JPS6379566U - - Google Patents

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Publication number
JPS6379566U
JPS6379566U JP17409686U JP17409686U JPS6379566U JP S6379566 U JPS6379566 U JP S6379566U JP 17409686 U JP17409686 U JP 17409686U JP 17409686 U JP17409686 U JP 17409686U JP S6379566 U JPS6379566 U JP S6379566U
Authority
JP
Japan
Prior art keywords
gate bias
pseudo
electrode
ion sensitive
comparison electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17409686U
Other languages
Japanese (ja)
Other versions
JPH0422293Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986174096U priority Critical patent/JPH0422293Y2/ja
Publication of JPS6379566U publication Critical patent/JPS6379566U/ja
Application granted granted Critical
Publication of JPH0422293Y2 publication Critical patent/JPH0422293Y2/ja
Expired legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例のバイオセンサの斜
視図、第２図イはそのＩＳＦＥＴの平面図、同図
ロ，ハはそれぞれそのＡ―Ａ断面図、Ｂ―Ｂ断面
図、第３図は他の実施例の斜視図、第４図は従来
のバイオセンサの斜視図、断面図である。 図中、２，１２はゲートバイアス用疑似比較電
極、２ｌ，１３ｂ，１４ｂ，１５ｂ，１６ｂはイ
オン感応部、５，１７は試料滴下窓部である。 FIG. 1 is a perspective view of a biosensor according to an embodiment of the present invention, FIG. The figure is a perspective view of another embodiment, and FIG. 4 is a perspective view and a sectional view of a conventional biosensor. In the figure, 2 and 12 are pseudo comparison electrodes for gate bias, 2l, 13b, 14b, 15b, and 16b are ion sensing parts, and 5 and 17 are sample dropping windows.

Claims (1)

【実用新案登録請求の範囲】 (1) 基板上にゲートバイアス用疑似比較電極と
イオン感応性電界効果型トランジスタのイオン感
応部を近接して設け、このイオン感応部とこれに
相対するゲートバイアス用疑似比較電極の少なく
とも近接する側縁部を除いた周辺を絶縁膜で被覆
した試料滴下窓部を有することを特徴とするバイ
オセンサ。 (2) 試料滴下窓部内に共通のゲートバイアス用
疑似比較電極とこれを取り巻く複数のイオン感応
部を有することを特徴とする実用新案登録請求の
範囲第１項記載のバイオセンサ。[Scope of Claim for Utility Model Registration] (1) A pseudo reference electrode for gate bias and an ion sensitive part of an ion sensitive field effect transistor are provided close to each other on a substrate, and this ion sensitive part and the opposite electrode for gate bias are provided. A biosensor comprising a sample dropping window in which the periphery of a pseudo comparison electrode except for at least adjacent side edges is covered with an insulating film. (2) The biosensor according to claim 1, which is characterized by having a common pseudo comparison electrode for gate bias and a plurality of ion sensing parts surrounding the common gate bias pseudo comparison electrode within the sample dropping window.
JP1986174096U 1986-11-14 1986-11-14 Expired JPH0422293Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986174096U JPH0422293Y2 (en) 1986-11-14 1986-11-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986174096U JPH0422293Y2 (en) 1986-11-14 1986-11-14

Publications (2)

Publication Number Publication Date
JPS6379566U true JPS6379566U (en) 1988-05-26
JPH0422293Y2 JPH0422293Y2 (en) 1992-05-21

Family

ID=31112175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986174096U Expired JPH0422293Y2 (en) 1986-11-14 1986-11-14

Country Status (1)

Country Link
JP (1) JPH0422293Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128250A (en) * 1986-11-18 1988-05-31 Shimadzu Corp Device for measuring concentration

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928647A (en) * 1982-08-09 1984-02-15 Mitsubishi Electric Corp Semiconductor sensor for liquid
JPS6056247A (en) * 1983-09-07 1985-04-01 Mitsubishi Electric Corp Insulation of semiconductor ion sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928647A (en) * 1982-08-09 1984-02-15 Mitsubishi Electric Corp Semiconductor sensor for liquid
JPS6056247A (en) * 1983-09-07 1985-04-01 Mitsubishi Electric Corp Insulation of semiconductor ion sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128250A (en) * 1986-11-18 1988-05-31 Shimadzu Corp Device for measuring concentration

Also Published As

Publication number Publication date
JPH0422293Y2 (en) 1992-05-21

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