JPS6369763A - Aluminum nitride substrate and manufacture - Google Patents
Aluminum nitride substrate and manufactureInfo
- Publication number
- JPS6369763A JPS6369763A JP61213987A JP21398786A JPS6369763A JP S6369763 A JPS6369763 A JP S6369763A JP 61213987 A JP61213987 A JP 61213987A JP 21398786 A JP21398786 A JP 21398786A JP S6369763 A JPS6369763 A JP S6369763A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- substrate
- ain
- nitride substrate
- crystal grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は窒化アルミニウム（Ａ Ｉ Ｎ）基板とその製
造方法に関し、更に詳しくは、該基板の板面内の各個所
で測定した抗折強度のバラツキが小さいので設計信頼性
の高いＡｕＮ基板とその製造方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to an aluminum nitride (AIN) substrate and a method for manufacturing the same. The present invention relates to an AuN substrate with high design reliability due to small variations in measured bending strength, and a method for manufacturing the same.
（従来の技術）
ＡｆｌＮは電気絶縁性であると同時に熱放散性に優れた
セラミックスであり、半導体の基板や単結晶引上げ用炉
部材などに広く使用されはじめている。(Prior Art) AflN is a ceramic having excellent heat dissipation properties as well as electrical insulation properties, and is beginning to be widely used for semiconductor substrates, single crystal pulling furnace members, and the like.
このＡ文Ｎ基板は例えば次のようにして製造されている
。すなわち、まずＡＩＮ粉と焼結助剤である例えばＹ２
Ｏ３粉とを所定量混合し、得られた混合粉をバインダー
でスラリー化し、ドクターブレード装置を用いて、グリ
ーンシートに成形し、脱脂後、例えば窒素雰囲気中で焼
結する。This A pattern N board is manufactured, for example, as follows. That is, first, AIN powder and a sintering aid such as Y2
A predetermined amount of O3 powder is mixed, and the obtained mixed powder is slurried with a binder, formed into a green sheet using a doctor blade device, degreased, and then sintered in, for example, a nitrogen atmosphere.
その後、この焼結板を、例えば、ホーニング処理して表
面に付着している焼成時の詰粉や表面のわずかな凹凸な
どを削除する。このときの表面の削除量は、厚みにして
通常２〜３−程度である。Thereafter, this sintered plate is subjected to, for example, a honing treatment to remove any particles during firing or slight irregularities on the surface that have adhered to the surface. The amount of surface removal at this time is usually about 2 to 3 times the thickness.
得られたＡｕＮ基板は表面が平滑になり、それが実用に
供される。The obtained AuN substrate has a smooth surface and is put to practical use.
（発明が解決しようとする問題点）
ところが、従来から知られているＡＩＮ基板においては
、その板面内における抗折強度（σｆ）のバラツキが天
さという問題がある。すなわち、概略、（ｒｆは１０〜
４０Ｋｇ／ｍｍ２であることが通例である。このように
、抗折強度がバラつくということは、この基板を各種の
用途素材として使用する場合の強度設計をはなはだ困難
たらしめる。とくに抗折強度がその下限値近辺でバラつ
くということは、強度設計時におけるＡＫＬＮ基板の信
頼性を著しく低下させる。(Problems to be Solved by the Invention) However, conventionally known AIN substrates have a problem in that the bending strength (σf) varies widely within the plane of the plate. That is, roughly (rf is 10~
It is customary to be 40Kg/mm2. This variation in bending strength makes it extremely difficult to design the strength when using this substrate as a material for various purposes. In particular, the fact that the bending strength varies around its lower limit significantly reduces the reliability of the AKLN substrate during strength design.
本発明は、このような問題が解決された、とくに下限値
それ自体も高くしかもバラツキの幅が狭いので、強度設
計における信頼性が向上したＡＩＮ基板とその製造方法
の提供を目的とする。The object of the present invention is to provide an AIN board and a method for manufacturing the same, in which such problems are solved, and in particular, the lower limit value itself is high and the range of variation is narrow, so reliability in strength design is improved.
（問題点を解決するための手段・作用）本発明者らは上
記問題点を解決すべく、各種のＡＵＮ基板の組織と製造
方法に検討を加えた。(Means and effects for solving the problems) In order to solve the above problems, the present inventors have studied the structures and manufacturing methods of various AUN substrates.
その結果、従来のＡＩＮ基板はいずれも、基板の表面部
には厚み５〜１０．に亘って異常に粒成長したＡＭＮの
結晶粒が集中的に存在し、中心部には比較的小粒径でか
つ粒径の揃ったＡ、ＱＮ結晶粒が存在しているという事
実を見出した。そしてまた、この異常成長したＡＩＮ結
晶粒の周辺にはイットリウム・アルミニウム・ガーネッ
ト（ＹＡｉ型結高結晶基板の中心部の場合に比べて多量
に存在している事実を見出した。As a result, all conventional AIN boards have a thickness of 5 to 10 mm on the surface of the board. It was discovered that AMN crystal grains with abnormal grain growth exist in a concentrated manner throughout the area, and in the center there are A and QN crystal grains with relatively small grain sizes and uniform grain sizes. . It was also discovered that yttrium aluminum garnet (yttrium aluminum garnet) exists in a larger amount around the abnormally grown AIN crystal grains than in the center of the YAi crystalline substrate.
