JPS63103059A - Apparatus for preparing multi-layered thin film - Google Patents

Abstract

PURPOSE:To prevent the degradation in the purity of multi-layered thin films by enclosing targets with deposition-proof walls and using a shutter having specific construction at the time of forming the multi-layered thin films by the different targets on the surfaces of substrates while rotating the substrates. CONSTITUTION:The multi-layered thin films are formed on the surfaces of the substrates 3 by the plural targets 4, 4 consisting of different materials while a holder 2 mounted with the plural substrates 3 are rotated in a vacuum vessel 1. The targets are covered with the deposition-proof walls 9 and the shutter 5 for shutting the vapor deposition particles from the targets is opened and closed by the apertures 10 of the deposition-proof walls 9 in order to prevent the intrusion of the vapor deposition particles by the other targets into the respective thin films in this case. The shutter 5 is formed to the geometry which is partly parallel in the width of the direction perpendicular to the opening and closing direction thereof. Said width is made slightly smaller than the width of the apertures 10 so that the part of said width exists in the aperture 10 position of the deposition-proof walls 9 in the stop position after the shutter is opened. In addition, a side face edge 31 is provided to the top end thereof and chimneys 11 are provided above the shutter and the deposition-proof walls, by which the leaking and sticking of the vapor deposition particles from the targets onto the other substrate surfaces are prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a multilayer thin film manufacturing apparatus used for manufacturing a multi-Rr4 film of materials such as metals, oxides, and semiconductors on a substrate.

<Prior art> As an apparatus for producing a multilayer RI4 film in which two or more types of substances are laminated on a substrate, a vapor deposition apparatus equipped with a rotating substrate holder and a plurality of supply sources for deposited particles as shown in FIG. 6 is used.・Sputter deposition equipment etc. are generally used. In the figure, 21 is a stainless steel vacuum chamber, 22 is a rotating substrate holder, 23 is a substrate, 24 is a source of deposited particles, 2
5 is a shutter, 26 is a pump, 27 is a matching box, and 28 is a power source.

A multilayer R4 film is usually required to have a uniform thickness, but in order to create a multilayer thin film with such a uniform thickness, the substrate 23 is given orbital motion and a certain deposition particle source 24A is placed directly above the supply source 24A. When the substrate 23 comes, iAl consisting of the material of the source 24A is formed on the substrate 23, and then this source 24
When the substrate 23 comes directly above the supply source 24B, which is different from A, the layer B1 made of the material of the supply source 24B is
form on top of. The most commonly used method is to repeat this process sequentially.

However, in such an apparatus, although the largest amount of deposited particles travels from the target toward the substrate 23 directly above the target, the deposited particles scatter in all directions on the target. For this reason, some of the particles from the supply source 24 of the plurality of deposited particles coalesce, and the substance from another supply source 24 is mixed into p made of a certain substance. Using the sputter deposition apparatus shown in FIG. 6, a multi-N thin film in which tungsten and carbon were alternately laminated was prepared, and the amount of carbon mixed into the tungsten layer was determined using an Auger electron spectrometer.
FIG. 7 shows the results of examining the amount of tungsten mixed into the carbon layer.

As shown in FIG. 7, the amount of carbon mixed into the tungsten layer is about 18%, and the amount of tungsten mixed into the carbon layer is also about 4%. In addition, we have developed an improved multilayer thin film production device (1) that separates the supply source of deposited particles into an independent room and has an anti-deposition wall with a window for scattering deposited particles only in the direction of the substrate (1). The deposition prevention wall covers the area around the source of the deposited particles, opens a window for scattering the deposited particles only in the direction of the substrate, covers the space from the source of the deposited particles to just above the substrate, and also opens and closes the evaporation path for the deposited particles. A multi-purpose shutter that opens and closes across the side of the barrier wall.
jr4 membrane fabrication device i! ! (2) etc., compared to the most commonly used multilayer thin film production equipment (compared to the above), the number of scattered particles is considerably reduced, but carbon and other particles that wrap around strongly go out of the adhesion barrier through gaps in the mist. Therefore, this reaches the surface of the substrate and the amount of contamination is not reduced sufficiently.

