WO2023189306A1 - Cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment facility - Google Patents

Cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment facility Download PDF

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Publication number
WO2023189306A1
WO2023189306A1 PCT/JP2023/008698 JP2023008698W WO2023189306A1 WO 2023189306 A1 WO2023189306 A1 WO 2023189306A1 JP 2023008698 W JP2023008698 W JP 2023008698W WO 2023189306 A1 WO2023189306 A1 WO 2023189306A1
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Prior art keywords
cleaning
exhaust gas
gas treatment
treatment equipment
water
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PCT/JP2023/008698
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French (fr)
Japanese (ja)
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慎吾 原島
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栗田工業株式会社
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D47/00Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/06Spray cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • B01D53/68Halogens or halogen compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/74General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/77Liquid phase processes
    • B01D53/78Liquid phase processes with gas-liquid contact
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23GCREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G7/00Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
    • F23G7/06Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23JREMOVAL OR TREATMENT OF COMBUSTION PRODUCTS OR COMBUSTION RESIDUES; FLUES 
    • F23J15/00Arrangements of devices for treating smoke or fumes
    • F23J15/02Arrangements of devices for treating smoke or fumes of purifiers, e.g. for removing noxious material
    • F23J15/04Arrangements of devices for treating smoke or fumes of purifiers, e.g. for removing noxious material using washing fluids
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28GCLEANING OF INTERNAL OR EXTERNAL SURFACES OF HEAT-EXCHANGE OR HEAT-TRANSFER CONDUITS, e.g. WATER TUBES OR BOILERS
    • F28G9/00Cleaning by flushing or washing, e.g. with chemical solvents

Definitions

  • the present invention relates to a cleaning method, a cleaning liquid, and a cleaning agent for exhaust gas treatment equipment, and specifically relates to a cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment equipment for treating exhaust gas from semiconductor manufacturing processes, etc.
  • exhaust gas containing perfluorinated compounds and the like.
  • this exhaust gas contains WF 6 , CH 2 F 2 , Cl 2 , BCl 3 , F 2 , HF, SiH 4 , NH 3 , PH 3 , TEOS (tetraethoxysilane), TRIS (triethoxysilane), TiCl 4 may also be included.
  • Exhaust gas treatment equipment that processes such exhaust gas uses combustion, electric heating, plasma, etc. to perform a combustion (oxidation) or thermal decomposition reaction on perfluorinated compounds, and then The exhaust gas is washed in the smoke washing room, and F2 , etc. in the gas is absorbed and removed.
  • the combustion treatment device for this exhaust gas is a water-cooled combustion system that allows water to flow down along the inner wall of the combustion chamber to prevent combustion products from adhering to the inner wall and protect the inner wall from combustion heat.
  • Patent Document 2 Wet scrubbers are widely used as exhaust gas purification treatment devices.
  • deposits are likely to form inside the abatement device, in the piping, etc., and it is necessary to stop the abatement device and remove the deposits.
  • the deposits include oxides of tungsten (W), but other solids are also generated.
  • Patent Document 2 describes that a jet spray nozzle is installed at the bottom of a wet scrubber, and cleaning water is sprayed upward onto a porous plate in the scrubber to physically peel off and remove deposits. However, it is not possible to thoroughly clean the inside of a wet scrubber.
  • the present invention provides a method for cleaning exhaust gas treatment equipment, a cleaning liquid, and a cleaning agent that can sufficiently remove solid substances mainly composed of tungsten oxides such as deposits and attachments in exhaust gas treatment equipment in a short time.
  • the challenge is to provide the following.
  • the cleaning method for exhaust gas treatment equipment of the present invention is a cleaning method for exhaust gas treatment equipment that processes exhaust gas from an electronic component manufacturing process, and the object to be cleaned in the wet exhaust gas treatment equipment is cleaned with an alkaline cleaning liquid having a pH of 8 to 14.
