JPH0812855B2 - Etching device pressure control method and device - Google Patents
Etching device pressure control method and deviceInfo
- Publication number
- JPH0812855B2 JPH0812855B2 JP61211633A JP21163386A JPH0812855B2 JP H0812855 B2 JPH0812855 B2 JP H0812855B2 JP 61211633 A JP61211633 A JP 61211633A JP 21163386 A JP21163386 A JP 21163386A JP H0812855 B2 JPH0812855 B2 JP H0812855B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- vacuum container
- etching
- predetermined
- variable valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はエッチング装置の圧力制御方法および装置に
係り、特にプラズマを利用して処理するのに好適なエッ
チング装置の圧力制御方法および装置に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a pressure control method and apparatus for an etching apparatus, and more particularly to a pressure control method and apparatus for an etching apparatus suitable for processing using plasma. Is.
従来の圧力制御方法は、特開昭61−54627号に記載の
ように、所定圧力に減圧排気された真空容器内へ処理ガ
スを導入し、導入された処理ガスをプラズマ放電させる
とき、プラズマ放電開始時の圧力上昇分を見込んで、所
定の処理圧力より低目の圧力でプラズマ放電を開始し、
上昇した圧力がだいたい処理圧力になるようにして、真
空容器内の処理圧力を調整し、所定圧力減圧排気された
真空容器内への処理ガスの導入開始から放電開始までに
要する時間を短縮し、スループットを向上するものであ
った。A conventional pressure control method is, as described in JP-A-61-54627, introducing a processing gas into a vacuum container that is evacuated to a predetermined pressure and plasma-discharging the introduced processing gas. In anticipation of the pressure increase at the start, plasma discharge is started at a pressure lower than the predetermined processing pressure,
As the increased pressure becomes approximately the processing pressure, the processing pressure in the vacuum container is adjusted, and the time required from the start of the introduction of the processing gas into the vacuum container that has been evacuated to a predetermined pressure to the start of the discharge is shortened, It was to improve the throughput.
上記の従来技術は、所定の処理圧力に速やかに圧力を
収束制御する点について配慮がされておらず、処理ガス
をプラズマ放電させたときに上昇した圧力が、ほぼ所定
の処理圧力に等しくなっているので、所定の処理圧力と
の差が小さく、圧力をフィードバック制御するのに収束
させにくいという問題があった。The above-mentioned conventional technique does not consider the point that the pressure is quickly converged to a predetermined processing pressure, and the pressure increased when the processing gas is plasma-discharged becomes almost equal to the predetermined processing pressure. Therefore, there is a problem that the difference from the predetermined processing pressure is small and it is difficult to converge the pressure for feedback control.
本発明の目的は、プラズマ放電中の真空室内の処理圧
力を速やかに所定圧力に維持することのできるエッチン
グ装置の圧力制御方法および装置を提供することにあ
る。An object of the present invention is to provide a pressure control method and apparatus for an etching apparatus that can quickly maintain the processing pressure in the vacuum chamber during plasma discharge at a predetermined pressure.
