JPS6379754A - Low dielectric ceramic composition - Google Patents
Low dielectric ceramic compositionInfo
- Publication number
- JPS6379754A JPS6379754A JP61223643A JP22364386A JPS6379754A JP S6379754 A JPS6379754 A JP S6379754A JP 61223643 A JP61223643 A JP 61223643A JP 22364386 A JP22364386 A JP 22364386A JP S6379754 A JPS6379754 A JP S6379754A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- low dielectric
- ceramic composition
- mol
- subcomponent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 title claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 235000010216 calcium carbonate Nutrition 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は、磁器コンデンサ等に使用される５ｒＴｉＯｓ
−ＣａＴｉＯｓ−ＰｂＴｉＯｓ系低誘電率磁器組成物に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application)
-CaTiOs-PbTiOs-based low dielectric constant ceramic composition.
（従来技術〕
従来の低誘電率磁器組成物は５ｒＴｉＯｓ−ＣａＴｉＯ
ｓ−Ｒｉｓｅｓ・ｘＴｉｏｔ系の組成物が一般的に知ら
れているが、この系のものは誘電率が３００程度であっ
た。そしてこれ以上の誘電率を得ようとすると温度係数
が増大し、例えば温度係数は一１５００ＰＰＭ／’Ｃと
なり、また誘電的Ｑ値の劣化等が問題となっていた。(Prior art) The conventional low dielectric constant ceramic composition is 5rTiOs-CaTiO.
Compositions of the s-Rises x Tiot type are generally known, and the dielectric constant of this type was about 300. If an attempt is made to obtain a dielectric constant higher than this, the temperature coefficient increases, for example, to -1500 PPM/'C, and deterioration of the dielectric Q value becomes a problem.
本発明は、前記の問題点を解決しようとするものであり
、＋２５℃〜８５℃の温度範囲において、２５℃の温度
を基準としたとき温度係数が一１５００ＰＰＭ／ を以
下で誘電率が３５０以上と従来のものと比較して大きな
誘電率をもつ低誘電率磁器組成物を提供しようとするも
のである。The present invention aims to solve the above-mentioned problems, and has a temperature coefficient of 11,500 PPM/ or less and a dielectric constant of 350 or more in the temperature range of +25°C to 85°C, based on the temperature of 25°C. The present invention aims to provide a low dielectric constant ceramic composition having a large dielectric constant compared to conventional compositions.
本発明者らは鋭意研究を進めた結果、５ｒＴＩＯｓ−Ｃ
ａＴｉＯｓ ＰｂＴｉＯｓを主成分とし、これに対し
て副成分として旧＊（ｈ −ＴＩＱｚを適当量添加含有
させることによって前記の目的組成物が得られることを
見出し本発明に到達したものである。As a result of intensive research, the present inventors found that 5rTIOs-C
The present invention was achieved by discovering that the above-mentioned target composition can be obtained by containing aTiOs PbTiOs as a main component and an appropriate amount of old*(h-TIQz) as a subcomponent.
さらにまた、副成分としてガラス成分またはＭｎＯ。Furthermore, a glass component or MnO may be used as a subcomponent.
Ｓｉｎｇおよびガラス成分を適正量添加含有させること
によってさらに優れた低誘電率磁器組成物が得られるこ
とを見出したものである。It has been discovered that a more excellent low dielectric constant ceramic composition can be obtained by adding and containing appropriate amounts of Sing and glass components.
Ｃ実施例〕
出発原料として、炭酸ストロンチウム５ｒＣＯ，、炭酸
カルシウムＣａＣＯ３、酸化鉛ｐｂｏ 、酸化チタン〒
１０．、酸化ビスマスａｔ、Ｏ，、酸化マンガンＭｎＯ
。Example C] As starting materials, strontium carbonate 5rCO, calcium carbonate CaCO3, lead oxide pbo, titanium oxide
10. , bismuth oxide at, O, , manganese oxide MnO
.