  • the exhaust gas treatment equipment includes an abatement device that decomposes exhaust gas using heat, and a wet scrubber into which gas from the abatement device is introduced.
  • the cleaning method is a method of cleaning the scrubber or its constituent members.
  • the wet scrubber includes a lower water tank and a water sprinkling means to which water is circulated and supplied from the lower water tank by a circulation pump
  • the method for cleaning the exhaust gas treatment equipment includes: and a step of supplying the water in the lower water tank to which the aqueous detergent solution has been added to the water sprinkling means.
  • the wet scrubber includes a mist catcher, a water sprinkler is disposed above the mist catcher, and an alkaline cleaning solution with a pH of 8 to 14 is supplied to the water sprinkler to remove the mist catcher and the water sprinkler. Clean the inside of the lower wet scrubber.
  • some components are removed from the wet scrubber and cleaned by immersing them in an alkaline cleaning solution with a pH of 8 to 14.
  • the cleaning liquid of the present invention is a cleaning liquid for exhaust gas treatment equipment that processes exhaust gas from electronic component manufacturing processes, and is composed of an alkaline solution with a pH of 8 to 14.
  • the cleaning agent of the present invention is a cleaning agent for preparing a cleaning liquid for exhaust gas treatment equipment that treats exhaust gas from an electronic component manufacturing process, and comprises an alkaline agent for making the cleaning liquid an alkaline solution with a pH of 8 to 14. .
  • the alkali is choline or ammonia.
  • solid matter in exhaust gas treatment equipment can be sufficiently dissolved and/or dispersed and removed in a short time using a cleaning agent.
  • the present invention is applied to manufacturing equipment for semiconductors, etc., the operating efficiency of the manufacturing process machine for semiconductors, etc. can be improved, and the productivity of semiconductors, etc. is improved.
  • FIG. 2 is a configuration diagram of the abatement equipment. It is a block diagram of a scrubber. It is a graph showing test results. It is a graph showing test results. It is a graph showing test results. It is a graph showing test results. It is a graph showing test results.
  • exhaust gas from a semiconductor manufacturing process and air from a blower are supplied to a burner 2 provided at the top of a tower-shaped combustion chamber 1, and the exhaust gas is combusted within the combustion chamber 1.
  • the exhaust gas is preferably a gas generated in an electronic component manufacturing process, and a gas containing WF 6 is particularly preferred.
  • Silanes SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , etc.
  • gas components other than silane B 2 H 6 , PH 3 , NH 3 , N 2 O, H 2 , H 2 Se, GeHe, AsH3 , CH4 , C2H4 , CO , Cl2, F2, ClF3 , NF3 , CH2F2 , NO , O2 , CF4 , C4F8 , C5F8 , CHF3
  • Silanes SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , etc.
  • gas components other than silane B 2 H 6 , PH 3 , NH 3 , N 2 O, H 2 , H 2 Se, GeHe, AsH3 , CH4 , C2H4 , CO , Cl2, F2, ClF3 , NF3
  • a nozzle (not shown) is provided to flow water along the inner wall surface of the combustion chamber 1, and water is supplied to the nozzle by a water supply line.
  • the water flowing out from this nozzle flows down the inner wall surface of the combustion chamber 1 in the form of a water film, and the inner wall surface is protected from combustion heat. Note that water flowing in the form of a water film on the inner wall surface of the combustion chamber 1 absorbs water-soluble components in the combustion gas and captures particulates. It also lowers the gas temperature.
  • Water flowing down the inner wall surface collects in the pit 1a at the bottom of the combustion chamber.
  • the water supply line to the nozzle includes a pipe 3, a pump 4, a pipe 5, and pipes 6 and 7 branched from the pipe 5.
  • a pipe 6 is connected to the nozzle, and a pipe 7 is provided to supply water to the pit 1a at the bottom of the combustion chamber 1.
  • a primary smoke cleaning chamber 11 is installed adjacent to the combustion chamber 1.
