JPH0670925B2 - Substrate material for thin film magnetic head - Google Patents

Substrate material for thin film magnetic head

Info

Publication number
JPH0670925B2
JPH0670925B2 JP63152238A JP15223888A JPH0670925B2 JP H0670925 B2 JPH0670925 B2 JP H0670925B2 JP 63152238 A JP63152238 A JP 63152238A JP 15223888 A JP15223888 A JP 15223888A JP H0670925 B2 JPH0670925 B2 JP H0670925B2
Authority
JP
Japan
Prior art keywords
magnetic head
thin film
film magnetic
substrate material
tic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63152238A
Other languages
Japanese (ja)
Other versions
JPH01319914A (en
Inventor
尋志 萩屋
幸雄 長山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP63152238A priority Critical patent/JPH0670925B2/en
Publication of JPH01319914A publication Critical patent/JPH01319914A/en
Publication of JPH0670925B2 publication Critical patent/JPH0670925B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はコンピューターの周辺装置であるフロッピーデ
ィスク装置やムードディスク装置に組み込まれる磁気ヘ
ッドの基板材料に関し、特に薄膜磁気ヘッド用非磁性基
板に関するものである。
The present invention relates to a substrate material of a magnetic head incorporated in a floppy disk device or a mood disk device which is a peripheral device of a computer, and more particularly to a non-magnetic substrate for a thin film magnetic head. Is.

〔従来の技術〕[Conventional technology]

高密度記録用磁気ヘッドとして従来のフェライトを使用
したヘッドに変り、最近では薄膜磁気ヘッドが注目され
て来ている。
As a magnetic head for high-density recording, it has been replaced by a conventional head using ferrite, and a thin film magnetic head has recently been drawing attention.

ここで薄膜磁気ヘッド用基板材料としてはAl2O3-TiCセ
ラミックスが用いられている。その理由としては、他材
料に比較し高硬度かつ高強度なため高密度磁気記録用と
して使われる金属系の記録媒体との接触起動停止に対し
高い耐久性を示す事があげられる。
Here, Al 2 O 3 —TiC ceramics is used as the substrate material for the thin film magnetic head. The reason is that it has high hardness and strength compared to other materials, and therefore exhibits high durability against contact start / stop with a metal-based recording medium used for high-density magnetic recording.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかしながらAl2O3-TiCセラミックスよりなる薄膜磁気
ヘッドは、焼結性が悪いために、基板材料として必要
な緻密なものを得るためには焼結温度を1850〜1900℃の
高温としなければならないこと、機械加工性が悪いた
めに小型化の要求に対応できないこと等の欠点があげら
れる。
However, since the thin film magnetic head made of Al 2 O 3 -TiC ceramics has poor sinterability, the sintering temperature must be as high as 1850 to 1900 ° C to obtain the dense material required for the substrate material. However, there are drawbacks such as inability to meet the demand for miniaturization due to poor machinability.

本発明は斯る欠点を除去するため研究したもので、その
技術的課題は焼結性及び機械加工性に優れた薄膜磁気ヘ
ッド用基板材料を提供することにある。
The present invention has been studied to eliminate such drawbacks, and its technical problem is to provide a substrate material for a thin film magnetic head which is excellent in sinterability and machinability.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明は上述の欠点を改善する様構成したもので、薄膜
磁気ヘッド用基板材料において、主成分と,添加物とか
らなるセラミックスであって,前記主成分は15〜60wt%
のTiCと残部が実質的にAl2O3とからなり,前記添加物は
前記セラミックスの総重量に対して,総量で0.1〜1wt%
含有され,Ti,Zr,Nb,Ta,Cr,Mo,及びWの夫々の珪化物か
らなる群から選択された少なくとも一種の金属珪化物か
らなることを特徴とし,その焼結性、及び加工性を改良
したものである。
The present invention is configured to remedy the above-mentioned drawbacks, and in a substrate material for a thin film magnetic head, a ceramic material comprising a main component and an additive, wherein the main component is 15 to 60 wt%.
Of TiC and the balance of Al 2 O 3 and the additive is 0.1 to 1 wt% in total with respect to the total weight of the ceramic.
Contained at least one metal silicide selected from the group consisting of respective silicides of Ti, Zr, Nb, Ta, Cr, Mo and W, and its sinterability and workability Is an improvement of.

