JPS6381455A - Photosensitive body - Google Patents

Abstract

PURPOSE:To provide adequate transferability and excellent photoconductivity to the tilted photosensitive body by using a hydrogenated amorphous carbon film contg. oxygen atoms to form the charge transfer layer and using a hydrogenated or fluorinated amorphous and either of film into which oxygen atoms are incorporated and either of phosphorus atoms or boron atoms are incorporated to form the charge generating layer. CONSTITUTION:This function sepn. type photosensitive body having the charge generating layer 3 and the charge transfer layer 2 is provided with the hydrogenated amorphous carbon film which is formed by glow discharge and into which the oxygen atoms are incorporated as the charge transfer layer 2 and the hydrogenated or fluorinated amorphous silicon film which is likewise formed by the glow discharge and into which at least either of the phosphorus atoms or boron atoms are incorporated and the oxygen atoms are incorporated as the charge generating layer 3. High dark resistance and excellent electric charge transferability are thereby provided to the charge transfer layer 2 so that said layer can make contribution to bright attenuation. The carriers generated in the formed film are efficiently implanted into the charge generating layer 3 in the lamination constitution with the charge transfer layer 2 so that said layer can make adequate contribution to the bright attenuation.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a photoreceptor having a charge generation layer and a charge transport layer.

BACKGROUND OF THE INVENTION Since the invention of the Carlson method, the application field of electrophotography has continued to make remarkable progress, and various materials have been developed and put into practical use for electrophotographic photoreceptors.

The main electrophotographic photoreceptor materials conventionally used include inorganic substances such as amorphous selenium, selenium arsenide, selenium telluride, cadmium sulfide, zinc oxide, amorphous silicon, polyvinyl carbazole, metal phthalocyanine,
Examples include organic substances such as disazo pigments, trisazo pigments, perylene pigments, triphenylmethane compounds, triphenylamine compounds, hydrazone compounds, styryl compounds, pyrazoline compounds, oxazole compounds, and oxadiazole compounds. In addition, the configurations include a single-layer structure in which these substances are used alone, a binder-type structure in which they are dispersed in a binding material, and a laminated structure in which a charge generation layer and a charge transport layer are provided for each function. Can be mentioned.

However, the electrophotographic photoreceptor materials conventionally used each have drawbacks. One of these is their toxicity to the human body, and all inorganic substances, except for the amorphous silicon mentioned above, have unfavorable properties. In addition, in order for an electrophotographic photoreceptor to be actually used in a copying machine, it must always maintain stable performance even when exposed to harsh environmental conditions such as charging, exposure, development, transfer, neutralization, and cleaning. However, all of the organic substances mentioned above have poor durability and many unstable factors in terms of performance.

In order to overcome these drawbacks, in recent years, amorphous silicon, which can be produced by a glow discharge method, has been increasingly applied to electrophotographic photoreceptors as a material with improved toxicity and increased durability. However, while amorphous silicon requires a large amount of silane gas as a raw material, it is an expensive gas, so the resulting electrophotographic photoreceptor is also significantly more expensive than a conventional photoreceptor. In addition, there are many inconveniences in production, such as the slow film-forming rate and the generation of undecomposed silane products in the form of dust as the film-forming time increases. Furthermore, if this dust gets mixed into the photosensitive layer during manufacturing, it will have a significant negative effect on image quality. Generally speaking, amorphous silicon originally has a high specific charge rate, so its charging performance is low, and in order to charge it to a predetermined surface potential in a copying machine, it is necessary to increase the thickness of the film, making it difficult to use an expensive amorphous silicon film. It must be allowed to accumulate for a long time.

By the way, the amorphous carbon film itself has been known for a long time as a plasma organic polymerized film, for example, diene (M
, 5hen) and Bell (A, T.

Journal of Applied Polymer Science (Journa Be1l), published in 1973.
l of Applied P.

lymer 5science), Volume 17, pages 885 to 892, the same author also reported in the 1979 American Chemical Society that all organic compounds can be prepared from gases.
Plasma Pol
ymerization), its film formability has been discussed.

However, plasma organic polymer films prepared by conventional methods are used only for applications that assume insulating properties, that is, they can be considered as insulating films with a resistivity of about <10" Ωcm, like ordinary polyethylene films. or, at least, it was used with the understanding that it was such a membrane.

Due to the same recognition, its actual use in electrophotographic photoreceptors has been limited to protective layers, adhesive layers, blocking layers, or insulating layers, and has only been used as so-called undercoat layers or overcoat layers.

For example, JP-A-59-28161 discloses a photoreceptor in which a plasma-polymerized polymer layer having a mesh structure is provided on a substrate as a blocking layer and an adhesive layer, and an amorphous silicon layer is provided thereon. ing. Japanese Patent Application Publication No. 5
Publication No. 9-38753 discloses that 10 to 100 high-resistance plasma polymerized films of 1013 to 101590 m, which can be generated from a mixed gas of oxygen, nitrogen, and hydrocarbons, are formed on a substrate as a blocking layer and an adhesive layer, and then an amorphous film is formed. A photoreceptor provided with a silicon layer is disclosed. Unexamined Japanese Patent Publication 1987-
Publication No. 136742 discloses a photoreceptor in which a carbon film of approximately 1 to 5 μm is formed on the surface of the substrate as a protective layer to prevent aluminum atoms from diffusing into the amorphous silicon layer provided on the aluminum substrate during light irradiation. has been fully disclosed.

Japanese Unexamined Patent Publication No. 60-63541 discloses a photosensitive material in which a diamond-like carbon film with a thickness of 200 to 2 μm is provided in the middle as an adhesive layer in order to improve the adhesion between an aluminum substrate and an amorphous silicon layer provided thereon. It is said that the film thickness is preferably 2 μm or less in terms of residual charge.

All of these disclosures are inventions in which a so-called undercoat layer is provided between the substrate and the amorphous silicon layer,
There is no disclosure regarding charge transport properties, and a-Si
However, it does not solve the above-mentioned essential problems.

For example, Japanese Patent Application Laid-Open No. 50-20728 discloses that a polymer film of 0.1 to 1 μm formed by glow discharge polymerization is applied as a protective layer on the surface of a polyvinylcarbazole-selenium photoreceptor.
A photoreceptor is disclosed. Japanese Patent Publication No. 59-214
Japanese Patent No. 859 discloses a technique for forming a protective layer on the surface of an amorphous silicon photoreceptor by plasma polymerizing an organic hydrocarbon monomer such as styrene or acetylene to form a film of about 5 μm. JP-A No. 60-61761 discloses a photoreceptor provided with a diamond-like carbon thin film of 500 to 2 μm as a surface protective layer, and it is said that the film thickness is preferably 2 μm or less in terms of light transmission. ing.

JP-A-60-249115 discloses that 0.05 to 5μ
A technique has been disclosed in which an amorphous carbon or hard carbon film with a thickness of about 5 μm is used as a surface protective layer, and it is said that if the film thickness exceeds 5 μm, the photoreceptor activity will be adversely affected.

All of these disclosures are inventions in which a so-called overcoat layer is provided on the surface of a photoreceptor, and there is no disclosure about charge transport properties, and they do not solve the above-mentioned essential problems of a-Si. .

Furthermore, JP-A-51-46130 discloses an electrophotographic photosensitive plate in which a polymer film of 0.001 to 3 μm is formed on the surface of a polyvinylcarbazole electrophotographic photoreceptor by glow discharge polymerization. However, there is no mention of charge transport properties, and it does not solve the above-mentioned essential problems of a-St.

On the other hand, regarding the amorphous silicon film, Spear (W
, E, 5pear) and Recompa (P.

Q.1. Philosophical Magazine published in 1976 by
Magazine) Volume 33, pages 935 to 9
Since it was reported on page 49 that it is a material whose polarity can be controlled, attempts have been made to apply it to various photoelectric devices. Regarding the application to photoreceptors, for example,
-62254, JP 57-119356, JP 57-177147, JP 57-11
9357, JP 57-177149, JP 57-119357, JP 57-1771
46, JP 57-177148, JP 57-174448, JP 57-174449
Amorphous silicon photoreceptors containing carbon atoms have been disclosed in Japanese Patent Application Publication No. 57-174450, etc., but all of them are aimed at adjusting the photoconductivity of amorphous silicon with carbon atoms. Furthermore, amorphous silicon itself requires a thick film.

