
のAl23−TiCセラミックスは、高硬度のために
記録媒体の摩耗を引き起こすこと。焼結性が悪いため
に、基板材料として必要な緻密な物を得るためにはホッ
トプレスを使用した場合でも1700〜1800℃の高
温で、焼結工程に要する時間が6〜8時間であること。
機械加工性が悪いために、小型化の要求に対応できな
いこと等の欠点があった。本発明は、これらの欠点を除
去するためになされたもので、焼結性、機械加工性、媒
体との潤滑性に優れて摩耗の少ない薄膜磁気ヘッド用基
板を提供することにある。
However, this kind of Al 2 O 3 -TiC ceramics causes abrasion of the recording medium due to its high hardness. Since the sinterability is poor, the time required for the sintering step is 6 to 8 hours at a high temperature of 1700 to 1800 ° C. even when using a hot press in order to obtain a dense material required as a substrate material. .
Since it has poor machinability, it has a drawback in that it cannot meet the demand for miniaturization. The present invention has been made in order to eliminate these drawbacks, and an object of the present invention is to provide a substrate for a thin film magnetic head which is excellent in sinterability, machinability and lubricity with a medium and has little wear.

【0004】[0004]

【課題を解決するための手段】本発明は従来のAl23
−TiCセラミックスの欠点を除去したもので、1)A
23−TiCからなる焼結助剤を含まない原料粉末を
放電プラズマ焼結して得られた焼結体からなる薄膜磁気
ヘッド用基板材料、2)Al23−TiCからなる主成
分に対し、Cr23,TiO2,Y23,MgOの少な
くとも一種を添加した原料粉末を放電プラズマ焼結して
得られた焼結体からなる薄膜磁気ヘッド用基板材料であ
る。
The present invention is based on the conventional Al 2 O 3 composition.
-TiC ceramics without defects, 1) A
A substrate material for a thin film magnetic head made of a sintered body obtained by performing spark plasma sintering of a raw material powder made of l 2 O 3 —TiC and not containing a sintering aid, 2) a main material made of Al 2 O 3 —TiC It is a substrate material for a thin film magnetic head made of a sintered body obtained by spark plasma sintering a raw material powder in which at least one of Cr 2 O 3 , TiO 2 , Y 2 O 3 and MgO is added to its components.

【0005】本発明によれば、1)TiCを10wt%
以上含み、残部Al23よりなる薄膜磁気ヘッド用基板
材料、2)TiCを10wt%以上含み、残部Al23
よりなる主成分100重量部に対し、Cr23,TiO
2,Y23,MgOの少なくとも一種以上を5重量部以
下含むことを特徴とする薄膜磁気ヘッド基板材料が得ら
れる。
According to the present invention: 1) 10% by weight of TiC
Including the above, the substrate material for a thin film magnetic head consisting of the balance Al 2 O 3 , 2) Containing 10 wt% or more of TiC, the balance Al 2 O 3
100 parts by weight of the main component consisting of Cr 2 O 3 and TiO
A thin film magnetic head substrate material is obtained which contains 5 parts by weight or less of at least one of 2 , Y 2 O 3 and MgO.

【0006】本発明においてTiCの組成範囲を限定し
たのは、10wt%未満ではビッカース硬度が2000
以下となるためである。
In the present invention, the composition range of TiC is limited because the Vickers hardness is 2000 when the content is less than 10 wt%.
This is because

【0007】また、本発明においてCr23,Ti
2,Y23,MgOの添加量を5wt%以下と限定し
たのは、5wt%を越えると粒成長効果が著しくなり、
加工時にチッピングが生じるためである。
Further, in the present invention, Cr 2 O 3 , Ti
The reason why the addition amount of O 2 , Y 2 O 3 and MgO is limited to 5 wt% or less is that the grain growth effect becomes remarkable when it exceeds 5 wt%.
This is because chipping occurs during processing.

【0008】[0008]

【作用】本発明において、焼結は放電プラズマ焼結法に
よっている。放電プラズマ焼結とは、ホットプレスの一
種であるが、焼結原料粉末に油圧プレス装置等を使用し
て高圧力を加えつつ、高電圧のパルス電圧を印加するこ
とにより、原料粉末粒子間にプラズマ放電を生じさせ、
その発熱効果及び表面拡散効果・体積拡散効果を利用し
て、通常のホットプレスに比べ、低温・短時間で焼結が
完了する方法である。本焼結法により得られた基板材料
は、大量生産が可能であり、粒成長が押さえられて緻密
であり、加工性に優れている。
In the present invention, the sintering is performed by the spark plasma sintering method. Spark plasma sintering is a kind of hot pressing, but by applying a high voltage pulse voltage while applying high pressure to the sintering raw material powder using a hydraulic press device, etc., Create a plasma discharge,
By utilizing the heat generation effect and the surface diffusion effect / volume diffusion effect, it is a method in which sintering is completed at a low temperature in a short time as compared with ordinary hot pressing. The substrate material obtained by the present sintering method can be mass-produced, is suppressed in grain growth, is dense, and is excellent in workability.