上記目的は、真空容器内でプラズマを利用して試料を
エッチング処理するエッチング装置の圧力制御装置にお
いて、真空容器に接続された排気系のバルブおよび真空
ポンプと、真空容器に接続された処理ガス供給系のバル
ブとに作動信号を送るディジタル出力手段と、排気系の
可変バルブの開度を調整する信号を送るパルス出力手段
と、真空容器に設けた真空計により測定した圧力値を入
力するアナログ入力手段と、処理ガス供給系の流量制御
器の流量を調整する信号と真空容器に接続された高周波
電源を作動させる信号とを送るアナログ出力手段と、前
回のエッチング処理終了前の可変バルブの開度を記憶す
る記憶手段と、圧力調整手順を記憶した圧力制御手順記
憶手段と、これら入出力手段および記憶手段を制御する
中央演算処理装置とを有し、真空容器内の圧力が所定圧
力に減圧排気された時点で、真空容器内へ処理ガスを供
給し、所定のエッチング処理圧力に達した時点で、可変
バルブを前回のエッチング処理終了前の開度に初期開度
係数Ｋ（１≦Ｋ≦1.1）を乗じた値の初期開度を設定し
て合わせ、真空容器内で放電を開始し、可変バルブをPI
D制御して放電で上昇した真空容器内の圧力を所定のエ
ッチング圧力に調整することによって達成される。The above-mentioned object is a pressure control device of an etching apparatus for etching a sample using plasma in a vacuum container, and an exhaust system valve and a vacuum pump connected to the vacuum container and a processing gas supply connected to the vacuum container. Digital output means for sending an operation signal to the system valve, pulse output means for sending a signal for adjusting the opening degree of the variable valve of the exhaust system, and analog input for inputting the pressure value measured by the vacuum gauge provided in the vacuum container. Means, an analog output means for sending a signal for adjusting the flow rate of the flow rate controller of the processing gas supply system and a signal for operating the high frequency power source connected to the vacuum container, and the opening degree of the variable valve before the end of the previous etching processing. A storage means for storing the pressure control procedure, a pressure control procedure storage means for storing the pressure adjustment procedure, and a central processing unit for controlling the input / output means and the storage means. The process gas is supplied to the vacuum container when the pressure inside the vacuum container is reduced to a predetermined pressure and exhausted to a predetermined pressure. Set the initial opening by multiplying the opening by the initial opening coefficient K (1 ≤ K ≤ 1.1), start discharge in the vacuum vessel, and set the variable valve to PI.
This is achieved by controlling the pressure in the vacuum container, which is increased by discharge by D control, to a predetermined etching pressure.
圧力制御手順記憶手段に記憶した圧力調整手順に従
い、中央演算処理装置で集中コントロールをして、真空
容器内の圧力値をアナログ入力手段に入力するととも
に、ディジタル出力手段から真空ポンプおよび排気系の
バルブに信号を送り、真空容器内の圧力が所定圧力に減
圧排気された時点で、ディジタル出力手段およびアナロ
グ出力手段から処理ガス供給系のバルブおよび流量制御
弁に信号を送り、真空容器内へ処理ガスを供給し、所定
のエッチング処理圧力に達した時点で、パルス出力出段
から排気系の可変バルブを調整する信号を送り、可変バ
ルブを前回のエッチング処理終了前の開度に初期開度係
数Ｋ（１≦Ｋ≦1.1）を乗じた値の初期開度に合わせ、
アナログ出力手段から高周波電源を作動させる信号を送
り、真空容器内で放電を開始し、パルス出力手段から可
変バルブの調整信号を送り、可変バルブをPID制御して
放電後の真空容器内の圧力を所定のエッチング圧力に調
整することで、プラズマ放電中の真空室内の処理圧力を
速やかに所定圧力に維持することができる。According to the pressure adjustment procedure stored in the pressure control procedure storage means, the central processing unit performs centralized control to input the pressure value in the vacuum container to the analog input means, and the digital output means to the vacuum pump and the exhaust system valve. To the process gas supply system valve and flow control valve from the digital output means and the analog output means when the pressure inside the vacuum container is reduced to a predetermined pressure and exhausted. When a predetermined etching processing pressure is reached, a signal for adjusting the variable valve of the exhaust system is sent from the pulse output stage to set the initial opening coefficient K to the opening before the end of the previous etching processing. Match the initial opening of the product of (1 ≤ K ≤ 1.1),
The analog output means sends a signal to operate the high frequency power source to start discharge in the vacuum vessel, and the pulse output means sends a variable valve adjustment signal to PID control the variable valve to control the pressure in the vacuum vessel after discharge. By adjusting the etching pressure to a predetermined value, the processing pressure in the vacuum chamber during plasma discharge can be quickly maintained at the predetermined pressure.
以下、本発明の一実施例を第１図から第３図により説
明する。An embodiment of the present invention will be described below with reference to FIGS.
