JPS6378547A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS6378547A JPS6378547A JP61222694A JP22269486A JPS6378547A JP S6378547 A JPS6378547 A JP S6378547A JP 61222694 A JP61222694 A JP 61222694A JP 22269486 A JP22269486 A JP 22269486A JP S6378547 A JPS6378547 A JP S6378547A
- Authority
- JP
- Japan
- Prior art keywords
- dicing
- wafer
- adhesive layer
- adhesives
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 36
- 230000001070 adhesive effect Effects 0.000 claims abstract description 35
- 239000012790 adhesive layer Substances 0.000 claims abstract description 24
- 239000008188 pellet Substances 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000002390 adhesive tape Substances 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
亘１」Ｊ■旧１分野
本発明は、半導体ウェハをダイシングソウにより細分化
してペレットを製造する半導体製造方法に関するもので
ある。Detailed Description of the Invention The present invention relates to a semiconductor manufacturing method in which pellets are manufactured by dividing a semiconductor wafer into pieces using a dicing saw.
１来夏肢丘
半導体製造工程で半導ウェハを切断して個々のペレット
に細分割する工程があり、その−具体例を第２図及び第
３図を参照して次に示す。1. In the semiconductor manufacturing process, there is a step of cutting a semiconductor wafer and dividing it into individual pellets, and a specific example thereof will be shown below with reference to FIGS. 2 and 3.
図において（１）は半導体ウェハ（以下、単にウェハと
称す。）、（２）は粘着シート、（３）は粘着シート（
２）に被着・形成された粘着層、（４）はダイシングソ
ウ（又はダイサと称す。）で、上記ウェハ（１）を粘着
シート（２）に貼り付けた後、ダイシングソウ（４）に
よってＸＹ方向に完全カット（スルーカット）してペレ
ット（ｌａ） （ｌａ）・−・に細分割し、その後、
各ペレット（１ａ）を粘着シート（２）より＃ 、ｉ！
ｔする、上記ダイシングソウ（４）によってウェハ（１
）を完全カットするには、ウェハ（１）の表面に垂直に
回転するブレード（４ａ）を押し付は粘着シート（２）
の一部まで切り込ませてウェハ（１）の表面に平行に移
動させる。この時、粘着層（３）には、従来、加圧によ
って所期の粘着力が得られる感圧接着剤を用いていたが
、ダイシング後はペレットの剥離が困難となる問題があ
ったため近年は紫外線硬化型粘着剤が用いられてきてい
る。上記紫外線硬化型粘着剤は紫外線照射によって照射
部分が硬化し、粘着力が低下するもので、上記ダイシン
グ終了後、粘着シート（２）側より紫外線を照射して粘
着層（３）の粘着力を弱くしてペレット剥離を容易にす
る。In the figure, (1) is a semiconductor wafer (hereinafter simply referred to as a wafer), (2) is an adhesive sheet, and (3) is an adhesive sheet (
The wafer (1) is pasted on the adhesive sheet (2) using a dicing saw (or referred to as a dicer), and then the adhesive layer (4) is adhered to and formed on the adhesive sheet (2). Completely cut (through cut) in the XY direction and finely divide into pellets (la) (la)..., then,
# of each pellet (1a) from the adhesive sheet (2), i!
The wafer (1) is cut by the dicing saw (4).
) To completely cut the wafer (1), press the rotating blade (4a) perpendicular to the surface of the wafer (1) using the adhesive sheet (2).
The wafer (1) is moved parallel to the surface of the wafer (1). At this time, the adhesive layer (3) used to be a pressure-sensitive adhesive that can obtain the desired adhesive strength by applying pressure, but in recent years there was a problem that it was difficult to peel off the pellets after dicing. Ultraviolet curing adhesives have been used. The irradiated portion of the UV-curable adhesive is cured by UV irradiation, and its adhesive strength decreases.After the dicing is completed, UV rays are irradiated from the adhesive sheet (2) side to increase the adhesive strength of the adhesive layer (3). It weakens it and makes it easier to peel off the pellet.
