JPS6360278A - Apparatus for preparing multi-layered thin film - Google Patents
Apparatus for preparing multi-layered thin filmInfo
- Publication number
- JPS6360278A JPS6360278A JP61203616A JP20361686A JPS6360278A JP S6360278 A JPS6360278 A JP S6360278A JP 61203616 A JP61203616 A JP 61203616A JP 20361686 A JP20361686 A JP 20361686A JP S6360278 A JPS6360278 A JP S6360278A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- multilayer thin
- wall
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 21
- 229910052721 tungsten Inorganic materials 0.000 description 21
- 239000010937 tungsten Substances 0.000 description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910052799 carbon Inorganic materials 0.000 description 19
- 238000000151 deposition Methods 0.000 description 9
- 230000002265 prevention Effects 0.000 description 9
- 239000000470 constituent Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000000181 anti-adherent effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical class [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、基板上に金屈酸化物や半導体などの材料の多
層薄膜を形成するのに用いる９７層薄膜作製装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a 97-layer thin film manufacturing apparatus used to form a multilayer thin film of materials such as gold oxides and semiconductors on a substrate.
［従来の技術］
基板上に２種頚以上の物質を積層させた多層薄膜を作製
する装置としては、たとえは第６図に示すように、堆積
粒子の供給睡を複数個持つ蒸着装置やスパッタ蒸着装置
等が一般に用いられている。[Prior Art] As an apparatus for producing a multilayer thin film in which two or more kinds of substances are laminated on a substrate, for example, as shown in FIG. Vapor deposition equipment and the like are generally used.
第６図において、１は真空槽、２はこの真空４ｆ！１内
に配量した回転型基板ポルクーであり、このホルダー２
の上に基板３および４を載置する。５および６は、真空
槽１内に配置され、それぞれ、基板３および４上へ堆積
する粒子を供給する堆積粒子の供給源としてのターケン
トである。７および８は、それぞれ、ターゲット５およ
び６からの堆積粒子の蒸発路に配置され、堆積：粒子の
供給を制御するよう開閉するシャッターである。９は徘
気ポンプである。１０および１１は、それぞれ、ターゲ
ット５および６に対するターケラト電源１２および１３
からの電源併給をＩＩＪ御するマツチングボックスであ
る。In Figure 6, 1 is a vacuum chamber, 2 is this vacuum 4f! This is a rotary board Porku arranged in 1, and this holder 2
Substrates 3 and 4 are placed on top of the substrate. 5 and 6 are tarkents arranged in the vacuum chamber 1 and serving as a source of deposited particles for supplying particles to be deposited onto the substrates 3 and 4, respectively. Shutters 7 and 8 are arranged in the evaporation path of the deposited particles from the targets 5 and 6, respectively, and are opened and closed to control deposition and supply of particles. 9 is a wandering pump. 10 and 11 are Tarkerat power supplies 12 and 13 for targets 5 and 6, respectively.
This is a matching box that controls power supply from IIJ.
多層薄膜としては、通常、均一な膜厚を持つものが求め
られているが、このような均−Ｉ模厚の多層薄膜を作製
するためには、上記装置のホルダー２を回転させ、基板
３および４に公転運動を与え、第１の堆積粒子の供給源
５の直上に基板３および４が来たときに供給源５の第１
物質からなる第１層を基板３および４上に形成し、次い
で、この第１供給源５とは別の第２供給源６の直上に基
板３および４か来た時に第２係給源６の第２物質からな
る第２層を第１層の上に形成する。このような処理を順
次に繰返していき、第１および第２物質の多層薄膜を形
成していく方法が、最も一般に用いられている。A multilayer thin film is usually required to have a uniform thickness, but in order to fabricate such a multilayer thin film with a uniform thickness, the holder 2 of the above apparatus is rotated, and the substrate 3 is and 4, and when the substrates 3 and 4 come directly above the source 5 of the first deposited particles, the first
A first layer of material is formed on the substrates 3 and 4 and then a second supply source 6 is applied when the substrates 3 and 4 are directly above a second supply source 6 separate from the first supply source 5. A second layer of a second material is formed over the first layer. The most commonly used method is to sequentially repeat such processing to form a multilayer thin film of the first and second materials.