【0009】[0009]

【実施例】以下、本発明を実施例に従って詳細に説明す
る。平均粒径を0.1〜0.3μm、純度99%以上のA
23,TiC,Cr23,TiO2,Y23,MgO
の各粉末原料を表1に示す組成比となるように秤量し、
No.1〜No.13の各試料とした。各試料を所定の組
成となるように秤量し、エタノールを溶媒とし、ボール
ミルにて20〜40時間混合した。これを濾過・乾燥
後、整粒し、原料粉末を作製した。なお、表中、組成を
示す欄のAは、主成分を示しており、Al23とTiC
をあわせて100重量部とした時のAl23とTiCの
wt%を示している。また、Bは、Aを100重量部と
した時のAに対する添加物Bのwt%を示している。
EXAMPLES The present invention will be described in detail below with reference to examples. A with an average particle size of 0.1 to 0.3 μm and a purity of 99% or more
l 2 O 3 , TiC, Cr 2 O 3 , TiO 2 , Y 2 O 3 , MgO
Each powder raw material of was weighed so that the composition ratio shown in Table 1 was obtained,
The samples No. 1 to No. 13 were used. Each sample was weighed so as to have a predetermined composition, and ethanol was used as a solvent and mixed in a ball mill for 20 to 40 hours. This was filtered, dried, and then sized to prepare a raw material powder. In the table, A in the column of composition indicates the main component, and Al 2 O 3 and TiC
The total weight of Al 2 O 3 and TiC is 100% by weight. In addition, B represents wt% of the additive B with respect to A when A is 100 parts by weight.

【0010】[0010]

【表1】 [Table 1]

【0011】次に、得られた粉末をグラファイトカーボ
ン製の型に充填し、1500℃の温度で5分間、500
kg/cm2の圧力で放電プラズマ焼結を行い、φ60
mm×6mmの円板状の試料を作製した。
Next, the obtained powder is filled in a mold made of graphite carbon, and the temperature is set to 1500 ° C. for 5 minutes to obtain 500.
Spark plasma sintering is performed at a pressure of kg / cm 2 and φ60
A disc-shaped sample having a size of mm × 6 mm was prepared.

【0012】以上の工程により得られた試料の材料特性
の評価として、アルキメデス法による相対密度、SEM
による結晶粒径、ビッカース硬度、三点曲げ法による抗
折強度(F)の測定を行った。
As the evaluation of the material properties of the sample obtained by the above steps, the relative density by the Archimedes method, SEM
The crystal grain size, Vickers hardness, and bending strength (F) by the three-point bending method were measured.

【0013】また、円板状の各試料より5×5×10m
mの角柱を切り出した後、これらの角柱を隣接する5×
10mmの2面を鏡面加工し、稜部に生じた2×2μm
以上のチッピング数をカウントして1cm当たりの発生
率に換算し、加工性の評価とした。
From each disk-shaped sample, 5 × 5 × 10 m
After cutting out m prisms, these prisms are adjacent to each other 5 ×
2 x 2 μm generated on the ridge by mirror-finishing 2 faces of 10 mm
The above chipping number was counted and converted into the occurrence rate per cm, and the workability was evaluated.

【0014】さらに、各試料より実用上のヘッド形状の
チップを切断加工し、これを金属系の媒体に一定圧力で
接触させ、3600rpmで一定時間摺動させた後、媒
体の重量減少量を測定し、摺動性の評価とした。なお、
評価はNo.13の通常のホットプレスにより1700
℃×2時間で焼結して得られたAl23−TiC材の値
を100として相対評価を行った。
Further, a practical head-shaped chip was cut from each sample, brought into contact with a metal-based medium at a constant pressure and slid at 3600 rpm for a certain period of time, and then the weight reduction amount of the medium was measured. Then, the slidability was evaluated. In addition,
Evaluation is 1700 by the normal hot press of No.13.
Relative evaluation was performed by setting the value of the Al 2 O 3 —TiC material obtained by sintering at ℃ × 2 hours as 100.

