JPS6378581A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6378581A JPS6378581A JP61220917A JP22091786A JPS6378581A JP S6378581 A JPS6378581 A JP S6378581A JP 61220917 A JP61220917 A JP 61220917A JP 22091786 A JP22091786 A JP 22091786A JP S6378581 A JPS6378581 A JP S6378581A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lower electrode
- tin
- semiconductor device
- titanium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000005546 reactive sputtering Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910010380 TiNi Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ａ−３ｉ：Ｉｆを用いた半導体装置において、Ａｌ電極
とａ−５ｉ：ＩＩ界面にバリア一層としてＴｉＮを用い
暗電流の増加を防止する。DETAILED DESCRIPTION OF THE INVENTION [Summary] In a semiconductor device using a-3i:If, an increase in dark current is prevented by using TiN as a barrier layer at the interface between an Al electrode and a-5i:II.
本発明は半４体’２１に関り、特にアルミニウム電極と
アモルファスシリコン（ａ−５ｉ：Ｈ）を用いたサンド
インチ型フォトダイオードに関する。The present invention relates to a half body '21, and particularly to a sandwich type photodiode using an aluminum electrode and amorphous silicon (a-5i:H).
（従来の技術と問題点〕
対向した２枚の電極板に高周波（１３，５６ＭＨｚ）電
力を印加しグロー放電を生起してモノシラン（ＳｉＨ４
）を分解して形成されるアモルファスシリコン（ａ−Ｓ
ｉ：Ｈ）はその両側に電極を形成してサンドインチ型光
ダイオードとして実用化されている。(Conventional technology and problems) High frequency (13, 56 MHz) power is applied to two electrode plates facing each other to generate glow discharge and monosilane (SiH4
) is formed by decomposing amorphous silicon (a-S
i:H) is put into practical use as a sandwich-type photodiode by forming electrodes on both sides thereof.
第２図は従来のダイオードの積層構造の一例を示す断面
図である。FIG. 2 is a sectional view showing an example of a conventional stacked structure of a diode.
： 第２図によればガラス基板１上に１μの厚さのＡｌ
下部電極２そしてその上にアモルファスシリコン（ａ−
５ｉ：Ｈ）層４が３００人の厚さの１層３ａ、５０００
人の厚さの１層３ｂ及び２００人の９層３Ｃから構成さ
れて形成されている。上記ａ−Ｓｉ：１１層４上には下
部電極として例えばＩ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ
０ｘｉｄｅ：酸化インジウム・酸化ズズ）電極６が形成
されている。: According to FIG. 2, a 1μ thick Al layer is placed on the glass substrate 1
Lower electrode 2 and amorphous silicon (a-
5i:H) 1 layer 3a with layer 4 300 people thick, 5000
It is formed of one layer 3b with the thickness of one person and nine layers 3C with the thickness of 200 people. On the a-Si:11 layer 4, for example, I To (Indium Tin) is used as a lower electrode.
Oxide: indium oxide/tin oxide) electrode 6 is formed.
第２図に示すようなＡｎ −（ａ−３ｉ）界面を有する
装置は動作時間が長くなるにつれて下部電極のＡｌがａ
−５ｉ：８層に拡散し本来の接合機能が劣化する。そ
のため動作中に逆方向電流（暗電流）が増加する。In a device having an An-(a-3i) interface as shown in Fig. 2, as the operating time increases, the Al of the lower electrode becomes a
-5i: Diffusion into 8 layers and the original bonding function deteriorates. Therefore, reverse current (dark current) increases during operation.
本発明はＡｌがａ−Ｓｉ：１１層内に拡散することを防
止した半導体装置を提供することを目的とする。An object of the present invention is to provide a semiconductor device in which diffusion of Al into the a-Si:11 layer is prevented.
上記問題点は本発明によればアモルファスシリコン（ａ
−５ｉ：ＩＩ） Ｎを中間層として上部電極及びアル
ミニウム下部電極を含んでなる半導体装置において、前
記アモルファスシリコン層とアルミニウム下部電極との
間に窒化チタン層を有することを特徴とする半導体装置
によって解決される。According to the present invention, the above problem can be solved by using amorphous silicon (a
-5i:II) Solved by a semiconductor device comprising an upper electrode and an aluminum lower electrode with N as an intermediate layer, characterized in that the semiconductor device has a titanium nitride layer between the amorphous silicon layer and the aluminum lower electrode. be done.
本発明によればＡｌとａ −５ｔ：Ｈとの間に形成され
たＴｉＮ層がＡｌのａ−５ｉ：ＩＩＪｇへの拡散バリア
として作用する。本発明に係るＴｉＮ層の厚さは５００
〜２０００人特に１０００人程度が好ましく例えばＡｒ
。According to the present invention, the TiN layer formed between Al and a-5t:H acts as a diffusion barrier for Al to a-5i:IIJg. The thickness of the TiN layer according to the present invention is 500
~2000 people, especially about 1000 people is preferable, for example, Ar
.
Ｎ２雰囲気中でＴｉをスパッタリングすることによって
容易に得ることが出来る。It can be easily obtained by sputtering Ti in an N2 atmosphere.