（”シ゛と るｌ 占
ところで、上述したウェハ（１）のダイシング時に粘着
層（３）はダイシングソウ（４）に対して大きな摩擦抵
抗となるためブレード（４ａ）の寿命が短くなってコス
ト高を招く、又、第４図に示すように、ブレード（４ａ
）の表面（４ａｘ ）に粘着剤が付着して切れ味が低下
すると共にペレット（１ａ）に対するダイシングソウ（
４）の摩擦が大きくなってダイシング中にペレット（１
ａ）がはじき飛ばされる。更にダイシング時は粘着層（
３）は未硬化状態で弾力性があるためブレード（４ａ）
の切り込みによってウェハ（１）に部分的に力が加わる
。そのため、ウェハ（１）は部分的変形と復元を繰り返
して部分的に微小振動しこの振動が繰り返されると、粘
着力が強くてもダイシング時にペレット（１ａ）が剥離
し易くなる。By the way, when dicing the wafer (1) mentioned above, the adhesive layer (3) creates a large frictional resistance against the dicing saw (4), which shortens the life of the blade (4a) and increases costs. Also, as shown in Figure 4, the blade (4a
) The adhesive adheres to the surface (4ax) of the pellet (1a), reducing its sharpness and the dicing saw (1a)
4) Due to increased friction, pellets (1
a) is repelled. Furthermore, when dicing, the adhesive layer (
3) is elastic in an uncured state, so the blade (4a)
A force is partially applied to the wafer (1) by the incision. Therefore, the wafer (1) repeatedly undergoes partial deformation and restoration, resulting in local minute vibrations, and when this vibration is repeated, the pellets (1a) tend to peel off during dicing even if the adhesive strength is strong.
口 占 ”るための
本発明は紫外線硬化型粘着層を形成した粘着シートに半
導体ウェハを貼り付け、該ウェハをダイシングソウにて
完全カントしペレットに細分割する半導体製造方法にお
いて、前記ダイシング作業に先立って上記粘着層に紫外
線を照射して硬化させるようにしたことを特徴とする。The present invention is a semiconductor manufacturing method in which a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the wafer is completely canted with a dicing saw and finely divided into pellets. The adhesive layer is characterized in that the adhesive layer is first irradiated with ultraviolet rays to be cured.
庄里
紫外線硬化型粘着層を有する粘着シートにウェハを貼り
付け、ダイシングに先立って上記粘着層を硬化させてお
くと、ダイシングソウに対する摩擦抵抗が減少し、かつ
、ダイシング時にウェハが微小振動しない。If a wafer is attached to an adhesive sheet having a Shori ultraviolet curable adhesive layer and the adhesive layer is cured prior to dicing, the frictional resistance against the dicing saw is reduced and the wafer does not vibrate minutely during dicing.
裏１医
本発明に係る半導体製造方法を第１図を参照し以下説明
する。第２図と同一参照符号は同一物を示す。図におい
て（１）はウェハ、（２）は粘着シート、（３）は粘着
シート（２）に被着・形成された紫外線硬化型粘着シー
トからなる粘着層、（４）はダイシングソウである。BACKGROUND OF THE INVENTION A semiconductor manufacturing method according to the present invention will be described below with reference to FIG. The same reference numerals as in FIG. 2 indicate the same parts. In the figure, (1) is a wafer, (2) is an adhesive sheet, (3) is an adhesive layer made of an ultraviolet curable adhesive sheet adhered to and formed on adhesive sheet (2), and (4) is a dicing saw.
上記構成においてウェハ（１）をダイシングソウ（４）
にて完全カットするに際しては、ダイシングに先立って
粘着シート（２）側より紫外線（５）を照射して紫外線
硬化型粘着剤からなる粘着層（３）を硬化させておく、
そうすると、粘着層（３）の粘着力は弱くなるが、硬化
しているためダイシング時にブレード（４ａ）がウェハ
（１）に切り込んでも、切り込みによる力はウェハ（１
）全面に加わる。そのため、ダイシング時にブレード（
４ａ）の切り込むによろウェハ（１）の微小変形がなく
なり、粘着層（３）の粘着力が弱くなってもダイシング
中にペレット（１ａ）は剥離しにくい、そして、上記粘
着力が弱くなるため粘着層（３）によるダイシングソウ
（４）の摩擦抵抗が小さくなってブレード（４ａ）の寿
命が長くなる。又、粘着層（３）は硬化していてダイシ
ング時に粘着剤がブレード（４）の表面（４ａ）に付着
しないためペレット（１ａ）に対するダイシングソウ（
４）の摩擦が小さくなってダイシング中にペレット（１
ａ）がはじき飛ばされない。In the above configuration, the wafer (1) is diced with a dicing saw (4).