<Problems to be solved by the invention> Length f of the period produced using the apparatus of (1) and (2)
<10 nm, a tungsten:carbon NEJ ratio of 4:6, and a periodicity of 20 multi-rfJ thin films were analyzed using an Auger electron spectrometer to examine the amount of constituent materials of other layers mixed into each layer. In the device (2), about 7% of carbon is mixed in the tungsten layer, and about 0.5% of tungsten is mixed in the carbon layer, and in the device (2), about 2% of carbon is mixed in the tungsten layer. Approximately 0.2% tungsten was also mixed in the carbon layer. Usually, the shutter is circular (and when the shutter is closed, it is installed directly above the source of the deposited particles). Moreover, when producing a uniform film, the surface of the source of deposited particles facing the substrate is as large as the substrate used.Therefore, the shutter has a larger area than the source in order to prevent adhesion of sputtered particles during press sputtering. In order for such a shutter to cross the side of the deposition wall, the width of the shutter opening in the deposition wall must be large, and since there are multiple sources of deposited particles, as many openings and closing openings are required as there are multiple sources of deposited particles. becomes.

Normally, when the shutter is open, this shutter opening/closing opening is open, so some of the deposited particles pass through this shutter opening/closing opening and exit the anti-deposition wall, and some of them adhere to the substrate. It happens. When such contamination exists, the physical constants such as optical constants of the produced multilayer thin film are different from the physical constants of a multilayer thin film without any contamination. For this reason, in the prior art, multilayer r4 having physical properties such as optical properties as designed values.
It was difficult to obtain a membrane.

The present invention solves the above-mentioned conventional drawbacks, reduces the mixing of substances constituting other layers into a layer composed of a certain substance, and creates a multi-Nj'fil film that exhibits physical properties as designed. The purpose is to provide a device for manufacturing.

Means for Solving the Problems> The present invention provides a deposition prevention wall that covers the periphery of the supply source of deposited particles in the vacuum chamber of a multilayer thin film production apparatus and has a window for scattering the deposited particles only in the direction of the substrate. A multi-layer r4I with a basic structure of , and B, which has a window for opening and closing the shutter on the side of the barrier and the barrier, and has a structure in which the shutter opens and closes across the barrier and the wall.
I! In the J manufacturing device, the shape of the shutter is such that the width in the direction perpendicular to the opening/closing direction of the shutter is partly parallel, and this width is slightly narrower than the width of the opening/closing opening of the shutter, and the shutter stops at the position after opening the shutter. The above-mentioned width part is located at the position of the shutter opening/closing opening of the shielding wall, and a side edge having the same curved surface as the inner wall curved surface of the shielding wall is attached to the end of the shutter, and the upper part of the shutter is A cylindrical chimney is installed between the window and the window for scattering accumulated particles, and a second shutter that moves in synchronization with the shutter is installed directly above the chimney of the deposition wall.

Function: The shape of the shutter is partially parallel to the width perpendicular to the opening/closing direction of the shutter, and this width is made slightly narrower than the convergence of the shutter opening/closing opening, and the width is made slightly narrower than the convergence of the shutter opening/closing opening. If the above-mentioned width part is located at the position of the shutter opening of the deposition wall, the accumulated particles that would have come out of the deposition wall from the shutter opening will be prevented by this shutter and will not pass through this opening. The amount of deposited particles reaching the substrate surface is significantly reduced. In addition, if a side edge with the same curved surface as the inner wall curved surface of the protection wall is attached to the end of the shutter, the shutter opening/closing opening will be blocked by this side edge when the shutter is opened, and the shutter opening/closing opening will come out to the outside of the shielding wall. The shutter prevents the deposited particles from passing through the opening and closing port and reaching the substrate surface, thereby greatly reducing the number of deposited particles that would have passed through the opening and closed. In addition, if a chimney is installed between the window directly above the shutter and the window for scattering accumulated particles on the anti-accumulation wall, it will not only prevent the accumulated particles from flowing out to the outside of the anti-accumulation wall by passing through the opening when the shutter is opened. Even when the shutter is closed, the chimney prevents the accumulated particles from surrounding the shutter, thereby reducing the amount of accumulated particles coming out of the deposition-preventing wall.

Further, if a second shutter is further provided directly above the chimney, most of the minute amount of deposited particles will also adhere to the second shutter, further greatly reducing the amount of deposited particles reaching the substrate surface.

Embodiments FIG. 1 shows a cross section of a multilayer thin film manufacturing apparatus according to an embodiment of the first invention. In the figure, 1 is a stainless steel vacuum chamber, 2 is a rotating substrate holder, 3 is a substrate, and 4 is a stainless steel vacuum chamber.
is the source of deposited particles, 5 is the shutter, 6 is the pump, 7
8 is a matching box, 8 is a target power source, and 9 is a barrier wall.