Problems that the invention aims to solve As mentioned above, the plasma organic polymer films used in electrophotographic photoreceptors have traditionally been used as so-called undercoat layers or overcoat layers, but they are limited to carrier transport. It is a film that does not require any function, and is used based on the judgment that the organic polymer film is insulating. Therefore, it can only be used as an extremely thin film with a thickness of about 5 μm at most, and carriers either pass through the film by tunneling effect, or if a tunneling effect cannot be expected, there is virtually no problem with the generation of residual potential. It is only used in thin films that are only small enough to last. Furthermore, amorphous silicon films conventionally used in electrophotography are so-called thick films, which have many disadvantages in terms of cost, productivity, and the like.

While considering the application of amorphous carbon films to electrophotographic photoreceptors, the present inventors found that hydrogenated amorphous carbon films, which were originally thought to be insulating, were made to contain oxygen atoms, resulting in phosphorus. When laminated with a hydrogenated or fluorinated amorphous silicon film containing at least one of boron atoms and oxygen atoms, it has charge transport properties and easily begins to exhibit suitable electrophotographic properties. I found out something. There are many points in the theoretical interpretation that are unclear even for the present inventors, so we cannot discuss them in detail, but the electrons in a relatively unstable energy state that are captured in the hydrogenated amorphous carbon film containing oxygen atoms,
For example, a hydrogenated or fluorinated amorphous silicon film is formed in which a band structure formed by π electrons, unpaired electrons, residual free radicals, etc. contains at least one of phosphorus atoms and boron atoms as well as oxygen atoms. In a hydrogenated or fluorinated amorphous silicon film containing at least one of phosphorus atoms and boron atoms and also containing oxygen atoms, The carriers generated in this process are easily injected into the hydrogenated amorphous carbon film containing oxygen atoms. It is presumed that this is because the vehicle can run smoothly.

By utilizing this new knowledge, the present invention solves all of the above-mentioned essential problems of amorphous silicon photoreceptors, and also produces an organic plasma polymerized film, which has completely different purposes and characteristics from conventional ones, especially at least Hydrogenated or fluorinated amorphous silicon using a hydrogenated amorphous carbon film containing oxygen atoms as a charge transport layer, and containing at least one of phosphorus atoms and boron atoms as well as oxygen atoms. An object of the present invention is to provide a photoreceptor using a thin film of the present invention as a charge generation layer.

The present invention provides a functionally separated photoreceptor having a charge generation layer and a charge transport layer, in which at least the charge transport layer is generated from a plasma polymerization reaction. A hydrogenated amorphous carbon film containing oxygen atoms, and hydrogenated or fluorinated amorphous silicon in which the charge generation layer contains at least one of phosphorus atoms and boron atoms and also contains oxygen atoms. The present invention relates to a photoreceptor characterized in that it is a film (hereinafter, the charge transport layer according to the present invention will be referred to as an a-C film and the charge generation layer will be referred to as an a-3i film).

In conventional amorphous silicon photoreceptors, amorphous silicon, which has excellent functions as a charge generation layer, is also used as a charge transport layer, which can be used as a charge transport layer even if it does not have charge generation ability. This was done to solve these problems that had arisen.

That is, the present invention provides a hydrogenated amorphous carbon film containing at least oxygen atoms generated by glow discharge as a charge transport layer, and a hydrogenated amorphous carbon film containing at least oxygen atoms generated by glow discharge as a charge generation layer. The present invention relates to a functionally separated photoreceptor characterized by being provided with a hydrogenated or fluorinated amorphous silicon film containing at least one of the above and oxygen atoms. Although the charge transport layer does not have clear photoconductivity for visible light or light with a wavelength near semiconductor laser light, it has suitable transport properties, and has good charging ability, durability, and weather resistance. It has excellent electrophotographic photoreceptor performance such as durability and environmental pollution resistance, and is also excellent in light transmission, so it provides an extremely high degree of freedom when forming a laminated structure as a function-separated photoreceptor. . In addition, the charge generation layer has excellent photoconductivity for visible light or light with a wavelength near semiconductor laser light, and has an extremely thin film thickness compared to conventional amorphous silicon photoreceptors. It is something that can be put to good use.

In the present invention, an organic compound gas, particularly a hydrocarbon gas, is used to form the a-C film.

The phase state of the hydrocarbon does not necessarily have to be a gas phase at room temperature and normal pressure; it can be used in either a liquid phase or a solid phase as long as it can be vaporized through melting, evaporation, sublimation, etc. by heating or reduced pressure. It is.

There are many types of hydrocarbons that can be used, but examples of saturated hydrocarbons include methane, ethane, propane, butane,
Pentane, hexane, heptane, octane, nonane, tecane, untecane, toticane, tritecane, tetracosane, bentatecane, hexacosane, hebutatecane, octacosane, nonadecane, eicosane, heneicosane, tocosane, tricosane, tetracosane, pentacosane, hexacosane, heptacosane, octacosane, nonacosane, triacontane, todoriaconcun,
Normal paraffins such as pentatriacontane, isobutane, isopentane, neopentane, isohexane, neohexane, 2,3-dimethylbutane, 2-methylhexane, 3-ethylpentane, 2.2-dimethylpentane, 2,4-dimethyl Benkune, 3,3-dimethylbenkune, tributane, 2-methylhebutane, 3-methylhebutane, 2.2-dimethylhexane, 2.2.5
-dimethylhexane, 2.2.3-trimethylpentane, 2. ．． 2.4-, trimethylpentane, 2,3゜3-
Isoparaffins such as trimethylpentane, 2,3,4-trimethylpentane, isonanone, etc. are used.

Examples of unsaturated hydrocarbons include ethylene, propylene, isobutylene, 1-butene, 2-butene, 1-pentene, 2-pentene, 2-methyl-1-butene, 3-methyl-1-butene, 2-methyl -Olefins such as 2-butene, 1-hexene, tetramethylethylene, 1-heptene, 1-octene, 1-nonene, 1-decene, and allene, methylalene, butadiene, pentadiene, hexadiene, cyclopentadiene, Diolefins such as ocimene, allocimene, myrcene, hexatriene, etc., as well as acetylene, butadiyne, 1°3-pentadiyne, 2,4-hexadiyne, methylacetylene, 1-butyne, 2-butyne. ,
1-pentyne, 1-hexyne, 1-heptyne, 1-octyne, 1-nonine, 1-decyne, etc. are used.

Examples of alicyclic hydrocarbons include cyclopropane, cyclobutane, cyclopentane, cyclohexane, cyclohebutane, cyclooctane, cyclononane, cyclodecane, cycloundecane, cyclododecane, cyclotridecane, cyclotetradecane, cyclopentadecane, cyclohexadecane, cycloparaffins such as cyclopropene, cyclobutene, cyclopentene, cyclohexane, cycloheptene, cyclooctene, cyclononene, cyclodecene, and cycloolefins such as limonene, tervirun, phelandrene, sylvestrene, thuene, carene, pinene, bornylene, kamphuen, fuenchen , cycloundecane, tricyclene, bisabolene, zingiberene, curcumene, humulene, kajinensesesquivenichen, selinene, caryophyllene, santarene, cedrene, campholene, phylloclatene, bodocarbrene, mirene, and other terpenes, steroids, and the like are used. Examples of aromatic hydrocarbons include benzene, toluene, xylene, hemimelithene, pseudocumene, mesitylene, prenitene, isodurene, durene,
Pentamethylbenzene, hexamethylbenzene, ethylbenzene, propylbenzene, cumene, styrene, biphenyl, terphenyl, diphenylmethane, triphenylmethane, dibenzyl, stilbene, indene, naphthalene, tetralin, anthracene, phenanthrene, etc. are used.

In general, any compound other than hydrocarbons that can be converted into carbon, such as alcohols, ketones, ethers, and esters, can be used.

The amount of hydrogen atoms contained in the a-C film of the present invention is inevitably determined from the manufacturing aspect of using glow discharge, but it is generally contained in an amount of 30 to 60 at% based on the total amount of carbon atoms and hydrogen atoms. Ru. Here, the content of carbon atoms and hydrogen atoms in the film is determined by the conventional method of organic elemental analysis, for example, ○N.
This can be determined by using H analysis.