【0015】以上の結果を表2に纏めて示している。表
2の試料No.は表1の試料No.及び組成と対応してい
る。
The above results are summarized in Table 2. The sample No. in Table 2 corresponds to the sample No. and composition in Table 1.

【0016】[0016]

【表2】 [Table 2]

【0017】試料No.1〜10が本発明例であり、試
料No.11〜13が比較例である。特に試料No.13
は従来のホットプレスによって焼結した試料である。
Sample Nos. 1 to 10 are examples of the present invention, and sample Nos. 11 to 13 are comparative examples. Especially sample No.13
Is a sample sintered by conventional hot pressing.

【0018】試料No.1〜10の本発明例とNo.13
との比較からTiCを10wt%以上含み、残部Al2
3からなる試料は、従来のホットプレスによる試料
(No.13)より結晶粒径が小さく、摩耗テストの媒
体の摩耗量も小さい。さらに、従来のホットプレスより
200℃低い1500℃で放電プラズマ焼結しているに
もかかわらず、相対密度が99.6〜99.98%と高
く、ビッカース硬度も高く、チッピング発生率も改善し
ていることがわかる。
Samples No. 1 to 10 of the present invention and No. 13
From the comparison with, the content of TiC is 10 wt% or more, and the balance is Al 2
The sample made of O 3 has a smaller crystal grain size and a smaller amount of wear of the medium in the wear test than the sample (No. 13) obtained by the conventional hot pressing. Further, despite the fact that spark plasma sintering is performed at 1500 ° C., which is 200 ° C. lower than that of conventional hot pressing, the relative density is as high as 99.6 to 99.98%, the Vickers hardness is high, and the chipping occurrence rate is also improved. You can see that

【0019】また、本発明例中のNo.10とNo.13
とを比較すると、No.10は焼結助剤を含まないにも
関わらず、焼結助剤を含むNo.13とほぼ同等の密
度、ビッカース硬度、チッピング発生率を持っているこ
とがわかる。
No. 10 and No. 13 in the example of the present invention.
Comparing with No. 10, it can be seen that No. 10 has almost the same density, Vickers hardness, and chipping occurrence rate as No. 13 containing the sintering aid, although it does not contain the sintering aid.

【0020】本発明例と、TiCを5wt%含むNo.
11を比較すると、TiCの少ない場合はビッカース硬
度は小さく、抗折強度も小さいことがわかる。
The example of the present invention and No. containing 5 wt% of TiC.
Comparing No. 11 with each other, it can be seen that when TiC is small, Vickers hardness is small and bending strength is also small.

【0021】焼結助剤としてのCr23,TiO2,Y2
3,MgOの添加量が5wt%を越えているNo.12
は添加量が5wt%を越えると、結晶粒径が粗大化し、
チッピング発生率も多くなることを示している。
Cr 2 O 3 , TiO 2 , Y 2 as sintering aids
No. 12 in which the addition amount of O 3 and MgO exceeds 5 wt%
When the addition amount exceeds 5 wt%, the crystal grain size becomes coarse,
It also shows that the chipping occurrence rate increases.

【0022】以上、要約すると、1)TiCを10wt
%以上含み、残部Al23よりなる原料粉末を放電プラ
ズマ焼結することにより焼結助剤を添加しなくとも従来
と同等の薄膜磁気ヘッド用基板材料が得られること、
2)TiCを10wt%以上含み、残部Al23よりな
る主成分100重量部に対し、Cr23,TiO2,Y2
3,MgOの一種以上を5wt%以下添加した原料粉
末を放電プラズマ焼結することにより、高強度、高硬度
にもかかわらず、媒体との潤滑性に優れ、かつ、機械加
工性の良好な高密度薄膜磁気ヘッド用基板材料が得られ
ることがわかった。
In summary, 1) 10 wt% TiC
% Or more, and the remaining raw material powder consisting of Al 2 O 3 is subjected to spark plasma sintering to obtain a substrate material for a thin film magnetic head equivalent to the conventional one without adding a sintering aid,
2) Cr 2 O 3 , TiO 2 , Y 2 with respect to 100 parts by weight of the main component containing 10% by weight or more of TiC and the balance Al 2 O 3.
Despite high strength and high hardness, excellent lubricity with the medium and good machinability can be obtained by spark plasma sintering a raw material powder containing one or more of O 3 and MgO in an amount of 5 wt% or less. It was found that a substrate material for a high density thin film magnetic head can be obtained.