つまり本発明において金属珪化物の添加は焼結性を改善
し、特に0.1〜1.0wt%の添加量の時最大となる。このこ
とは、添加物は主成分の粒成長を抑えながら緻密化を進
行させるため、相対密度が高いにもかかわらず、得られ
た焼結性は機械加工性に優れたものとなる。このような
効果は添加量が0.1wt%未満では得られずまた1wt%を超
えると焼結時に粒界層における液層の生成が著しくなり
焼結性は向上するものの粒径は大きくなり、また同時に
粒界強度も低下しピッカース硬度Hv、抗折強度Fともに
劣化するためチッピング発生率も高くなる。また主成分
に関しては、TiCとAl2O3の合計に対するTiC量が15wt%
未満ではHvが2000kg/mm2以下となり、また60wt%を超え
ると焼結性が著しく低下するため主成分のTiC量は15〜6
0wt%が望ましい。
That is, in the present invention, the addition of the metal silicide improves the sinterability, and becomes maximum when the addition amount is 0.1 to 1.0 wt%. This means that the additive promotes densification while suppressing grain growth of the main component, so that the obtained sinterability is excellent in machinability despite the high relative density. Such an effect cannot be obtained when the amount added is less than 0.1 wt%, and when it exceeds 1 wt%, the formation of a liquid layer in the grain boundary layer becomes remarkable during sintering and the sinterability is improved, but the grain size becomes large. At the same time, the grain boundary strength decreases, and both the Pickers hardness Hv and the bending strength F deteriorate, so that the chipping occurrence rate also increases. Regarding the main component, the amount of TiC is 15 wt% with respect to the total of TiC and Al 2 O 3.
When the Hv is less than 2000 kg / mm 2 or less, and when it exceeds 60 wt%, the sinterability is remarkably reduced, so the TiC content of the main component is 15 to 6
0 wt% is desirable.

以下本発明は実施例に従い詳細に説明する。Hereinafter, the present invention will be described in detail according to examples.

〔実施例〕〔Example〕

平均粒径0.1〜0.5μm、純度99%以上のAl2O3,TiC,TiSi
2,ZrSi2,NbSi2,TaSi2,CrSi2,MoSi2,WSi2の各粉末
原料を第1表に示す組成比となる様に秤量しNo.1〜10の
各試料とした。表中の主成分TiC及びAl2O3は、主成分の
組成(wt%)を示し、添加物の量は、主成分及び添加物
の総量に対する重量比(wt%)で示している。
Al 2 O 3 , TiC, TiSi with an average particle size of 0.1-0.5 μm and a purity of 99% or more
2, ZrSi 2, NbSi 2, TaSi 2, CrSi 2, MoSi 2, and each sample of WSi powders raw material 2 were weighed so as to be the composition ratios shown in Table 1 No. 1 to No. 10. The main components TiC and Al 2 O 3 in the table indicate the composition of the main components (wt%), and the amounts of additives are indicated by the weight ratio (wt%) to the total amount of the main components and additives.

試料No.1〜5が本発明の適用例であり試料No.5〜10は比
較のためのものである。
Sample Nos. 1 to 5 are application examples of the present invention, and Sample Nos. 5 to 10 are for comparison.

No.1〜No.10の各試料をそれぞれの前述の様に秤量後エ
タノールを溶媒とし、ボールミルにて20〜40時間混合し
た。次に、過、乾燥後、有機系バインダーを添加し、
たて30mm×よこ30mm×高さ10mmのブロックに加圧成型し
た。次に1750℃の温度でこのブロックをAr気流中にて2
時間の焼結を行った。焼結後Arガスを圧力媒体として用
い圧力1000kg/cm2、温度1650℃、2時間保持の条件で熱
間等静圧圧縮成形(HIP)処理を行った。
Each sample of No. 1 to No. 10 was weighed as described above and mixed with ethanol as a solvent in a ball mill for 20 to 40 hours. Next, after drying, add an organic binder,
It was pressure-molded into a block of vertical 30 mm × horizontal 30 mm × height 10 mm. Next, at a temperature of 1750 ° C, this block is placed in an Ar stream for 2
Sintered for hours. After sintering, hot isostatic pressing (HIP) treatment was performed under the conditions of a pressure of 1000 kg / cm 2 and a temperature of 1650 ° C. for 2 hours using Ar gas as a pressure medium.