［発明が解決しようとする問題点コ
しかしながら、このような装置では、ターゲット５．６
からそのターゲット直上の基板方向へ向かう堆積粒子量
が最も多いものの、堆積粒子は、ターゲット５，６上の
あらゆる方向へ、例えばランベルトのコサインの法則に
従うような粒子密度分布て飛散していく。このため、複
数個の堆積粒子の供給源５および６からの粒子同士が一
部混合し、一方の供給源の物質からなる層の中に別の供
給源からの物質が混入してしまうおそれがある。[Problems to be Solved by the Invention] However, in such a device, the target 5.6
Although the largest amount of deposited particles is directed from the substrate toward the substrate directly above the target, the deposited particles scatter in all directions above the targets 5 and 6 with a particle density distribution that follows Lambert's cosine law, for example. For this reason, there is a risk that particles from the plurality of deposited particle sources 5 and 6 may be mixed with each other, and a material from another source may be mixed into a layer consisting of material from one source. be.
第６図に示したスパッタ蒸着装置を用いて、タングステ
ンとカーホンを交互に積層させた多層薄膜を作製し、オ
ージェ電子分光装置によりタングステン居中へのカーボ
ンの混入量およびカーホン層中へのタングステンの混入
量を調へた結果を第７図に示す。この第７図に示したよ
うに、タングステン層中へのカーボンの混入量は１８％
程度もあり、カーボン層中へのタングステンの混入量も
４％程度ある。カーボンは回りこみ易い性質を持つので
、タングステンよりも他の物質からなる層中への混入量
は一般に多い。このような混入がある場合、作製した多
層薄膜の光学定数等の物理定数は混入の無い場合の多層
薄膜の物理定数とは異なってしまう。このため、従来技
術では、設計値通りの光学特性等の物理特性を有する多
層薄膜を作製することが困難であった。A multilayer thin film in which tungsten and carphone were alternately laminated was prepared using the sputter deposition apparatus shown in Figure 6, and the amount of carbon mixed into the tungsten layer and the amount of tungsten mixed into the carphone layer were measured using an Auger electron spectrometer. Figure 7 shows the results of determining the amount. As shown in Figure 7, the amount of carbon mixed into the tungsten layer is 18%.
The amount of tungsten mixed into the carbon layer is about 4%. Since carbon has the property of being easy to wrap around, the amount of carbon mixed into a layer made of other substances is generally larger than that of tungsten. If such contamination exists, the physical constants such as optical constants of the produced multilayer thin film will differ from the physical constants of the multilayer thin film without contamination. Therefore, with the conventional techniques, it has been difficult to produce a multilayer thin film having physical properties such as optical properties as designed values.
そこで、本発明の目的は、上述した従来の欠点を解決し
、ある物質で構成される層中への他の層を構成する物質
の混入を減少させ、設計値通りの物理特性を示す多層薄
１模を作製することのできる装置を提供することにある
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned conventional drawbacks, reduce the mixing of substances constituting other layers into a layer composed of a certain substance, and create a multilayer thin film that exhibits physical properties as designed. The object of the present invention is to provide an apparatus capable of producing one model.
［問題点を解決するための手段］
このような目的を達成するために、本発明は、基板を載
置可能な基板ボルダ−を一定回転速度で回転させ、基板
上に、異なる物質で構成された複数の堆積粒子の供給源
からの堆積粒子をそれぞれ一定の周期で順次に交互に積
層させて多層薄膜を作も′Ｊする多層薄膜作製装置にお
いて、複数の堆積粒子の供給源の各々を壁で凹面して、
各供給源毎に独立した室を設け、室には基板方向にのみ
堆積粒子の飛散を許す窓を開けたことを特徴とする。[Means for Solving the Problems] In order to achieve such an object, the present invention rotates a substrate boulder on which a substrate can be placed at a constant rotation speed, and places a substrate made of different materials on the substrate. In a multilayer thin film manufacturing apparatus that fabricates a multilayer thin film by sequentially and alternately stacking deposited particles from a plurality of deposited particle supply sources at a fixed period, each of the plurality of deposited particle supply sources is connected to a wall. concave with
The present invention is characterized in that an independent chamber is provided for each supply source, and a window is opened in the chamber to allow the deposited particles to scatter only in the direction of the substrate.