【0023】[0023]

【発明の効果】以上の結果から明らかなように、本発明
によれば、1)焼結助剤を含まないにも関わらず従来と
同等の薄膜磁気ヘッド用基板材料が得られる。2)小粒
径で機械加工性に優れ、高硬度、高強度にも関わらず、
媒体との潤滑性に優れた薄膜磁気ヘッド用基板材料が得
られる。
As is clear from the above results, according to the present invention, a substrate material for a thin film magnetic head equivalent to the conventional one can be obtained although 1) it does not contain a sintering aid. 2) Small particle size, excellent machinability, high hardness and high strength
A substrate material for a thin film magnetic head having excellent lubricity with a medium can be obtained.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 TiCを10wt%以上含み、残部Al
23よりなる原料粉末を放電プラズマ焼結して得られた
ことを特徴とする薄膜ヘッド用基板材料。
1. A TiC content of 10 wt% or more, with the balance being Al.
A substrate material for a thin film head, which is obtained by spark plasma sintering a raw material powder of 2 O 3 .
【請求項2】 TiCを10wt%以上含み、残部Al
23よりなる主成分100重量部に対し、Cr23,T
iO2,Y23,MgOの少なくとも1種を5重量部以
下含む原料粉末を放電プラズマ焼結して得られたもので
あることを特徴とする薄膜ヘッド用基板材料。
2. The content of TiC is 10 wt% or more, and the balance is Al.
Relative to 100 parts by weight of the main component consisting of 2 O 3, Cr 2 O 3 , T
A substrate material for a thin film head, which is obtained by spark plasma sintering a raw material powder containing at least 5 parts by weight of at least one of iO 2 , Y 2 O 3 and MgO.
JP6136484A 1994-05-25 1994-05-25 Substrate material for thin film head Pending JPH07315916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6136484A JPH07315916A (en) 1994-05-25 1994-05-25 Substrate material for thin film head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6136484A JPH07315916A (en) 1994-05-25 1994-05-25 Substrate material for thin film head

Publications (1)

Publication Number Publication Date
JPH07315916A true JPH07315916A (en) 1995-12-05

Family

ID=15176223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6136484A Pending JPH07315916A (en) 1994-05-25 1994-05-25 Substrate material for thin film head

Country Status (1)

Country Link
JP (1) JPH07315916A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100399426C (en) * 2005-06-27 2008-07-02 Tdk株式会社 Material for magnetic head slider, magnetic head slider, and method of producing material for magnetic head slider
JP2009026405A (en) * 2007-07-20 2009-02-05 Tdk Corp Material for magnetic head slider, magnetic head slider, hard disk device, and manufacturing method of material for magnetic head slider

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100399426C (en) * 2005-06-27 2008-07-02 Tdk株式会社 Material for magnetic head slider, magnetic head slider, and method of producing material for magnetic head slider
JP2009026405A (en) * 2007-07-20 2009-02-05 Tdk Corp Material for magnetic head slider, magnetic head slider, hard disk device, and manufacturing method of material for magnetic head slider

Similar Documents

Publication Publication Date Title
JP4100847B2 (en) Piezoelectric ceramic composition
JPH0622053B2 (en) Substrate material
JP3933523B2 (en) Ceramic substrate materials for thin film magnetic heads
US4902651A (en) Material for magnetic head substrate member
JPH07315916A (en) Substrate material for thin film head
JPS5983977A (en) High density manganese zinc ferrite
JP2005097657A (en) Sputtering target for forming magnetic layer having reduced production of particle
JP2513260B2 (en) Alumina-based ceramic thin film head substrate
JPH0373043B2 (en)
JP2571070B2 (en) Method of manufacturing substrate material for thin film magnetic head
JP2640471B2 (en) Substrate material for thin film magnetic head
JPS6140869A (en) Ceramic composition for magnetic head reinforcement
JPS5845163A (en) Oxide magnetic material
JPS63134559A (en) Non-magnetic ceramics for magnetic head
JPH07220238A (en) Substrate material for magnetic head
JPH0744111B2 (en) Substrate material for thin film magnetic head
KR0137076B1 (en) Non-magnetic ceramic substrate for magnetic head
JPS5945969A (en) High hardness high tenacity zirconium oxide ceramic and manufacture
JPH06290409A (en) Non-magnetic substrate material for magnetic head
JPH0612611A (en) Nonmagnetic ceramics for magnetic head
JPS6390016A (en) Substrate material for thin film magnetic head
JPS63134558A (en) Non-magnetic ceramics for magnetic head
JPS63170257A (en) Manufacture of al203-tic-sic base sintered body
JPS638257A (en) Ceramic material
JPH0670925B2 (en) Substrate material for thin film magnetic head