The amount of hydrogen atoms contained in the a-C film in the present invention varies depending on the form of the film forming apparatus and the conditions during film forming, but for example, increasing the substrate temperature, lowering the pressure, using the raw material hydrocarbon gas, etc. Measures such as lowering the dilution rate of hydrogen, increasing the applied power, lowering the frequency of the alternating electric field, increasing the strength of the direct current electric field superimposed on the alternating electric field, or combinations thereof, can reduce the amount of hydrogen contained. It has the effect of lowering

The thickness of the a-C film as the charge transport layer in the present invention is 5 to 5
A suitable value is 0 μm, especially 7 to 20 Ltm, and if it is thinner than 5 μm, the charging potential will be low, making it impossible to obtain a sufficient copy image density. Moreover, if it is thicker than 50 μm, it is not preferable in terms of productivity.

This a-C film has high light transmittance, high dark resistance, and is rich in charge transport properties, and even if the film thickness is 5 μm or more as mentioned above, carriers are transported without being trapped and contribute to bright attenuation. is possible.

The process of forming an a-C film from a raw material gas in the present invention is a method in which the raw material gas is formed through a plasma state generated by a plasma method using direct current, low frequency, high frequency, microwave, etc. is the most preferable, but it may also be formed through an ionic state that can be generated by ionization vapor deposition, ion beam evaporation, etc., or from neutral particles that can be generated by vacuum evaporation, sputtering, etc. or a combination thereof.

In the present invention, in addition to hydrocarbons, oxygen compounds are used to add at least oxygen atoms into the a-C film. The phase state of the oxygen compound does not necessarily have to be a gas phase at room temperature and normal pressure; it can be used in either a liquid phase or a solid phase as long as it can be vaporized through melting, evaporation, sublimation, etc. by heating or reduced pressure. It is. Examples of oxygen compounds include oxygen, ozone, water vapor, -carbon oxide, carbon dioxide, carbon suboxide, and other inorganic compounds, hydroxyl groups (-OH), aldehyde groups (-COH), acyl groups (RCO-, -C
RO), ketone group (>Co), ether bond (-〇-
), ester bond (-Co0-), heterocycle containing oxygen,
An organic compound having a functional group or bond such as the like is used. As the organic compound having a hydroxyl group and 1-, for example, methanol, ethanol, propatool, butanol, furyl alcohol, fluoroethanol, fluorobutanol, phenol, cyclohexanol, benzyl alcohol, furfuryl alcohol, etc. are used. Examples of organic compounds having an aldehyde group include formaldehyde, acetaldehyde, propionaldehyde,
Butyraldehyde, glyoxal, acrolein, benzaldehyde, furfural, etc. are used. Examples of organic compounds having an acyl group include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, valmitic acid, stearic acid, oleic acid, oxalic acid, malonic acid, succinic acid,
Acidic acid, toluic acid, salicylic acid, cinnamic acid, naphthoic acid, phthalic acid, furanic acid, etc. are used. Examples of organic compounds having a ketone group include acetone, niger methyl ketone, methyl propyl ketone, butyl methyl ketone, binacolon, diethyl ketone, methyl vinyl ketone, mesityl oxide, methylhebutenone, cyclobutanone, cyclopentanone, cyclohexanone, Acetophenone, propiophenone, butyrophenone, valerophenone, dibenzyl ketone, acetonaphthone, acetochenone, acetofuron, etc. are used. Examples of organic compounds having an ether bond include methyl ether, ethyl ether, propyl ether, butyl ether, amyl ether, ethyl methyl ether, methyl propyl ether, methyl butyl ether, methyl amyl ether, ethyl propyl ether, ethyl butyl ether, and ethyl amyl ether. , vinyl ether, allyl ether, methyl vinyl ether, methyl furyl ether, ethyl vinyl ether, ethyl allyl ether, anisole, phenethol, phenyl ether, benzyl ether, phenylbenzyl ether, naphthyl ether, ethylene oxide, propylene oxide, trimethylene oxide, tetrahydrofuran, tetrahydrobilane , dioxane, etc. are used. Examples of organic compounds having an ester bond include methyl formate, ethyl formate, propyl formate, butyl formate, amyl formate, methyl acetate, ethyl acetate, propyl acetate, butyl acetate, amyl acetate, methyl propionate, ethyl propionate, and propion. Propyl acid, butyl propionate, amyl propionate, methyl butyrate, ethyl butyrate, propyl butyrate, butyl butyrate, amyl butyrate, methyl valerate, ethyl valerate, propyl valerate,
Butyl valerate, amyl valerate, methyl benzoate, ethyl benzoate, methyl cinnamate, ethyl cinnamate, propyl cinnamate, methyl salicylate, ethyl salicylate, propyl salicylate, butyl salicylate, amyl salicylate, anthranilic acid Methyl, ethyl anthranilate, butyl anthranilate, amyl anthranilate, methyl phthalate, ethyl phthalate, butyl phthalate, etc. are used. Examples of heterocyclic compounds containing oxygen include furan, oxazole, furazane, biran, oxazine, morpholine,
Benzofuran, banzoxazole, chromene, chromane, dibenzofuran, xanthine, phenoxazine, oxolane, dioxolane, oxathiolane, oxadiazine, benzisoxazole, etc. are used.

In the present invention, the amount of oxygen atoms contained as a chemical modifier is 7.0 at % or less based on all constituent atoms. Here, the content of oxygen atoms in the film can be determined by a conventional method of elemental analysis, such as Auger analysis. When the amount of oxygen atoms is higher than 7.0 at%, the oxygen atoms, which ensured suitable transport properties when added in small amounts, exhibit an effect that increases the resistance of the film, causing an increase in the residual potential. . In addition, some oxygen source gases, such as oxygen gas, ozone gas, -
Carbon oxide gas has a strong etching effect, and if you try to increase the amount of oxygen atoms added to the film by increasing the flow rate, the film formation rate will decrease and a certain film thickness will be required. This is inconvenient when forming a charge transport layer. Therefore, the range of the amount of oxygen atoms added in the present invention is important.

In the present invention, the amount of oxygen atoms contained as a chemical modifier can be controlled mainly by increasing or decreasing the amount of the aforementioned oxygen compound introduced into the reaction chamber in which the plasma reaction is performed. If the amount of oxygen compounds introduced is increased,
It is possible to increase the amount of oxygen atoms added to the a-C film according to the present invention, and conversely, if the amount of oxygen compounds introduced is decreased, the amount of oxygen atoms added to the a-C film according to the present invention can be increased. It is possible to reduce the amount added.

In the present invention, silane gas, disilane gas, or fluorinated silane gas is used to form the a-Si film. Furthermore, phosphine gas, diborane gas, or the like is used as a raw material gas for incorporating phosphorus atoms or boron atoms as chemical modifiers into the film. In general, an oxygen compound gas such as oxygen gas, nitrous oxide gas, ozone gas, or -carbon oxide gas is used as a raw material gas for containing oxygen atoms as a chemical modifier in the film.

In the present invention, the amount of phosphorus atoms or boron atoms contained as a chemical modifier is 20,000 atomic ppm or less based on all constituent atoms. Here, the content of phosphorus atoms or boron atoms in the film is determined by a conventional method of elemental analysis, such as Auger analysis or I
This can be known through MA analysis. When the content of phosphorus atoms or boron atoms in the film is higher than 20,000 atomic ppm,
Phosphorus atoms or boron atoms, which, when added in small amounts, ensure suitable transport properties or polarity control effects, conversely exhibit the effect of lowering the resistance of the film, resulting in a decrease in charging ability. Therefore, the range of the amount of phosphorus atoms or boron atoms added in the present invention is important.

In the present invention, the amount of oxygen atoms contained as a chemical modifier is 0.001 to 1 atomic% based on the total constituent atoms.
It is. Here, the content of oxygen atoms in the film can be determined by a conventional method of elemental analysis, such as Auger analysis or IMA analysis. When the content of oxygen atoms in the film is lower than 0.001 at%, the electric resistance value of the a-Si film becomes low, making it difficult for the a-31 film to be subjected to an electric field due to corona charging, etc., and photoexcited carriers are It is not necessarily efficient to inject into the aC film, resulting in a decrease in sensitivity. Furthermore, the charging ability is also reduced. If the content of oxygen atoms in the film is higher than 1 atomic %, the electrical resistance of the a-3i film becomes too high, resulting in a decrease in photoexcited carrier generation efficiency and 5-kinetic speed, resulting in a decrease in sensitivity. invite. Therefore, the range of the amount of oxygen atoms added in the present invention is important.

The amount of hydrogen atoms or fluorine atoms contained in the a-Si film of the present invention is necessarily determined from the manufacturing aspect of using glow discharge, but the total amount of silicon atoms and hydrogen atoms or silicon atoms and fluorine atoms On the other hand, the content is approximately 10 to 35 at%. Here, the content of hydrogen atoms or fluorine atoms in the film can be determined by using conventional methods of elemental analysis, such as ONH analysis and Auger analysis.