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図は本発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
第１図は従来例の第２図において、Ａｌ下部電極２とａ
−５ｉ：８層４との間に窒化チタン（ＴｉＮ） ７層が
設けられた構造を示している。FIG. 1 shows a conventional example shown in FIG. 2, with an Al lower electrode 2 and a
-5i: shows a structure in which 7 layers of titanium nitride (TiN) are provided between 8 layers and 4.
第１図において１μの厚さのＡＩ下部電極２上にＡｒと
Ｎ２１０％のン昆合スパッターガスを用いてＴｉをスパ
ッタし反応性スパッタリングによりＴｉＮをＡｌ下部電
極上に約１０００人の厚さに被着した。In Figure 1, Ti is sputtered onto an AI lower electrode 2 with a thickness of 1μ using a sputtering gas containing 10% Ar and N2, and TiN is sputtered onto an Al lower electrode 2 to a thickness of about 1000 μm by reactive sputtering. It was covered.
その後は従来法と同一の方法でａ−Ｓｔ：ｌ１層４及び
１７０層６形成した。Thereafter, a-St:l1 layer 4 and 170 layer 6 were formed using the same method as the conventional method.
このようにしてＴｉＮ Ｎを設けた本発明装置と、第２
図に示されたＴｉＮ ｉのない従来例についての逆方向
電流に関する信頼性試験を実施した。その結果を第３図
に示す。The device of the present invention provided with TiNN in this way and the second
A reliability test regarding reverse current was conducted for the conventional example shown in the figure without TiNi. The results are shown in FIG.
第３図に示すようにＡ７！単独の従来例に比しＡ７ｉ上
にＴｉＮを設けた本実施例の方が明らかに逆方向電流の
増加が少ないことがわかる。試験条件として２００℃の
加熱、５Ｖの逆バイアスを印加した。As shown in Figure 3, A7! It can be seen that the increase in the reverse current is clearly smaller in this example in which TiN is provided on A7i than in the conventional example in which the TiN layer is provided on A7i. The test conditions were heating at 200°C and applying a reverse bias of 5V.
以上説明したように本発明によれば、ｌがａ−５ｉ ：
ｌ１層に拡散せず使用中逆方向電流の増加を低く抑え
ることができる。As explained above, according to the present invention, l is a-5i:
It does not diffuse into the 11 layer, and the increase in reverse current during use can be suppressed to a low level.
第１図は本発明の一実施例を示す断面図であり、第２図
は従来のダイオードの積層構造の一例を示す断面図であ
り、第３図は本発明装置と従来例についての逆方向電流
に関する信顛性試験の結果を示すグラフである。
１・・・ガラス基板、 ２・・・、ｌ下部電極、
３ａ・・・ｎ層、 ３ｂ・・・ｉ層、３ ｃ
・＝ ｐ層、 ４− ａ −５ｉ：ｌ１層、
６・・・ＩＴＯ電極、 ７・・・ＴｉＮ層。
実施例
従来例
や２０
１・・・ ガラス基板
２・・・Ｍ下部電慨
４・・・ａ−５ｉ：Ｈ層
６・・・汀０電極
７・・・ＴｔＮ層FIG. 1 is a cross-sectional view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view showing an example of a conventional diode stack structure, and FIG. 3 is a cross-sectional view showing an example of a conventional diode stack structure. It is a graph showing the results of a reliability test regarding electric current. 1...Glass substrate, 2..., l lower electrode,
3a...n layer, 3b...i layer, 3c
・=p layer, 4-a-5i: l1 layer,
6...ITO electrode, 7...TiN layer. Examples and conventional examples 20 1... Glass substrate 2... M lower electrical conductor 4... a-5i: H layer 6... Bottom electrode 7... TtN layer
Claims (1)
中間層として上部電極（６）及びアルミニウム下部電極
（２）を含んでなる半導体装置において、前記アモルフ
ァスシリコン層（４）とアルミニウム下部電極（２）と
の間に窒化チタン層（７）を有することを特徴とする半
導体装置。1. In a semiconductor device comprising an upper electrode (6) and an aluminum lower electrode (2) with an amorphous silicon (a-Si; H) layer (4) as an intermediate layer, the amorphous silicon layer (4) and the aluminum lower electrode (2) A semiconductor device characterized by having a titanium nitride layer (7) between the semiconductor device and the titanium nitride layer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220917A JPS6378581A (en) | 1986-09-20 | 1986-09-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220917A JPS6378581A (en) | 1986-09-20 | 1986-09-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6378581A true JPS6378581A (en) | 1988-04-08 |
Family
ID=16758567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61220917A Pending JPS6378581A (en) | 1986-09-20 | 1986-09-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6378581A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354369A2 (en) * | 1988-08-12 | 1990-02-14 | Texas Instruments Incorporated | Infrared detector |
-
1986
- 1986-09-20 JP JP61220917A patent/JPS6378581A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354369A2 (en) * | 1988-08-12 | 1990-02-14 | Texas Instruments Incorporated | Infrared detector |
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