JPS6380555A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6380555A JPS6380555A JP22679186A JP22679186A JPS6380555A JP S6380555 A JPS6380555 A JP S6380555A JP 22679186 A JP22679186 A JP 22679186A JP 22679186 A JP22679186 A JP 22679186A JP S6380555 A JPS6380555 A JP S6380555A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- metal layer
- substrate
- thermal conductivity
- good thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の放熱構造に関し、特に半導体基
板の上面にある高出力のトランジスタ等の発熱素子から
発生する熱を、半導体基板の下面が個着される素子容器
へ放熱させる際、発熱素子から素子容器までの熱抵抗を
下げて、半導体装この電気的特性および信頓性を向上さ
せる構造に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a heat dissipation structure for a semiconductor device, and in particular, the present invention relates to a heat dissipation structure for a semiconductor device, and in particular to a method for dissipating heat generated from a heat generating element such as a high output transistor on the upper surface of a semiconductor substrate to the lower surface of the semiconductor substrate. The present invention relates to a structure that improves the electrical characteristics and reliability of a semiconductor device by lowering the thermal resistance from the heating element to the element container when dissipating heat to the element container in which the semiconductor device is individually attached.
従来この種の半導体装置は、第2図に示すように、半導
体基板1の上面にあるトランジスタ等の発熱素子4によ
り、発生する熱を半導体基板1の下面を通して素子容器
5へ効率良く放熱するため、半導体基板1の下面側から
全面を薄く削り、薄くした半導体基板1の下面全面に熱
伝導率の良い金属層を形成して、発熱素子から素子容器
までの熱抵抗を下げていた。Conventionally, in this type of semiconductor device, as shown in FIG. 2, heat generated by a heat generating element 4 such as a transistor on the upper surface of a semiconductor substrate 1 is efficiently radiated to an element container 5 through the lower surface of the semiconductor substrate 1. The entire lower surface of the semiconductor substrate 1 is shaved thinly, and a metal layer with good thermal conductivity is formed on the entire lower surface of the thinned semiconductor substrate 1 to lower the thermal resistance from the heating element to the element container.
上述した従来の半導体装置は、半導体基板の下面全体を
20から40μmまで薄く削っているため、半導体基板
の機械的、熱膨張的な強度が著しく劣化させ、半導体装
置の信頼度及びハンドリング性を悪くする欠点がある。In the conventional semiconductor device described above, the entire bottom surface of the semiconductor substrate is shaved to a thickness of 20 to 40 μm, which significantly deteriorates the mechanical and thermal expansion strength of the semiconductor substrate, resulting in poor reliability and handling properties of the semiconductor device. There are drawbacks to doing so.
さらに同様の点から半導体基板の厚さを20μm以下に
することは難しいとされていた。Furthermore, from the same point of view, it has been considered difficult to reduce the thickness of a semiconductor substrate to 20 μm or less.
また、大面積の半導体基板が必要とされる集積回路等を
構成する半導体装はにおいては、機械的、熱的な信頓度
の点から使用できない欠点がある。In addition, it has the disadvantage that it cannot be used in semiconductor devices constituting integrated circuits or the like that require a large area semiconductor substrate due to mechanical and thermal reliability.
本発明の半導体装置は、半導体基板の上面にある発熱素
子から発生する熱を、発熱素子直下の半導体基板を選択
的に薄く除去し、半導体基板を除去した部分に熱伝導率
の良い金属層を形成して、素子容器までの熱抵抗を改善
する放熱構造と、部分的に半導体基板が薄く除去される
ことから半導体基板全体の機械的、熱的な強度および信
頼性が向上され、発熱素子直下の半導体基板の厚さを数
μmまで薄くすることが可能になり、従来の半導体装置
に比べ熱抵抗が少なくできること、また大面積の半導体
基板にも適用が可能である構造を有している。In the semiconductor device of the present invention, the heat generated from the heat generating element on the upper surface of the semiconductor substrate is removed by selectively removing a thin layer of the semiconductor substrate immediately below the heat generating element, and forming a metal layer with good thermal conductivity in the area where the semiconductor substrate is removed. The heat dissipation structure improves the thermal resistance up to the element container, and the semiconductor substrate is partially thinly removed, improving the mechanical and thermal strength and reliability of the entire semiconductor substrate. The thickness of the semiconductor substrate can be reduced to several micrometers, the thermal resistance can be reduced compared to conventional semiconductor devices, and the structure can be applied to large-area semiconductor substrates.
〔実施例]
次に本発明について図面を参照して説明する第1図は本
発明の一実施例の断面図である。[Embodiment] Next, the present invention will be explained with reference to the drawings. Fig. 1 is a sectional view of an embodiment of the present invention.
トランジスタ等の発熱素子4は、半導体基板1の上面に
ある、発熱素子4の直下の半導体基板1は、部分的に選
択的に薄く除去され、除去された部分には熱伝導性の良
いメッキ等による金属層3がある。また金属層3は、メ
ッキ導伝バス用金属層6によって電気的又は熱的に接続
されている。さらに、半導体基板1および金属層3は、
接着用金属B2によって素子容器5に電気的および熱的
に固着される。The heat generating element 4 such as a transistor is located on the upper surface of the semiconductor substrate 1. The semiconductor substrate 1 immediately below the heat generating element 4 is partially selectively removed thinly, and the removed portion is plated with good heat conductivity, etc. There is a metal layer 3 according to Further, the metal layer 3 is electrically or thermally connected by a plating conductive bus metal layer 6. Furthermore, the semiconductor substrate 1 and the metal layer 3 are
It is electrically and thermally fixed to the element container 5 by the adhesive metal B2.
発熱素子4で発生した熱は、一部は空気中を通して放熱
するが、大部分は、薄くなった半導体基板中を通し、熱
伝導の良い金g層を通って素子容器に伝達される。その
際、比較的熱伝導率の悪い半導体基板の厚さによって、
半導体装置の熱抵抗特性が決定される。また、半導体装
置において最も機械的、熱的な強度が弱いのが半導体基
板であるため、半導体基板の厚さの薄い部分の面積が多
い程、信頼性は悪くなる。本発明の半導体装置では、発
熱素子直下の半導体基板の厚さは薄く、半導体基板の薄
い部分の面積を少な(した構造である。A portion of the heat generated by the heating element 4 is radiated through the air, but most of the heat is transmitted to the element container through the thinned semiconductor substrate and through the gold layer with good thermal conductivity. At that time, due to the thickness of the semiconductor substrate, which has relatively poor thermal conductivity,
A thermal resistance characteristic of the semiconductor device is determined. Furthermore, since the semiconductor substrate has the weakest mechanical and thermal strength in a semiconductor device, the reliability becomes worse as the area of the thinner portion of the semiconductor substrate increases. In the semiconductor device of the present invention, the thickness of the semiconductor substrate directly under the heating element is thin, and the area of the thin portion of the semiconductor substrate is reduced.
以上説明し、たように本発明は、トランジスタ等の発熱
素子直下の半導体基板を部分的に選択的に薄<シ、半導
体基板を薄く除去した部分に熱伝導率の良い金属層を有
する構造にすることにより、半導体基板の機械的強度が
向上され、半導体装置の信頼性およびハンドリング性が
向上できる効果がある。また、大面積の半導体基板を必
要とする集積回路、モノミリツク回路等の半導体装置に
も適用ができる利点がある。As described above, the present invention provides a structure in which a semiconductor substrate directly under a heat generating element such as a transistor is partially thinned, and a metal layer with good thermal conductivity is provided in the thinly removed portion of the semiconductor substrate. This has the effect of improving the mechanical strength of the semiconductor substrate and improving the reliability and handling of the semiconductor device. It also has the advantage that it can be applied to semiconductor devices such as integrated circuits and monolithic circuits that require large area semiconductor substrates.
さらに、発熱素子直下の半導体基板の厚さを、従来の半
導体装置の限界であった20μmから数μmまで薄くす
ることができるため、半導体装置の熱抵抗特性を向上さ
せる効果がある。Furthermore, the thickness of the semiconductor substrate directly under the heating element can be reduced from 20 μm, which was the limit of conventional semiconductor devices, to several μm, which has the effect of improving the thermal resistance characteristics of the semiconductor device.
第1図は、本発明の半導体装置の素子の断面図である。 第2図は従来例の断面図である。 1・・・半導体基板、2・・・接着用金属層。 3・・・熱伝導率の良いメッキ等による金属層。 4・・・トランジスタ等の発熱素子。 5・・・素子容器、6・・・メッキ導伝パス用金属層。 代理人 弁理士 内 原 晋、′t゛゛ア、 FIG. 1 is a sectional view of an element of a semiconductor device according to the present invention. FIG. 2 is a sectional view of a conventional example. 1... Semiconductor substrate, 2... Metal layer for adhesion. 3...Metal layer with good thermal conductivity such as plating. 4... Heat generating element such as a transistor. 5... Element container, 6... Metal layer for plating conduction path. Agent: Patent Attorney Susumu Uchihara, 't゛゛a,
Claims (1)
該発熱素子の直下の該半導体基板が下面側から選択的に
除去されて薄い領域を有し、該半導体基板が除去された
部分に熱伝導率の良い金属層を有する半導体装置。It has a heat generating element such as a transistor on the top surface of the semiconductor substrate,
A semiconductor device in which the semiconductor substrate directly under the heating element has a thin region by selectively removing it from the lower surface side, and a metal layer having good thermal conductivity is provided in the portion where the semiconductor substrate is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22679186A JPS6380555A (en) | 1986-09-24 | 1986-09-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22679186A JPS6380555A (en) | 1986-09-24 | 1986-09-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6380555A true JPS6380555A (en) | 1988-04-11 |
Family
ID=16850673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22679186A Pending JPS6380555A (en) | 1986-09-24 | 1986-09-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6380555A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200641A (en) * | 1990-10-04 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device structure including bending-resistant radiating layer |
-
1986
- 1986-09-24 JP JP22679186A patent/JPS6380555A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200641A (en) * | 1990-10-04 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device structure including bending-resistant radiating layer |
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