The appropriate thickness of the a-3i film as the charge generation layer in the present invention is 0.1 to 5 μm for use in a normal electrophotographic process, and if it is thinner than 0.1 μm, light absorption is insufficient. Therefore, sufficient charge generation is not carried out, leading to a decrease in sensitivity (.Also, if it is thicker than 5 μm, it is not tif in terms of productivity. This a-3i film has a rich charge generation ability, and furthermore, In the product M configuration with the a-C film, which is the most characteristic feature, it is possible to efficiently inject generated carriers into the a-C film and contribute to suitable bright attenuation.

The process of forming an a-Si film from a raw material gas in the present invention is carried out in the same manner as in the case of forming an a-C film.

In the present invention, the amount of oxygen atoms, phosphorus atoms, or boron atoms that can be contained as chemical modifiers is mainly determined by the amount of oxygen compound gas, phosphine gas, or diborane gas that is introduced into the reaction chamber in which the plasma reaction is performed. It can be controlled by increasing or decreasing the amount introduced. By increasing the amount of oxygen compound gas, phosphine gas, or diborane gas introduced, oxygen atoms, phosphorus atoms,
Alternatively, it is possible to increase the amount of - elementary atoms added,
Conversely, if the amount of oxygen compound gas, phosphine gas, or diborane gas introduced is reduced, the amount of oxygen atoms, phosphorus atoms, or boron atoms added to the a-3i film according to the present invention can be reduced. is possible.

It is optimal for the photoreceptor in the present invention to have a functionally separated structure consisting of a charge generation layer and a charge transport layer, and the laminated structure of the charge generation layer and the charge transport layer may be appropriately selected as necessary. is possible.

FIG. 1 shows, as one embodiment, a structure in which a charge transport layer (2) and a charge generation layer (3) are sequentially laminated on a conductive substrate (1). FIG. 2 shows, as another embodiment, a structure in which a charge generation layer (3) and a charge transport layer (2) are sequentially laminated on a conductive substrate (1). In another embodiment, the third A includes a charge transport layer (2), a charge generation layer (3), and a charge transport layer (2) on a conductive substrate (1).
This figure shows a structure in which these are sequentially laminated.

When the surface of the photoreceptor is positively charged using a corona charger or the like and then used for image exposure, in FIG. 1, holes generated in the charge generation layer (3) pass through the charge transport layer (2). In Figure 2, electrons generated in the charge generation layer (3) travel towards the surface of the photoreceptor in the charge transport layer (2), and in Figure 3, electrons are generated in the conductive substrate (1). Holes generated in layer (3) transport charge to the conductive substrate F! (2) electrons travel through the conductive substrate (1), and at the same time electrons generated in the charge generation layer (3) travel through the charge transport layer (2) on the front side toward the surface of the photoreceptor; A static ':J1'fII image is formed with a suitable brightness attenuation. On the other hand, when the surface of the photoreceptor is negatively charged and then used for image exposure, the behavior of electrons and holes can be exchanged to understand the mobility of carriers. In FIGS. 2 and 3, the irradiation light for image exposure passes through the charge transport layer, but since the charge transport layer according to the present invention has excellent translucency, it forms a suitable latent image. Is possible.

FIG. 4 shows a conductive substrate (1), a charge transport layer (2), a charge generation layer (3) and a surface protective layer (
4) is shown in a structure formed by sequentially stacking them. In other words, it corresponds to the form shown in Fig. 1 with a surface protective layer provided, but
In the form shown in Figure 1, the outermost surface is a-3il, which has poor moisture resistance.
In many cases, it is preferable to provide a surface protective layer in order to ensure practical humidity stability. In the case of the configurations shown in FIGS. 2 and 3, since the outermost surface is a highly durable a-C film, there is no need to provide a surface protective layer. For the purpose of adjusting the consistency with respect to various elements within the copying machine, such as prevention, a surface protective layer may be provided as another form.

FIG. 5 shows an intermediate layer (5), a charge generation layer (3), and a charge transport layer (2) on a conductive substrate (1) as a rough form.
This figure shows a structure in which these are sequentially laminated. That is, the second
This corresponds to the form shown in the figure with an intermediate layer provided, but in the form shown in Fig. 2, the bonding surface with the conductive substrate is an a-Si film, so in most cases adhesiveness and injection blocking effect are ensured. It is preferable to provide an intermediate layer for this purpose. In the case of the configurations shown in FIGS. 1 and 3, since the bonding surface with the conductive substrate is the charge transport layer according to the present invention, which has excellent adhesiveness and injection blocking effect, it is not necessary to provide an intermediate layer. For example, an intermediate layer may be provided for the purpose of adjusting compatibility with a manufacturing process before forming a photosensitive layer, such as a pretreatment method for a conductive substrate.

FIG. 6 shows, as a further embodiment, an intermediate layer (5), a charge transport layer (2) and a charge generating N (3) on a conductive substrate (1).
This figure shows a structure in which a surface protection layer (4) and a surface protection layer (4) are sequentially laminated. That is, it corresponds to the form shown in FIG. 1 with an intermediate layer and a surface protective layer provided.

The reason for providing the intermediate layer and the surface protective layer is the same as described above, and therefore, providing the intermediate layer and the surface protective layer in the configurations shown in FIGS. 2 and 3 can be an alternative form.

In the present invention, the intermediate layer and the surface protective layer are 6. in terms of material and manufacturing method. It is not particularly limited and can be selected as appropriate as long as it achieves a predetermined purpose. An a-C film according to the invention may also be used. However, if the material used is, for example, an insulating material as described in the conventional example, the film thickness must be kept at 5 μm or less to prevent generation of residual potential.

The charge transport layer of the photoreceptor according to the present invention decomposes molecules in a gas phase by discharge decomposition under reduced pressure, and diffuses active neutral species or charged electrodes contained in the generated plasma atmosphere onto the substrate, using electric force or magnetism. It is preferable that the polymer be generated by a so-called plasma polymerization reaction, which is induced by force or the like and deposited as a solid phase by a recombination reaction on a substrate.

FIG. 7 shows a photoconductor manufacturing apparatus according to the present invention, and in the figure (701) to (706) are first to sixth tanks in which the raw material compound and carrier gas, which are in a gas phase at room temperature, are sealed, respectively. The tanks are the first to sixth control valves (707)
〜(712) and the first to sixth flow rate controllers (713)〜(
718). (719) to (721) in the figure
) are first to third containers filled with raw material compounds that are in a liquid or solid state at room temperature, and each container is heated by fourth to third temperature controllers (722) to (724) for vaporization. Roughly speaking, each container has seventh to ninth control valves (725) to (727) and seventh to ninth flow rate controllers (727).
28) to (730). These gases are mixed in a mixer (731) and then sent into a reaction chamber (733) via a main pipe (732). The pipes along the way are
Appropriately placed piping heating prevents the vaporized gas from the raw material compound, which is in a liquid or solid state at room temperature, from condensing on the way! (734), heating is possible. A ground electrode (735) and a power application electrode (736) are installed facing each other in the reaction chamber, and each electrode can be heated by an electrode heater (737). The power application electrode (736) is connected to a high frequency power source (739) via a high frequency power matching box (738) and a low frequency power matching box (738).
A low frequency power source (741) is connected through a low-frequency power source (741) and a DC power source (743) is connected through a low-pass filter (742), and power with different frequencies can be applied by a connection selection switch (744). The pressure inside the reaction chamber (733) can be adjusted by a pressure limiting valve (745), and the pressure inside the reaction chamber (733) can be reduced by using a diffusion pump (747), oil, etc. through an exhaust system selection valve (746). Rotary pump (74
8), or cooling exclusion device (749), mechanical booster pump (750), oil rotary pump (748)
This is done by The exhaust gas is made safe and harmless by a suitable exclusion device (753) and then exhausted into the atmosphere. These exhaust system piping can also be heated by appropriately placed piping heaters (734) to prevent the vaporized gas of the raw material compound, which is in a liquid or solid phase state at room temperature, from condensing on the way. ing. reaction chamber (
733) can also be heated by the reaction chamber heater (751) for the same reason, and a conductive substrate (752) is installed on the electrode arranged inside. In Figure 7, the conductive substrate (
752) are fixedly disposed on the ground electrode (735), but may be fixedly disposed on the power application electrode (736), or may be disposed roughly on both sides.

