JPS6359337A - Method and apparatus for treating exhaust gas - Google Patents
Method and apparatus for treating exhaust gasInfo
- Publication number
- JPS6359337A JPS6359337A JP61203993A JP20399386A JPS6359337A JP S6359337 A JPS6359337 A JP S6359337A JP 61203993 A JP61203993 A JP 61203993A JP 20399386 A JP20399386 A JP 20399386A JP S6359337 A JPS6359337 A JP S6359337A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- gas treatment
- spray
- jet
- speed jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 239000007921 spray Substances 0.000 claims abstract description 25
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 14
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 13
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 63
- 239000003595 mist Substances 0.000 claims description 14
- -1 SiH_4 Chemical class 0.000 claims description 10
- 150000007513 acids Chemical class 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical class 0.000 claims description 9
- 238000006386 neutralization reaction Methods 0.000 claims description 4
- 239000000428 dust Substances 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 229910004014 SiF4 Inorganic materials 0.000 abstract description 7
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005406 washing Methods 0.000 abstract description 7
- 239000003513 alkali Substances 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 2
- 230000003472 neutralizing effect Effects 0.000 abstract 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract 1
- 230000003301 hydrolyzing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 63
- 239000000843 powder Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- 240000001549 Ipomoea eriocarpa Species 0.000 description 1
- 235000005146 Ipomoea eriocarpa Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、５ｉ１１ｔｅｌ、、５ｉＣ１，、ＳｉＦ４．
ＳｉＨ４などハロゲンを含む珪素化合物やｌ１Ｃ１，Ｈ
Ｐ、ＣＩ２などの酸分を含む排ガスをトラブルなく高効
率で処理するための排ガスの処理方法とその装置の改良
に関するものであり、更に詳述すれば、第１発明は、５
ｉＨ１ＣＩｔ、ＳｉＣ＋４．ＳｉＦ、、ＳｉＨ，などハ
ロゲンを含む珪素化合物やＨＣＩ 、ＩＩＦ、Ｃｌ２な
どの酸分を含む排ガスに水酸化カリウムや水酸化ナトリ
ウムなどのアルカリ成分を含む洗浄液（Ｃ）を高速ジェ
ット噴霧し、高速ジェット噴霧（１）内で排ガスのアル
カリ洗浄液（Ｃ）による加水分解反応や中和反応を促進
させる事を特徴とする排ガスの処理方法に係り、第２発
明は、高圧でアルカリ洗浄液（Ｃ）を噴出させて細かい
水滴の高速ジェット噴霧（１）を形成する高圧噴出ノズ
ル（２）と、ＳｉＨ＊Ｃ１ｔ、５ｉＣ１４，５ｉＦｎ、
ＳｉＨ４などハロゲンを含む珪素化合物やＩＩｃＩ、Ｉ
Ｐ、Ｃ１，などの酸分を含む未処理排ガスの排ガス導入
口（３）とを洗浄室（４）に設け、洗浄室（４）の出口
に続けて洗浄室（４）より断面積の小さなスロート部（
５）を設け、スロート部（５）に続けて次第にその断面
積を増加するスカート部（６）を設けて洗浄室（４）と
スロート部（５）とスカート部（６）とでジェットスク
ラバ本体（＾）を構成し、ジェットスクラバ本体（＾）
の下方にてスカート部（６）に接続せる液受１’ｆｆ（
Ｂ）を設けて成る事を特徴とする排ガス処理装置に係る
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is directed to 5i11tel, 5iC1, SiF4.
Silicon compounds containing halogens such as SiH4 and l1C1,H
The first invention relates to an exhaust gas treatment method and an improvement of the apparatus for treating exhaust gas containing acids such as P and CI2 with high efficiency and without trouble.
iH1CIt, SiC+4. A cleaning liquid (C) containing alkaline components such as potassium hydroxide and sodium hydroxide is sprayed with a high-speed jet onto exhaust gas containing silicon compounds containing halogens such as SiF, SiH, and acids such as HCI, IIF, and Cl2. A second invention relates to a method for treating exhaust gas characterized by promoting a hydrolysis reaction and a neutralization reaction of the alkaline cleaning liquid (C) of the exhaust gas in the spray (1), and a second aspect of the invention relates to a method for discharging the alkaline cleaning liquid (C) at high pressure. a high-pressure jet nozzle (2) that forms a high-speed jet spray (1) of fine water droplets;
Silicon compounds containing halogens such as SiH4, IIcI, I
An exhaust gas inlet (3) for untreated exhaust gas containing acid content such as P, C1, etc. is provided in the cleaning chamber (4), and an exhaust gas inlet (3) having a smaller cross-sectional area than the cleaning chamber (4) is provided following the outlet of the cleaning chamber (4). Throat part (
5), and a skirt part (6) whose cross-sectional area gradually increases following the throat part (5), and the cleaning chamber (4), throat part (5), and skirt part (6) form a jet scrubber body. (^) consists of the jet scrubber body (^)
Liquid receiver 1'ff (
The present invention relates to an exhaust gas treatment device characterized by comprising B).
