JPS636138B2 - - Google Patents

Info

Publication number
JPS636138B2
JPS636138B2 JP55124176A JP12417680A JPS636138B2 JP S636138 B2 JPS636138 B2 JP S636138B2 JP 55124176 A JP55124176 A JP 55124176A JP 12417680 A JP12417680 A JP 12417680A JP S636138 B2 JPS636138 B2 JP S636138B2
Authority
JP
Japan
Prior art keywords
substrate
silicon
main surface
processed
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55124176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5748227A (en
Inventor
Fumio Yanagihara
Yukio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12417680A priority Critical patent/JPS5748227A/ja
Publication of JPS5748227A publication Critical patent/JPS5748227A/ja
Publication of JPS636138B2 publication Critical patent/JPS636138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
JP12417680A 1980-09-08 1980-09-08 Manufacture of semiconductor device Granted JPS5748227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12417680A JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12417680A JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5748227A JPS5748227A (en) 1982-03-19
JPS636138B2 true JPS636138B2 (enrdf_load_stackoverflow) 1988-02-08

Family

ID=14878845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12417680A Granted JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5748227A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830987A (en) * 1987-11-19 1989-05-16 Texas Instruments Incorporated Contactless annealing process using cover slices
DE19851873A1 (de) * 1998-11-10 2000-05-11 Zae Bayern Verfahren zum Aufwachsen einer kristallinen Struktur
JP4289677B2 (ja) 2005-02-04 2009-07-01 株式会社 一歩 磁気力を利用した移動玩具

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
BE632892A (enrdf_load_stackoverflow) * 1962-05-29
JPS48104466A (enrdf_load_stackoverflow) * 1972-04-14 1973-12-27

Also Published As

Publication number Publication date
JPS5748227A (en) 1982-03-19

Similar Documents

Publication Publication Date Title
US4169000A (en) Method of forming an integrated circuit structure with fully-enclosed air isolation
US3518503A (en) Semiconductor structures of single crystals on polycrystalline substrates
US3400309A (en) Monolithic silicon device containing dielectrically isolatng film of silicon carbide
US4343676A (en) Etching a semiconductor material and automatically stopping same
US4180422A (en) Method of making semiconductor diodes
US3746587A (en) Method of making semiconductor diodes
JP2820024B2 (ja) シリコン半導体素子製造用基板の製造方法
US4106050A (en) Integrated circuit structure with fully enclosed air isolation
US4051507A (en) Semiconductor structures
US3698947A (en) Process for forming monocrystalline and poly
JPS636138B2 (enrdf_load_stackoverflow)
JPH06151864A (ja) 半導体基板及びその製造方法
JPS61229317A (ja) 半導体セル形成方法及び集積回路
JPH08236615A (ja) 誘電体分離基板及びその製造方法
JPH09306865A (ja) 半導体装置の製造方法
JPS60193324A (ja) 半導体基板の製造方法
US3770520A (en) Production of semiconductor integrated-circuit devices
JPS60154638A (ja) 半導体装置の製造方法
JPS62160718A (ja) 半導体デバイスの製造方法
JPH06188198A (ja) エピタキシャル成長法
JPH049371B2 (enrdf_load_stackoverflow)
JPS58168260A (ja) 半導体集積回路装置およびその製造方法
US4105476A (en) Method of manufacturing semiconductors
JPS5917529B2 (ja) 半導体装置の製造方法
JPH0974055A (ja) 複合半導体基板