第１図に圧力制御装置のブロック図を示す。真空容器
１の一方には、バルブ2,流量制御器3,バルブ５を順次介
して処理ガス供給源６が接続してあり、他方には、可変
バルブ7,バルブ10を介して真空ポンプ11が接続してあ
る。また、真空容器１には真空計12が取り付けられ、高
周波電源13が接続してある。FIG. 1 shows a block diagram of the pressure control device. A processing gas supply source 6 is connected to one side of the vacuum container 1 via a valve 2, a flow rate controller 3 and a valve 5 in that order, and a vacuum pump 11 is connected to the other side of the vacuum vessel 1 via a variable valve 7 and a valve 10. It is connected. Further, a vacuum gauge 12 is attached to the vacuum container 1, and a high frequency power source 13 is connected thereto.
また、制御装置15は、中央演算処理装置16にアナログ
出力手段18,アナログ入力手段19,パルス出力手段20およ
びディジタル出力手段21から成る入出力装置17と、圧力
制御手順記憶手段23および記憶手段24から成る記憶装置
22とが接続して成る。Further, the control device 15 includes an input / output device 17 including a central processing unit 16 including an analog output means 18, an analog input means 19, a pulse output means 20 and a digital output means 21, a pressure control procedure storage means 23 and a storage means 24. Storage device consisting of
22 and connected.
アナログ出力手段18は、流量制御器コントローラ４を
介して流量制御器３と、高周波電源コントローラ14を介
して高周波電源13とにつながり、中央演算処理装置16の
指令信号をアナログ信号に変換して、流量制御器コント
ローラ４または高周波電源コントローラ14に信号を送
り、流量制御器３または高周波電源13を作動，制御す
る。The analog output means 18 is connected to the flow rate controller 3 via the flow rate controller controller 4 and the high frequency power source 13 via the high frequency power source controller 14, converts the command signal of the central processing unit 16 into an analog signal, A signal is sent to the flow rate controller 4 or the high frequency power supply controller 14 to operate and control the flow rate controller 3 or the high frequency power supply 13.
アナログ入力手段19は真空計12に継ながり、真空計12
で検出したアナログ量をディジタル量に変換するもの
で、例えばアナログ入力ボードである。The analog input means 19 is connected to the vacuum gauge 12,
It converts the analog quantity detected in 1. into a digital quantity, for example, an analog input board.
パルス出力手段20は、圧力制御弁コントローラ９を介
しパルスモータ８につながり、パルスモータ８は可変バ
ルブ７に連結される。中央演算処理装置16の指令信号を
パルス信号に変換して、圧力制御弁コントローラ９に送
り、圧力制御弁コントローラ９によってパルスモータ８
を駆動，制御して、可変バルブ７の調整を行なう。The pulse output means 20 is connected to the pulse motor 8 via the pressure control valve controller 9, and the pulse motor 8 is connected to the variable valve 7. The command signal of the central processing unit 16 is converted into a pulse signal and sent to the pressure control valve controller 9, and the pressure control valve controller 9 causes the pulse motor 8 to operate.
Is driven and controlled to adjust the variable valve 7.
ディジタル出力手段21は、処理ガス供給系のバルブ2,
バルブ５と排気系のバルブ10と真空ポンプ11とにそれぞ
れ接続され、中央演算処理装置16の指令信号をディジタ
ル信号に変換して、バルブ2,バルブ5,バルブ10または真
空ポンプ11にそれぞれ信号を送り作動させる。The digital output means 21 includes the processing gas supply system valve 2,
It is connected to the valve 5, the exhaust system valve 10 and the vacuum pump 11, respectively, and converts the command signal of the central processing unit 16 into a digital signal, and outputs the signal to the valve 2, valve 5, valve 10 or vacuum pump 11, respectively. Operate the feed.
圧力制御手順記憶手段23は、真空容器１内の圧力を所
定の圧力に制御する手順を記憶させたもので、例えばRO
M（Read Only Memory）である。The pressure control procedure storage means 23 stores a procedure for controlling the pressure inside the vacuum container 1 to a predetermined pressure, for example, RO
It is M (Read Only Memory).
記憶手段24は、前回の圧力制御時に真空容器１内が所
定の処理圧力に保持されている時の可変バルブの開度を
記憶しておくもので、例えば、RAM（Randam Access Mem
orry）である。The storage means 24 stores the opening degree of the variable valve when the inside of the vacuum container 1 is maintained at a predetermined processing pressure at the previous pressure control, and for example, RAM (Randam Access Mem).
orry).
上記構成により、圧力制御手順記憶手段23に記憶され
た手順に従い動作を説明する。手順を第２図に示し、圧
力状態を第３図に示す。With the above configuration, the operation will be described according to the procedure stored in the pressure control procedure storage means 23. The procedure is shown in FIG. 2 and the pressure state is shown in FIG.
まず、可変バルブ７およびバルブ10を開き、真空ポン
プ11を作動させて真空容器１内を真空排気する（これを
ステップ31に示す。）。First, the variable valve 7 and the valve 10 are opened, and the vacuum pump 11 is operated to evacuate the inside of the vacuum container 1 (this is shown in step 31).
次に、真空容器１内の圧力が所定の圧力P0（第３図
（ａ）に示すＡ点）に達したら、バルブ２およびバルブ
５を開き、流量制御器３を制御して処理ガス供給源６か
ら適量の処理ガスを真空容器１内へ供給する（これをス
テップ32に示す。）。Next, when the pressure in the vacuum container 1 reaches a predetermined pressure P 0 (point A shown in FIG. 3A), the valves 2 and 5 are opened and the flow rate controller 3 is controlled to supply the processing gas. An appropriate amount of processing gas is supplied from the source 6 into the vacuum container 1 (this is shown in step 32).
次に、処理ガスが供給される真空容器１内の圧力が所
定のエッチング処理圧力P1の許容圧力範囲△Ｐ内に達し
たかどうかを判断する（これをステップ33に示す。）。Next, it is judged whether or not the pressure inside the vacuum container 1 to which the processing gas is supplied has reached the allowable pressure range ΔP of the predetermined etching processing pressure P 1 (this is shown in step 33).
次に、真空容器１内の圧力が所定のエッチング圧力
（第３図（ａ）に示すＢ点）に達したら、前回のエッチ
ング処理時に記憶しておいた可変バルブ７の開度V1に初
期開度係数Ｋ（１≦Ｋ≦1.1）を乗じた値の開度V2に可
変バルブ７をセットする（これをステップ34に示
す。）。初期開度係数Ｋは、真空ポンプ10及び配管等の
経時的に変化する排気能力の低下を補償するものであ
り、数値的には１≦Ｋ≦1.1の範囲に設定する。次に、
高周波電源13により真空容器１内に放電を生じさせる
（これをステップ35に示す。）。Next, when the pressure in the vacuum chamber 1 reaches a predetermined etching pressure (point B shown in FIG. 3A), the opening degree V 1 of the variable valve 7 stored at the time of the previous etching process is initially set. The variable valve 7 is set to the opening V 2 which is a value obtained by multiplying the opening coefficient K (1 ≦ K ≦ 1.1) (this is shown in step 34). The initial opening coefficient K compensates for the deterioration of the exhaust capacity of the vacuum pump 10, the piping, etc., which changes with time, and is numerically set within the range of 1 ≦ K ≦ 1.1. next,
An electric discharge is generated in the vacuum container 1 by the high frequency power source 13 (this is shown in step 35).
放電を開始すると、真空容器１内の圧力は一挙にP
2（第３図（ａ）に示すＣ点）まで上昇する。このと
き、第３図（ｂ）に示すように可変バルブ７の開度をV2
まで開いておくことによって、真空容器１内の圧力上昇
をP2に押え、むやみに圧力が上昇するのを防いでいる。When the discharge is started, the pressure inside the vacuum container 1 will change to P
2 Ascend to 2 (point C in Figure 3 (a)). At this time, as shown in FIG. 3 (b), the opening degree of the variable valve 7 is set to V 2
By opening to the maximum, the pressure increase in the vacuum container 1 is suppressed to P 2 and the pressure is prevented from rising unnecessarily.
次に、真空容器１内の圧力をフィードバックして、制
御装置15内でPID制御を行ない可変バルブ７の開度を調
整する（これをステップ36に示す。）。Next, the pressure in the vacuum container 1 is fed back to perform PID control in the controller 15 to adjust the opening of the variable valve 7 (this is shown in step 36).
次に、PID制御によって真空容器１内の圧力が所定の
エッチング処理圧力P1に近づき、許容範囲△Ｐ内に収ま
っているかどうか判断する（これをステップ37に示
す。）。Next, it is determined by PID control whether the pressure in the vacuum container 1 approaches the predetermined etching processing pressure P 1 and is within the allowable range ΔP (this is shown in step 37).
次に、真空容器１内の圧力が許容範囲内に収っていた
ら、現在の可変バルブ７の開度を記憶させる（これをス
テップ38に示す。）。開度の記憶は時間の経過とともに
次々と新しいデータが記憶され、データは近傍の４点位
を取って平均化したものを記憶する。Next, if the pressure in the vacuum container 1 is within the allowable range, the current opening degree of the variable valve 7 is stored (this is shown in step 38). The opening degree is stored with new data one after another over time, and the data is stored by averaging four nearby points.
次に、エッチングの終点を本一実施例には記載してい
ない終点判定装置により検出して、放電継続がどうかを
判断する（これをステップ39に示す。）。可変バルブ７
の開度の記憶は、エッチング終了時の開度が最終値とし
て記憶される。Next, the end point of etching is detected by an end point determination device not described in this embodiment to determine whether or not the discharge is continued (this is shown in step 39). Variable valve 7
In the memory of the opening degree, the opening degree at the end of etching is stored as the final value.
次に、次処理があるかどうかを判断する（これをステ
ップ40に示す。）。Next, it is determined whether there is a next process (this is shown in step 40).
上記手順に従って圧力制御を行なった場合の真空容器
内圧力および可変バルブ開度と時間の関係を第３図に示
す。真空容器１内の圧力がP0になったＡ点から処理ガス
が供給され、Ｂ点に達した時点で、可変バルブ開度をV2
に開け、放電を開始すると、圧力はＣ点のP2まで上昇
し、その後PID制御により所定圧力P1に近づけられる。FIG. 3 shows the relationship between the pressure in the vacuum container, the variable valve opening and time when the pressure control is performed according to the above procedure. When the processing gas is supplied from the point A when the pressure in the vacuum container 1 reaches P 0 and reaches the point B, the variable valve opening is set to V 2
Opened, when starting the discharge, the pressure rises to P 2 at point C, it is brought close to the predetermined pressure P 1 by the subsequent PID control.
この場合、可変バルブ７の初期開度をV2にしているの
で、圧力上昇をP2に押えられ、所定の圧力範囲P1±△Ｐ
に入る時間T2が早くなる。In this case, since the initial opening of the variable valve 7 is set to V 2 , the pressure increase is suppressed to P 2 and the predetermined pressure range P 1 ± ΔP
The entry time T 2 will be faster.
以上、本一実施例によれば、圧力制御の手順を記憶し
た制御装置により圧力制御が行なわれ、所定の処理圧力
に達した時点で、可変バルブに初期開度を与えて放電を
開始するので、圧力上昇が押えられ、かつ、はっきりし
た圧力差が出るので、PID制御による圧力制御が容易で
あり、所定の処理圧力範囲内に早く維持させることがで
きる。As described above, according to the present embodiment, the pressure control is performed by the control device that stores the procedure of the pressure control, and when the predetermined processing pressure is reached, the variable valve is given the initial opening degree to start the discharge. Since the pressure rise is suppressed and a clear pressure difference is produced, the pressure control by the PID control is easy, and it is possible to quickly maintain the pressure within the predetermined processing pressure range.
以上本発明によれば、プラズマ放電中の真空室内の処
理圧力を速やかに所定圧力に維持することができるとい
う効果がある。As described above, according to the present invention, there is an effect that the processing pressure in the vacuum chamber during plasma discharge can be quickly maintained at a predetermined pressure.
第１図は本発明のエッチング装置の圧力制御装置の一実
施例を示す構成図、第２図は圧力の制御方法を示すフロ
ーチャート、第３図は真空容器内の圧力状態と時間の関
係および可変バルブの開度と時間の関係を示す図であ
る。 １……真空容器、2,5,10……バルブ、３……流量制御
器、７……可変バルブ、11……真空ポンプ、12……真空
計、13……高周波電源、16……中央演算処理装置、18…
…アナログ出力手段、19……アナログ入力手段、20……
パルス出力手段、21……ディジタル出力手段、23……圧
力制御手順記憶手段、24……記憶手段FIG. 1 is a block diagram showing an embodiment of a pressure control device of an etching apparatus of the present invention, FIG. 2 is a flow chart showing a pressure control method, and FIG. 3 is a relation between a pressure state in a vacuum container and time and variable. It is a figure which shows the opening degree of a valve, and the relationship of time. 1 ... Vacuum container, 2,5,10 ... Valve, 3 ... Flow controller, 7 ... Variable valve, 11 ... Vacuum pump, 12 ... Vacuum gauge, 13 ... High frequency power supply, 16 ... Central Processor, 18 ...
… Analog output means, 19 …… Analog input means, 20 ……
Pulse output means, 21 ... Digital output means, 23 ... Pressure control procedure storage means, 24 ... Storage means
Claims (2)
ッチング処理するエッチング装置の圧力制御方法におい
て、 所定圧力に減圧排気された前記真空容器内への処理ガス
の導入開始後、前記真空容器内の圧力が所定のエッチン
グ処理圧力範囲内に達したら、前回のエッチング処理終
了前の開度に初期開度係数Ｋ（１≦Ｋ≦1.1）を乗じた
値の初期開度を設定し、排気系の可変バルブを前記初期
開度に合わせると共に、放電を開始し、該放電に伴い上
昇した前記真空容器内の圧力を測定して、前記可変バル
ブをPID制御し、所定のエッチング処理圧力に調整する
ことを特徴とするエッチング装置の圧力制御方法。1. A pressure control method for an etching apparatus for etching a sample using plasma in a vacuum container, comprising: starting the introduction of a processing gas into the vacuum container that has been evacuated to a predetermined pressure; When the internal pressure reaches the predetermined etching processing pressure range, the initial opening is set to a value obtained by multiplying the opening before the end of the previous etching processing by the initial opening coefficient K (1 ≦ K ≦ 1.1). While adjusting the variable valve of the system to the initial opening, start the discharge, measure the pressure in the vacuum container that rises with the discharge, PID control the variable valve, and adjust to the predetermined etching processing pressure A pressure control method for an etching apparatus, comprising:
ッチング処理するエッチング装置の圧力制御装置におい
て、 前記真空容器に接続された排気系のバルブおよび真空ポ
ンプと、前記真空容器に接続された処理ガス供給系のバ
ルブとに作動信号を送るディジタル出力手段と、 前記排気系の可変バルブの開度を調整する信号を送るパ
ルス出力手段と、 前記真空容器に設けた真空計により測定した圧力値を入
力するアナログ入力手段と、 前記処理ガス供給系の流量制御期の流量を調整する信号
と、前記真空容器に接続された高周波電源を作動させる
信号とを送るアナログ出力手段と、 前記可変バルブの前回のエッチング処理終了前の開度を
記憶する記憶手段と、 前記真空容器内の圧力が所定圧力に減圧排気された時点
で、前記真空容器内へ処理ガスを供給し、所定のエッチ
ング処理圧力に達した時点で、前回のエッチング処理終
了後の開度に初期開度係数Ｋ（１≦Ｋ≦1.1）を乗じた
値の初期開度を設定し、前記可変バルブを前記初期開度
に合わせ、前記真空容器内で放電を開始し、前記可変バ
ルブをPID制御して前記放電で上昇した前記真空容器内
の圧力を所定のエッチング圧力に調整する手段を記憶し
た圧力制御手順記憶手段と、 前記ディジタル出力手段、前記パルス出力手段、前記ア
ナログ入力手段、前記アナログ出力手段および前記圧力
制御手順記憶手段を制御する中央演算処理装置と、 を有することを特徴とするエッチング装置の圧力制御装
置。2. A pressure control device of an etching device for etching a sample using plasma in a vacuum container, comprising: an exhaust system valve and a vacuum pump connected to the vacuum container; and a vacuum pump connected to the vacuum container. Digital output means for sending an operation signal to the valve of the processing gas supply system, pulse output means for sending a signal for adjusting the opening of the variable valve of the exhaust system, and pressure value measured by a vacuum gauge provided in the vacuum container. An analog input means for inputting, a signal for adjusting the flow rate in the flow rate control period of the processing gas supply system, and an analog output means for sending a signal for operating a high frequency power source connected to the vacuum container, and the variable valve A storage unit that stores the opening before the end of the previous etching process, and when the pressure inside the vacuum container is exhausted to a predetermined pressure, the storage unit is stored in the vacuum container. When a predetermined amount of processing gas is supplied and the predetermined etching processing pressure is reached, the opening degree after the end of the previous etching processing is multiplied by the initial opening coefficient K (1 ≦ K ≦ 1.1) to set the initial opening degree. Means for adjusting the variable valve to the initial opening, starting discharge in the vacuum container, and PID controlling the variable valve to adjust the pressure in the vacuum container raised by the discharge to a predetermined etching pressure And a central processing unit for controlling the digital output means, the pulse output means, the analog input means, the analog output means, and the pressure control procedure storage means. And a pressure control device for an etching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61211633A JPH0812855B2 (en) | 1986-09-10 | 1986-09-10 | Etching device pressure control method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61211633A JPH0812855B2 (en) | 1986-09-10 | 1986-09-10 | Etching device pressure control method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6369227A JPS6369227A (en) | 1988-03-29 |
| JPH0812855B2 true JPH0812855B2 (en) | 1996-02-07 |
Family
ID=16609008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61211633A Expired - Lifetime JPH0812855B2 (en) | 1986-09-10 | 1986-09-10 | Etching device pressure control method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0812855B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252428A (en) * | 1988-08-16 | 1990-02-22 | Tokyo Electron Ltd | Treatment apparatus |
| EP1203513B1 (en) * | 1999-07-13 | 2008-01-23 | Nordson Corporation | High-speed symmetrical plasma treatment system |
| KR100483941B1 (en) * | 2001-12-03 | 2005-04-18 | 서영철 | Power supplier for plasma having operation part of gas and vaccum |
| KR100483948B1 (en) * | 2001-12-03 | 2005-04-18 | 서영철 | Power supplier for plasma capable of controlling gas and vaccum |
| JP4705789B2 (en) * | 2005-02-08 | 2011-06-22 | 株式会社日立ハイテクノロジーズ | Vacuum processing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104909B2 (en) * | 1983-10-11 | 1994-12-21 | 株式会社日立製作所 | Dry process treatment method and apparatus thereof |
| JPS6154627A (en) * | 1984-08-27 | 1986-03-18 | Hitachi Ltd | Plasma processing method |
-
1986
- 1986-09-10 JP JP61211633A patent/JPH0812855B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6369227A (en) | 1988-03-29 |
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