FIG. 8 shows another embodiment of the photoconductor manufacturing apparatus according to the present invention, which is similar to the photoconductor manufacturing apparatus according to the present invention shown in FIG. 7 except for the internal configuration of the reaction chamber (833). can be,
The appended numbers can be understood by replacing the 7o○ series with the 800 series. In FIG. 8, the reaction chamber (83
3) A cylindrical conductive substrate (852) that also serves as the ground electrode (735) in FIG. 7 is installed inside, and an electrode adder P8 (837) is placed inside. Around the conductive substrate (852), there is also a cylindrical power source w.
1 (836), and an electrode heater (837) is placed on the outside.
are arranged. The conductive substrate (852) is rotatable using an external drive motor (854).

The reaction chamber used for photoreceptor production is preliminarily heated by a diffusion pump.
The pressure is reduced to about 0-4 to 10-6 Torr, and the degree of vacuum is confirmed and the gas adsorbed inside the device is desorbed. At the same time, an electrode heater heats the electrode and the conductive substrate fixedly disposed on the electrode to a predetermined temperature. If necessary, an undercoat layer or a charge generation layer may be provided in advance on the conductive substrate in order to obtain a desired photoreceptor structure from among those described above. The present apparatus or a separate apparatus may be used to provide the undercoat layer or the charge generation layer. Next, the raw material gases are introduced into the reaction chamber from the first to sixth tanks and the first to third containers while being kept at a constant flow rate using the first to ninth flow rate controllers, and the inside of the reaction chamber is kept constant using the pressure control valve. Maintain a reduced pressure. After the gas flow rate is stabilized, a connection selection switch is used to selectively select, for example, a high frequency power source, and high frequency power is applied to the power application electrode.

A discharge starts between both 744m, and a solid phase film is formed on the substrate over time. The a-3i film or the a-C film can be formed arbitrarily by changing the raw material gas. Films with different compositions can be laminated by once stopping the discharge, changing the source gas composition, and then restarting the discharge. Also,
It is also possible to gradually change the raw material gas flow rate while continuing the discharge, and to stack films of different compositions with a gradient.

The film thickness is controlled by the reaction time, and when a predetermined film thickness and laminated structure are reached, the discharge is stopped to obtain a photoreceptor according to the present invention. Next, the first to ninth control valves are closed to sufficiently exhaust the inside of the reaction chamber. If the desired photoreceptor configuration is obtained, the vacuum in the reaction chamber is broken and the photoreceptor according to the present invention is taken out from the reaction chamber. Furthermore, in a desired photoreceptor configuration,
If a charge generation layer or an overcoat layer is required, the photoreceptor according to the present invention can be fabricated by using the present device as is, or by breaking the vacuum and transferring it to another device to provide these layers. get.

The present invention will be described below with reference to Examples.

Example 1 Using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: In the glow discharge decomposition device shown in FIG. 7, first, the inside of the reaction device (733) was brought to a high vacuum of about 10 −6 Torr, and then the third control valve (711) was released. , the output pressure of nitrous oxide gas from the third tank (705) is 1.0Kg/
(m2) into the third flow rate controller (717). At the same time, styrene gas was introduced into the first container (719) from the first container (719).
Under temperature controller (722) temperature of 30℃, 7th flow rate controller (
728) Inflow into the inside. Increase the flow rate of nitrous oxide gas to 15
sCCm % and the flow rate of styrene gas to be 45 sCcm, through an intermediate mixer (731),
It flowed into the reaction chamber (733) from the main pipe (732). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure in the reaction chamber (733) was 1.8 Torr. On the other hand, as the conductive substrate (752), fir 50
A low frequency power source (741) was prepared by using an aluminum substrate measuring 50 mm in width and 3 mm in thickness, preheated to 150°C, and connected to the connection selection switch (744) with the gas flow rate and pressure stable. and applied 130W of power to the power application electrode (736) at a frequency of 40KHz.
A plasma polymerization reaction was carried out for about 1 hour and 15 minutes under the following conditions, and an a-C film having a thickness of 15 μm was formed as a charge transport layer on the conductive substrate (752). After the film formation was completed, power application was stopped, the control valve was closed, and the inside of the reaction chamber (733) was sufficiently evacuated.

When organic elemental analysis was performed on the a-C film obtained as described above, the amount of hydrogen atoms contained was 42 at % based on the total amount of carbon atoms and hydrogen atoms. Moreover, the amount of oxygen atoms contained was 1.9 at % based on the total constituent atoms according to Auger analysis.

Charge generation layer forming step: Next, the first control valve (707), the fifth TA control valve (711)
), and the sixth control valve (712) are released, and the first tank (
701), nitrous oxide gas from the fifth tank (705), and silane gas from the sixth tank (706) at the first, fifth, and sixth tanks under an output pressure of IKg/cm2.
It was made to flow into the flow controllers (713, 717, and 718). simultaneous.

, the 4th FA control valve (710) is released and the 4th tank (710) is released.
Diborane gas diluted to 1100 pp with hydrogen gas from 04) was flowed into the fourth flow rate controller (716) under an output pressure of 1.5 Kg/cm2.

Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200.
secm, nitrous oxide gas flow rate 3sec, silane gas flow rate 1001005e hydrogen gas 1100pp
The flow rate of the diborane gas diluted to 10105e was set to 10105e, and the diborane gas was allowed to flow into the reaction chamber (733). After each flow rate stabilized, the pressure inside the reaction chamber (733) was reduced to 1.0 Torr.
The pressure regulating valve (745) was adjusted so that the temperature was r. On the other hand, the conductive substrate (752) on which the a-C film is formed is
Heated to 240℃, and with stable gas flow rate and pressure, a high frequency N source (739) was used to generate a frequency of 13.56M.
A power of 45 Watt was applied to the power application electrode (736) under Hz to generate glow discharge. This discharge was carried out for 5 minutes to obtain a charge generation layer having a thickness of 0.3 μm.

The obtained a-SiFJ was subjected to in-metal ONH analysis (EMGA-1300 manufactured by Itaba Manufacturing Co., Ltd.), Auger analysis, and IMA analysis, and it was found that the hydrogen atoms contained were 21 atomic% based on the total constituent atoms, and the boron Atom is 11 atoms pp
m5 oxygen atoms were 0.31 at.%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values at 11 positive charges are shown in parentheses, and the highest charging potential is -860V (+850V).In other words, since the total photoreceptor film thickness is 15°3μm, the charging capacity per μm is It was extremely high at 56 V/μm (55 V/μm), and from this it was understood that it had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 38 seconds (approximately 32 seconds).
seconds), and from this we can understand that it has sufficient charge retention performance. Furthermore, after initial charging to the highest charging potential, white light was used to brightly attenuate the surface potential to 20% of the highest charging potential, and the amount of light required was 2.0 lux · seconds (2.9 lux · seconds), and from this it was understood that it had sufficient photosensitivity performance.

From the above, it can be understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

Furthermore, using the manufacturing equipment according to the present invention, equipment as shown in FIG. 1 can be manufactured.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: In the glow discharge decomposition apparatus shown in FIG. 3 (707,708
, and 7o9), hydrogen gas from the first tank (701), ethylene gas from the second tank (702), and oxygen gas from the third tank (703) at an output pressure of 1.0.
1st, 2nd and 3rd flow rate system under Kg/am2? :s
The water flowed into the pipes (713, 714, and 715). Then, adjust the scales of the meters on each flow rate side to set the hydrogen gas flow rate to 60 seconds and the ethylene gas flow rate to 60 seconds.
And the flow rate of oxygen gas is set to 10105e, and the main! (732)
The liquid then flowed into the reaction chamber (733). After each flow rate stabilizes, the pressure inside the reaction chamber (733) is 2.2 Torr.
The pressure control valve (745) was adjusted so that on the other hand,
The conductive substrate (752) is fir 50 x width 50 x thickness 3
Using an aluminum substrate with a diameter of 1 to the application electrode (736)
A plasma polymerization reaction was carried out for about 3 hours by applying a power of 50 Watts at a frequency of 13.56 MHz to form a 15 μm thick a-C film as a charge transport layer on the conductive substrate (752). After the film formation was completed, power application was stopped, the control valve was closed, and the inside of the reaction chamber (733) was sufficiently evacuated.

Organic elemental analysis was performed on the a-CM obtained as described above, and the amount of hydrogen atoms contained was 39 at% based on the total amount of carbon atoms and hydrogen atoms. The amount of oxygen atoms was 3.0 at% based on the total constituent atoms.