以上の工程より得られた試料の材料特性の評価として相
対密度、ビッカース硬度Hv、抗折強度F、の測定を行っ
た。また各試料よりたて5mm×よこ5mm×20mmの角柱を切
り出した後、この角柱の隣接する5mm×20mmの2面を鏡
面加工し陵部に生じた2×2μm以上のチッピング数を
1000倍の倍率を有する光学顕微鏡を用いてカウントして
1cm当りの発生率に換算し加工性の評価とした。さらに
組織観察を行い平均粒径を求めた。
The relative density, Vickers hardness Hv, and flexural strength F were measured to evaluate the material properties of the sample obtained through the above steps. Also, after cutting a 5 mm × 5 mm × 20 mm prism from each sample, two adjacent 5 mm × 20 mm faces of this prism are mirror-polished to obtain a chipping number of 2 × 2 μm or more generated in the ridge.
Count using an optical microscope with 1000x magnification
The workability was evaluated by converting into the occurrence rate per cm. Further, the structure was observed to determine the average particle size.

以上の結果を第1表に組成の値とともに記載した。The above results are shown in Table 1 together with the composition values.

この表から、試料No.6の無添加例に比較し、TiSi2,ZrS
i2,NbSi2,TaSi2,CrSi2,MoSi2,WSi2,の少なくとも
一種以上を0.1〜1wt%添加した時平均粒径1.2〜1.1μm
の小粒径組織であるにもかかわらず相対密度99.96〜99.
98%と高密度で、かつHv,F,チッピングの発生率ともに
向上している。
From this table, in comparison with the additive-free example of sample No. 6, TiSi 2 , ZrS
i 2 , NbSi 2 , TaSi 2 , CrSi 2 , MoSi 2 , WSi 2 , 0.1 to 1 wt% of 0.1 to 1 wt% added average particle size 1.2 to 1.1 μm
Relative density of 99.96-99 despite the small grain size of the tissue.
It has a high density of 98%, and the occurrence rates of Hv, F and chipping are improved.

しかし添加量が0.1wt%未満の時(試料No.7,8)焼結性
の改善は見られず相対密度は90%程度しか得られず、機
械強度も低くこのためチッピング発生率も高い。
However, when the addition amount is less than 0.1 wt% (Sample No.7,8), no improvement in sinterability is observed, the relative density is only about 90%, the mechanical strength is low, and therefore the chipping occurrence rate is high.

これに対し、添加量が1wt%を超えると焼結性は向上し
ているものの粒成長が顕著になり、かつHv,Fの低下チッ
ピング発生率の増加が観察された。
On the other hand, when the addition amount exceeds 1 wt%, the grain growth becomes remarkable but the decrease in Hv and F and the occurrence of chipping are observed to increase, although the sinterability is improved.

〔発明の効果〕 以上述べた如く本発明によれば、小粒径組織かつ緻密で
かつ機械加工性に優れた薄膜磁気ヘッド用高密度Al2O3-
TiCセラミックス基板材料の提供が可能となった。
[Effects of the Invention] As described above, according to the present invention, a high-density Al 2 O 3- for a thin-film magnetic head, which has a small grain size structure, is dense, and has excellent machinability
It is now possible to provide TiC ceramics substrate materials.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】主成分と,添加物とからなるセラミックス
であって, 前記主成分は15〜60wt%のTiCと残部が実質的にAl2O3
からなり, 前記添加物は前記セラミックスの総重量に対して,総量
で0.1〜1wt%含有され,Ti,Zr,Nb,Ta,Cr,Mo,及びWの夫
々の珪化物からなる群から選択された少なくとも一種の
金属珪化物からなることを特徴とする薄膜磁気ヘッド用
基板材料。
1. A ceramic comprising a main component and an additive, wherein the main component comprises 15 to 60 wt% TiC and the balance substantially Al 2 O 3, and the additive is the ceramic Containing 0.1 to 1 wt% of the total weight, and consisting of at least one metal silicide selected from the group consisting of Ti, Zr, Nb, Ta, Cr, Mo, and W silicides. A substrate material for a thin film magnetic head characterized by:
JP63152238A 1988-06-22 1988-06-22 Substrate material for thin film magnetic head Expired - Fee Related JPH0670925B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63152238A JPH0670925B2 (en) 1988-06-22 1988-06-22 Substrate material for thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63152238A JPH0670925B2 (en) 1988-06-22 1988-06-22 Substrate material for thin film magnetic head

Publications (2)

Publication Number Publication Date
JPH01319914A JPH01319914A (en) 1989-12-26
JPH0670925B2 true JPH0670925B2 (en) 1994-09-07

Family

ID=15536108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63152238A Expired - Fee Related JPH0670925B2 (en) 1988-06-22 1988-06-22 Substrate material for thin film magnetic head

Country Status (1)

Country Link
JP (1) JPH0670925B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066408A (en) * 1983-09-21 1985-04-16 Hitachi Metals Ltd Ceramics substrate for thin film magnetic head

Also Published As

Publication number Publication date
JPH01319914A (en) 1989-12-26

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