ここで、壁が複数の堆積粒子の供給源の各々から基板の
近傍までの空間を覆い、堆積粒子の供給源からのｉ（Ｌ
禎粒子の蒸発路を開閉するためのシャッターを壁の中間
部分に配設するのが好適である。Here, a wall covers the space from each of the plurality of deposited particle sources to the vicinity of the substrate, and i(L
Preferably, a shutter for opening and closing the evaporation path of the particles is arranged in the middle part of the wall.
［作 用１
本発明では、堆積粒子の各供給源の周囲の空間を基板方
向を除いて互いに分離することにより、ある堆積粒子の
飛散領域と他の堆積粒子の飛散領域とが温容することが
少なくなる。[Function 1] In the present invention, by separating the spaces around each supply source of deposited particles from each other except in the direction of the substrate, a scattering region of one deposited particle and a scattering region of another deposited particle can be heated. becomes less.
しかしながら、この場合においても、防着壁の上方と基
板面との間にシャッターの開閉部分の空間を要するため
、この空間内で、従来よりは少ないが、各堆積粒子が相
互に混合することか考えられる。これを防ぐために、シ
ャッターを防着壁の中間に配置し、防着壁の上部を基板
の近傍まで延在させることにより、従来、シャッターが
艶面されていた基板直上の、堆積粒子の密度が高く、異
なる供給源からの堆積粒子同士が混合し易い空間が分離
され、しかもシャッターの位置がターゲットに近づく程
、ターケラト面に平行な方向に飛散ｉする堆積粒子の密
度は小さくなり、防着壁に開けたシャッター開閉口から
防着壁の外部へ飛び出す堆積粒子量が少ないことから、
シャッターが防着壁と基板との間にある場合よりも堆積
粒子の混合量を更に減少させることができる。However, even in this case, since a space is required between the upper part of the deposition barrier and the substrate surface for the opening/closing part of the shutter, each deposited particle may mix with each other within this space, although this is less than in the past. Conceivable. In order to prevent this, the shutter is placed in the middle of the anti-adhesive wall and the upper part of the anti-adhesive wall is extended to the vicinity of the substrate, thereby reducing the density of deposited particles directly above the substrate, where conventionally the shutter had a glossy surface. The space where the deposited particles from different sources can easily mix is separated, and the closer the shutter position is to the target, the smaller the density of the deposited particles scattered in the direction parallel to the tarkerat surface becomes. Because the amount of accumulated particles flying out of the barrier wall through the opening and closing of the shutter is small,
The amount of mixed deposited particles can be further reduced than when the shutter is located between the deposition prevention wall and the substrate.
［実施例］ 以下に、図面を参照して、本発明の詳細な説明する。[Example] The present invention will be described in detail below with reference to the drawings.
第１図に本発明多層薄膜作製装置の一実施例を示す。FIG. 1 shows an embodiment of the multilayer thin film manufacturing apparatus of the present invention.
第６図と同様の個所には同一符号を付することにする。The same parts as in FIG. 6 are given the same reference numerals.
ここで、ｌはステンレススチール製真空槽であり、ポン
プ９によって排気される。基板３および４は回転型基板
ホルダー２に装着される。Here, l is a stainless steel vacuum chamber, which is evacuated by a pump 9. Substrates 3 and 4 are mounted on a rotary substrate holder 2.
本発明では、ターゲット５と６との間を防着壁で区画し
、ターゲット５および６毎に独立の室１５および１６を
形成する。防着壁１４は堆積粒子の供給源である、たと
えばタングステンターゲット５とカーボンターゲット６
の周囲を覆い、各室１５．１６の上部にのみ基板方向に
のみ堆積粒子の飛散を許す窓１７および１８が開けであ
る。これら防着壁１４の構成材彩１としてはステンレス
スチールを用いることができる。In the present invention, targets 5 and 6 are partitioned by a deposition-preventing wall, and independent chambers 15 and 16 are formed for each target 5 and 6. The deposition prevention wall 14 is a source of deposited particles, for example, a tungsten target 5 and a carbon target 6.
Windows 17 and 18 are opened in the upper part of each chamber 15 and 16 to allow the deposited particles to scatter only in the direction of the substrate. Stainless steel can be used as the constituent material 1 of these deposition-proof walls 14.