酸化シリコンＳｉｎ、を用い、第１表の配合比で秤量し
、これら原料配合物をボールミルで湿式混合撹拌を２０
時間行い、その後脱水乾燥し、１０００〜１１００℃で
仮焼成し、化学反応を行わせた。これを再びボールミル
で微粉砕するがこのときガラスフリフト（ガラス成分は
Ｂｔｕｓ ８．０〜９０． Ｏｗｔ％、ＰｂＯ４０〜９
０ｗｔ％、５ｔｙｘ ０〜４０ ｗｔ％を主成分とし、
その他の酸化物ＣａＯ、ＭｇＯ、Ｎａｎｏ等０〜５０ｗ
ｔ％より成る）を添加して混合粉砕する。これを脱水乾
燥して、これに有機結合剤としてＩ’ＶＡを添加し、造
粒整粒を行い顆粒粉末としこの粉末を約３ｔｏｎ／ｃｊ
の成型圧力で１６．５φｘＯ，６ｔｎの円盤状に成型す
る。この成型物を脱バインダし空気中で１２００〜１３
５０℃で約２時間本焼成して磁器−素体を得た。こうし
て得られた磁器素子の両面にＡｇペーストを焼付け、こ
れにリード線を半田付して電極を形成した低誘電率組成
物を得た。Using silicon oxide (Sin), weighed according to the blending ratio shown in Table 1, these raw material blends were wet mixed and stirred in a ball mill for 20 minutes.
After that, it was dehydrated and dried, and pre-calcined at 1000 to 1100°C to carry out a chemical reaction. This is finely pulverized again using a ball mill, but at this time, a glass flift (glass components are Btus 8.0 to 90. Owt%, PbO 40 to 9
0 wt%, 5tyx 0 to 40 wt% as main components,
Other oxides CaO, MgO, Nano etc. 0~50w
t%) and mix and grind. This is dehydrated and dried, I'VA is added as an organic binder, and granulation is performed to make a granulated powder, which is approximately 3 tons/cj.
It is molded into a disk shape of 16.5φxO, 6tn using a molding pressure of . This molded product was debindered and heated to a temperature of 1200 to 13
Main firing was performed at 50°C for about 2 hours to obtain a porcelain element. Ag paste was baked on both sides of the thus obtained ceramic element, and lead wires were soldered thereto to form electrodes to obtain a low dielectric constant composition.
このようにして得られた各試料の電気的緒特性を測定し
た結果を第１表に示した。ここで誘電率ａｓは周波数５
０８２．１．ＯＶで、絶縁抵抗は直流５ｏｏｖを印加し
つつ室温２５℃で測定した。Table 1 shows the results of measuring the electrical characteristics of each sample thus obtained. Here, the dielectric constant as is the frequency 5
082.1. OV, and insulation resistance was measured at room temperature of 25°C while applying 500V of direct current.
以下余白
第１表から明らかなように、本発明の範囲内のものは、
誘電率が約３５０以上と高い値を示し、２５℃の温度を
基準としたとき温度係数が一１５００ＰＰＭ／’ＩＩ：
と小さい値を示している。As is clear from Table 1 below, those within the scope of the present invention are:
The dielectric constant shows a high value of about 350 or more, and the temperature coefficient is 11500 PPM/'II when the temperature is 25°C.
shows a small value.