Charge generation layer forming step: Next, the first control valve (707) and the fifth control valve (711)
, and the sixth control valve (712), and the first tank (7
Hydrogen gas from the fifth tank (705), and silane gas from the sixth tank (706) are supplied to the first, fifth, and sixth flow rate controllers (713, 01) under an output pressure of IKg/cm2. 717 and 718). At the same time, the fourth regulator valve (710) is released and the fourth tank (710) is released.
Phosphine gas diluted to 10 ppm with hydrogen gas from 04) was allowed to flow into the fourth flow rate controller (716) under an output pressure of 1.5 Kg/cm2. Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 2005 CCrn and the oxygen gas flow rate to 1.3 sec.

The flow rate of silane gas is 200 sec, and the flow rate of hydrogen gas is 100 sec.
The flow rate of phosphine gas diluted to ppm is 101
The temperature was set at 05e to allow the flow into the reaction chamber (733). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 0.9 Torr. On the other hand, the conductive substrate (752) on which the a-C film is formed is heated to 250°C, and is heated at a frequency of 13.56 MHz from a high frequency power source (739) while the gas flow rate and pressure are stable. 3 to the power application electrode (736)
A power of 5 Watts was applied to generate glow discharge.

This discharge was carried out for 5 minutes to obtain a charge generation layer having a thickness of 0.374 m.

The obtained a-3i film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 18 at %, the phosphorus atoms were 12 at ppm,
The oxygen atom content was 0.3 at.%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values at the time of positive charging are shown in parentheses, and the highest charging potential is -840V (+950V), that is,
Since the total photoreceptor film thickness was 15.degree. 3 .mu.m, the charging ability per 1 .mu.m was extremely high at 55 V/.mu.m (62 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 35 seconds (approximately 46 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, the brightness was decreased to a surface potential of 20% of the highest charging potential using white light, and the required scene was 2.9 lux seconds (9, flux・seconds), and from this it was understood that it had sufficient photosensitivity performance.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

Using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: In the glow discharge decomposition apparatus shown in FIG. 7, first, the inside of the reaction apparatus (733) was brought to a high vacuum of about 10-6 Torr, and then the third control valve (709) was released. , oxygen gas is discharged from the third tank (703) at a pressure of 1. ○Kg/cm
2 into the third flow controller (715). At the same time, myrcene gas is supplied from the first container (719) to the first temperature controller (722) at a temperature of 120°C and the seventh flow rate controller (72
8) Don't let it flow inside. The flow rate of oxygen gas was set to 4 sec and the flow rate of myrcene gas was set to 20 sec, and the main pipe (732) was passed through an intermediate mixer (731).
The liquid then flowed into the reaction chamber (733).

After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 1.5 Torr. On the other hand, as a conductive substrate (752),
Using an aluminum substrate of 0x width 50x thickness 3mm, heat it in advance to 150°C, and with the gas flow rate and pressure stable, connect the low-wave power source (744) with the connection selection switch (744) in advance. 741) and apply 120Watt power to the power application electrode (736) at a frequency of 35KH.
Plasma polymerization reaction was carried out for about 2 hours and 40 minutes by applying voltage under
The membrane was formed as a charge transport layer.

After the film formation was completed, power application was stopped, the control valve was closed, and the inside of the reaction chamber (733) was sufficiently evacuated.

When organic elemental analysis was performed on the a-C film obtained as described above, the amount of hydrogen atoms contained was 47 at % based on the total amount of carbon atoms and hydrogen atoms. Moreover, the amount of oxygen atoms contained was 0.7 at % based on the total constituent atoms according to Auger analysis.

Charge generation layer forming step: Next, the first control valve (707) and the fifth control valve (711
), and the sixth control valve (712) are released, and the first tank (
Hydrogen gas from the fifth tank (701), oxygen gas from the fifth tank (705), and silane gas from the sixth tank (706) are supplied to the first, fifth, and sixth flow rate controllers (713, 717 and 718).

At the same time, the fourth control valve (710) is released and the fourth tank (
Diborane gas diluted to 1100 pp with hydrogen gas (704) was flowed into the fourth flow rate controller (716) under an output pressure of 1.5 Kg/am'. Adjust the scale of each flow rate controller to set the flow rate of hydrogen gas to 200 sec, the flow rate of acid poison gas to 0.5 sec, and the flow rate of silane gas to 101 sec.
005e, the flow rate of diborane gas diluted to 100 ppm with hydrogen gas was set to 10105e, and the reaction chamber (7
33) There was an inflow into the interior. After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 0.9 Torr. On the other hand, the conductive substrate (752) on which the a-C film is formed is heated to 230°C, and is heated at a frequency of 13.56 MHz from a high frequency power source (739) while the gas flow rate and pressure are stable. A power of 35 Watts was applied to the power application electrode (736) to generate glow discharge. This discharge was performed for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-Si film was subjected to ○NH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 20 atomic % and the boron atoms were 12 atomic ppm based on the total constituent atoms.
The 5 oxygen atoms were 0.1 at%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest band'R potential is -660V (+660V).In other words, since the total photoreceptor film thickness is 15°3μm, the charging capacity per μm. The charging performance was extremely high at 43 V/am (43 V/am), and it was understood from this that it had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 46 seconds (approximately 17 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, white light was used to brightly attenuate the surface potential to 20% of the highest charging potential.The amount of light required was 1.4 lux sec (1, flux seconds), and from this it was understood that it had sufficient photosensitivity performance.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

By using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: In the glow discharge decomposition apparatus shown in FIG. Valve (707,
708 and 709), and the first tank (701
), butadiene gas from the second tank (702), and oxygen gas from the third tank (703) are supplied to the first, second, and third flow rate controllers (713) under an output pressure of 1.0 Kg/cm2, respectively. , 714, and 715).

Set the flow rate of hydrogen gas to 90 sCcm, the flow rate of butadiene gas to 70 sCcm, and the flow rate of oxygen gas to 18 sCcm, and through the mixing conversation (731),
It flowed into the reaction chamber (733) from the main pipe (732). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 2.27 orr.

On the other hand, as the conductive substrate (752), w150. X1
Using a 50X 3mm thick aluminum substrate, 12
After heating the gas to 0°C and stabilizing the gas flow rate and pressure, turn on the low frequency power supply (741) that was previously connected using the connection selection switch (744), and connect the power application electrode (744).
A plasma polymerization reaction was carried out for about 30 minutes by applying a power of 100 Wa11 to 36) at a frequency of 500 KHz to form a 15 μm thick a-C film as a charge transport layer on the conductive substrate (752). After the film formation was completed, power application was stopped, the control valve was closed, and the inside of the reaction chamber (733) was sufficiently evacuated.

Organic elemental analysis was performed on the a-C film obtained as described above, and the amount of hydrogen atoms that could be contained was 55 at% based on the total amount of carbon atoms and hydrogen atoms. The amount of oxygen atoms was 4.8 at% based on the total constituent atoms.

Charge generation layer forming step: Next, the first control valve (707) and the fifth control valve (711)
, and the sixth control valve (712), and the first tank (7
01), nitrous oxide gas from the fifth tank (705), and silane gas from the sixth tank (706), the first, fifth, and sixth flow rate controllers ( 713, 717, and 718). At the same time, the fourth control valve (710) is opened, and phosphine gas diluted to 10 ppm with hydrogen gas is supplied from the fourth tank (704) to the fourth tank under an output pressure of 1.5 kg/am2.
It was made to flow into the flow rate limiter (716).

Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200.
scem% Flow rate of nitrous oxide gas is 10 s CCm Flow rate of M silane gas is 200 sec m % Flow rate of phosphine gas diluted to LoopPm with hydrogen gas is 1
0105e and flowed into the reaction chamber (733). After each flow rate stabilizes, the pressure regulating valve (745) is adjusted so that the pressure in the reaction chamber (733) becomes 0.8 Torr.
adjusted. On the other hand, the conductive substrate (752) on which the a-C film has been completely formed is heated to 230°C, and with the gas flow rate and pressure stable, it is heated at a frequency of 13.56 MHz from a high frequency power source (739). A glow discharge was generated by applying a power of 35 Watts to the power application electrode (736).