In FIG. 1, the deposition prevention wall 9 surrounds the supply source 4 of deposited particles, and a window 13 for deposited particle scattering is opened only in the direction of the substrate 3, and a deposited particle evaporation path is provided on the side surface of the deposition prevention wall 9. An opening 10 is provided for the opening/closing shutter 5 to cross.

FIG. 2 shows a schematic configuration of the positional relationship between the deposition wall 9 and the shutter 5. As shown in FIG. In the present invention, the shape of the shutter 5 is such that the width in the direction perpendicular to the opening/closing direction of the shutter 5 is partially parallel, and this width is slightly narrower than the width of the shutter opening 10, and the width of the shutter 5 after the shutter is opened is a comb. Since the above-mentioned width portion is located at the shutter opening 10 of the deposition prevention wall 9 at the stop position, the accumulated particles leaking out of the deposition prevention wall 9 from the shutter opening 10 are prevented by the shutter 5. As a result, the amount of deposited particles that have passed through the shutter opening 10 and arrived on the surface of the substrate 3 is significantly reduced.

A multilayer R4 film was manufactured using a multilayer R4 film manufacturing apparatus having the structure of the present invention. For the substrate 23, an S1 wafer was used. Ar gas was introduced into vacuum chamber 1, and 5 x 10-'
Maintaining a vacuum level of Torr, the tungsten target was
00W, carbon target sputtered at 400W,
A multilayer thin film consisting of tungsten and carbon was fabricated.

The period length of the produced multilayer R film was approximately 10 nm, the layer thickness ratio of tungsten to carbon was 4:6, and the number of periods was 20. As a result of analyzing the culprit state of particles other than the intended constituent material in each layer of this multilayer thin film using a secondary ion mass spectrometer, it was found that the amount of carbon mixed into the tungsten layer was about 1.6%. The amount of tungsten mixed into the carbon layer was about 0.15%. This value is smaller than that when the barrier wall with shutter mechanism of the present invention is not used.

In order to investigate the optical properties of the multilayer thin film made of tungsten and carbon, we measured the X-ray reflectance as an example. Actual measurements were obtained in which the deviation was only about 0.7% at the peak position, and about 0.02"t, and the deviation was in good agreement with each other. This indicates that the amount of constituent substances of other layers mixed into each layer. This shows that a high-quality multilayer RI9 film with optical characteristics close to the ideal state was fabricated.

FIG. 3 is a diagram showing an embodiment of the second invention. In this embodiment, in addition to the device of the first invention, a side edge 3 is provided at the end of the shutter 5 which has the same curved surface as the inner wall curved surface of the protection wall 9.
1, and the structure is such that when the shutter 5 is opened, the gap between the shutter opening 10 of the anti-corrosion wall 9 and the end of the shutter 5 is closed. Therefore, the shutter opening 10
The accumulated particles that had come out of the deposition prevention wall 9 are blocked by the side edge 317 of the shutter 5 and the shutter opening 10
The amount of deposited particles that have passed through and reached the surface of the substrate 3 is significantly reduced.

A multilayer thin film with a period length of 10 nm, a layer thickness ratio of tungsten and carbon of 4:6, and a period number of 20 was manufactured using a multilayer R4 film manufacturing apparatus equipped with an anti-adhesion wall under the same manufacturing conditions as the first invention. . As a result of analyzing the mixed state of deposited particles other than the predetermined constituent substances in each layer of this multilayer R film using a secondary ion mass spectrometer, the amount of carbon mixed into the tungsten layer was about 1.3%, and the amount of carbon mixed into the tungsten layer was about 1.3%. The amount of tungsten mixed into the layer was about 0.12%, and the amount of constituent materials of other layers mixed into each layer was reduced compared to Mo-Kumei.

FIG. 4 shows a cross section of a multilayer rNj film manufacturing apparatus according to an embodiment of the third invention. In addition to the first and second inventions, the apparatus of the present invention has a cylindrical chimney 11 installed between the upper part of the shutter 5 and the window 13 for scattering accumulated particles. Therefore, it is possible to prevent accumulated particles not only from flowing out of the deposition prevention wall 9 from the shutter opening 10 when the shutter 5 is opened, but also from coming around from around the shutter 5 when the shutter 5 is closed.