  • the lower part of the combustion chamber 1 and the lower part of the primary smoke cleaning chamber 11 communicate with each other through a duct 12, and gas from the combustion chamber 1 is introduced into the primary smoke cleaning chamber 11 through the duct 12, and the gas from the combustion chamber 1 is introduced into the primary smoke cleaning chamber 11 through the duct 12. It ascends inside the smoke washing chamber 11.
  • a part of the water in the pit 1a of the combustion chamber 1 flows out through the duct 12 into the pit 11a of the primary smoke cleaning chamber 11 by overflow.
  • Part of the water in the pit 1a of the combustion chamber 1 may be transferred to the pit 11a by a water transfer pipe separate from the duct 12.
  • Water in the pit 11a at the bottom of the primary smoke washing chamber 11 is sprinkled by a sprinkler 16 via a pump 14 and piping 15.
  • the gas rising in the primary smoke washing chamber 11 comes into contact with water sprinkled from the water sprinkler 16, and water-soluble components and fine particles in the gas are absorbed or captured by the water.
  • the gas that has passed through the primary smoke washing chamber 11 is introduced from the gas outlet 17 into the wet scrubber 20 through the gas inlet 25 by the duct 18 and the blower 19.
  • Water at the bottom of the wet scrubber 20 is supplied to the nozzle 21 (water sprinkling means) at the top of the wet scrubber 20 by a circulation pump 23 and piping 22.
  • the gas comes into contact with the water sprayed from the nozzle 21, and after the water-soluble components and fine particles are absorbed or captured by the water, the gas flows out from the outlet 26.
  • the wet scrubber 20 is supplied with water for gas cleaning through a pipe 24.
  • the water at the bottom of the combustion chamber 1, primary smoke chamber 11, and scrubber 20 is taken out via pipes 31, 32, and 33, and is sent to a wastewater treatment facility (not shown) for treatment.
  • a mist catcher 40 is provided at the upper part of the wet scrubber 20.
  • a grating 41 is provided below the nozzle 21.
  • the water in the lower water tank 44 is sucked into the pump 23 by the piping 22a, and is sent to the nozzle 21 via the piping 22.
  • the water sprayed from the nozzle 21 falls onto the intermediate plate 42 , passes through the water drop hole 43 provided in the intermediate plate 42 , and falls into the lower water tank 44 .
  • the gas inlet 25 is provided on the side wall surface of the wet scrubber above the intermediate plate 42.
  • the piping 24 is connected to the lower water tank 44.
  • An overflow port 45 is provided at an upper portion of the side surface of the lower water tank 44.
  • a pipe 48 is provided to communicate the bottom of the lower water tank 44 with the pipe 47, and a valve 49 is provided in the pipe 48.
  • the valve 49 is opened only when draining water from the lower water tank 44, and is closed at other times.
  • An aqueous solution of cleaning agent can be injected into the lower water tank 44 from a chemical injection device 50 via a pipe 51.
  • the chemical injection device 50 includes a tank that stores an aqueous solution of a cleaning agent, a chemical injection pump, and a control circuit that controls the chemical injection pump.
  • pH meters 52 and 53 are provided in the piping 22 and the relay tank 46, respectively, and detection signals from the pH meters 52 and 53 are transmitted to the control circuit.
  • a cleaning start command signal is input to the control circuit.
  • the control circuit starts the chemical injection pump and performs chemical injection such that the pH detected by the pH meter 52 is 8 to 14, particularly 10 to 13, particularly 11 to 13.
  • a cleaning liquid consisting of an alkaline solution with a pH of 8 to 14 is ejected from the nozzle 21, and solid matter such as deposits and attachments is dissolved and/or dispersed. do.
  • the wet scrubber 20 is cleaned while the exhaust gas treatment is stopped, but the cleaning may be performed while the exhaust gas treatment is continued. Further, cleaning may be carried out periodically, or when the exhaust capacity and exhaust gas treatment performance are degraded due to adhesion of solid matter.