（従来の技術）
現在、排ガス処理装置には充填式スクラバや多孔板式ス
クラバ（ロ）（第３図に示す、）などが用いられていた
。ここでは多孔板式スクラバ（Ｄ）を従来例として説明
する。多孔板式スクラバ（Ｄ）ではスクラバ本体（２１
）内に多孔板（１１）が複数段に設置され、上段でオー
バーフローした洗浄液（Ｃ）が下段に流下するためのオ
ーバーフロー筒（１２）を各段に設けである。最上段の
多孔板（１１）上には洗浄液（Ｃ）を放出する給水ノズ
ル（１３）が配設されており、ここから放出された洗浄
液（Ｃ）はオーバーフロー筒（１２）を通ってオーバー
フローし、次第に下段の多孔板（１１）へと流下してい
く、一方、スクラバ本体（２１）の下部に設けられた排
ガス導入口（３）から内部に導入された排ガスは、多孔
板（１１）の通孔（１５）を通って上昇して行き、この
間に多孔板（１１）上に溜った洗浄液（Ｃ）の中を気泡
となって浮上し、気−液接触にて次第に浄化されていく
、浄化された排ガスはスクラバ本体（２１）の頂部に設
けられたミスト除去装置（７）を通り、排ガス中のミス
トが除去された後大気放出される。処が、５ｉＨｘＣＩ
ｔ、５ｉＣ１，、ＳｉＦ、、ＳｉＨ４など珪素化合物を
含む排ガスを処理した場合大量の粉！！１ （１Ｇ）が
発生し、又″は発生源から大量の粉塵（１０）が発生し
て排ガス中に大量の粉塵（１０）が含まれるようになる
場合や、洗浄液（Ｃ）と排ガスとが気−液接触して化学
反応による粘稠物を生成し、多孔板（１１）の通孔（１
５）やオーバーフロー筒（１２）を目詰りさせるような
場合には連続運転出来ないために多孔板式スクラバ（Ｄ
）を複数基設置し、バッチ式に使用して休止中のものの
多孔板（１１）の洗浄するようにしなければならず、そ
れだけ塔数が増えて設備費用が高額になり、且つ、設置
面積が大きくなり易いという欠点が生じ、しかも目詰り
が甚だしい場合には洗浄頻度を多くしなければならず、
保守に非常に手間と費用がかかるという欠点もあった。(Prior Art) Currently, a filling type scrubber, a perforated plate type scrubber (b) (shown in FIG. 3), etc. have been used in exhaust gas treatment equipment. Here, a perforated plate type scrubber (D) will be explained as a conventional example. For the perforated plate type scrubber (D), the scrubber body (21
), perforated plates (11) are installed in multiple stages, and each stage is provided with an overflow cylinder (12) for the cleaning liquid (C) overflowing in the upper stage to flow down to the lower stage. A water supply nozzle (13) for discharging cleaning liquid (C) is arranged on the uppermost perforated plate (11), and the cleaning liquid (C) discharged from here overflows through the overflow cylinder (12). , gradually flows down to the lower perforated plate (11).On the other hand, the exhaust gas introduced into the interior from the exhaust gas inlet (3) provided at the bottom of the scrubber body (21) flows through the perforated plate (11). The cleaning liquid (C) rises through the through hole (15), during which time it floats up as bubbles in the cleaning liquid (C) that has accumulated on the perforated plate (11), and is gradually purified through gas-liquid contact. The purified exhaust gas passes through a mist removal device (7) provided at the top of the scrubber body (21), and after the mist in the exhaust gas is removed, it is released into the atmosphere. However, 5iHxCI
When processing exhaust gas containing silicon compounds such as t, 5iC1, SiF, SiH4, a large amount of powder is produced! ! 1 (1G) is generated, or when a large amount of dust (10) is generated from the source and a large amount of dust (10) is contained in the exhaust gas, or when the cleaning liquid (C) and the exhaust gas are A viscous substance is produced by a chemical reaction through gas-liquid contact, and the through holes (1) of the perforated plate (11) are formed.
5) or the overflow pipe (12), continuous operation is not possible, so the perforated plate type scrubber (D
) must be installed in multiple units and used in a batch manner to clean the perforated plate (11) of the idle ones, which increases the number of columns and increases the equipment cost. The drawback is that they tend to get bigger, and if the clogging is severe, cleaning must be done more frequently.
Another drawback was that maintenance was extremely time-consuming and costly.
又、この方式ではファン（２０）を設置して未処理排ガ
スを押し込むか又は浄化された排ガスを吸引するが、未
処理排ガスは勿論、浄化排ガス中に残留せる微量の粉ｍ
（１０）がファン（２０）の羽根番こ付着し、長期間
の使用中にこれが成長して羽根のバランスを崩し、ファ
ン（２０）の破損事故を引き起こすというような事故も
あった。In addition, in this method, a fan (20) is installed to push in untreated exhaust gas or to suck in purified exhaust gas, but not only untreated exhaust gas but also trace amounts of powder remaining in the purified exhaust gas are
There have also been accidents where the fan (10) adheres to the blade guard of the fan (20) and grows during long-term use, causing the blade to become unbalanced and causing damage to the fan (20).
これらの点は、スクラバ本体に充填物を充填する充填式
スクラバでも同様である。These points also apply to a filling type scrubber in which the scrubber body is filled with a filler.
（本発明の目的）
本発明は係る従来例に鑑みて為されたもので、その目的
とするところは、５ｉＨｘＣＩ２，５ｉＣＩ４．ＳｉＦ
４．Ｓｉ■、などハロゲンを含む珪素化合物やＨＣＩ
、ＨＦ、ＣＩ。(Object of the present invention) The present invention has been made in view of the conventional example, and its object is to 5iHxCI2, 5iCI4. SiF
4. Silicon compounds containing halogens such as Si■, and HCI
, H.F., C.I.