Using this apparatus, the manufacturing conditions were the same as in the first invention, the period length was 10 nm, and the layer thickness ratio of tungsten and carbon was 4:
6. A multilayer thin film with a periodicity of 20 was prepared. As a result of analyzing the mixed state of deposited particles other than the predetermined constituent substances in each layer of this multilayer thin film using a secondary ion mass spectrometer,
The amount of carbon mixed into the tungsten layer is about 0.7%, the amount of tungsten mixed into the carbon layer is about 0.1%, and the amount of constituent materials of other layers mixed into each layer is higher than in the first invention. decreased.

FIG. 5 shows a cross section of a multilayer thin film manufacturing apparatus according to an embodiment of the fourth invention. The device of the present invention further includes a second shutter 32 directly above the chimney 11 in the embodiment of the third invention.
The second shutter 32 opens and closes in synchronization with the shutter 5.

With this structure, when the second shutter 32 is closed, a small amount of accumulated particles can pass through the small gap between the chimney 11 and the shutter 5 located directly below the chimney 11 and reach the surface of the substrate 3. You can prevent it from happening.

Using this apparatus, the manufacturing conditions were the same as in the first invention, the period length was about 10 nm, and the layer thickness ratio of tungsten and carbon was 4.
6. A multilayer thin film with a periodicity of 20 was produced. As a result of analyzing the mixed state of deposited particles other than the predetermined constituent substances in each layer of this multilayer thin film using a secondary ion mass spectrometer, it was found that the amount of carbon mixed into the tungsten layer was about 0.2%. The amount of tungsten mixed into the carbon layer is 0.
．． It was about 0.02%. In order to investigate the optical properties of the multilayer thin film made of tungsten and carbon, we measured the X-ray reflectance as an example. With the multilayer R film production device, the amount of constituent materials of other layers mixed into each layer is extremely small compared to the conventional device, resulting in a high quality multilayer T4 with almost ideal optical properties. This shows that the membrane has been produced.

<Effects of the Invention> As explained above, in the present invention, in order to fabricate a multi-Nr4 film in which two or more types of substances are alternately laminated on a substrate, it is necessary to cover the periphery of the supply source of deposited particles in a vacuum chamber. A multilayer thin film production device in which a deposition barrier is provided with a window for scattering deposited particles only in the direction of the substrate, a window for opening and closing a shutter is opened on the side of the deposition barrier, and the shutter opens and closes across the deposition barrier. In,
(1) The shape of the shutter is such that the width in the direction perpendicular to the opening/closing direction of the shutter is partially parallel, and this width part is slightly smaller than the opening width of the shutter opening/closing opening, and the shutter stops at the shutter stop position after opening the shutter. (2) The shutter has a shape with a side edge having the same curvature as the inner wall of the shield wall at the end of the shutter; ,(3)
By providing a chimney between the shutter and the window opened at the top of the anti-deposition wall for scattering deposited particles, and (4) installing a second shutter directly above the chimney, the deposits coming out of the anti-deposition wall can be prevented. The amount of particles is reduced. Therefore, the amount of the deposited particles reaching the substrate surface is reduced, and the amount of constituent materials of other layers mixed into a given layer is reduced. Therefore, it becomes possible to produce a high-quality multilayer thin film having physical constants such as optical constants close to designed values.

2 is a conceptual diagram showing the positional relationship between the barrier wall and the shutter, and FIG. 3 is a cross-sectional view of the tungsten manufacturing device having a side edge at the end according to an embodiment of the second invention. 2 is a graph showing the results of depth direction analysis of a carbon multilayer thin film using an Auger electron spectrometer.

In the drawings, 1... Vacuum chamber, 2... Rotating substrate holder, 3... Substrate, 4... Supply source (target) of deposited particles, 5... Shutter, 6... Exhaust pump , 7... Matching box, 8... Target power supply, 9... Anti-deposition wall, 10... Shutter opening, 11... Chimney-1 13... Window for scattering deposited particles, 31. ...Side edge, 32...Second shutter.

