JPS6369227A - Pressure controlling method and device in etching equipment - Google Patents

Pressure controlling method and device in etching equipment

Info

Publication number
JPS6369227A
JPS6369227A JP21163386A JP21163386A JPS6369227A JP S6369227 A JPS6369227 A JP S6369227A JP 21163386 A JP21163386 A JP 21163386A JP 21163386 A JP21163386 A JP 21163386A JP S6369227 A JPS6369227 A JP S6369227A
Authority
JP
Japan
Prior art keywords
pressure
vacuum
container
vacuum container
variable valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21163386A
Other languages
Japanese (ja)
Other versions
JPH0812855B2 (en
Inventor
Koji Nishihata
西畑 廣治
Keiji Tada
多田 啓司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61211633A priority Critical patent/JPH0812855B2/en
Publication of JPS6369227A publication Critical patent/JPS6369227A/en
Publication of JPH0812855B2 publication Critical patent/JPH0812855B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To maintain a process pressure inside a vacuum chamber in a plasma discharging operation so as to be a definite one, by starting discharge when the pressure inside the vacuum container attains within the range of an etching process pressure and measuring the pressure inside the vacuum container after the discharge and performing a PID control of a variable valve. CONSTITUTION:A variable valve 7 and a valve 10 are opened and a vacuum pump 11 is operated to perform vacuum exhaustion inside a vacuum container 1. When the pressure inside the container 1 attains to a definite pressure, valves 2 and 5 are opened and a flow rate controller 3 is controlled to supply a proper quantity of process gas into the container 1 from a process gas supplying source. Discharge is generated inside the container 1 by the use of a high-frequency power source 13. The pressure inside the container 1 is made feedback and PID control is performed inside a controller 15 to adjust an opening degree of a valve 7. If the pressure inside the container 1 is in the allowable range, the opening degree of the valve 7 is memorized. Hence, the process pressure inside the container 1 is maintained to be a definite one.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はエツチング装置の圧力制御方法および装置に係
り、特にプラズマを利用して処理するのに好適なエツチ
ング装置の圧力制御方法および装置に関するものである
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a pressure control method and apparatus for an etching apparatus, and more particularly to a pressure control method and apparatus for an etching apparatus suitable for processing using plasma. It is.

〔従来の技術〕[Conventional technology]

従来の圧力制御方法は、特開昭61−54627号に記
載のように、所定圧力に減圧排気された真空容器内へ処
理ガスを導入し、導入された処理ガスをプラズマ放電さ
せるとき、プラズマ放電開始時の圧力上昇分を見込んで
、所定の処理圧力よす低目の圧力でプラズマ放電を開始
し、上昇した圧力がだいたい処理圧力になるようにして
、真空容器内の処理圧力を調整し、所定圧力減圧排気さ
れた真空容器内への処理ガスの導入開始から放電開始ま
でに要する時間を短縮し、スループットを向上するもの
であった。
In the conventional pressure control method, as described in Japanese Patent Application Laid-Open No. 61-54627, a processing gas is introduced into a vacuum chamber that is evacuated to a predetermined pressure, and when the introduced processing gas is caused to discharge into plasma, the plasma discharge Taking into account the pressure increase at the start, plasma discharge is started at a lower pressure than the predetermined processing pressure, and the processing pressure in the vacuum vessel is adjusted so that the increased pressure is approximately the processing pressure. The time required from the start of introduction of a processing gas into a vacuum vessel evacuated to a predetermined pressure until the start of discharge is shortened, thereby improving throughput.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記の従来技術は、所定の処理圧力に速やかに圧力を収
束制御する点について配慮がされておらず、処理ガスを
プラズマ放電させたときに上昇した圧力が、はぼ所定の
処理圧力に等しくなっているので、所定の処理圧力との
差が小さく、圧力をフィードバック制御するのに収束さ
せ醤こくいという問題があった。
The above-mentioned conventional technology does not take into consideration the point of controlling the pressure to quickly converge to a predetermined processing pressure, and the pressure that rises when the processing gas is plasma discharged is almost equal to the predetermined processing pressure. Therefore, there is a problem that the difference from the predetermined processing pressure is small, and it is difficult to converge the pressure for feedback control.