この防５３ ｑ １４の上部には、プレスパック時にス
パッタされた粒子が基板３．４に到達することを防ぐシ
ャッター７および８を配置しである。ターゲット５．６
にはマッヂングボックス１０．１１およびターゲット電
諒１２． ＋３を接続し、放電を可能としている。Shutters 7 and 8 are arranged above the barrier 53 q 14 to prevent particles sputtered during press packing from reaching the substrate 3.4. target 5.6
The mating box 10.11 and the target telegram 12. +3 is connected to enable discharge.
本発明の具体例ては、基板３．４としては、たとえばＳ
ｉウェハを用いた。真空イ１５１内に后ガスを導入し、
１０−’Ｔｏｒｒの真空度に保ち、タングステンターゲ
ット５を１００ Ｗ、カーボンターゲット６を４００Ｗ
でスパッタし、タングステンとカーボンからなる多層薄
膜を作製した。In a specific embodiment of the present invention, the substrate 3.4 may be, for example, S
i wafer was used. After introducing gas into the vacuum 151,
Maintaining a vacuum of 10-'Torr, the tungsten target 5 was heated at 100 W, and the carbon target 6 was heated at 400 W.
A multilayer thin film made of tungsten and carbon was fabricated by sputtering.
この装置で作製した多層薄膜の各層における目的とした
構成物質以外の粒子の混合状態をオージェ電子分光装置
を用いて分析した結果を第２図に示す。第２図かられか
るように、タングステン層中へのカーボンの混入量は７
％程度以下であり、力
トシボン層中へのタングステンの混入量は０．５％程度
以下であった。FIG. 2 shows the results of analyzing the mixed state of particles other than the intended constituent material in each layer of the multilayer thin film produced using this apparatus using an Auger electron spectroscopy apparatus. As can be seen from Figure 2, the amount of carbon mixed into the tungsten layer is 7.
% or less, and the amount of tungsten mixed into the carbon layer was about 0.5% or less.
実施例２
第１図の実施例では、防着壁１４の上方と基板３．４と
の間にシャッター７．８の開閉部分の空間を設ける必要
があるので、この空間において、従来よりは僅かではあ
るが、各堆積粒子が相互に混合するおそれがある。Embodiment 2 In the embodiment shown in FIG. 1, it is necessary to provide a space for the opening/closing portion of the shutter 7.8 between the upper part of the shielding wall 14 and the substrate 3.4. However, there is a risk that the deposited particles may mix with each other.
そこで、このような状態を防止するようにした本発明の
他の実ｈ＆例を第３図に示す。すなわち、第３図の実施
例では、防着壁１９を基板３，４の近傍に至るまで延在
させ、以って、この防着壁１９がターゲット５．６から
基板３．４の近傍までの空間を独立に区画して、室２０
．２１を限界するようにする。防着壁１９の中間の部分
においてシャッター開閉用窓２２．２３をあけ、これら
窓２２．２３を介してシャッター７．８を開閉する構造
とする。その他の構造は第１図の実施例１と同様であり
、その説明はここでは省略する。FIG. 3 shows another example of the present invention which prevents such a situation. That is, in the embodiment shown in FIG. 3, the adhesion prevention wall 19 is extended to the vicinity of the substrates 3 and 4, so that the adhesion prevention wall 19 extends from the target 5.6 to the vicinity of the substrate 3.4. The space is divided into 20 rooms independently.
．． 21 is the limit. Shutter opening/closing windows 22.23 are opened in the middle part of the anti-corrosion wall 19, and the shutter 7.8 is opened/closed through these windows 22.23. The rest of the structure is the same as that of the first embodiment shown in FIG. 1, and the explanation thereof will be omitted here.
この装置を用いて、実施例１と同一スパッタ条件で、タ
ングステンとカーボンからなる多層薄膜を作製した。多
層薄膜の周期の長さはほぼ１０ｎｍで、タングステンと
カーボンの層厚比は４：６、周期数は２０とした。Using this apparatus, a multilayer thin film made of tungsten and carbon was produced under the same sputtering conditions as in Example 1. The period length of the multilayer thin film was approximately 10 nm, the layer thickness ratio of tungsten and carbon was 4:6, and the number of periods was 20.
作製した膜をオージェ電子分光装置により分析し、各層
中への他層の構成物質の混入量を調べた結果を第４図に
示す。第４図かられかるように、タングステン層内にカ
ーボンは２％程度しか混入せず、カーボン層内には０２
％程度以下のタングステンしか混入していなかった。The produced film was analyzed using an Auger electron spectrometer to determine the amount of constituent substances of other layers mixed into each layer. The results are shown in FIG. As can be seen from Figure 4, only about 2% of carbon is mixed in the tungsten layer, and 0.2% of carbon is mixed in the tungsten layer.
% or less of tungsten was mixed in.
このように作製したタングステンとカーホンからなる多
層薄膜の光学特性を調べるために、−例としてＸ線反射
率を測定したところ、第５図に示すように、タングステ
ンとカーボンの光学定数を用いて計算した反射プロファ
イルにほぼ一致するような実測値が得られた。このこと
は、各層中への他層の構成物質の混入量か少なく、理想
状態に近い光学特性を有する高品質の多層薄膜が作製で
きていることを示すものである。In order to investigate the optical properties of the multilayer thin film made of tungsten and carbon, we measured the X-ray reflectance, as shown in Figure 5, and calculated it using the optical constants of tungsten and carbon. Actual measurements were obtained that almost matched the reflection profile obtained. This indicates that a high quality multilayer thin film having optical properties close to ideal conditions can be produced with a small amount of constituent substances of other layers mixed into each layer.
［発明の効果］
以上説明したように、本発明ては、堆積粒子の供給源ご
とに独立した室を設け、その室を構成する防着壁のうち
基板方向にだけ堆積粒子の飛散用の窓を開口することに
よって、異なる物質の堆積粒子の混合量を減少させるこ
とが可能になる。[Effects of the Invention] As explained above, in the present invention, an independent chamber is provided for each supply source of deposited particles, and a window for scattering of deposited particles is provided only in the direction of the substrate in the deposition prevention wall that constitutes the chamber. By opening the holes, it becomes possible to reduce the amount of mixing of deposited particles of different substances.
また、本発明では、防着壁を基板の近傍まで延在させ、
防着壁の中間にシャッターを入れることにより、基板と
防着板との間のシャッター開閉動作に必要な空間も減少
させ、堆積絃子間の混合量を減少させることが可能にな
る。すなわち、この場合には、従来、シャッターが配属
されていた基板直上の堆積粒子の密度が高く、異なる供
給源からの堆積粒子同士が混合し易い空間が分離され、
しかもシャッターの位置がターゲットに近づく程、ター
ゲツト面に平行な方向に飛散する堆積粒子の密度は小さ
くなり、防着壁に開けたシャッタ・−開閉口から防着壁
の外部へ飛び出す堆積粒子量か少ないことから、シャッ
ターが防着壁と基板との間にある場合よりも堆積粒子の
混合量を更に減少させることができる。Further, in the present invention, the deposition prevention wall is extended to the vicinity of the substrate,
By inserting a shutter in the middle of the deposition prevention wall, it is possible to reduce the space required for opening and closing the shutter between the substrate and the deposition prevention plate, and to reduce the amount of mixture between the deposited meshes. That is, in this case, the space where the density of deposited particles directly above the substrate to which the shutter was conventionally placed is high and deposited particles from different sources are likely to mix is separated,
Moreover, the closer the position of the shutter is to the target, the smaller the density of the deposited particles scattered in the direction parallel to the target surface becomes. Since the number of particles is small, the amount of mixed deposited particles can be further reduced compared to when the shutter is located between the deposition prevention wall and the substrate.
このように、本発明によれば、各層内に多層の構成粒子
の混合量の少ない高品質の多層薄膜を作製することがで
きる。As described above, according to the present invention, it is possible to produce a high-quality multilayer thin film in which the amount of constituent particles of the multilayer mixed in each layer is small.
第１図は本発明の一実施例を示す断面図、第２図は第１
の実施例で作製したタングステン／カーボン多層薄膜の
オージェ電子分光装置による深さ方向分析結果を示す特
性図、
第３図は本発明の他の実施例を示す断面図、第４図は第
２の実施例により作製したタングステン／カーボン多層
薄膜のオージェ電子分光装置による深さ方向分析結果を
示す特性図、第５図は第２の実施例で作製したタングス
テン／カーボン多層薄膜のＸ線反射プロファイルを示す
特性図、
第６図は複数個の堆積粒子の供給源と回転型基板ホルダ
ーを備えた従来の多層薄膜作製装置の一例を示す断面図
、
第７図は第６図に示した従来の多層′ｉ′＃膜作製装置
により作製したタングステン／カーボン多層薄膜のオー
ジェ電子分光装置による深さ方向分析結果を示す特性図
である。
■・・・真空槽、
２・・・回転型基板ホルダー、
３ ・・・基才反、
４・・・基板、
５・・・堆積粒子の供給源（ターゲット）、６・・・堆
積粒子の供給源（ターゲット）、７・・・シャッター、
８・・・シャッター、
９・・・排気ポンプ、
１０・・・マツチングボックス、
ｔｉ・・・マツチングボックス、
１２・・・ターゲット電ｉ原、
１３・・・ターゲット電【原、
１４、１９・・・防着壁、
！５．１５．２０．２１・・・室、
１７、１８．２２．２３・・・シャッター開閉用窓。
Ｉり搾
本殆明災文乞イダ１］の岬ｍｌ凹
第ユ図
本宛−明史大己例の持・注口
ネ硝明夫力乞夜１ｊのｚ午ｉＨ凶
７も凋５−月大太とイノｒＪｙ）謔千斗主図第４図
０ ０．２５ ０．５回前
Ａ度２ｅ＜Ｌ）
木屑５シ月大プヒ例のＸ 釆特反身十フ・口）イノし４
奇利口口第５図
４丸東存Ｊの約−面図
ィ足来イ列の竹小主βａ
第７図FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
FIG. 3 is a cross-sectional view showing another example of the present invention, and FIG. Characteristic diagram showing the depth direction analysis results of the tungsten/carbon multilayer thin film produced in Example 2 using an Auger electron spectroscopy device. Figure 5 shows the X-ray reflection profile of the tungsten/carbon multilayer thin film produced in the second example. 6 is a cross-sectional view showing an example of a conventional multilayer thin film manufacturing apparatus equipped with a plurality of deposited particle supply sources and a rotating substrate holder. FIG. FIG. 2 is a characteristic diagram showing the results of depth direction analysis using an Auger electron spectrometer of a tungsten/carbon multilayer thin film produced using the i'# film production apparatus. ■...Vacuum chamber, 2...Rotary substrate holder, 3...Basic reactor, 4...Substrate, 5...Deposited particle supply source (target), 6...Deposited particle source Supply source (target), 7...Shutter, 8...Shutter, 9...Exhaust pump, 10...Matching box, ti...Matching box, 12...Target electric source, 13... Target electric [hara, 14, 19... anti-adhesive wall, ! 5.15.20.21... Room, 17, 18.22.23... Window for opening and closing shutter. The cape ml concave of the book 1] of the misaki ml concave book addressed to Meishi Taiki example of the holding and spout of the glass Akio power request night 1 j the z o i H 7 also 5 5 - Tsukidai Futoshi to Ino rJy) Chisento main figure 4 0 0.25 0.5 times A degree 2e<L) Wood shavings 5 Shizuki Daipuhi example's
Kiriguchiguchi Figure 5 - Approximately - side view of the 4-maru east existing J - Bamboo holder βa of the foot row A Figure 7
Claims (1)
転させ、前記基板上に、異なる物質で構成された複数の
堆積粒子の供給源からの堆積粒子をそれぞれ一定の周期
で順次に交互に積層させて多層薄膜を作製する多層薄膜
作製装置において、前記複数の堆積粒子の供給源の各々
を壁で区画して、各供給源毎に独立した室を設け、前記
室には基板方向にのみ堆積粒子の飛散を許す窓を開けた
ことを特徴とする多層薄膜作製装置。 ２）前記壁が前記複数の堆積粒子の供給源の各々から前
記基板の近傍までの空間を覆い、前記堆積粒子の供給源
からの堆積粒子の蒸発路を開閉するためのシャッターを
前記壁の中間部分に配設したことを特徴とする特許請求
の範囲第１項記載の多層薄膜作製装置。[Scope of Claims] 1) A substrate holder on which a substrate can be mounted is rotated at a constant rotation speed, and deposited particles from a plurality of deposited particle sources each composed of different substances are deposited onto the substrate at a constant rate. In a multilayer thin film production apparatus for producing a multilayer thin film by sequentially stacking layers alternately in a periodic manner, each of the supply sources of the plurality of deposited particles is partitioned by a wall to provide an independent chamber for each supply source, and A multilayer thin film manufacturing device is characterized in that it has a window that allows the scattering of deposited particles only in the direction of the substrate. 2) The wall covers a space from each of the plurality of sources of deposited particles to the vicinity of the substrate, and a shutter for opening and closing an evaporation path for deposited particles from the sources of deposited particles is provided in the middle of the wall. 2. The multilayer thin film manufacturing apparatus according to claim 1, wherein the multilayer thin film manufacturing apparatus is arranged in a portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61203616A JPH0791646B2 (en) | 1986-09-01 | 1986-09-01 | Multi-layer thin film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61203616A JPH0791646B2 (en) | 1986-09-01 | 1986-09-01 | Multi-layer thin film manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6360278A true JPS6360278A (en) | 1988-03-16 |
| JPH0791646B2 JPH0791646B2 (en) | 1995-10-04 |
Family
ID=16476993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61203616A Expired - Lifetime JPH0791646B2 (en) | 1986-09-01 | 1986-09-01 | Multi-layer thin film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0791646B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6383261A (en) * | 1986-09-26 | 1988-04-13 | Tokyo Electron Ltd | Sputtering device |
| JPS63103059A (en) * | 1986-10-17 | 1988-05-07 | Nippon Telegr & Teleph Corp <Ntt> | Apparatus for preparing multi-layered thin film |
| JPS6487768A (en) * | 1987-09-29 | 1989-03-31 | Hitachi Ltd | Multifunction vacuum plating device |
| JPH03223460A (en) * | 1990-01-25 | 1991-10-02 | Agency Of Ind Science & Technol | Method for depositing thin film |
| WO2010061603A1 (en) * | 2008-11-28 | 2010-06-03 | キヤノンアネルバ株式会社 | Film forming apparatus and method of manufacturing electronic device |
| WO2011077653A1 (en) * | 2009-12-25 | 2011-06-30 | キヤノンアネルバ株式会社 | Method for manufacturing electronic device, and sputtering apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5331829A (en) * | 1976-08-31 | 1978-03-25 | Murata Machinery Ltd | Piecing method of air spinning equipment |
-
1986
- 1986-09-01 JP JP61203616A patent/JPH0791646B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5331829A (en) * | 1976-08-31 | 1978-03-25 | Murata Machinery Ltd | Piecing method of air spinning equipment |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6383261A (en) * | 1986-09-26 | 1988-04-13 | Tokyo Electron Ltd | Sputtering device |
| JPS63103059A (en) * | 1986-10-17 | 1988-05-07 | Nippon Telegr & Teleph Corp <Ntt> | Apparatus for preparing multi-layered thin film |
| JPS6487768A (en) * | 1987-09-29 | 1989-03-31 | Hitachi Ltd | Multifunction vacuum plating device |
| JPH03223460A (en) * | 1990-01-25 | 1991-10-02 | Agency Of Ind Science & Technol | Method for depositing thin film |
| WO2010061603A1 (en) * | 2008-11-28 | 2010-06-03 | キヤノンアネルバ株式会社 | Film forming apparatus and method of manufacturing electronic device |
| JP4598161B2 (en) * | 2008-11-28 | 2010-12-15 | キヤノンアネルバ株式会社 | Film forming apparatus and electronic device manufacturing method |
| JPWO2010061603A1 (en) * | 2008-11-28 | 2012-04-26 | キヤノンアネルバ株式会社 | Film forming apparatus and electronic device manufacturing method |
| US8663437B2 (en) | 2008-11-28 | 2014-03-04 | Canon Anelva Corporation | Deposition apparatus and electronic device manufacturing method |
| US9593412B2 (en) | 2008-11-28 | 2017-03-14 | Canon Anelva Corporation | Deposition apparatus and electronic device manufacturing method |
| WO2011077653A1 (en) * | 2009-12-25 | 2011-06-30 | キヤノンアネルバ株式会社 | Method for manufacturing electronic device, and sputtering apparatus |
| JP5658170B2 (en) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
| US8992743B2 (en) | 2009-12-25 | 2015-03-31 | Canon Anelva Corporation | Sputtering method and sputtering apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0791646B2 (en) | 1995-10-04 |
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