When completely cutting, the adhesive layer (3) made of an ultraviolet curable adhesive is cured by irradiating ultraviolet rays (5) from the adhesive sheet (2) side prior to dicing.
In this case, the adhesive force of the adhesive layer (3) becomes weaker, but since it is hardened, even if the blade (4a) cuts into the wafer (1) during dicing, the force due to the cut will not be applied to the wafer (1).
) Participate fully. Therefore, when dicing, the blade (
By making the cut in step 4a), the wafer (1) is free from minute deformation, and even if the adhesive force of the adhesive layer (3) is weakened, the pellets (1a) are difficult to peel off during dicing, and the adhesive force is weakened. The frictional resistance of the dicing saw (4) due to the adhesive layer (3) is reduced, and the life of the blade (4a) is extended. In addition, since the adhesive layer (3) is hardened and the adhesive does not adhere to the surface (4a) of the blade (4) during dicing, the dicing saw (
4) The friction of pellets (1) is reduced during dicing.
a) is not repelled.
〕朋二立呈
本発明によれば、紫外線硬化型粘着層を形成した粘着シ
ートに半導体ウェハを貼り付けてダイシングに先立って
上記粘着剤に紫外線を照射して硬化させるようにしたか
ら、ダイシング中にペレットが剥離しにくり、又、ダイ
シングソウによってペレットがはじき飛ばされなくなっ
て歩留りが向上する。更に、ダイシングソウの寿命が長
くなってコスト低減化を図れる。[According to the present invention, a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the adhesive is cured by irradiating the adhesive with ultraviolet rays prior to dicing. The pellets are less likely to peel off, and the pellets are no longer thrown off by the dicing saw, improving yield. Furthermore, the life of the dicing saw is extended, and costs can be reduced.
第１図は本発明に係る半導体製造方法の一適用例を示す
ダイシング時の半導体ウェハの側断面図、第２図と第３
図は従来の半導体製造方法によって製造されるダイシン
グ時の半導体ウェハのＸＹ方向から見た各側断面図、第
４図はダイシング中の半導体ウェハの部分側断面図であ
る。
（１） −・半導体ウェハ、（ｌａ）・−ペレット、（
２） −粘着シート、 （３）−・−粘着層、（４）
−ダイシングソウ、（５） −紫外線。
第３図FIG. 1 is a side sectional view of a semiconductor wafer during dicing, showing an application example of the semiconductor manufacturing method according to the present invention, and FIGS.
The figures are side cross-sectional views of a semiconductor wafer manufactured by a conventional semiconductor manufacturing method during dicing as viewed from the X and Y directions, and FIG. 4 is a partial side cross-sectional view of the semiconductor wafer during dicing. (1) -・Semiconductor wafer, (la)・-pellet, (
2) -adhesive sheet, (3)--adhesive layer, (4)
- Dicing saw, (5) - Ultraviolet light. Figure 3
Claims (1)
体ウェハを貼り付け、該ウェハをダイシングソウにて完
全カットしペレットに細分割する半導体製造方法におい
て、前記ダイシング作業に先立って上記粘着層に紫外線
を照射して硬化させるようにしたことを特徴とする半導
体製造方法。(1) In a semiconductor manufacturing method in which a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the wafer is completely cut with a dicing saw and finely divided into pellets, the adhesive layer is applied to the adhesive layer prior to the dicing operation. A semiconductor manufacturing method characterized by curing by irradiating ultraviolet rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61222694A JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61222694A JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6378547A true JPS6378547A (en) | 1988-04-08 |
| JPH0319704B2 JPH0319704B2 (en) | 1991-03-15 |
Family
ID=16786451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61222694A Granted JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6378547A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332269A (en) * | 2002-05-15 | 2003-11-21 | Renesas Technology Corp | Method of manufacturing semiconductor device |
-
1986
- 1986-09-20 JP JP61222694A patent/JPS6378547A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332269A (en) * | 2002-05-15 | 2003-11-21 | Renesas Technology Corp | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319704B2 (en) | 1991-03-15 |
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