本発明の目的は、プラズマ放電中の真空室内の処理圧力
を速やかに所定圧力に維持することのできるエツチング
装置の圧力制御方法および装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a pressure control method and apparatus for an etching apparatus that can quickly maintain the processing pressure in a vacuum chamber at a predetermined pressure during plasma discharge.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、真空容器内でプラズマを利用して試料をエ
ツチング圧力するエツチング装置の圧力制御装置におい
て、真空容器に接続された排気系のバルブおよび真空ポ
ンプと、真空容器に接続された処理ガス供給系のバルブ
とに作動信号を送るテ゛イジタル出力手段と、排気系の
可変バルブの開度を調整するイM号を送るパルス出力手
段と、真空容器に設けた真空計により測定した圧力値を
入力するアナログ入力手段と、処理ガス供給系の流量制
御器の流量を調整する信号と真空容器に接続された高周
波電源を作動させる信号とを送るアナログ出力手段と、
前回のエツチング処理終了前の可変バルブの開度を記憶
する記憶手段と、圧力調整手順を記憶した圧力制御手順
記憶手段と、これら入出力手段および記憶手段を制御す
る中央演算処理装置とを有し、真空容器内の圧力が所定
圧力に減圧排気された時点で、真空容器内へ処理ガスを
供給し、所定のエツチング処理圧力に達した時点で、可
変バルブを前回のエツチング処理終了前の開度を基準に
初期開度を設定して合わせ、真空容器内で放電を開始し
、可変バルブなPID制御して放電後の真空容器内の圧
力を所定のエッチング圧力に調整することによって達成
される。
The above purpose is to control the pressure control device of an etching apparatus that uses plasma to etch a sample in a vacuum chamber, and to control the exhaust system valve and vacuum pump connected to the vacuum chamber, and the processing gas supply connected to the vacuum chamber. A digital output means sends an operating signal to the valves in the system, a pulse output means sends an M signal to adjust the opening of the variable valve in the exhaust system, and a pressure value measured by a vacuum gauge installed in the vacuum vessel is input. an analog input means, an analog output means for sending a signal for adjusting the flow rate of a flow rate controller of the processing gas supply system and a signal for activating a high frequency power source connected to the vacuum container;
It has a storage means for storing the opening degree of the variable valve before the end of the previous etching process, a pressure control procedure storage means for storing the pressure adjustment procedure, and a central processing unit for controlling these input/output means and the storage means. When the pressure inside the vacuum container is reduced to a predetermined pressure, the processing gas is supplied into the vacuum container, and when the predetermined etching processing pressure is reached, the variable valve is adjusted to the opening position before the end of the previous etching processing. This is achieved by setting and matching the initial opening degree based on , starting discharge within the vacuum chamber, and adjusting the pressure within the vacuum chamber after discharge to a predetermined etching pressure by controlling PID using a variable valve.

〔作  用) 圧力制御手順記憶手段に記tコした圧力1凋整手段に従
い、中央演算処理袋r″′C集中コントロールをして、
真空容器内の圧力値をアナログ入力手段に入力するとと
もに、ディジタル出力手段から真空ポンプおよび排気系
のバルブに信号を送り、真空容器内の圧力が所定圧力6
二減圧排気された時点で、ディジタル出力手段およびア
ナログ出力手段から処理ガス供給系のバルブおよび流址
制御弁に信号を送り、真空容器内へ処理ガスを供給し、
所定のエツチング処理圧力に達した時点で、パルス出力
出段から排気系の可変バルブを調整する信号先送り、可
変バルブを111回のエツチング処理終了前の開度に合
わせ、アナログ出力手段から高周波電源を作動させる信
号を送り、真空容器内で放電を開始し、パルス出力手段
から可変バルブの調整信号を送り、可変バルブを1) 
I D制御して放電後の真空容器内の圧力を所定のエツ
チング圧力に調整することで、プラズマ放電中の真空室
内の処理圧力を4やかに所定圧力に維持することができ
る。
[Function] In accordance with the pressure control means recorded in the pressure control procedure storage means, the central processing bag r'''C is centrally controlled,
The pressure value inside the vacuum container is input to the analog input means, and a signal is sent from the digital output means to the vacuum pump and the valve of the exhaust system, so that the pressure inside the vacuum container reaches a predetermined pressure 6.
When the pressure has been evacuated, signals are sent from the digital output means and the analog output means to the valves and flow control valves of the processing gas supply system to supply the processing gas into the vacuum vessel,
When the predetermined etching process pressure is reached, a signal to adjust the variable valve in the exhaust system is sent from the pulse output stage, the variable valve is adjusted to the opening degree before the end of the 111th etching process, and a high frequency power source is applied from the analog output means. Send a signal to operate, start discharge in the vacuum container, send an adjustment signal for the variable valve from the pulse output means, and adjust the variable valve 1)
By controlling the pressure in the vacuum chamber after discharge to a predetermined etching pressure through ID control, the processing pressure in the vacuum chamber during plasma discharge can be easily maintained at a predetermined pressure.