主成分として、５ｒＴｉＯｓ ４６．０〜６２．０ ｍ
ｏ１％、ＣａＴｉＯｓ ２６．０〜４ Ｂ、 Ｏｓａｔ
％、ＰｂＴｉＯｓ ６．０〜１２．０ｓｏ１％とし、副
成分としてＢｉｔ’ｓ Ｏ−５〜５．２０＠ｔ％、Ｔｉ
Ｏ□０．５〜２．８５ｗｔ％で本発明の目的とする諸特
性を満足している（試料Ｎａｌ〜１９．２８〜３４）、
さらに良好な温度係数を得ようとすると、主成分として
５ｒＴｉＯｓ ４８． ０〜５３．０ ｍｏ１％、Ｃａ
ＴｉＯｓ ３７．０〜４６．０ ｍｏ１％、ＰｂＴｉ０
ｚ ６．５〜１０．０ｍｏｌ ％とし、副成分としてＢ
ｉ＊Ｏｉ ４．１〜５．２ ｗｔ％、Ｔｉ０１１．１〜
２．８５ｗｔ％で温度係数−１０５０〜−１３１０ＰＰ
Ｍ／ｌとかなり良好となる（試料阻１０〜１９．３２〜
３４） 、副成分としてさらにＭｎＯ０〜０．１０ｗｔ
％添加すると本発明の目的とする諸特性を満足するだけ
でなく、コンデンサの特性の一つである絶縁抵抗も大幅
に改善される（試料Ｆｈ３５〜３７）。As a main component, 5rTiOs 46.0-62.0 m
o1%, CaTiOs 26.0~4 B, Osat
%, PbTiOs 6.0-12.0so1%, and as accessory components Bit's O-5-5.20@t%, Ti
O□0.5-2.85wt% satisfies the various properties aimed at by the present invention (sample Nal~19.28-34),
In order to obtain an even better temperature coefficient, 5rTiOs is used as the main component 48. 0-53.0 mo1%, Ca
TiOs 37.0-46.0 mo1%, PbTi0
z 6.5 to 10.0 mol %, and B as a subcomponent
i*Oi 4.1~5.2 wt%, Ti011.1~
Temperature coefficient -1050 to -1310PP at 2.85wt%
M/l is quite good (sample resistance 10~19.32~
34) 0 to 0.10 wt of MnO as a subcomponent
% addition not only satisfies the characteristics aimed at by the present invention, but also significantly improves insulation resistance, which is one of the characteristics of capacitors (samples Fh35 to Fh37).
副成分としてさらに５ｉ（ｈｏ〜３．０ｗｔ％、ガラス
成分０〜２．５＠ｔ％添加すると温度係数−９００ＰＰ
Ｍ／ ’ＩＩ：以下となり、しかも誘電率は４００以上
と非常にすぐれた特性を示す、そして、焼成温度も低く
なるというすぐれた特徴をそなえている（試料隊３９〜
４１）、副成分としてさらにガラス成分０．５〜２．５
ｗｔ％添加すると、温度係数が低下し、Ｑ値は向上する
（資料−４６〜５０）。If 5i (ho ~ 3.0wt%, glass component 0 ~ 2.5@t% is added as a subcomponent), the temperature coefficient will be -900PP.
M/'II: Below, the dielectric constant is 400 or more, which shows very excellent properties, and the firing temperature is also low (Sample Group 39~
41), further glass component 0.5 to 2.5 as a subcomponent
When wt% is added, the temperature coefficient decreases and the Q value improves (References-46 to 50).
本発明の５ｒＴｉＯｓ−ＣａＴＩＯｓ−ＰｂＴｉＯｓ系
低誘電率磁器組成物によると、主成分として、５ｒＴｉ
Ｏｓ ４６．０〜６ ２．０ ｍａｔ ％、 ＣａＴ
ｌＯｓ ２ ６．０〜４ ８．Ｏｍｏｌ ％、ＰｂＴ
ｉ０３６． ０〜１２．０ｍｏｌ％に対して副成分とし
てＢｉｔ’ｓ Ｏ，５〜５．２０ｗｔ％、ＴＩｏ、０．
５〜２．８５ｗｔ％を添加することによって、従来の低
誘電率磁器組成物では得られなかった高い誘電率ε、と
＋２５〜８５℃の温度範囲において２５℃を基準とした
温度係数の小さい低誘電率磁器組成物が得られた。According to the 5rTiOs-CaTIOs-PbTiOs-based low dielectric constant ceramic composition of the present invention, 5rTiOs as a main component.
Os 46.0~62.0 mat%, CaT
lOs2 6.0~4 8. Omol%, PbT
i036. Bit's O, 5 to 5.20 wt%, TIo, 0.0 to 12.0 mol% as subcomponents.
By adding 5 to 2.85 wt%, a high dielectric constant ε that could not be obtained with conventional low dielectric constant porcelain compositions and a small temperature coefficient with respect to 25 °C in the temperature range of +25 to 85 °C can be achieved. A dielectric ceramic composition was obtained.