などの酸分を含み、アルカリ洗浄液にて処理を行うと大
量の粉塵や粘稠物を生成して処理装置に目詰りを生ずる
ような排ガスの処理を連続に処理出来、且つ吸引ファン
のような可動部分がなくて故障も少なく、メンテナンス
も簡単な排ガス処理方法とその装置を提供するにある。It is possible to continuously process exhaust gases that contain acids such as, and which would generate a large amount of dust and viscous substances and clog the processing equipment when treated with an alkaline cleaning solution. To provide an exhaust gas treatment method and its device which have no moving parts, are less likely to break down, and are easy to maintain.
（問題点を解決するための手段） 以下、本発明を図示実施例に従って詳述する。(Means for solving problems) Hereinafter, the present invention will be described in detail according to illustrated embodiments.
ジェットスクラバ本体（＾）は最上段の洗浄室（４）と
それに続くスロート部（５）並びにスロート部（５）に
続くスカート部（６）とで構成されている。洗浄室（４
）は円筒状でその天井面には高圧で洗浄液（Ｃ）を噴出
させて細かい水滴の高速ジェット噴霧（１）を形成する
高圧噴出ノズル（２）が垂設されており、洗浄室（４）
の側面には未処理排ガス導入口（３）が開設されている
。高圧噴出ノズル（２）のスプレー圧力は１〜５にｇ／
ａｍ’程度とし、高圧噴出ノズル（２）から噴射された
高速ジェット噴霧によって形成される排ガス導入孔の入
り口で吸引力−３０＋＊ｍＡｑ〜−５００ｓ＋ｓＡｑ程
度となる。又、その液ガス比＝Ｌ／Ｇは３〜１００に、
／に、である。The jet scrubber main body (^) is composed of an uppermost cleaning chamber (4), a throat section (5) following it, and a skirt section (6) following the throat section (5). Washing room (4
) is cylindrical and has a high-pressure spray nozzle (2) vertically installed on its ceiling that sprays the cleaning liquid (C) under high pressure to form a high-speed jet spray (1) of fine water droplets, and the cleaning chamber (4)
An untreated exhaust gas inlet (3) is provided on the side of the tank. The spray pressure of the high pressure jet nozzle (2) is 1 to 5 g/
am', and the suction force is about -30+*mAq to -500s+sAq at the entrance of the exhaust gas introduction hole formed by the high-speed jet spray injected from the high-pressure jet nozzle (2). Also, the liquid-gas ratio = L/G is 3 to 100,
/is.
未処理排ガス導入口（３）には排ガス導入管（１４）が
接続されており、更にその排ガス導入管（１４）には洗
浄ノズル（１６）が設置されている。排ガス導入管（１
４）は未処理排ガス導入口（３）に向けて下り傾斜に設
置されている。洗浄室（４）の出口にはこれに続けて洗
浄室（４）より断面積の小さなスロート部（５）が設け
られている。尚、洗浄室（４）の下部はスロート部（５
）に円滑に流れ込むように朝顔状に形成されている。ス
ロート部（５）に続けて次第にその断面積を増加するス
カート部（６）が設けられている。ジェットスクラバ本
体（＾）の下方にはスカート部（６）に接続せる液受槽
（Ｂ）が設置されており、洗浄液（Ｃ）が入っている。An exhaust gas introduction pipe (14) is connected to the untreated exhaust gas introduction port (3), and a cleaning nozzle (16) is installed in the exhaust gas introduction pipe (14). Exhaust gas introduction pipe (1
4) is installed on a downward slope toward the untreated exhaust gas inlet (3). A throat portion (5) having a smaller cross-sectional area than the cleaning chamber (4) is provided at the outlet of the cleaning chamber (4). The lower part of the cleaning chamber (4) is the throat part (5).
) is shaped like a morning glory so that it flows smoothly into the A skirt portion (6) whose cross-sectional area gradually increases is provided following the throat portion (5). A liquid receiving tank (B) connected to the skirt part (6) is installed below the jet scrubber body (^), and contains cleaning liquid (C).
ジェットスクラバ本体（＾）の反対側にて液受槽（Ｂ）
の上方にミスト除去装置（７）が設置されている。ミス
ト除去装置（ア）の内部には排ガスの流れに有効な角度
で折り曲げられた邪魔板層（１７）が設置されており、
天井面には大気放出口（１８）が開設されている。液受
槽（Ｂ）にはその他洗浄液（Ｃ）供給管（１９）や循環
ポンプ（８）が設置されており、循環ポンプ（８）は高
圧噴出ノズル（２）やミスト除去装置（７）の洗浄袋Ｎ
（９）に接続されている。更に、液受槽（Ｂ）には内部
に溜った洗浄液（Ｃ）を適宜オーバーフローさせ、オー
バーフローした洗浄液（Ｃ）を濾過する濾過装Ｗ（図示
せず、）も設置されている。Liquid receiving tank (B) on the opposite side of the jet scrubber body (^)
A mist removal device (7) is installed above the. A baffle plate layer (17) bent at an angle effective for the flow of exhaust gas is installed inside the mist removal device (A).
An air outlet (18) is provided on the ceiling. In addition, a cleaning liquid (C) supply pipe (19) and a circulation pump (8) are installed in the liquid receiving tank (B), and the circulation pump (8) is used for cleaning the high-pressure jet nozzle (2) and the mist removal device (7). Bag N
(9). Further, the liquid receiving tank (B) is also provided with a filter W (not shown) for appropriately overflowing the cleaning liquid (C) accumulated inside and filtering the overflowing cleaning liquid (C).
製造装置から排出され、本発明で処理される排ガスは、
５ｉＨｚＣｌｚ 、５ｉＣ１４，ＳｉＦ４．Ｓ：Ｈ４な
どハロゲンを含む珪素化合物や■Ｃ１，ＩＦ、Ｃ１，な
どの酸分を含む半導体排ガスやガラス溶解工程からの排
ガスなどがあり、更にその他、例えば、高炉排ガス、キ
ュポラ排ガス、焼却炉排ガス、キルン排ガスなど粉ＩＩ
（１０）を大量に含むものも対象とされる。The exhaust gas discharged from the manufacturing equipment and treated by the present invention is
5iHzClz, 5iC14, SiF4. S: Silicon compounds containing halogens such as H4, semiconductor exhaust gas containing acids such as C1, IF, C1, exhaust gas from glass melting processes, etc. In addition, there are other types such as blast furnace exhaust gas, cupola exhaust gas, incinerator exhaust gas, etc. , kiln exhaust gas, etc. Powder II
Items containing a large amount of (10) are also targeted.
排ガス処理用の洗浄液（Ｃ）は、水酸化カリウムや水酸
化ナトリウムなどのアルカリ成分を含む水溶液である。The cleaning liquid (C) for exhaust gas treatment is an aqueous solution containing alkaline components such as potassium hydroxide and sodium hydroxide.
このアルカリ洗浄液（Ｃ）はアルカリ濃度０．１％〜１
５％でｐＨ９〜１４のものを使用するものである。アル
カリ濃度は未処理排ガスの種類によって適宜選定される
。This alkaline cleaning solution (C) has an alkaline concentration of 0.1% to 1.
5% and pH 9 to 14 is used. The alkali concentration is appropriately selected depending on the type of untreated exhaust gas.
（作 用）
しかして、製造工程から送り出されて来た未処理排ガス
は、未処理排ガス導入口（３）を通ってジェットスクラ
バ本体（八）の洗浄室（４）に導かれる。洗浄室（４）
では高圧噴出ノズル（２）から高圧で洗浄液（Ｃ）が噴
き出され、細かい水滴の高速ジェット噴霧（１）となっ
てスロート部（５）に吹き込まれ、スロート部（５）で
絞られて流速を増し、スカート部（６）で次第にその流
速を落とし、液受ｆ１！ （Ｂ）に注ぎ込むようになっ
ている。この間洗浄室（４）内の空気は高速ジェット噴
Ｎ（１）に巻き込まれて負圧になっており、前述の排ガ
スは吸い込まれるようにして高速ジェット噴霧（１）に
巻き込まれ、高効率で気−液接触が図られ、以下の反応
式に従って除害される。(Function) The untreated exhaust gas sent out from the manufacturing process is led to the cleaning chamber (4) of the jet scrubber body (8) through the untreated exhaust gas inlet (3). Washing room (4)
The cleaning liquid (C) is spouted out at high pressure from the high-pressure jet nozzle (2), becomes a high-speed jet spray (1) of fine water droplets, and is blown into the throat part (5), where it is narrowed and the flow rate is increased. The flow velocity is gradually decreased at the skirt portion (6), and the liquid receiver f1! (B). During this time, the air in the cleaning chamber (4) is drawn into the high-speed jet spray N (1) and has a negative pressure, and the aforementioned exhaust gas is sucked in and drawn into the high-speed jet spray (1), resulting in high efficiency. Gas-liquid contact is made, and detoxification is carried out according to the following reaction formula.
（化学反応式）
・・・加水分解反応式・・・
■ ｎ５ｉＨ，ｃｌ ｘ＋ＨｚＯ−” （ＳｉＯＩｌ、
）ｎ＋２ｎＨｃＩここで（ＳｉＯＨｚ＞ｎはボリシロキ
酸である。(Chemical reaction formula) ...Hydrolysis reaction formula... ■ n5iH,cl x+HzO-” (SiOIl,
)n+2nHcI where (SiOHz>n is polysiloxic acid.
■ ３ＳｉＦ４＋）１２０→２ＨｔＳｉＦｇ＋５ｉＯｚ
ここでＨ，５ｉＦｓはへキサフルオロケイ酸である。■ 3SiF4+)120→2HtSiFg+5iOz
Here, H,5iFs is hexafluorosilicic acid.
■ ＳｉＦ４”２Ｈ２０−＋ＳｉＯ＊”４ＨＦこれらの
化学反応により発生した酸分は、アルカリ洗浄液（４）
で中和処理される。■ SiF4"2H20-+SiO*"4HF The acid content generated by these chemical reactions is removed from the alkaline cleaning solution (4).
is neutralized.
又、前述の化学反応により生成した排ガス中の細かい粉
ｎ （１０）や生産１穆から運ばれて来た粉塵（１０）
は非常に高い効率で高速ジェット噴霧（１）の水滴と接
触して極めて高率良く捕集される事になる。粉ＪＩ！
（１０）を捕集した水滴はスカート部〈６）を落下する
内に次第に大きな水滴に成長し、前述のように液受槽（
Ｂ）に注ぎ込む、尚、シランのようなものを含む半導体
排ガスの場合は、爆発下限界まで不活性ガスで希釈され
て洗浄室（４）に導入される。この場合、半導体排ガス
は洗浄液（Ｃ）と接触すると加水分解して大量の粉ｊ！
！ （１０）が生成されるが前述の方法で捕集除去され
る。In addition, fine powder n (10) in the exhaust gas generated by the chemical reaction mentioned above and dust carried from the production site (10)
comes into contact with the water droplets of the high-speed jet spray (1) and is collected at a very high rate. Powder JI!
The water droplets collected in (10) gradually grow into larger water droplets as they fall down the skirt part (6), and as mentioned above, the water droplets collect in the liquid receiving tank (6).
In the case of a semiconductor exhaust gas containing something like silane, which is poured into B), it is diluted with an inert gas to the lower explosive limit and introduced into the cleaning chamber (4). In this case, the semiconductor exhaust gas is hydrolyzed when it comes into contact with the cleaning liquid (C), producing a large amount of powder.
! (10) is generated and is collected and removed by the method described above.
又、ＨＣｌ、ＨＦ、Ｃｈなどの酸を含む排ガスも洗浄液
（Ｃ）をアルカリ液とする事により前述同様気−液接触
にて中和し、液受槽（Ｂ）に回収する事になる。Moreover, by using an alkaline liquid as the cleaning liquid (C), the exhaust gas containing acids such as HCl, HF, Ch, etc. is neutralized by gas-liquid contact as described above, and is recovered in the liquid receiving tank (B).
・・・中和反応式・・・
ＨＦ４ＮａＯ１１→ＮａＦ＋ＨｔＯ
ＨＣＩ＋ＮａＯＨ−”ＮａＣｌ＋Ｈ，０このようにして
浄化された排ガスは液受槽（Ｂ）の上部を通ってミスト
除去装置（７）に入る９次いでミスト除去装置（７）中
を上昇している間に邪魔板層（１７）を通過し、排ガス
中のミストを分離した後大気放出される。一方、液受槽
（Ｂ）に設置された循環ポンプ（８）は液受槽（Ｂ）の
洗浄液（Ｃ）をくみ上げ、高圧噴出ノズル（２）に供給
し、洗浄液（Ｃ）を循環させる。液受槽（Ｂ）の洗浄液
（Ｃ）の一部はオーバーフローにて液受Ｍｌ （Ｂ）外
に取り出され、濾過、中和、希釈され、水質基準値以下
になったところで河川に放流される。オーバーフローし
た洗浄液（Ｃ）と等量の新しい洗浄液（Ｃ）が液受槽（
Ｂ）に供給され、液受槽（Ｂ）内の洗浄液（Ｃ）の濃度
が一定に保たれる。又、ミスト除去装置（７）ではミス
トの除去が連続的になされるが、浄化された排ガス中に
わずかながら粉！！！ （１０）が残っており、これが
邪魔板層（１））の表面に付着するため、洗浄装置（９
）で付着粉１１％ （１０）を自動的に洗い落とす、洗
浄装Ｍ（９）へは循環ポンプ（８）から洗浄液（Ｃ）が
供給される事になる。又、稼動中に第２図のように排ガ
ス導入管（１４）の内部又は未処理排ガス導入口（３）
に粉１！！（１０）が次第に溜るが、適宜、洗浄装ノズ
ルから洗浄液（Ｃ）を噴射する事により、粉ｔｌｉ（１
０）を洗い流す。...Neutralization reaction formula... HF4NaO11→NaF+HtO HCI+NaOH-"NaCl+H,0 The exhaust gas purified in this way passes through the upper part of the liquid receiving tank (B) and enters the mist removal device (7).9Then, the mist is removed. While rising in the device (7), it passes through the baffle plate layer (17) and is released into the atmosphere after separating the mist in the exhaust gas. On the other hand, the circulation pump (8) installed in the liquid receiving tank (B) ) pumps up the cleaning liquid (C) from the liquid receiving tank (B), supplies it to the high pressure jet nozzle (2), and circulates the cleaning liquid (C).A part of the cleaning liquid (C) from the liquid receiving tank (B) is overflowed. The liquid is taken out of the receiver Ml (B), filtered, neutralized, diluted, and discharged into the river when the water quality falls below the standard value.A new cleaning liquid (C) in the same amount as the overflow cleaning liquid (C) is poured into the liquid. Receiver (
B), and the concentration of the cleaning liquid (C) in the liquid receiving tank (B) is kept constant. Also, although the mist removal device (7) continuously removes mist, a small amount of powder remains in the purified exhaust gas! ! ! (10) remains and this adheres to the surface of the baffle plate layer (1)).
) The cleaning liquid (C) is supplied from the circulation pump (8) to the cleaning device M (9) which automatically washes off the adhering powder (10). Also, during operation, as shown in Fig. 2, the inside of the exhaust gas inlet pipe (14) or the untreated exhaust gas inlet (3)
1 powder! ! (10) gradually accumulates, but by spraying the cleaning liquid (C) from the cleaning device nozzle, the powder tli (1
0) is washed away.
（効 果）
第１発明は蒸上のように、５ｉＨｔＣＩｚ、５ｉＣＩ４
．ＳｉＦ４゜ＳｉＨ，などハロゲンを含む珪素化合物や
ＨＣＩ 、Ｉ（Ｆ、ＣＩ２などの酸分を含む排ガスに水
酸化カリウムや水酸化ナトリウムなどのアルカリ成分を
含む洗浄液を高速ジェット噴霧するので、高速ジェット
噴霧内で排ガスとアルカリ洗浄液とが極めて高率良く気
−液接触し、加水分解反応や中和反応を促進するもので
あり、しかも、噴霧状態の洗浄液に接触して除害反応す
るのであるから、反応によって生じた粉塵は直ちに微水
滴に捕集され、粉塵除去にも優れた効果があり、又、噴
霧状態での反応であるため、反応生成物が処理装置に詰
まるというような事がない。(Effect) The first invention, as in the above, 5iHtCIz, 5iCI4
．． A cleaning solution containing alkaline components such as potassium hydroxide and sodium hydroxide is sprayed at high speed onto exhaust gas containing silicon compounds containing halogens such as SiF4゜SiH, and acids such as HCI, I(F, CI2, etc.). The exhaust gas and the alkaline cleaning liquid come into contact with each other at a very high rate, promoting hydrolysis and neutralization reactions, and moreover, when they come into contact with the sprayed cleaning liquid, they undergo a detoxifying reaction. The dust generated by the reaction is immediately collected in fine water droplets, which has an excellent dust removal effect, and since the reaction is carried out in a spray state, there is no possibility that the reaction product will clog the processing equipment.
又、第２発明にあっては、高圧でアルカリ洗浄液を噴出
させて細かい水滴の高速ジェット噴霧を形成する高圧噴
出ノズルと、Ｓ＋１ＩｚＣＩｚ、５ｉＣＩ＋、ＳｉＦ４
゜Ｓｉｎ＜などハロゲンを含む珪素化合物やｌｌＣｌ、
ＩＩＦ、ＣＩ。In addition, the second invention includes a high-pressure jet nozzle that jets alkaline cleaning liquid at high pressure to form a high-speed jet spray of fine water droplets, and S+1IzCIz, 5iCI+, SiF4.
Silicon compounds containing halogens such as ゜Sin<, llCl,
IIF, CI.
などの酸分を含む未処理排ガスの排ガス導入口とを洗浄
室に設け、洗浄室の出口に続けて洗浄室より断面積の小
さなスロート部を設け、スロート部に続けて次第にその
断面積を増加するスカート部を設けて洗浄室とスロート
部とスカート部とでジェットスクラバ本体を構成し、ジ
ェットスクラバ本体の下方にてスカート部に接続せる液
受槽を設けであるので、高速の高速ジェット噴霧がジェ
ットスクラバ本体内を負圧にし、その結果未処理排ガス
の導入並びに浄化排ガスの放出にファンを必要とせず、
ファンの動力費用を必要としないことは勿論、従来例の
ような粉塵の付着によるファンの破損事故もなく、更に
、ジェットスクラバ本体の内部には構造上粉塵が詰まる
ような箇所がないために５ｉＨｚＣＩｔ、５ｉＣＩ＜、
ＳｉＦ４などハロゲンを含む珪素化合物含有排ガスを除
害処理して大量の粉塵を生起せしめたり、発生源から直
接運ばれてきた大量の粉塵を含む排ガスの処理を長期間
連続的に行っても何等のトラブル〈特に粉塵による目詰
り）が発生せず、連続運転が可能であり、従来例に比べ
て設備費用や設置面積が格段に少なくて済み、又、メン
テナンスをほとんど必要としないという利点がある。An exhaust gas inlet for untreated exhaust gas containing acids, such as The cleaning chamber, the throat part, and the skirt part constitute the jet scrubber main body, and a liquid receiving tank connected to the skirt part is provided below the jet scrubber main body, so that high-speed jet spray can be Negative pressure is created inside the scrubber body, and as a result, no fan is required to introduce untreated exhaust gas or release purified exhaust gas.
Not only does it not require the cost of powering the fan, it also eliminates fan damage caused by dust adhesion as in conventional systems.Furthermore, since there is no structural part inside the jet scrubber body where dust can become clogged, ,5iCI<,
Even if exhaust gas containing silicon compounds containing halogens such as SiF4 is detoxified to generate a large amount of dust, or exhaust gas containing large amounts of dust transported directly from the source is continuously treated for a long period of time, there is no effect. It does not cause trouble (especially clogging due to dust), can be operated continuously, requires significantly less equipment cost and installation area than conventional methods, and has the advantage of requiring almost no maintenance.
第１図・・・本発明のフロー図、
第２図・・・本発明の洗浄室の一実施例の断面図、第３
図・・・従来例のフロー図。
（＾）・・・ジェットスクラバ本体、
（Ｂ）・・・液受槽、 （Ｃ）・・・洗浄液、（
Ｄ）・・・多孔板式スクラバ、
（１）・・・高速ジェット噴霧、
（２）・・・高圧噴出ノズル、
（３）・・・未処理排ガス導入口、
（４）・・・洗浄室、 （５）・・・スロート部
、（６）・・・スカート部、 （７）・・・ミスト除
去装置、（８）・・・循環ポンプ、 （９）・・・洗
浄装置、（１０）・・・粉塵、 （１１）・・
・多孔板、（１２）・・・オーバーフロー筒、
（１３）・・・給水ノズル、 （１４）・・・排ガス導
入管、（１５）・・・通孔、 （１６）・・・洗
浄ノズル、（１））・・・邪魔板層、 （１８）・・
・大気放出口、（１９）・・・洗浄液供給管、（２０）
・・・ファン、（２１）・・・スクラバ本体。
発明者 宮崎 健
発明者 間材 昭Figure 1: Flowchart of the present invention; Figure 2: Cross-sectional view of an embodiment of the cleaning chamber of the present invention; Figure 3:
Figure: Flow diagram of a conventional example. (^)...Jet scrubber body, (B)...Liquid receiving tank, (C)...Cleaning liquid, (
D)...Perforated plate scrubber, (1)...High speed jet spray, (2)...High pressure jet nozzle, (3)...Untreated exhaust gas inlet, (4)...Cleaning chamber, (5)...Throat part, (6)...Skirt part, (7)...Mist removal device, (8)...Circulation pump, (9)...Cleaning device, (10)... ...Dust, (11)...
・Perforated plate, (12)...Overflow tube, (13)...Water supply nozzle, (14)...Exhaust gas introduction pipe, (15)...Through hole, (16)...Washing nozzle, (1))...Baffle plate layer, (18)...
・Atmospheric outlet, (19)...Cleaning liquid supply pipe, (20)
...Fan, (21)...Scrubber body. Inventor: Ken Miyazaki Inventor: Akira Mazari
Claims (11)
、ＳｉＨ＿４など珪素化合物やＨＣｌ、ＨＦ、Ｃｌ＿２
などの酸分を含む排ガスに水酸化カリウムや水酸化ナト
リウムなどのアルカリ成分を含む洗浄液を高速ジェット
噴霧し、高速ジェット噴霧内で排ガスのアルカリ洗浄液
による加水分解反応や中和反応を促進させる事を特徴と
する排ガスの処理方法。(1) SiH_2Cl_2, SiCl_4, SiF_4
, silicon compounds such as SiH_4, HCl, HF, Cl_2
A cleaning solution containing alkaline components such as potassium hydroxide and sodium hydroxide is sprayed with a high-speed jet onto the exhaust gas containing acids such as potassium hydroxide, sodium hydroxide, etc., and the hydrolysis reaction and neutralization reaction of the exhaust gas by the alkaline cleaning solution are promoted within the high-speed jet spray. Characteristic exhaust gas treatment method.
ｃｍ＾２とする事を特徴とする特許請求の範囲第１項記
載の排ガス処理方法。(2) Adjust the spray pressure of high-speed jet spray to 1 to 5 kg/
2. The exhaust gas treatment method according to claim 1, wherein the exhaust gas treatment method is set to cm^2.
そのｐＨ９〜１４とする事を特徴とする特許請求の範囲
第１項記載の排ガス処理方法。(3) The concentration of the alkaline cleaning solution is 0.1% to 15%,
The exhaust gas treatment method according to claim 1, characterized in that the pH is adjusted to 9 to 14.
する特許請求の範囲第１項記載の排ガス処理方法。(4) The exhaust gas treatment method according to claim 1, characterized in that L/G is 3 to 100 weight/weight.
高速ジェット噴霧を形成する高圧噴出ノズルと、ＳｉＨ
＿２Ｃｌ＿２、ＳｉＣｌ＿４、ＳｉＦ＿４、ＳｉＨ＿４
などハロゲンを含む珪素化合物やＨＣｌ、ＨＦ、Ｃｌ＿
２などの酸分を含む未処理排ガスの排ガス導入口とを洗
浄室に設け、洗浄室の出口に続けて洗浄室より断面積の
小さなスロート部を設け、スロート部に続けて次第にそ
の断面積を増加するスカート部を設けて洗浄室とスロー
ト部とスカート部とでジェットスクラバ本体を構成し、
ジェットスクラバ本体の下方にてスカート部に接続せる
液受槽を設けて成る事を特徴とする排ガス処理装置。(5) A high-pressure jet nozzle that jets alkaline cleaning liquid at high pressure to form a high-speed jet spray of fine water droplets, and a SiH
_2Cl_2, SiCl_4, SiF_4, SiH_4
Silicon compounds containing halogens such as HCl, HF, Cl_
An exhaust gas inlet for untreated exhaust gas containing acids such as No. A jet scrubber main body is configured by a cleaning chamber, a throat part, and a skirt part by increasing the number of skirt parts.
An exhaust gas treatment device comprising a liquid receiving tank connected to a skirt portion below a jet scrubber body.
ｃｍ＾２とし、高速ジェット噴霧によつて形成される排
ガス導入孔での吸引力−３０ｍｍＡｑ〜−５００ｍｍＡ
ｑとする事を特徴とする特許請求の範囲第５項記載の排
ガス処理装置。(6) Adjust the spray pressure of high-speed jet spray to 1 to 5 kg/
cm^2, and the suction force at the exhaust gas introduction hole formed by high-speed jet spraying is -30 mmAq to -500 mmA.
The exhaust gas treatment device according to claim 5, characterized in that q.
そのｐＨ９〜１４とする事を特徴とする特許請求の範囲
第５項記載の排ガス処理装置。(7) The concentration of the alkaline cleaning solution is 0.1% to 15%,
The exhaust gas treatment device according to claim 5, characterized in that the pH thereof is set to 9 to 14.
する特許請求の範囲第５項記載の排ガス処理装置。(8) The exhaust gas treatment device according to claim 5, characterized in that L/G is 3 to 100 weight/weight.
るミスト除去装置を液受槽に併設して成る事を特徴とす
る特許請求の範囲第５項に記載の徘ガス処理装置。(9) The stray gas treatment device according to claim 5, characterized in that the liquid receiving tank is provided with a mist removing device for removing mist of the clean gas discharged through the liquid receiving tank.
圧噴出ノズルに接続して成る事を特徴とする特許請求の
範囲第５項に記載の排ガス装置。(10) The exhaust gas device according to claim 5, characterized in that a circulation pump is installed in the liquid receiving tank, and the circulation pump is connected to a high-pressure jet nozzle.
特徴とする特許請求の範囲第９項に記載の排ガス処理装
置。(11) The exhaust gas treatment device according to claim 9, characterized in that a cleaning device is installed in the mist removal device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61203993A JPS6359337A (en) | 1986-08-30 | 1986-08-30 | Method and apparatus for treating exhaust gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61203993A JPS6359337A (en) | 1986-08-30 | 1986-08-30 | Method and apparatus for treating exhaust gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6359337A true JPS6359337A (en) | 1988-03-15 |
Family
ID=16482999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61203993A Pending JPS6359337A (en) | 1986-08-30 | 1986-08-30 | Method and apparatus for treating exhaust gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6359337A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02207813A (en) * | 1989-02-07 | 1990-08-17 | Mitsui Toatsu Chem Inc | Method and device for treating waste gas |
| US5405590A (en) * | 1993-02-05 | 1995-04-11 | Pedro Buarque de Macedo | Off-gas scrubber system |
| KR101021583B1 (en) | 2010-10-18 | 2011-03-16 | 조윤현 | A waste reclamation gas batch processing device |
| JP2016168574A (en) * | 2015-03-13 | 2016-09-23 | 三菱重工業株式会社 | Scrubber, exhaust gas treatment equipment and ship |
| TWI704954B (en) * | 2019-02-27 | 2020-09-21 | 潘彥儒 | Wet scrubber for capturing solid particles by using microbubbles |
| US20230110060A1 (en) * | 2021-10-08 | 2023-04-13 | Highlight Tech Corp. | Long-effect self-cleaning negative-pressure ejector |
| US20230158534A1 (en) * | 2021-11-23 | 2023-05-25 | Highlight Tech Corp. | Self-cleaning negative-pressure ejector |
| WO2023189306A1 (en) * | 2022-03-30 | 2023-10-05 | 栗田工業株式会社 | Cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment facility |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5684618A (en) * | 1979-12-12 | 1981-07-10 | Seitetsu Kagaku Co Ltd | Method of removing harmful gas for semiconductor |
| JPS5684619A (en) * | 1979-12-12 | 1981-07-10 | Seitetsu Kagaku Co Ltd | Nonpolluting method of gas for semiconductor |
| JPS59162939A (en) * | 1983-03-09 | 1984-09-13 | Fujitsu Ltd | Chemical reaction gas exhaust apparatus |
| JPS60118216A (en) * | 1983-11-30 | 1985-06-25 | Sanei Seisakusho:Kk | Exhaust gas treating apparatus |
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1986
- 1986-08-30 JP JP61203993A patent/JPS6359337A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5684618A (en) * | 1979-12-12 | 1981-07-10 | Seitetsu Kagaku Co Ltd | Method of removing harmful gas for semiconductor |
| JPS5684619A (en) * | 1979-12-12 | 1981-07-10 | Seitetsu Kagaku Co Ltd | Nonpolluting method of gas for semiconductor |
| JPS59162939A (en) * | 1983-03-09 | 1984-09-13 | Fujitsu Ltd | Chemical reaction gas exhaust apparatus |
| JPS60118216A (en) * | 1983-11-30 | 1985-06-25 | Sanei Seisakusho:Kk | Exhaust gas treating apparatus |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02207813A (en) * | 1989-02-07 | 1990-08-17 | Mitsui Toatsu Chem Inc | Method and device for treating waste gas |
| US5405590A (en) * | 1993-02-05 | 1995-04-11 | Pedro Buarque de Macedo | Off-gas scrubber system |
| KR101021583B1 (en) | 2010-10-18 | 2011-03-16 | 조윤현 | A waste reclamation gas batch processing device |
| JP2016168574A (en) * | 2015-03-13 | 2016-09-23 | 三菱重工業株式会社 | Scrubber, exhaust gas treatment equipment and ship |
| TWI704954B (en) * | 2019-02-27 | 2020-09-21 | 潘彥儒 | Wet scrubber for capturing solid particles by using microbubbles |
| US20230110060A1 (en) * | 2021-10-08 | 2023-04-13 | Highlight Tech Corp. | Long-effect self-cleaning negative-pressure ejector |
| US11801473B2 (en) * | 2021-10-08 | 2023-10-31 | Highlight Tech Corp. | Long-effect self-cleaning negative-pressure ejector |
| US20230158534A1 (en) * | 2021-11-23 | 2023-05-25 | Highlight Tech Corp. | Self-cleaning negative-pressure ejector |
| WO2023189306A1 (en) * | 2022-03-30 | 2023-10-05 | 栗田工業株式会社 | Cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment facility |
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