〔実 施 例〕〔Example〕

以下、本発明の一実旌例を第1図から第3因により説明
する。
Hereinafter, a practical example of the present invention will be explained from FIG. 1 to the third factor.

第1図に圧力制御装置のブロック図を示す。真空容器1
の一方には、バルブ2.流量制御器3゜バルブ5を順次
介して処理ガス供給源6が接続してあり、他方には、可
変バルブ7、バルブ10を介して真空ポシプ11が接続
してある。また、真空容器lには真空計12が取り付け
られ、高周波電源が接続しである。
FIG. 1 shows a block diagram of the pressure control device. Vacuum container 1
On one side is valve 2. A processing gas supply source 6 is connected to the flow rate controller through a 3° valve 5 in this order, and a vacuum pump 11 is connected to the other side through a variable valve 7 and a valve 10. Further, a vacuum gauge 12 is attached to the vacuum vessel 1, and a high frequency power source is connected thereto.

また、制御装置15は、中央演算処理袋Wt16にアナ
ログ出力手段18.アナログ入力手段19.パルス出力
手段蜀およびディジタル出力手段ムから成る入出力装置
17と、圧力制御手順記憶手段田および記憶手段シから
成る記憶装置nとが接続して成る。
The control device 15 also sends an analog output means 18 to the central processing bag Wt16. Analog input means 19. An input/output device 17 consisting of a pulse output means (S) and a digital output means (M) is connected to a storage device (N) consisting of a pressure control procedure storage means (T) and a storage means (S).

アナログ出力手段18は、lt量副制御器コントローラ
4ケ介て流M制御器3と、高周波電源コントローラ14
を介して扁周波’屯@ 13とにつながり、中央演算処
理装置16の指令信号をアナログ信号に変換して、流量
制御器コントローラ4または高周波電源コントローラ1
4に信号を送り、流量制御器3または高周波電源13を
作動、制御する。
The analog output means 18 is connected to the flow M controller 3 through four LT quantity sub-controllers, and the high frequency power supply controller 14.
is connected to the high-frequency power supply controller 13 through the converter, which converts the command signal of the central processing unit 16 into an analog signal and sends it to the flow rate controller 4 or the high-frequency power controller 1.
4 to operate and control the flow rate controller 3 or the high frequency power source 13.

アナログ入力手段19は真空計12に継ながり、真空計
12で検出したアナログ量をディジタル量に変換するも
ので、例えばアナログ入力ボードである。
The analog input means 19 is connected to the vacuum gauge 12 and converts the analog quantity detected by the vacuum gauge 12 into a digital quantity, and is, for example, an analog input board.

パルス出力手段加は、圧力制御弁コントローラ9を介し
パルスモータ8につながり、パルスモータ8は可変バル
ブ7に連結される。中央fi4′u処理装置1R16の
指令信号なパルス信号に変換して、圧力制御弁コントロ
ーラ9Iこ送り、圧力制御弁コントローラ9によってパ
ルスモータ8を駆動、制御して、可変バルブ7の調整を
行なう。
The pulse output means is connected to a pulse motor 8 via a pressure control valve controller 9, and the pulse motor 8 is connected to a variable valve 7. The command signal of the central fi4'u processor 1R16 is converted into a pulse signal and sent to the pressure control valve controller 9I, which drives and controls the pulse motor 8 to adjust the variable valve 7.