さらに、また、副成分としてＭｎＯ，Ｓｉｎｇ、ガラス
成分等を適正量添加することによって誘電率ε３、温度
係数の良好なものが得られ、なおかつ絶縁抵抗、誘電的
Ｑ値、焼成温度、焼結性等の良好なものが得られた。Furthermore, by adding appropriate amounts of MnO, Sing, glass components, etc. as subcomponents, it is possible to obtain a material with good dielectric constant ε3 and temperature coefficient, as well as insulation resistance, dielectric Q value, firing temperature, and sinterability. Good results were obtained.
Claims (3)
ａＴｉＯ＿３２６．０〜４８．０ｍｏｌ％、ＰｂＴｉＯ
＿３６．０〜１２．０ｍｏｌ％を主成分とし、これに対
し副成分としてＢｉ＿２Ｏ＿３０．５〜５．２０ｗｔ％
およびＴｉＯ＿２０．５〜２．８５ｗｔ％をそれぞれ添
加含有したことを特徴とするＳｒＴｉＯ＿３−ＣａＴｉ
Ｏ＿３ＰｂＴｉＯ＿３系低誘電率磁器組成物。(1) SrTiO_346.0-62.0 mol%, C
aTiO_326.0-48.0 mol%, PbTiO
The main component is 36.0 to 12.0 mol%, and the subcomponent is 30.5 to 5.20 wt% of Bi_2O.
and SrTiO_3-CaTi characterized by containing 20.5 to 2.85 wt% of TiO_3-CaTi
O_3PbTiO_3-based low dielectric constant ceramic composition.
ａＴｉＯ＿３３７．０〜４６．０ｍｏｌ％、ＰｂＴｉＯ
＿３６．５〜１０．０ｍｏｌ％を主成分とし、これに対
し副成分としてＢｉ＿２Ｏ＿３４．１〜５．２０ｗｔ％
、ＴｉＯ＿２１．１〜２．８５ｗｔ％およびＭｎＯ０〜
０．１０ｗｔ％をそれぞれ添加含有したことを特徴とす
るＳｒＴｉＯ＿３−ＣａＴｉＯ＿３−ＰｂＴｉＯ＿３系
低誘電率磁器組成物。(2) SrTiO_348.0-53.0 mol%, C
aTiO_337.0-46.0 mol%, PbTiO
The main component is _36.5 to 10.0 mol%, and the subcomponent is Bi_2O_34.1 to 5.20 wt%.
, TiO_21.1~2.85wt% and MnO~
A SrTiO_3-CaTiO_3-PbTiO_3-based low dielectric constant ceramic composition characterized by containing 0.10 wt% of each.
さらにガラス成分０．５〜２．５ｗｔ％またはＳｉＯ＿
２０〜３．０ｗｔ％およびガラス成分０〜２．５０ｗｔ
％添加含有したことを特徴とする特許請求の範囲第２項
記載の低誘電率磁器組成物。(3) In addition to the main component and the subcomponent, 0.5 to 2.5 wt% of glass component or SiO_
20-3.0wt% and glass component 0-2.50wt
% of the low dielectric constant ceramic composition according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223643A JPH0825793B2 (en) | 1986-09-24 | 1986-09-24 | Low dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223643A JPH0825793B2 (en) | 1986-09-24 | 1986-09-24 | Low dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6379754A true JPS6379754A (en) | 1988-04-09 |
| JPH0825793B2 JPH0825793B2 (en) | 1996-03-13 |
Family
ID=16801399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61223643A Expired - Fee Related JPH0825793B2 (en) | 1986-09-24 | 1986-09-24 | Low dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0825793B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329599A (en) * | 1976-08-30 | 1978-03-18 | Taiyo Yuden Kk | Dielectric ceramic composition |
| JPS5331280A (en) * | 1976-09-02 | 1978-03-24 | Iwao Miura | Drilling device for pipes |
-
1986
- 1986-09-24 JP JP61223643A patent/JPH0825793B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329599A (en) * | 1976-08-30 | 1978-03-18 | Taiyo Yuden Kk | Dielectric ceramic composition |
| JPS5331280A (en) * | 1976-09-02 | 1978-03-24 | Iwao Miura | Drilling device for pipes |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0825793B2 (en) | 1996-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |