JPS6365639B2 - - Google Patents

Info

Publication number
JPS6365639B2
JPS6365639B2 JP58196401A JP19640183A JPS6365639B2 JP S6365639 B2 JPS6365639 B2 JP S6365639B2 JP 58196401 A JP58196401 A JP 58196401A JP 19640183 A JP19640183 A JP 19640183A JP S6365639 B2 JPS6365639 B2 JP S6365639B2
Authority
JP
Japan
Prior art keywords
reactor
rotating shaft
susceptor
exhaust hole
susceptors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58196401A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6090894A (ja
Inventor
Juji Furumura
Takeshi Nishizawa
Masayuki Takeda
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19640183A priority Critical patent/JPS6090894A/ja
Publication of JPS6090894A publication Critical patent/JPS6090894A/ja
Publication of JPS6365639B2 publication Critical patent/JPS6365639B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP19640183A 1983-10-20 1983-10-20 気相成長装置 Granted JPS6090894A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19640183A JPS6090894A (ja) 1983-10-20 1983-10-20 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19640183A JPS6090894A (ja) 1983-10-20 1983-10-20 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6090894A JPS6090894A (ja) 1985-05-22
JPS6365639B2 true JPS6365639B2 (fr) 1988-12-16

Family

ID=16357250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19640183A Granted JPS6090894A (ja) 1983-10-20 1983-10-20 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6090894A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597955Y2 (ja) * 1991-12-28 1999-07-26 京セラ株式会社 画像形成装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149131U (ja) * 1984-03-15 1985-10-03 株式会社東芝 気相成長装置
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
EP0921557A3 (fr) * 1997-09-30 2004-03-17 Siemens Aktiengesellschaft Formation de couche non homogène par utilisation d'un rideau protecteur de gas inerte
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置
CN106399970A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 环管式低压化学气相沉淀腔
CN106245111A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 低压化学气相沉淀腔的晶圆支撑结构
CN106245004A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 内外喷气式低压化学气相沉淀腔
CN111501019A (zh) * 2020-05-13 2020-08-07 深圳市纳设智能装备有限公司 一种用于cvd设备的反应室涡轮结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144961A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Vapor growth method
JPS5329101U (fr) * 1976-08-19 1978-03-13
JPS577899A (en) * 1980-06-13 1982-01-16 Hitachi Ltd Vapor phase reacting apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144961A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Vapor growth method
JPS5329101U (fr) * 1976-08-19 1978-03-13
JPS577899A (en) * 1980-06-13 1982-01-16 Hitachi Ltd Vapor phase reacting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597955Y2 (ja) * 1991-12-28 1999-07-26 京セラ株式会社 画像形成装置

Also Published As

Publication number Publication date
JPS6090894A (ja) 1985-05-22

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