テ゛イジタル出力手段4は、処理ガス供給系のバルブ2
.バルブ5と排気系のバルブ10と真空ポンプ11とに
それぞれ接続され、中央演算処理装置16の指令信号な
テ゛イジタル信号に変換して、バルブ2、バルブ5.バ
ルブ10または真空ポンプ11にそれぞれ信号を送り作
動させる。
The digital output means 4 is a valve 2 of the processing gas supply system.
.. It is connected to the valve 5, the exhaust system valve 10, and the vacuum pump 11, respectively, and converts it into a digital signal such as a command signal for the central processing unit 16, and sends the valve 2, valve 5, . A signal is sent to the valve 10 or the vacuum pump 11 to operate the valve 10 or the vacuum pump 11, respectively.

圧力制御手順記憶手段久は、真空容器1内の圧力を所定
の圧力に制御する手順を記憶させたもので、例えばRO
M (Read 0nly Memory ) テ3)
 ル。
The pressure control procedure storage means stores a procedure for controlling the pressure inside the vacuum container 1 to a predetermined pressure, for example, RO.
M (Read 0nly Memory) Te3)
Le.

記憶手段冴は、前回の圧力制御時に真空容器i内が所定
の処理圧力に保持されている時の可変バルブの開度を記
憶しておくもので、例えば、RAM (Randam 
Access Memorry )である。
The storage means sae stores the opening degree of the variable valve when the inside of the vacuum container i is maintained at a predetermined processing pressure during the previous pressure control.
Access Memory).

上記構成により、圧力制御手順記憶手段りに記憶された
手順に従い動作を説明する。手順を第2図に示し、圧力
状態を第3図に示す。
With the above configuration, the operation will be explained according to the procedure stored in the pressure control procedure storage means. The procedure is shown in Fig. 2, and the pressure state is shown in Fig. 3.

まず、可変バルブ7およびバルブlOを開き、真空ポン
プ11を作動させて真空容器l内を真空排気する(これ
をステップ31に示す。)。
First, the variable valve 7 and the valve IO are opened, and the vacuum pump 11 is operated to evacuate the inside of the vacuum container 1 (this is shown in step 31).

次に、真空容器l内の圧力が所定の圧力Po(第3図<
a>に示すA点)に達したら、バルブ2およびバルブ5
を開き、流量制御器3を制御して処理ガス供給源から適
量の処理ガスを真空容器l内へ供給する(これをステッ
プ32に示す。)。
Next, the pressure inside the vacuum container l is set to a predetermined pressure Po (Fig. 3<
When reaching point A) shown in a>, valve 2 and valve 5 are
is opened, and the flow rate controller 3 is controlled to supply an appropriate amount of processing gas from the processing gas supply source into the vacuum vessel 1 (this is shown in step 32).

次に、処理ガスが供給される真空容器l内の圧力が所定
のエツチング処理圧力Plの許容圧力範囲△P内に達し
たかどうかを斜断する(これをステップ33に示す。)
Next, it is determined whether the pressure within the vacuum vessel l to which the processing gas is supplied has reached the allowable pressure range ΔP of the predetermined etching processing pressure Pl (this is shown in step 33).
.

次に、真空容器i内の圧力が所定のエツチング圧力(第
3図(a)に示すB点)に達したら、前回のエツチング
処理時に記憶しておいた可変バルブ7の開度v1に初期
開度係数K(1≦に≦1.1)を乗じた値の開度v2に
可変バルブ7をセットする(これをステップ34に示す
。)。
Next, when the pressure inside the vacuum container i reaches a predetermined etching pressure (point B shown in FIG. 3(a)), the initial opening of the variable valve 7 is adjusted to the opening degree v1 that was memorized during the previous etching process. The variable valve 7 is set to the opening degree v2, which is a value obtained by multiplying the degree coefficient K (1≦≦1.1) (this is shown in step 34).

次に、高周波電源13により真空容器l内に放電を生じ
させる(これをステップ35iこ示す。)。
Next, the high-frequency power source 13 generates a discharge in the vacuum vessel l (this is shown in step 35i).