そこで木発明者らは、この異常成長したＡｆＬＮ結晶粒
の存在が基板内における抗折強度のバラツキを誘発する
原因ではないかとの着想を抱き、基板表面部を所定の厚
み削除して上記した異常成長のＡＪＩＮ結晶粒を除去し
たところ、抗折強度のバラツキは小さくなり、しかも抗
折強度の下限値も上昇するとの事実を見出して本発明の
Ａ、Ｑ−Ｎ基板とその製造方法を開発するに到った。Therefore, the inventors had the idea that the existence of these abnormally grown AfLN crystal grains might be the cause of the variation in the bending strength within the substrate, and removed the substrate surface by a predetermined thickness to cause the above-mentioned abnormality. We discovered that when the growing AJIN crystal grains were removed, the variation in flexural strength became smaller, and the lower limit of flexural strength also increased, and we developed the A, Q-N substrate of the present invention and its manufacturing method. reached.
すなわち、本発明のＡ立Ｎ基板は、ＹＡＧ型結晶に基づ
くＸ線回折強度（Ｉ ＹＡＧ ）とＡＩＮ結晶に基づく
ｘ！Ｊ１回折強度（ＩＡＩＨ）、！＝の比（Ｉ ＹＡＧ
／ＩＡ４Ｎ）が、表面部では０．０５以下であることを
特徴とし、その製造方法は、Ａ文Ｎ焼結板の表面を厚み
１０〜５０％削除することを特徴とする。That is, the A vertical N substrate of the present invention has an X-ray diffraction intensity (I YAG ) based on the YAG type crystal and x! based on the AIN crystal. J1 diffraction intensity (IAIH),! = ratio (I YAG
/IA4N) is 0.05 or less at the surface portion, and the manufacturing method thereof is characterized by removing 10 to 50% of the thickness of the surface of the A pattern N sintered plate.
まず、本発明のＡ立Ｎ基板は、その表面部でＩ ＹＡＧ
／ Ｉ Ａ！ｌＮが０．０５以下である。このことは
、表面部におけるＹＡＧ結晶が少ない、すなわち、前述
したようにＹＡＧが′まつわりついている″異常成長し
たＡ文Ｎ結晶粒の存在量が少ないということを定量的に
示すものである。別言すれば、表面部に存在するＡｆＬ
Ｎ結晶粒はその粒径が比較的小さくしかも揃っており、
更に粒間結合部にはＹＡＧの介在量が少なく直接的な粒
間結合であるため結合力も強いということを意味する。First, the A vertical N substrate of the present invention has an I YAG
/ IA! lN is 0.05 or less. This quantitatively indicates that there are few YAG crystals in the surface area, that is, there is a small amount of abnormally grown A-N crystal grains in which YAG is ``surrounded'' as described above. In other words, AfL present on the surface
The grain size of N crystal grains is relatively small and uniform,
Furthermore, since the amount of YAG intervening in the intergranular bonding portion is small and the intergranular bonding is direct, it means that the bonding force is strong.
このＩＹＡＧ／ＩＡｌＮが０．０５より大きくなるとい
うことは、まさに上記したと逆の状態に表面部がなって
いる、つまり、異常成長したＡＩＮ結晶粒の存在量が多
い状態であることを意味し、抗折強度のバラツキを低減
せしめるためには不適である。If this IYAG/IAlN is larger than 0.05, it means that the surface area is in the opposite state to that described above, that is, there is a large amount of abnormally grown AIN crystal grains. , is unsuitable for reducing variations in transverse strength.
本発明のＡＩＮ基板は次のようにして製造することがで
きる。すなわち、まず従来と同様な方法でＡｉＮ焼結板
を製造する。The AIN substrate of the present invention can be manufactured as follows. That is, first, an AiN sintered plate is manufactured by a method similar to the conventional method.
その後、この焼結板の表面を厚み１０〜５０μｓに亘っ
て削除するのである。削除の方法は従来の場合と同様に
ホーニング処理でよく、更には、ラッピングなどの方法
を適用してもよい。Thereafter, the surface of this sintered plate is removed over a thickness of 10 to 50 μs. The deletion method may be honing processing as in the conventional case, and further methods such as wrapping may be applied.
削除する厚みは、表面部の異常成長したＡＩＮ結晶粒を
除去し得るに足る厚みであることが必要で、焼結板の製
造方法によっても異なるが異常成長したＡｆＬＮ結晶粒
の存在する厚みは通常５〜Ｌｏｐであるので、削除の厚
みは１０ｐ１以上とする。しかし、あまり多量に削除し
ても、徒らに削除しなくてもよいＡＩＮ結晶粒を無駄に
除去することになるので、削除量は最大でも５０．以下
とする。好ましくは１０〜２０戸である。The thickness to be removed needs to be thick enough to remove the abnormally grown AIN crystal grains on the surface, and although it varies depending on the manufacturing method of the sintered plate, the thickness where the abnormally grown AfLN crystal grains exist is usually 5 to Lop, the thickness of deletion is 10p1 or more. However, if too much is removed, AIN crystal grains that do not need to be removed will be wasted, so the maximum amount to be removed is 50. The following shall apply. Preferably it is 10 to 20 houses.
（発明の実施例）
平均粒径１．５戸のＡｕＮ粉９７重量部と平均粒径０．
８．のＹ２Ｏ３粉３重量部とをボールミルにいれて充分
混合・粉砕したのち、バインダとしてアクリル樹脂を適
量添加しドクターブレードによりシート成形をし、成形
板を製造した。(Embodiment of the invention) 97 parts by weight of AuN powder with an average particle size of 1.5 mm and an average particle size of 0.
8. 3 parts by weight of Y2O3 powder were placed in a ball mill, thoroughly mixed and pulverized, an appropriate amount of acrylic resin was added as a binder, and a sheet was formed using a doctor blade to produce a molded plate.
この成形板から縦７５ｍｍ横３５ｍｍの基板前駆体を打
抜き加工し、これらを７００ ’０で脱脂したのち、窒
素雰囲気炉内において温度１７７０℃、時間２時間で焼
結した。A substrate precursor having a length of 75 mm and a width of 35 mm was punched from this molded plate, and after degreasing at 700'0, sintering was performed at a temperature of 1770° C. for 2 hours in a nitrogen atmosphere furnace.
得られた焼結板をホーニング処理して、表面部を２戸、
７戸、１５ｐＪＲ，３０戸削除して４種類の基板を製造
した。The obtained sintered plate was honed to give two surface areas,
Four types of boards were manufactured by removing 7 units, 15pJR, and 30 units.
得られた４種類の基板につき、その表面部におけるＩＹ
ＡＧ、ＩＡ立Ｎを測定し、Ｉ ＹＡＧ ／ Ｉ Ａ文Ｎ
を算出した。また、各基板の面内の中心個所における抗
折強度を測定し、その最大値と最小値を表に示した。For the four types of substrates obtained, IY on the surface area
Measure AG, IA standing N, I YAG / I A sentence N
was calculated. In addition, the bending strength at the in-plane center of each substrate was measured, and the maximum and minimum values are shown in the table.
［発明の効果］
以上の説明で明らかなように、本発明のＡＩＮ基板は、
板面内における抗折強度のバラツキが従来のものに比べ
て小さく、強度設計における信頼性が極めて高い。また
、その製造方法は従来方法と基本的には変らず表面部の
削除量を変えるだけであるから新たな設備投資も不要で
あり、その工業的な価値は大である。[Effects of the Invention] As is clear from the above explanation, the AIN board of the present invention has the following effects:
The variation in bending strength within the plate plane is smaller than that of conventional products, and the reliability in strength design is extremely high. In addition, since the manufacturing method is basically the same as the conventional method, only changing the amount of surface portion removed, no new equipment investment is required, and its industrial value is great.
Claims (1)
基づくＸ線回折強度（Ｉ＿Ｙ＿Ａ＿Ｇ）と窒化アルミニ
ウム結晶に基づくＸ線回折強度（Ｉ＿Ａ＿ｌ＿Ｎ）との
比（Ｉ＿Ｙ＿Ａ＿Ｇ／Ｉ＿Ａ＿ｌ＿Ｎ）が、表面部では
０．０５以下であることを特徴とする窒化アルミニウム
基板。 ２、窒化アルミニウム焼結板の表面を厚み１０〜５０μ
ｍ削除することを特徴とする窒化アルミニウム基板の製
造方法。[Claims] 1. The ratio (I_Y_A_G/I_A_l_N) between the X-ray diffraction intensity (I_Y_A_G) based on the yttrium aluminum garnet type crystal and the X-ray diffraction intensity (I_A_l_N) based on the aluminum nitride crystal is An aluminum nitride substrate characterized in that it has a particle diameter of 0.05 or less. 2. The surface of the aluminum nitride sintered plate has a thickness of 10 to 50 μm.
A method for manufacturing an aluminum nitride substrate, characterized in that m is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213987A JPS6369763A (en) | 1986-09-12 | 1986-09-12 | Aluminum nitride substrate and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213987A JPS6369763A (en) | 1986-09-12 | 1986-09-12 | Aluminum nitride substrate and manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6369763A true JPS6369763A (en) | 1988-03-29 |
| JPH0427184B2 JPH0427184B2 (en) | 1992-05-11 |
Family
ID=16648374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61213987A Granted JPS6369763A (en) | 1986-09-12 | 1986-09-12 | Aluminum nitride substrate and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6369763A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04290462A (en) * | 1991-03-19 | 1992-10-15 | Hitachi Ltd | Metal junction circuit substrate and electronic device using same |
-
1986
- 1986-09-12 JP JP61213987A patent/JPS6369763A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04290462A (en) * | 1991-03-19 | 1992-10-15 | Hitachi Ltd | Metal junction circuit substrate and electronic device using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0427184B2 (en) | 1992-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |