JPS6381904A - Manufacture of resistance circuit board - Google Patents
Manufacture of resistance circuit boardInfo
- Publication number
- JPS6381904A JPS6381904A JP22757986A JP22757986A JPS6381904A JP S6381904 A JPS6381904 A JP S6381904A JP 22757986 A JP22757986 A JP 22757986A JP 22757986 A JP22757986 A JP 22757986A JP S6381904 A JPS6381904 A JP S6381904A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- heat treatment
- circuit board
- manufacture
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910018104 Ni-P Inorganic materials 0.000 claims description 2
- 229910018536 Ni—P Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 16
- 238000007747 plating Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野ン
未発＃４は無電解めっき法によりセラミック基板上に抵
抗回路を形成する抵抗回路ｆｇ板の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field #4 relates to a method for manufacturing a resistor circuit FG board in which a resistor circuit is formed on a ceramic substrate by electroless plating.
（従来の技術）
セラミック基板上に無′ＩＩ！解めっき法により形成さ
れる抵抗めっき皮膜は、抵抗特性を向上させる目的で歯
−ｐｌ）６るいはＮｉ−８２）を晶本としてこれにｚｎ
苧）Ｆｅ’、） ｗ５）ｃ６．） ｃＪ、） ｃｉ）
Ｒｅ？）Ａｌ＊０ｓ１０）などを共析させたものが次の
文献、特許などにみらｎる。(Prior art) No 'II on ceramic substrate! The resistance plating film formed by the deplating method is coated with Zn-PL6 or Ni-82) as a crystal base for the purpose of improving the resistance characteristics.
苧)Fe',) w5)c6. ) cJ,) ci)
Re? ) Al*0s10) etc. are eutectoids found in the following documents and patents.
１） ＩＥＥＥ、ＣＨＭＴ−４，５３２Ｌ１９８１）
２）特公昭５５−１６５１９号公報
３） ４Ｉ開昭５４−５３６２９号公報４）特開昭５
４−１４２５６２号公報
５）金属表面技術、１２，６６１（１９８０）６）電子
通信学会論文誌、Ｊ６１−Ｃ，５１７７）金属表面技術
、３４，２７８（１９８３）８）特開昭４８−１３３１
６号公報
９）４！開昭５９−１２３７５９号公報１０）金属表面
技術、正５，１５５（１９８４）こｎらの皮Ｉ’ｌｌを
通常の無電解めっきの工程に従りて絶縁基鈑上に形成し
た後、抵抗体として使用時の発熱による抵抗値の変化を
防ぐために熱処理を行うのが普通である。1) IEEE, CHMT-4,532L1981)
2) Japanese Patent Publication No. 55-16519 3) 4I Publication No. 54-53629 4) Japanese Patent Publication No. 54-53629
Publication No. 4-142562 5) Metal surface technology, 12,661 (1980) 6) Transactions of the Institute of Electronics and Communication Engineers, J61-C, 5177) Metal surface technology, 34,278 (1983) 8) Japanese Patent Application Laid-Open No. 1977-1331
Publication No. 6 9) 4! Publication No. 123759/1989 10) Metal Surface Technology, 5, 155 (1984) After forming these skins on an insulating substrate according to the usual electroless plating process, resistors Heat treatment is usually performed to prevent changes in resistance due to heat generation during use as a body.
熱処理としては、一般に１５０〜２００℃、１〜数時間
が採用さｎている。The heat treatment is generally performed at 150 to 200°C for one to several hours.
（発明が解決しようとする問題点）
従来の熱処理でに各種抵抗特性試験において抵抗変化が
大きぐ抵抗値を安定化できていない。(Problems to be Solved by the Invention) With conventional heat treatment, resistance changes are large in various resistance characteristic tests, and the resistance value cannot be stabilized.
ｆた、めっき時のシート抵抗がＣＬ１Ω／口〜２０にΩ
／口の皮膜に対して従来の熱処理全行うと一２０％〜−
ＳＯ％の抵抗変化を起こし、抵抗値を減少させてしまう
。f, sheet resistance during plating is CL1Ω/mouth ~ 20Ω
/ If conventional heat treatment is applied to the membrane of the mouth, the reduction will be -20%~-
This causes a resistance change of SO% and reduces the resistance value.
このように従来法では熱に対して不安定、局抵抗が得ら
ｎないという問題がろっだ。As described above, the problem with the conventional method is that it is unstable with respect to heat and local resistance cannot be obtained.
本発明は熱に対して安だで、高抵抗を可能とする抵抗（
ロ）路Ｍ８！の製造法を提供するものである。The present invention provides a resistor (
b) Road M8! The present invention provides a method for manufacturing.
（問題点を解決するための手段）
本発明はセラミックＡ板に形成さｎた無′０ＬｐＩ４Ｎ
ｉ−Ｐ皮膜を、空気中、あるいは窒素などの非酸化雰囲
気中で５５０℃以上の温度で熱処理することにより熱に
対する抵抗変化が安定化することを見い出したことに工
りなさｎたものである。(Means for Solving the Problems) The present invention provides a ceramic A plate with no LpI4N.
The invention was based on the discovery that heat treatment of the i-P film at a temperature of 550°C or higher in air or a non-oxidizing atmosphere such as nitrogen stabilizes the change in resistance against heat. .
６５０℃以上の熱処理に工って抵抗変化か飽和し、抵抗
値が安定になる。Heat treatment at 650°C or higher causes the resistance change to saturate, and the resistance value becomes stable.
また、３５０℃の処理を空気中で行った場合、めりき時
の抵抗が１０００／口以上の皮膜であｎば、熱処理を行
うことによって、めっき時よりも抵抗値全増加させるこ
とができる。Further, when the treatment at 350° C. is carried out in air, if the resistance at the time of plating is 1000/or more, the resistance value can be completely increased by performing the heat treatment compared to that at the time of plating.
３５０℃以上の熱処理ｍ度では結晶化の進行が目豆ち５
５０℃以上で熱処理を行えは、ニッケルの結晶化の進行
により、抵抗値の変化が飽和するためセラミック配線機
分野における抵抗体の特性試験における長期熱安定件が
確保できろ。When heat treated at temperatures above 350°C, crystallization progresses rapidly.5
If the heat treatment is performed at 50°C or higher, the change in resistance value will be saturated due to the progress of crystallization of nickel, so long-term thermal stability conditions can be ensured in characteristic tests of resistors in the field of ceramic wiring machines.
また、上記の処理を空気中で行えはニッケルとの結晶化
と同時に酸化が進行するため抵抗値を増加させることが
できる。Furthermore, if the above treatment is performed in air, oxidation proceeds simultaneously with crystallization with nickel, so that the resistance value can be increased.
実施例
脱脂、感受性化、活性化の缶処理を施したセラミック基
也を、無電解Ｎｉ−Ｐめりき液中に浸漬することに↓っ
て、めっき皮膜を形成する。EXAMPLE A plating film is formed by immersing a ceramic substrate that has been subjected to degreasing, sensitization, and activation in an electroless Ni--P plating solution.
無電解ニッケルめっき液の組成は次の辿りである。The composition of the electroless nickel plating solution is as follows.
環化ニッケル ３０ ｇ／１
次亜リン酸ナトリウム１０ｇ／／
酢酸ナトリウム １０ｇ／Ｊ
１） ５ （ＨＣＩ″″Ｃ調整）浴温
４０，６０，８０℃以上の条件で形成しため
つき皮膜を窒素中１時間熱処理した。こｎに対して各種
抵抗特性試験２行った。この結果を表１に示す。Cyclized nickel 30 g/1 Sodium hypophosphite 10 g// Sodium acetate 10 g/J 1) 5 (HCI″″C adjustment) Bath temperature
The matted films formed at temperatures of 40, 60, and 80° C. or higher were heat-treated in nitrogen for 1 hour. Two various resistance characteristic tests were conducted on this product. The results are shown in Table 1.
表１かられかるように３５０℃以上の熱処理を行ったも
のは抵抗変化率が１．０％以内と非常に小さい。As can be seen from Table 1, those subjected to heat treatment at 350° C. or higher have a very small resistance change rate of 1.0% or less.