放電を開始すると、真空容器l内の圧力は一挙にP2(
第3図(a)1こ示すC点)まで上昇する。このとき、
第3図(b)に示すように可変バルブ7の開度をv2ま
で開いておくことによって、真空容器l内の圧力上昇な
P2に押え、むやみに圧力が上昇するのを防いでいる。
When the discharge starts, the pressure inside the vacuum vessel l suddenly increases to P2(
The temperature rises to point C shown in FIG. 3(a). At this time,
As shown in FIG. 3(b), by keeping the opening degree of the variable valve 7 open to v2, the pressure increase in the vacuum container 1 is suppressed to P2, and the pressure is prevented from increasing unnecessarily.

次に、真空容器l内の圧力をフィードバックして、制御
器5i15内でPID制御を行ない可変バルブ70開度
を調整する(これをステップ36に示す。)。
Next, the pressure inside the vacuum container 1 is fed back to perform PID control in the controller 5i15 to adjust the opening degree of the variable valve 70 (this is shown in step 36).

次に、PID制御によって真空容器1内の圧力が所定の
エツチング処理圧力Plに近づき、許容範囲△P内に収
まっているかどうか判断する(これをステップ37に示
す。)。
Next, it is determined whether the pressure within the vacuum container 1 approaches a predetermined etching process pressure Pl and is within the allowable range ΔP by PID control (this is shown in step 37).

次に、真空容器l内の圧力が許容範囲内に収っていたら
、現在の可変バルブ7の開度な記憶させる(これをステ
ップ38に示す。)。開度の記憶は時間の経過とともに
次々と新しいデータが記憶され、データは近傍の4点位
を取って平均化したものを記憶する。
Next, if the pressure inside the vacuum container l is within the permissible range, the current opening degree of the variable valve 7 is memorized (this is shown in step 38). New data is stored one after another as time passes, and data obtained by averaging four neighboring points is stored.

次に、エツチングの終点を本−実施例には記載していな
い終点判定装置により検出して、放電継続がどうかを判
断する(これをステップ39に示す。)。可変バルブ7
の開度の記憶は、エツチング終了時の開度が最終値とし
て記憶される。
Next, the end point of etching is detected by an end point determining device not described in this embodiment, and it is determined whether or not the discharge continues (this is shown in step 39). variable valve 7
The opening degree at the end of etching is stored as the final value.

次善こ、次処理があるかどうかを同断する(これをステ
ップ40に示す。)。
It is then determined whether there is a next step or not (this is shown in step 40).

上記手順暑こ従って圧力制御を行なった場合の真空容器
内圧力および可変バルブ開度と時間の関係を第3図に示
す。真空容器1内の圧力がPoになったA点から処理ガ
スが供給され、B点に達した時点で、可変バルブ開度を
v2Iこ開け、放電を開始すると、圧力はC点のP2ま
で上昇し、その後PID制御により所定圧力P!に近づ
けられる。
FIG. 3 shows the relationship between the internal pressure of the vacuum vessel, the variable valve opening degree, and time when pressure control is performed according to the above procedure. Processing gas is supplied from point A, where the pressure inside the vacuum container 1 becomes Po, and when it reaches point B, the variable valve opening is opened by v2I to start discharging, and the pressure rises to point C, P2. Then, the predetermined pressure P! is controlled by PID control. can be approached.

この場合、可変バルブ7の初期開度を■2にしているの
で、圧力上昇をP2に押えられ、所定の圧力範囲Pl±
△Pに入る時間T2が早くなる。
In this case, since the initial opening degree of the variable valve 7 is set to ■2, the pressure increase can be suppressed to P2, and the predetermined pressure range Pl±
The time T2 to enter ΔP becomes faster.

以上、本−実施例によれば、圧力制御の手順を記憶した
制御装置により圧力制御が行なわれ、所定の処理圧力に
達した時点で、可変バルブに初期開度な与えて放電を開
始するので、圧力上昇が押えられ、かつ、はっきりした
圧力差が出るので。
As described above, according to this embodiment, pressure control is performed by a control device that stores pressure control procedures, and when a predetermined processing pressure is reached, an initial opening is given to the variable valve to start discharging. , because the pressure rise is suppressed and a clear pressure difference appears.

PID制御による圧力制御が容易であり、所定の処理圧
力範囲内に早く維持させることができろ。
Pressure control using PID control is easy, and the pressure can be quickly maintained within a predetermined processing pressure range.

〔発明の効果〕〔Effect of the invention〕

以上本発明によれば、プラズマ放電中の真空室内の処理
圧力を速やかに所定圧力に維持することができるという
効果がある。
As described above, according to the present invention, the processing pressure in the vacuum chamber during plasma discharge can be quickly maintained at a predetermined pressure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のエツチング装置の圧力制御装置の一実
施例を示す構成図、第2図は圧力の制御方法を示すフロ
ーチャート、第3図は真空容器内の圧力状態と時間の関
係および可変バルブの開度と時間の関係を示す図である
。 1・・・・・・真空容器、2,5.10・・・・・・バ
ルブ、3・・・流量制御器、7・・・・・・可変バルブ
、11・・・・・・真空ポンプ、12・・・・・・真空
計、13・・・・・・高周波電源、16・・・・・・中
央演算処理装置、18・・・・・・アナログ出力手段、
19・・・アナログ入力手段、加・・・・・・パルス出
力手段、4・・・ディジタル出力手段、Z・・・・・・
圧力制御手順記憶手段、ス・・・・・・記憶手段 ′Kl 図 11−一預ハ」Fポンプ。 第3図 14f
Fig. 1 is a configuration diagram showing an embodiment of the pressure control device of the etching apparatus of the present invention, Fig. 2 is a flowchart showing a pressure control method, and Fig. 3 is a diagram showing the relationship between the pressure state in the vacuum container and time and the variable FIG. 3 is a diagram showing the relationship between valve opening degree and time. 1...Vacuum container, 2,5.10...Valve, 3...Flow rate controller, 7...Variable valve, 11...Vacuum pump , 12... Vacuum gauge, 13... High frequency power supply, 16... Central processing unit, 18... Analog output means,
19...Analog input means, addition...Pulse output means, 4...Digital output means, Z...
Pressure control procedure storage means, memory means 'Kl' Figure 11-1 F pump. Figure 3 14f

Claims (1)

【特許請求の範囲】 1、真空容器内でプラズマを利用して試料をエッチング
処理するエッチング装置の圧力制御方法において、所定
圧力に減圧排気された前記真空容器内への処理ガスの導
入開始後、真空容器内の圧力が所定のエッチング処理圧
力範囲内に達したら、排気系の可変バルブを前回のエッ
チング処理終了前の開度を基準に初期開度を設定して合
わせるとともに放電を開始し、放電後の前記真空容器内
の圧力を測定して、前記可変バルブをPID制御し、所
定のエッチング処理圧力に調整することを特徴とするエ
ッチング装置の圧力制御方法。 2、真空容器内でプラズマを利用して試料をエッチング
処理するエッチング装置の圧力制御装置において、 前記真空容器に接続された排気系のバルブおよび真空ポ
ンプと、前記真空容器に接続された処理ガス供給系のバ
ルブとに作動信号を送るディジタル出力手段と、 前記排気系の可変バルブの開度を調整する信号を送るパ
ルス出力手段と、 前記真空容器に設けた真空計により測定した圧力値を入
力するアナログ入力手段と、 前記処理ガス供給系の流量制御器の流量を調整する信号
と、前記真空容器に接続された高周波電源を作動させる
信号とを送るアナログ出力手段と、 前記可変バルブの前回のエッチング処理終了前の開度を
記憶する記憶手段と、 前記真空容器内の圧力が所定圧力に減圧排気された時点
で、前記真空容器内へ処理ガスを供給し、所定のエッチ
ング処理圧力に達した時点で、前記可変バルブを前回の
エッチング処理終了前の開度を基準に初期開度を設定し
て合わせ、前記真空容器内で放電を開始し、前記可変バ
ルブをPID制御して放電後の前記真空容器内の圧力を
所定のエッチング圧力に調整する手順を記憶した圧力制
御手順記憶手段と、 前記ディジタル出力手段、前記パルス出力手段、前記ア
ナログ入力手段、前記アナログ出力手段および前記圧力
制御手順記憶手段を制御する中央演算処理装置と、 を有することを特徴とするエッチング装置の圧力制御装
置。
[Claims] 1. In a pressure control method for an etching apparatus that etches a sample using plasma in a vacuum container, after starting to introduce a processing gas into the vacuum container which has been evacuated to a predetermined pressure, When the pressure inside the vacuum container reaches the predetermined etching process pressure range, the variable valve in the exhaust system is set to the initial opening based on the opening before the end of the previous etching process, and discharge is started. A pressure control method for an etching apparatus, characterized in that the pressure inside the vacuum container is subsequently measured, and the variable valve is controlled by PID to adjust the pressure to a predetermined etching process pressure. 2. In a pressure control device for an etching apparatus that etches a sample using plasma in a vacuum container, an exhaust system valve and a vacuum pump connected to the vacuum container, and a processing gas supply connected to the vacuum container. digital output means for sending an operating signal to a valve in the exhaust system; pulse output means for sending a signal to adjust the opening degree of the variable valve in the exhaust system; and inputting a pressure value measured by a vacuum gauge provided in the vacuum vessel. an analog input means; an analog output means for sending a signal for adjusting the flow rate of a flow rate controller of the processing gas supply system and a signal for activating a high frequency power source connected to the vacuum container; and a previous etching of the variable valve. a storage means for storing the opening degree before the end of the process; and when the pressure inside the vacuum vessel is reduced to a predetermined pressure, a processing gas is supplied into the vacuum vessel, and when the predetermined etching process pressure is reached; Then, the initial opening degree of the variable valve is set and adjusted based on the opening degree before the end of the previous etching process, discharge is started in the vacuum container, and the variable valve is controlled by PID to maintain the vacuum after the discharge. Pressure control procedure storage means storing a procedure for adjusting the pressure inside the container to a predetermined etching pressure; and the digital output means, the pulse output means, the analog input means, the analog output means, and the pressure control procedure storage means. A pressure control device for an etching apparatus, comprising: a central processing unit for controlling the pressure; and a central processing unit for controlling the pressure.
JP61211633A 1986-09-10 1986-09-10 Etching device pressure control method and device Expired - Lifetime JPH0812855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61211633A JPH0812855B2 (en) 1986-09-10 1986-09-10 Etching device pressure control method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61211633A JPH0812855B2 (en) 1986-09-10 1986-09-10 Etching device pressure control method and device