This discharge was carried out for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-3i film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and IM.
As a result of A analysis, the amount of hydrogen atoms that could be contained was 22 at %, the amount of phosphorus atoms was 10 at ppm, and the amount of oxygen atoms was 1.0 at % based on the total constituent atoms.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -920V (+990V), that is,
Since the total photoreceptor film thickness was 15.degree. 3 .mu.m, the charging ability per 1 .mu.m was extremely high at 60 V/.mu.m (65 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 40 seconds (approximately 43 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, white light was used to brightly attenuate the surface potential to 20% of the highest charging potential.The amount of light required was 5.0 lux·sec (16.2 lux・Seconds), and from this we can understand that it has photosensitivity performance that poses no practical problems.

From the above, it can be understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

By using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: In the glow discharge decomposition apparatus shown in FIG. Valve (707,
708, and 7o9), and the first tank (701)
Hydrogen gas, acetylene gas from the second tank (702), and oxygen gas from the third tank (703) were supplied to the first, second, and third tc under an output pressure of 1.0 Kg/am2, respectively.
It ml? a M (713, 714, and 715)
Don't let it flow inside.

Then, adjust the scales of each flow rate controller to set the hydrogen gas flow rate to 88 seconds and the acetylene gas flow rate to 45 seconds.
, and the flow rate of oxygen gas is set to 24 seconds, and the main! (732
) into the reaction chamber (733). After the respective flow rates stabilized, the pressure in the reaction chamber ('?33) decreased to 2. ○To
The pressure regulating valve (745) was adjusted so that rr. On the other hand, as a conductive substrate (752), *5OX horizontal 50×
Using an aluminum substrate with a thickness of 3 mm, preheat it to 200°C, and with the gas flow rate and pressure stable, turn on the high frequency power source (739) that was previously connected with the connection selection switch (744). Applied power i (736
) was applied with a power of 100 Watts at a frequency of 4 MHz to perform a plasma polymerization reaction for about 4 hours and 40 minutes to form a 15 μm thick a-CFJ as a charge transport layer on the conductive substrate (752). After the film formation was completed, power application was stopped, the control valve was closed, and the inside of the reaction chamber (733) was sufficiently evacuated.

Organic elemental analysis was performed on the a-CIl'Jl obtained as described above, and the amount of hydrogen atoms that could be contained was 30 at% based on the total amount of carbon atoms and hydrogen atoms. The amount of oxygen atoms was 6.1 at% based on the total constituent atoms.

': 4 charge generation layer formation step: Next, the first control valve (707) and the fifth control valve (711
), and the sixth control valve (712) are released, and the first tank (
Hydrogen gas from the fifth tank (705), and silane gas from the sixth tank (706) are supplied to the first, fifth, and sixth flow rate controllers (713, 701) under an output pressure of IKg/cm2. 717 and 718).

At the same time, the fourth control valve (710) is released and the fourth tank (
Diborane gas diluted to 1100 pp with hydrogen gas (704) was flowed into the fourth flow rate controller (716) under an output pressure of 1.5 Kg/cm2. Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 2 degrees Osccms, the oxygen gas flow rate to 5 seconds, and the silane gas flow rate to 1010 degrees.
05e, the flow rate of diborane gas diluted to 1°○ppm with hydrogen gas was set to 1°sccm, and the reaction chamber (733)
It flowed inside. After each flow rate stabilizes, the reaction chamber (
The pressure regulating valve (745) was adjusted so that the pressure inside the tube (733) was 0.8 Torr. On the other hand, the conductive substrate (752) on which the a-C film is formed is heated to 250°C, and is heated at a frequency of 13.56 MHz from a high frequency power source (739) while the gas flow rate and pressure are stable. A power of 40 Watts was applied to the power application electrode (736) to generate glow discharge.

This discharge was performed for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-Si film was subjected to ONH analysis in metal (EMGA-1300 required by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 24 at.% of the total constituent atoms, and the boron atoms were 10 at.ppm.
% oxygen atom was 1 atom %.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -955V (+970V), that is,
Since the total photoreceptor film thickness was 15.3 .mu.m, the charging ability per 1 .mu.m was extremely high at 62 V/.mu.m (63 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 38 seconds (approximately 42 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, bright decay was performed using white light to a surface potential of 20% of the highest charging potential.・Seconds), and from this it was understood that it had a photosensitivity performance that would pose no problem in practical use.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

Example 6 Using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: A charge transport layer of a photoreceptor according to the present invention was formed in the same manner as in Example 3.

Charge generation layer forming step: Next, after replacing the tank, the first control valve (707),
The fifth control valve (711) and the sixth control valve (712) are released to supply hydrogen gas from the first tank (701), oxygen gas from the fifth tank (705), and silane gas from the sixth tank (706). , the first, fifth, and sixth flow rate regulators (713, 717, and 71
8) It was allowed to flow into the interior. At the same time, the fourth control valve (710) is released and hydrogen gas is supplied from the fourth tank (704) to Lopp.
Phosphine gas diluted to
am2 into the fourth flow controller (716). Adjust the scale of each 'tC amount controller to set the hydrogen gas flow rate to 200 sec, the oxygen gas flow rate to 0.5 sec,
The flow rate of silane gas is 110 with 200SCCm% hydrogen gas.
The flow rate of phosphine gas diluted to 0pp is 10s e
cm, and flowed into the reaction chamber (733). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure in the reaction chamber (733) was 1°○Torr. On the other hand, a conductive substrate (
752) is heated to 250°C, and with the gas flow rate and pressure stable, a high frequency power source (739) applies power to the electrode (736) at a frequency of 13.56 MHz at 40°C.
Apply Watt power and generate a glow discharge. This discharge was carried out for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-Si film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), t-dielectric analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 23 at% of the total constituent atoms, the phosphorus atoms were 13 at ppm,
The oxygen atom content was 0.1 at.%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -540V (+780V), that is,
Since the total photoreceptor film thickness was 15.degree. 3 .mu.m, the charging ability per 1 .mu.m was extremely high at 35 V/.mu.m (51 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 13 seconds (approximately 19 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, the brightness was attenuated to a surface potential of 20% of the highest charging potential using white light, and the amount of light required was 1.1 lux · seconds (2.9 lux · seconds), and from this it was understood that it had sufficient photosensitivity performance.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has superior performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

By using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: A charge transport layer of a photoreceptor according to the present invention was formed in the same manner as in Example 1.

Charge generation layer forming step: Next, after replacing the tank, the first control valve (707),
3rd vA9 valve (709), 5th XI1 valve (711)
, and the sixth control valve (712), and the first tank (7
Hydrogen gas from 01), tetrafluorosilane gas from the third tank (703), nitrous oxide gas from the fifth tank (705), and silane gas from the sixth tank (70'6) at an output pressure of 1 g/cm2 1st, 3rd, 5th, and 6th z under
The liquid was allowed to flow into the dose control devices (713, 715, 717, and 718). At the same time, release the fourth control valve (710),
Phosphine gas diluted to 10 ppm with hydrogen gas was flowed from the fourth tank (704) into the fourth flow rate controller (716) under an output pressure of 1.5 kg/cm2. Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200 se.
cms Flow rate of silane tetrafluoride gas: 50 SCcrrh Flow rate of nitrous oxide gas: 0.1 sccrr + 1 Flow rate of silane gas: 55 sCCm% Set the flow rate of phosphine gas diluted to 1100 pp with hydrogen gas to 10105e, and add it to the reaction chamber (733). I let it flow in. After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 0.8 Torr. On the other hand, a-
The conductive substrate (752) on which the C film is formed is 240
℃, and with the gas flow rate and pressure stable, 35 Watt power was applied to the power application electrode (736) at a frequency of 13.56 MHz from the high frequency power source (739) to generate glow discharge. . This discharge was carried out for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-3i film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 20 at % of the total constituent atoms, the phosphorus atoms were 10 at ppm,
The content of jl elementary atoms was 0.1 at%, and the content of fluorine atoms was 4.9 at%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -720V (+980V), that is,
Since the total photoreceptor film thickness was 15°3 μm, the charging ability per 1 μm was extremely high at 47 V/μm (64 V/um), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 23 seconds (approximately 34 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, white light was used to brightly attenuate the surface potential to 20% of the highest charging potential.The amount of light required was 1. flux seconds (4.4 lux seconds), and from this it can be understood that it has sufficient photosensitivity performance.

From the above, it can be understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

By using the manufacturing apparatus according to the present invention, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: A charge transport layer of a photoreceptor according to the present invention was formed in the same manner as in Example 2.

Charge generation layer forming step: Next, after replacing the tank, the first control valve (707),
The third control valve (709), the fifth control valve (711), and the sixth control valve (712) are released, hydrogen gas is released from the first tank (701), tetrafluorosilane gas is removed from the third tank (703), Nitrous oxide gas is supplied from the fifth tank (705) and silane gas is supplied from the sixth tank (706) at an output pressure of IKg/
The first, third, fifth, and sixth flow controllers (under cm2)
713, 715, 717, and 718). At the same time, the fourth FA control valve (710) is opened, and diborane gas diluted to 1100 pI with hydrogen gas is supplied from the fourth tank (704) to the fourth flow rate controller (716) under an output pressure of 1°5 Kg/cm2. I let it flow inside. Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200 sec.
The flow rate of silane tetrafluoride gas is 50 seconds, the flow rate of nitrous oxide gas is 1 seconds, and the flow rate of silane gas is 50 SCC.
The flow rate of diborane gas diluted to 1100pp with m1 hydrogen gas was set to 1103cc, and the reaction chamber (7
33). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure in the reaction chamber (733) was 0°9 Torr. On the other hand, the conductive substrate (752) on which the a-C film has been completely formed is heated to 250°C, and with the gas flow rate and pressure stable, it is heated at a frequency of 13.56 MHz from a high frequency power source (739). Applying 35 Watts of power to the power application electrode (736),
Generated a glow discharge. This discharge was carried out for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-Si film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and IMA analysis, and it was found that the number of hydrogen atoms contained was 22 atoms out of all the constituent atoms. %, boron atom is 10 atomic pp
m, fluorine atoms were 5 at %, and oxygen atoms were 0.1 at %.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -950V (+960V), that is,
Since the total photoreceptor film thickness was 15°3 .mu.m, the charging ability per 1 .mu.m was extremely high at 62 .mu.m (63 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 45 seconds (approximately 48
seconds), and from this it was understood that it had sufficient charge retention performance. Furthermore, after initial charging to the highest charging potential, white light was used to brightly attenuate the surface potential to 20% of the highest charging potential.The amount of light required was 4.0 lux·sec (4. seconds), and from this we can understand that it has sufficient photosensitivity performance.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

As shown in FIG. 1, using the production apparatus according to the present invention,
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: A charge transport layer of a photoreceptor according to the present invention was formed in the same manner as in Example 4.

Charge generation layer forming step: Next, after replacing the tank, the first control valve (707),
The fifth control valve (711L) and the sixth control valve (712) are released, and hydrogen gas is transferred from the first tank (701) to the fifth tank (
705) and nitrous oxide gas from the sixth tank (706
) under an output pressure of IKg/Cm2.
, fifth, and sixth flow rate controllers (713, 717, and 7
18) It was allowed to flow into the interior. At the same time, the fourth control valve (710)
100 with hydrogen gas from the fourth tank (704).
Diborane gas diluted to ppm is supplied at an output pressure of 1.5
Kg/am2 into the fourth flow controller (716). Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200 sec and the nitrous oxide gas flow rate to 0.01 sec.
secm, the flow rate of silane gas is 100 sec cm,
The flow rate of diborane gas diluted to 10 oppm with hydrogen gas was set to 10105e, and the reaction chamber (733
). After each flow rate became stable, the pressure control valve (745) was adjusted so that the pressure inside the reaction chamber (733) was 0.8 Torr. On the other hand, the conductive substrate (7E52) on which the a-C film is formed is heated to 250°C, and the high-rise
e. Apply 35 Watts of power to the power application electrode (736) at a frequency of 13.56 MHz from the power supply (739) to generate no glow discharge. Do this discharge for 5 minutes,
A charge generation layer with a thickness of 0.3 μm was obtained.

The obtained a-3i film was subjected to ○NH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 22 atomic% and the boron atoms were 10 atomic ppm based on the total constituent atoms.
, oxygen atoms were 0.001 atomic %.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -900V (+900V), that is,
Since the total photoreceptor film thickness was 15.degree. 3 .mu.m, the band':4 power per lum was extremely high at 59 V/.mu.m (59 V/.mu.m), and from this it was understood that it had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 43 seconds (approximately 39 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, the brightness was attenuated to a surface potential of 20% of the highest charging potential using white light.The required light amount was 4.5 lux seconds (4.5 lux・seconds), and from this we can understand that it has sufficient photosensitivity performance.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

Once the process is completed, as shown in FIG.
A photoreceptor of the present invention was prepared in which a conductive substrate, a charge transport layer, and a charge generation layer were provided in this order.

Charge transport layer forming step: A charge transport layer of a photoreceptor according to the present invention was formed in the same manner as in Example 5.

Charge generation layer forming step: Next, the 1'fA control valve (707) and the 5th control valve (707)
11) and the sixth control valve (712), hydrogen gas is supplied from the first tank (701), nitrous oxide gas is supplied from the fifth tank (705), and silane gas is supplied from the sixth tank (706), and the output pressure is increased. It was flowed into the first, fifth and sixth flow controllers (713, 717 and 718) under IKg/cm2. At the same time, the fourth control valve (710) is released, and the Bosphin gas diluted to 10 ppm with hydrogen gas is supplied from the fourth tank (704) to the fourth flow rate limit W ( 716) Don't let it flow inside.

Adjust the scale of each flow rate controller to set the hydrogen gas flow rate to 200.
The flow rate of 3CCm% nitrous oxide gas is O0○lsec,
The flow rate of silane gas is 200 sec, and the flow rate of hydrogen gas is 110 sec.
The flow rate of phosphine gas diluted to 0pp is 10105
It was set at 100 m and flowed into the reaction chamber (733). After each flow rate stabilizes, the pressure inside the reaction chamber (733) is 0.8
The pressure control valve (745) was adjusted so that the pressure was Torr.

On the other hand, a conductive substrate (752) on which an a-C film is formed
is heated to 250°C, and when the gas flow rate and pressure are stable, the frequency is 13.5 from the high frequency power supply (739).
40Watt to the power application electrode (736) under 6MHz
Apply power and do not cause glue discharge. This discharge was carried out for 5 minutes to obtain a charge generation layer with a thickness of 0.3 μm.

The obtained a-Si film was subjected to ONH analysis in metal (EMGA-1300 manufactured by Itaba Seisakusho), Auger analysis, and I
When MA analysis was performed, the hydrogen atoms contained were 20 at % based on the total constituent atoms, the phosphorus atoms were 10 at ppm,
The oxygen atom content was 0.001 at.%.

Characteristics: When the obtained photoreceptor was used with both negative and positive charging in a conventional Carlson process, the following performance was obtained. Here, the measured values during positive charging are shown in parentheses, and the highest charging potential is -820V (+970V), that is,
Since the total photoreceptor film thickness was 15.degree. 3 .mu.m, the charging ability per 1 .mu.m was extremely high at 53 V/.mu.m (63 V/.mu.m), and from this it was understood that the photoreceptor had sufficient charging performance.

In addition, the time required for dark decay from Vmax to 90% of Vmax in the dark was approximately 46 seconds (approximately 41 seconds).
seconds), and from this it was understood that it had sufficient charge retention performance. In addition, after initial charging to the highest charging potential, the brightness was attenuated to a surface potential of 20% of the highest charging potential using white light.The required light amount was 6.0 lux·sec (13.5 lux・Seconds), and from this it was understood that it had a photosensitivity performance that would pose no problem in practical use.

From the above, it is understood that the photoreceptor according to the present invention shown in this example has excellent performance as a photoreceptor.

Further, when an image was formed and transferred to this photoreceptor using the commonly used Carlson process, a clear image was obtained.

[Brief explanation of the drawing]

1 to 6 are drawings showing the structure of a photoreceptor according to the present invention, and FIGS. 7 to 8 are drawings showing an apparatus for manufacturing a photoreceptor according to the invention. Applicant: Minolta Camera Co., Ltd. Figure Z″ , Name of the invention Photoconductor 3, Relationship with the person making the amendment Applicant address 2-30 Azuchi-cho, Higashi-ku, Osaka Name of Osaka Kokusai Building ((507) Minolta Camera Co., Ltd. Voluntary amendment 5, Drawing subject to amendment 6, Figure 8 of the perforation drawing of the amendment will be corrected as shown in "Corrected Figure 8".

Claims (1)

[Claims] In a functionally separated photoreceptor having a charge generation layer and a charge transport layer, the charge transport layer is a hydrogenated amorphous carbon film containing at least oxygen atoms, and the charge generation layer contains oxygen atoms. and a hydrogenated amorphous silicon film containing at least one of phosphorus atoms and boron atoms, or a fluorinated amorphous silicon film containing oxygen atoms and at least one of phosphorus atoms and boron atoms. A photoreceptor characterized by: