JPS6361120U - - Google Patents
Info
- Publication number
- JPS6361120U JPS6361120U JP15520786U JP15520786U JPS6361120U JP S6361120 U JPS6361120 U JP S6361120U JP 15520786 U JP15520786 U JP 15520786U JP 15520786 U JP15520786 U JP 15520786U JP S6361120 U JPS6361120 U JP S6361120U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- cvd apparatus
- mounting table
- vertical cvd
- sample mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案による一実施例の縦型ＣＶＤ装
置を示す概要図、第２図は従来の縦型ＣＶＤ装置
を示す概要図、である。
図において、１は石英管、２は試料載物台、３
は制風筒、４は試料、５はガス導入管、５ａは導
入口、６はガス排出管、６ａは排出口、を示す。
FIG. 1 is a schematic diagram showing a vertical CVD apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional vertical CVD apparatus. In the figure, 1 is a quartz tube, 2 is a sample stage, and 3 is a quartz tube.
4 indicates a wind suppressor, 4 indicates a sample, 5 indicates a gas inlet pipe, 5a indicates an inlet, 6 indicates a gas discharge pipe, and 6a indicates an outlet.
Claims (1)
ため、ガス導入管５から導入ガスが試料４の表面
に沿つて均等に流れるように、石英管１の内側の
試料載物台２の直近の周囲に円筒型の制風筒３を
配設し、前記試料載物台２の前記試料４を搭載す
る面の間隔を、前記制風筒３の内径と前記試料載
物台２の外径の差の二分の一以上とすることを特
徴とする縦型ＣＶＤ装置。 In order to improve the distribution of the grown film thickness in a vertical CVD apparatus, the area immediately around the sample stage 2 inside the quartz tube 1 is placed so that the introduced gas flows uniformly along the surface of the sample 4 from the gas introduction tube 5. A cylindrical wind suppressor 3 is disposed in the sample mounting table 2, and the distance between the surfaces of the sample mounting table 2 on which the sample 4 is mounted is determined by the difference between the inner diameter of the wind suppressor 3 and the outer diameter of the sample mounting table 2. 1. A vertical CVD apparatus characterized in that the vertical CVD apparatus is one-half or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986155207U JP2513180Y2 (en) | 1986-10-09 | 1986-10-09 | Vertical CVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986155207U JP2513180Y2 (en) | 1986-10-09 | 1986-10-09 | Vertical CVD device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6361120U true JPS6361120U (en) | 1988-04-22 |
| JP2513180Y2 JP2513180Y2 (en) | 1996-10-02 |
Family
ID=31075707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986155207U Expired - Lifetime JP2513180Y2 (en) | 1986-10-09 | 1986-10-09 | Vertical CVD device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2513180Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207332A (en) * | 1981-06-15 | 1982-12-20 | Toshiba Corp | Pressure reducing cvd device |
-
1986
- 1986-10-09 JP JP1986155207U patent/JP2513180Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207332A (en) * | 1981-06-15 | 1982-12-20 | Toshiba Corp | Pressure reducing cvd device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2513180Y2 (en) | 1996-10-02 |