Publications (2)

Publication Number Publication Date
JPS6369227A true JPS6369227A (en) 1988-03-29
JPH0812855B2 JPH0812855B2 (en) 1996-02-07

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ID=16609008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61211633A Expired - Lifetime JPH0812855B2 (en) 1986-09-10 1986-09-10 Etching device pressure control method and device

Country Status (1)

Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252428A (en) * 1988-08-16 1990-02-22 Tokyo Electron Ltd Treatment apparatus
KR100483941B1 (en) * 2001-12-03 2005-04-18 서영철 Power supplier for plasma having operation part of gas and vaccum
KR100483948B1 (en) * 2001-12-03 2005-04-18 서영철 Power supplier for plasma capable of controlling gas and vaccum
JP2006222141A (en) * 2005-02-08 2006-08-24 Hitachi High-Technologies Corp Vacuum processing apparatus
JP2014003332A (en) * 1999-07-13 2014-01-09 Nordson Corp Method for operating plasma processing system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080225A (en) * 1983-10-11 1985-05-08 Hitachi Ltd Device for drying process
JPS6154627A (en) * 1984-08-27 1986-03-18 Hitachi Ltd Plasma processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080225A (en) * 1983-10-11 1985-05-08 Hitachi Ltd Device for drying process
JPS6154627A (en) * 1984-08-27 1986-03-18 Hitachi Ltd Plasma processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252428A (en) * 1988-08-16 1990-02-22 Tokyo Electron Ltd Treatment apparatus
JP2014003332A (en) * 1999-07-13 2014-01-09 Nordson Corp Method for operating plasma processing system
KR100483941B1 (en) * 2001-12-03 2005-04-18 서영철 Power supplier for plasma having operation part of gas and vaccum
KR100483948B1 (en) * 2001-12-03 2005-04-18 서영철 Power supplier for plasma capable of controlling gas and vaccum
JP2006222141A (en) * 2005-02-08 2006-08-24 Hitachi High-Technologies Corp Vacuum processing apparatus
JP4705789B2 (en) * 2005-02-08 2011-06-22 株式会社日立ハイテクノロジーズ Vacuum processing equipment

Also Published As

Publication number Publication date
JPH0812855B2 (en) 1996-02-07

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