Claims (4)

[Claims] (1) The substrate holder is rotated at a constant speed, and deposited particles made of different substances from a plurality of deposited particle sources are sequentially and alternately stacked on the substrate at a constant period to create a multilayer thin film. At this time, a deposition prevention wall is installed that covers the periphery of the supply source of deposited particles in the vacuum chamber and has a window for the deposited particle scattering only in the direction of the substrate, and a shutter for opening and closing of the deposited particle evaporation path is installed on the side of this deposition prevention wall. In a multilayer thin film manufacturing apparatus having a structure in which the shutter opens and closes across the deposition wall, the width of the shutter in the direction perpendicular to the opening/closing direction is partially parallel, and this width portion is slightly smaller than the opening width of the shutter opening/closing opening in the deposition prevention wall. 1. A multilayer thin film manufacturing apparatus characterized in that the width is so narrow as to be located at the shutter opening/closing opening of the deposition-preventing wall when the shutter is at a stop position when the shutter is opened. (2) The substrate holder is rotated at a constant speed, and deposited particles made of different substances from a plurality of deposited particle sources are sequentially and alternately stacked on the substrate at a constant period to create a multilayer thin film. At this time, a deposition prevention wall is installed that covers the periphery of the supply source of deposited particles in the vacuum chamber and has a window for the deposited particle scattering only in the direction of the substrate, and a shutter for opening and closing of the deposited particle evaporation path is installed on the side of this deposition prevention wall. In a multilayer thin film manufacturing apparatus having a structure in which the shutter opens and closes across the deposition wall, the width of the shutter in the direction perpendicular to the opening/closing direction is partially parallel, and this width portion is slightly smaller than the opening width of the shutter opening/closing opening in the deposition prevention wall. The width of the shutter is narrow so that when the shutter is at a stop position when the shutter is opened, the part of the width is located at the opening/closing opening of the shutter of the shielding wall, and the end of the shutter is provided with a side edge having the same curved surface as the inner wall curved surface of the shielding wall. 1. A multilayer thin film production device characterized by having a structure that fills the gap between the shutter opening/closing opening of the anti-corrosion wall and the shutter end when the shutter is opened. (3) The substrate holder is rotated at a constant speed, and deposited particles made of different substances from a plurality of deposited particle sources are sequentially and alternately stacked on the substrate at a constant period to create a multilayer thin film. At this time, a deposition prevention wall is installed that covers the periphery of the supply source of deposited particles in the vacuum chamber and has a window for the deposited particle scattering only in the direction of the substrate, and a shutter for opening and closing of the deposited particle evaporation path is installed on the side of this deposition prevention wall. In a multilayer thin film manufacturing apparatus having a structure in which the shutter opens and closes across the deposition wall, the width of the shutter in the direction perpendicular to the opening/closing direction is partially parallel, and this width portion is slightly smaller than the opening width of the shutter opening/closing opening in the deposition prevention wall. The width of the shutter is narrow so that when the shutter is at a stop position when the shutter is opened, the part of the width is located at the opening/closing opening of the shutter of the shielding wall, and the end of the shutter is provided with a side edge having the same curved surface as the inner wall curved surface of the shielding wall. It has a structure that fills the gap between the shutter opening/closing opening of the anti-corrosion wall and the shutter end when the shutter is opened.
A multilayer thin film production device characterized by a cylindrical chimney installed between the top of a shutter and a window for scattering accumulated particles. (4) The substrate holder is rotated at a constant speed, and deposited particles from a plurality of deposited particle sources composed of different substances are sequentially and alternately laminated on the substrate at a constant period to create a multilayer thin film. At this time, a deposition prevention wall is installed that covers the periphery of the supply source of deposited particles in the vacuum chamber and has a window for the deposited particle scattering only in the direction of the substrate, and a shutter for opening and closing of the deposited particle evaporation path is installed on the side of this deposition prevention wall. In a multilayer thin film manufacturing apparatus having a structure in which the shutter opens and closes across the deposition wall, the width of the shutter in the direction perpendicular to the opening/closing direction is partially parallel, and this width portion is slightly smaller than the opening width of the shutter opening/closing opening in the deposition prevention wall. The width of the shutter is narrow so that when the shutter is at a stop position when the shutter is opened, the part of the width is located at the opening/closing opening of the shutter of the shielding wall, and the end of the shutter is provided with a side edge having the same curved surface as the inner wall curved surface of the shielding wall. It has a structure that fills the gap between the shutter opening/closing opening of the anti-corrosion wall and the shutter end when the shutter is opened.
A cylindrical chimney is installed between the upper part of the shutter and a window for scattering accumulated particles, and a second shutter that moves in synchronization with the shutter is installed directly above the chimney of the anti-accumulation wall. Multilayer thin film production equipment.