次に５５０℃、１時間の熱処理ヲ９気中で行った場合と
璧累中で行った場合の抵抗変化″４を表２に示す。Next, Table 2 shows the resistance change "4" when the heat treatment was carried out at 550° C. for 1 hour in the atmosphere and in the case where the heat treatment was carried out in the heat treatment.
表２ 熱処理前後の抵抗変化率
］゛
□
□
空気中で行った場合、熱処理時のシート抵抗値にめっき
時の３００倍以上に増加した。Table 2 Resistance change rate before and after heat treatment] ゛□ □ When carried out in air, the sheet resistance value during heat treatment increased by more than 300 times that during plating.
比較例
空気中、１６０℃、 ２ｈｒの熱処理を行ったＮｉ−Ｐ
皮膜（実施例と同様にして形成うに対して、耐熱試験（
空気中、２００℃、１ｈｒ、）、はんだ耐熱試験（２３
０℃、ＳＳ）、ｉ％ｍ放置試験（空気中、１５０℃、１
０００ｈｒ ） ｔ’行ったときの試験結果を表３に示
す。Comparative example: Ni-P heat treated in air at 160°C for 2 hours.
The film (formed in the same manner as in the example) was subjected to a heat resistance test (
In air, 200℃, 1hr), soldering heat resistance test (23
0℃, SS), i%m storage test (in air, 150℃, 1
Table 3 shows the test results when the test was carried out at 000 hr) t'.
以下余白
このように従来の熱処理条件ではこれらの試験によって
−α８％〜−２９％もの抵抗変化金生じ、抵抗値を安定
化できていない。Margin below As described above, under conventional heat treatment conditions, these tests resulted in a resistance change of -α8% to -29%, making it impossible to stabilize the resistance value.
またぬっき時のシート抵抗が［Ｌ１Ω／口へ２０にΩ／
口の皮膜に対して上記の熱処理を行うと、−２０％へ一
五〇％の抵抗変化を起こし、抵抗値をむしろＩ」・さく
してしまう。Also, the sheet resistance when plating is [L1Ω/to 20Ω/
When the above-mentioned heat treatment is applied to the membrane of the mouth, the resistance changes by 150% from -20%, and the resistance value decreases by I''.
（発明の効果ン
本発明によｎば、Ｐ３＃基板上に＠装態電解めっき法で
形成した抵抗皮膜の抵抗値を１００倍以上筐で増加させ
、かつ抵抗特性試験に対し″〔゛（，７〕(Effects of the Invention) According to the present invention, the resistance value of the resistive film formed on the P3# board by the @-type electrolytic plating method can be increased by more than 100 times, and the resistance characteristic test ,7]
Claims (1)
膜を形成し形成した抵抗体に対して、空気中、あるいは
窒素などの非酸化雰囲気中で、３５０℃以上の温度で熱
処理を行うことを特徴とする抵抗回路基板の製造法。1. It is characterized by forming an electroless Ni-P film as a resistor on a ceramic substrate and heat-treating the formed resistor at a temperature of 350°C or higher in air or in a non-oxidizing atmosphere such as nitrogen. A method for manufacturing a resistor circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22757986A JPS6381904A (en) | 1986-09-26 | 1986-09-26 | Manufacture of resistance circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22757986A JPS6381904A (en) | 1986-09-26 | 1986-09-26 | Manufacture of resistance circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6381904A true JPS6381904A (en) | 1988-04-12 |
Family
ID=16863128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22757986A Pending JPS6381904A (en) | 1986-09-26 | 1986-09-26 | Manufacture of resistance circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381904A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305411A (en) * | 1989-05-19 | 1990-12-19 | Matsushita Electric Ind Co Ltd | Manufacture of metal film fixed resistor |
| JP2006120942A (en) * | 2004-10-22 | 2006-05-11 | Toppan Printing Co Ltd | Resistance element and manufacturing method therefor |
-
1986
- 1986-09-26 JP JP22757986A patent/JPS6381904A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305411A (en) * | 1989-05-19 | 1990-12-19 | Matsushita Electric Ind Co Ltd | Manufacture of metal film fixed resistor |
| JP2006120942A (en) * | 2004-10-22 | 2006-05-11 | Toppan Printing Co Ltd | Resistance element and manufacturing method therefor |
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