  • the solid matter in the scrubber 20 can be sufficiently dissolved and removed in a short time with an alkaline cleaning solution having a pH of 8 to 14, particularly a pH of 10 to 13, and especially a pH of 11 to 13, thereby shortening the working time and It is possible to reduce labor costs.
  • alkaline agents such as inorganic alkaline agents such as sodium hydroxide, potassium hydroxide, ammonia, and sodium metasilicate, and organic alkaline agents such as choline and TMAH are suitable, but are not limited thereto.
  • cleaning agents include silica scale cleaning agents, solubilizing agents such as foaming agents (peroxide water, etc.) and chelating agents (EDTA, polyphosphoric acid, etc.), calcium scale inhibitors, slime control agents ( Dichloroglyoxime, 2,2-dibromo-2-nitroethanol, 2,2-dibromo-3-nitrilopropionamide, chlorosulfamic acid, bis-1,4-bromoacetoxy-2-butene, ametrine, 5-chloro- 2-methyl-4-isothiazolin-3-one) and the like.
  • the alkaline agent may be a waste alkali from an electronic parts factory or the like.
  • the cleaning agent aqueous solution is caused to flow out from the nozzle 21 by the circulation pump 23, but a submersible pump is arranged in the lower water tank 44, a water sprinkler is arranged above the mist catcher 40, and the submersible pump Discharged water may be supplied to the sprinkler through a hose to sprinkle water to dissolve and/or disperse and remove solids in the mist catcher 40 and the area below it.
  • This submersible pump can be placed in the lower water tank 44 through a lower water tank inspection port provided near the circulation pump 23. Further, the hose can be drawn out of the wet scrubber 20 through the lower water tank inspection port and into the upper part of the scrubber 20 through the inspection window (not shown) on the side of the wet scrubber 20 or the outlet 26.
  • an alkaline cleaning agent aqueous solution is added to the lower water tank 44, and the water in the lower water tank 44 is used as a cleaning liquid with a pH of 8 to 14. Then, this cleaning liquid may be supplied to the nozzle 21 or a water sprinkler above the mist catcher 40.
  • the inside of the wet scrubber is cleaned with a cleaning liquid, but the components of the wet scrubber (for example, the nozzle, mist catcher, lower water tank, etc.) are removed from the scrubber, and the cleaning tank containing the cleaning liquid with a pH of 8 to 14 is cleaned. It may also be cleaned by immersing it in a cleaning solution.
  • the components of the wet scrubber for example, the nozzle, mist catcher, lower water tank, etc.
  • the cleaning tank containing the cleaning liquid with a pH of 8 to 14 is cleaned. It may also be cleaned by immersing it in a cleaning solution.
  • solid matter is removed from the wet scrubber 20, but other objects to be cleaned such as the primary smoke cleaning chamber 11 and the blower 19 may be cleaned with an alkaline cleaning liquid having a pH of 8 to 14.
  • the cleaning liquid may be circulated and supplied to the object to be cleaned, or the component may be removed and immersed in the cleaning liquid for cleaning.
  • the abatement device is a "combustion type,” but it is not limited to this, and any device that uses heat, such as an electric heating type or a plasma type, may be used.
  • ⁇ Test method> ⁇ Sample solid matter ⁇ The sample was sediment collected from a scrubber installed after the abatement equipment in the semiconductor manufacturing process. When the components were analyzed, the W content was about 55 wt% on a dry basis, and the Si content was about 10 wt% on a dry basis.
  • ⁇ Type and concentration of alkali ⁇ Aqueous solutions of NaOH, choline, and ammonia were used as alkalis. The concentrations were 0.01, 0.1, and 1 wt% as weight % (wt%).
  • ⁇ Test method> To 100 mL of 1 wt% choline aqueous solution, add solid matter (sediments collected from a scrubber installed after the abatement equipment in the semiconductor manufacturing process) to a concentration of 0.5, 1, 2, 3, or 5 wt%. Sample No. I gave it a rating of 1 to 5. Each solution was stirred with a stirrer, and changes in pH and appearance (photographs were taken from the bottom of the beaker) over time were measured and observed. Table 3 shows the test conditions for each sample. Since the volume of all solutions is 100 mL, the amount of solid added directly becomes the wt% concentration.
  • Table 4 shows the results of stirring and measuring the pH of each sample over time. Further, a graph of this result is shown in FIG.
  • sample Nos. 1 and 2 the pH decreased with stirring and remained almost stable in the alkaline range even after 24 hours of stirring. Looking at the results of appearance observation, sample No. In sample No. 1, after 5 hours of stirring, sample No. In No. 2, it was observed that most of the solids were dissolved after 24 hours of stirring.
  • the pH of the cleaning liquid needs to be 8 or higher, and in order to sufficiently dissolve the solids in a short time, the pH needs to be 10 or higher. It has also been suggested that the cleaning effect can be confirmed by changes in pH.

Abstract

This exhaust gas treatment facility comprises: a combustion chamber 1 for combusting wastewater; a nozzle for causing water to flow along the inner wall surface of the combustion chamber 1; a water supply line for supplying water to the nozzle; a primary smoke washing chamber 11; and a scrubber 20. When solids of the scrubber 20 are removed, an aqueous alkaline detergent solution is injected from a chemical injection device 50 into a lower water tank 44 to set the pH value to 8-14. The inside of the scrubber 20 is cleaned by operating a circulation pump 23 and sprinkling water from the nozzle 21. The cleaning solution having a pH of 8 to 14 may be sprinkled from above a mist catcher 40.

Description

排ガス処理設備の洗浄方法、洗浄液及び洗浄剤Cleaning method, cleaning liquid and cleaning agent for exhaust gas treatment equipment
 本発明は、排ガス処理設備の洗浄方法、洗浄液及び洗浄剤に係り、詳しくは、半導体製造プロセス等からの排ガスを処理するための排ガス処理設備の洗浄方法、洗浄液及び洗浄剤に関する。 The present invention relates to a cleaning method, a cleaning liquid, and a cleaning agent for exhaust gas treatment equipment, and specifically relates to a cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment equipment for treating exhaust gas from semiconductor manufacturing processes, etc.
 半導体、液晶、LED、太陽電池等の製造プロセスからは、ペルフルオロ化合物などを含んだ排ガスが排出される。なお、この排ガス中にはWF、CH、Cl、BCl、F、HF、SiH、NH、PH、TEOS(テトラエトキシシラン)、TRIS(トリエトキシシラン)、TiClなどが含まれることもある。このような排ガスを処理する排ガス処理設備(除害装置)では、燃焼、電気加熱、プラズマなどを用いて、ペルフルオロ化合物等を燃焼(酸化)又は熱分解反応させた後、当該装置に組み込まれた洗煙室で排ガスを洗浄し、ガス中のF等を吸収除去する。 2. Description of the Related Art Manufacturing processes for semiconductors, liquid crystals, LEDs, solar cells, etc. emit exhaust gas containing perfluorinated compounds and the like. Note that this exhaust gas contains WF 6 , CH 2 F 2 , Cl 2 , BCl 3 , F 2 , HF, SiH 4 , NH 3 , PH 3 , TEOS (tetraethoxysilane), TRIS (triethoxysilane), TiCl 4 may also be included. Exhaust gas treatment equipment (abatement equipment) that processes such exhaust gas uses combustion, electric heating, plasma, etc. to perform a combustion (oxidation) or thermal decomposition reaction on perfluorinated compounds, and then The exhaust gas is washed in the smoke washing room, and F2 , etc. in the gas is absorbed and removed.
 この排ガスの燃焼処理装置として、燃焼室の内壁面に沿って水を流下させ、燃焼生成物の内壁面への付着を防止すると共に、内壁面を燃焼熱から防護するよう構成した水冷式燃焼方式の除害装置がある(特許文献1)。 The combustion treatment device for this exhaust gas is a water-cooled combustion system that allows water to flow down along the inner wall of the combustion chamber to prevent combustion products from adhering to the inner wall and protect the inner wall from combustion heat. There is a harm removal device (Patent Document 1).
 排ガスの浄化処理装置として湿式スクラバーが広く用いられている(特許文献2)。 Wet scrubbers are widely used as exhaust gas purification treatment devices (Patent Document 2).
特開2003-24741号公報Japanese Patent Application Publication No. 2003-24741 実開昭63-66132号公報Publication No. 63-66132
 水冷式燃焼方式の除害装置にあっては、除害装置内部や配管等において堆積物が生成し易く、除害装置を停止して堆積物を除去する作業が必要となる。なお、堆積物としてはタングステン(W)の酸化物などが挙げられるが、これ以外の固形物も生成する。 In a water-cooled combustion type abatement device, deposits are likely to form inside the abatement device, in the piping, etc., and it is necessary to stop the abatement device and remove the deposits. Note that the deposits include oxides of tungsten (W), but other solids are also generated.
 従来の除害装置にあっては、堆積物が生成した場合、装置を停止し、作業者が洗浄作業を行うようにしており、手間、コスト及び時間がかかっていた。 In conventional abatement equipment, when deposits are generated, the equipment is stopped and the operator performs cleaning work, which takes effort, cost, and time.
 特許文献2には、湿式スクラバー内の底部にジェットスプレーノズルを設置し、上向きに洗浄水を噴出させてスクラバー内の多孔板に吹き付け、物理的に堆積付着物を剥離除去することが記載されているが、湿式スクラバー内部を十分に洗浄することはできない。 Patent Document 2 describes that a jet spray nozzle is installed at the bottom of a wet scrubber, and cleaning water is sprayed upward onto a porous plate in the scrubber to physically peel off and remove deposits. However, it is not possible to thoroughly clean the inside of a wet scrubber.
 本発明は、排ガス処理設備における堆積物や付着物などの主にタングステンの酸化物を主成分とする固形物を短時間で十分に除去することができる排ガス処理設備の洗浄方法、洗浄液及び洗浄剤を提供することを課題とする。 The present invention provides a method for cleaning exhaust gas treatment equipment, a cleaning liquid, and a cleaning agent that can sufficiently remove solid substances mainly composed of tungsten oxides such as deposits and attachments in exhaust gas treatment equipment in a short time. The challenge is to provide the following.
 本発明の排ガス処理設備の洗浄方法は、電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄方法であって、前記湿式排ガス処理設備の洗浄対象をpH8~14のアルカリ洗浄液で洗浄する。 The cleaning method for exhaust gas treatment equipment of the present invention is a cleaning method for exhaust gas treatment equipment that processes exhaust gas from an electronic component manufacturing process, and the object to be cleaned in the wet exhaust gas treatment equipment is cleaned with an alkaline cleaning liquid having a pH of 8 to 14.
 本発明の一態様では、前記排ガス処理設備は、熱により排ガスを分解処理する除害装置と、該除害装置からのガスが導入される湿式スクラバーとを有しており、前記排ガス処理設備の洗浄方法は、該スクラバー又はその構成部材を洗浄する方法である。 In one aspect of the present invention, the exhaust gas treatment equipment includes an abatement device that decomposes exhaust gas using heat, and a wet scrubber into which gas from the abatement device is introduced. The cleaning method is a method of cleaning the scrubber or its constituent members.
 本発明の一態様では、前記湿式スクラバーは、下部水槽と、該下部水槽から水が循環ポンプによって循環供給される散水手段とを有しており、前記排ガス処理設備の洗浄方法は、該下部水槽に洗浄剤水溶液を添加する工程と、洗浄剤水溶液が添加された下部水槽内の水を前記散水手段に供給する工程とを有している。 In one aspect of the present invention, the wet scrubber includes a lower water tank and a water sprinkling means to which water is circulated and supplied from the lower water tank by a circulation pump, and the method for cleaning the exhaust gas treatment equipment includes: and a step of supplying the water in the lower water tank to which the aqueous detergent solution has been added to the water sprinkling means.
 本発明の一態様では、前記湿式スクラバーはミストキャッチャーを備えており、該ミストキャッチャーの上側に散水器を配置し、該散水器にpH8~14のアルカリ洗浄液を供給してミストキャッチャー及びそれよりも下側の湿式スクラバー内部の洗浄を行う。 In one aspect of the present invention, the wet scrubber includes a mist catcher, a water sprinkler is disposed above the mist catcher, and an alkaline cleaning solution with a pH of 8 to 14 is supplied to the water sprinkler to remove the mist catcher and the water sprinkler. Clean the inside of the lower wet scrubber.
 本発明の一態様では、前記湿式スクラバーから一部の構成部材を取り外し、pH8~14のアルカリ洗浄液に浸漬して洗浄する。 In one aspect of the present invention, some components are removed from the wet scrubber and cleaned by immersing them in an alkaline cleaning solution with a pH of 8 to 14.
 本発明の洗浄液は、電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄液であって、pH8~14のアルカリ溶液よりなる。 The cleaning liquid of the present invention is a cleaning liquid for exhaust gas treatment equipment that processes exhaust gas from electronic component manufacturing processes, and is composed of an alkaline solution with a pH of 8 to 14.
 本発明の洗浄剤は、電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄液を調製するための洗浄剤であって、該洗浄液をpH8~14のアルカリ溶液とするためのアルカリ剤よりなる。 The cleaning agent of the present invention is a cleaning agent for preparing a cleaning liquid for exhaust gas treatment equipment that treats exhaust gas from an electronic component manufacturing process, and comprises an alkaline agent for making the cleaning liquid an alkaline solution with a pH of 8 to 14. .
 本発明の一態様では、前記アルカリは、コリン又はアンモニアである。 In one aspect of the present invention, the alkali is choline or ammonia.
 本発明によると、排ガス処理設備における固形物を洗浄剤により短時間で十分に溶解及び/又は分散除去することができる。本発明を半導体等の製造設備に適用した場合には、半導体等の製造プロセスマシンの稼動効率を向上させることができ、半導体等の生産性が向上する。 According to the present invention, solid matter in exhaust gas treatment equipment can be sufficiently dissolved and/or dispersed and removed in a short time using a cleaning agent. When the present invention is applied to manufacturing equipment for semiconductors, etc., the operating efficiency of the manufacturing process machine for semiconductors, etc. can be improved, and the productivity of semiconductors, etc. is improved.
除害設備の構成図である。FIG. 2 is a configuration diagram of the abatement equipment. スクラバーの構成図である。It is a block diagram of a scrubber. 試験結果を示すグラフである。It is a graph showing test results. 試験結果を示すグラフである。It is a graph showing test results. 試験結果を示すグラフである。It is a graph showing test results.
 以下、図1,2を参照して実施の形態に係る方法が適用される除害設備の一例について説明する。 Hereinafter, an example of the abatement equipment to which the method according to the embodiment is applied will be described with reference to FIGS. 1 and 2.
 この除害設備では、塔状の燃焼室1の上部に設けられたバーナ2に対し、半導体製造プロセスからの排ガスとブロワーからの空気が供給され、燃焼室1内において排ガスが燃焼処理される。 In this abatement equipment, exhaust gas from a semiconductor manufacturing process and air from a blower are supplied to a burner 2 provided at the top of a tower-shaped combustion chamber 1, and the exhaust gas is combusted within the combustion chamber 1.
 なお、排ガスとしては電子部品製造プロセスで発生するガスが好適であり、特にWFを含有するものが好適である。シラン類(SiH,Si,SiHClなど)、シラン以外の他のガス成分(B,PH,NH,NO,H,HSe,GeHe,AsH,CH,C,CO,Cl,F,ClF,NF,CH,NO,O,CF,C,C,CHFなど)を含んでいてもよい。 Note that the exhaust gas is preferably a gas generated in an electronic component manufacturing process, and a gas containing WF 6 is particularly preferred. Silanes (SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , etc.), gas components other than silane (B 2 H 6 , PH 3 , NH 3 , N 2 O, H 2 , H 2 Se, GeHe, AsH3 , CH4 , C2H4 , CO , Cl2, F2, ClF3 , NF3 , CH2F2 , NO , O2 , CF4 , C4F8 , C5F8 , CHF3 ) may also be included.
 燃焼室1の内壁面に沿って水を流すようにノズル(図示略)が設けられており、該ノズルに対して給水ラインによって水が供給される。このノズルから流出した水が燃焼室1の内壁面を水膜状に流れ下り、内壁面が燃焼熱から防護される。なお、燃焼室1の内壁面を水が水膜状に流れることにより、燃焼ガス中の水可溶成分を吸収すると共に、微粒子を捕捉する。また、ガス温度を低下させる。 A nozzle (not shown) is provided to flow water along the inner wall surface of the combustion chamber 1, and water is supplied to the nozzle by a water supply line. The water flowing out from this nozzle flows down the inner wall surface of the combustion chamber 1 in the form of a water film, and the inner wall surface is protected from combustion heat. Note that water flowing in the form of a water film on the inner wall surface of the combustion chamber 1 absorbs water-soluble components in the combustion gas and captures particulates. It also lowers the gas temperature.
 内壁面を流れ下った水は、燃焼室底部のピット1aに溜まる。 Water flowing down the inner wall surface collects in the pit 1a at the bottom of the combustion chamber.
 前記ノズルへの給水ラインは、配管3、ポンプ4、配管5、該配管5から分岐した配管6,7を有している。配管6は上記ノズルに接続され、配管7は燃焼室1の底部のピット1aに給水するように設けられている。 The water supply line to the nozzle includes a pipe 3, a pump 4, a pipe 5, and pipes 6 and 7 branched from the pipe 5. A pipe 6 is connected to the nozzle, and a pipe 7 is provided to supply water to the pit 1a at the bottom of the combustion chamber 1.
 燃焼室1に隣接して1次洗煙室11が設置されている。燃焼室1の下部と1次洗煙室11の下部同士はダクト12によって連通しており、燃焼室1からのガスが該ダクト12を介して1次洗煙室11内に導入され、1次洗煙室11内を上昇する。 A primary smoke cleaning chamber 11 is installed adjacent to the combustion chamber 1. The lower part of the combustion chamber 1 and the lower part of the primary smoke cleaning chamber 11 communicate with each other through a duct 12, and gas from the combustion chamber 1 is introduced into the primary smoke cleaning chamber 11 through the duct 12, and the gas from the combustion chamber 1 is introduced into the primary smoke cleaning chamber 11 through the duct 12. It ascends inside the smoke washing chamber 11.
 なお、燃焼室1のピット1a内の水の一部は、該ダクト12を通って1次洗煙室11のピット11aにオーバーフローにより流出する。燃焼室1のピット1a内の水の一部は、ダクト12とは別の水移送配管によってピット11aに移送されてもよい。 Note that a part of the water in the pit 1a of the combustion chamber 1 flows out through the duct 12 into the pit 11a of the primary smoke cleaning chamber 11 by overflow. Part of the water in the pit 1a of the combustion chamber 1 may be transferred to the pit 11a by a water transfer pipe separate from the duct 12.
 1次洗煙室11の底部のピット11aの水がポンプ14及び配管15を介して散水器16によって散水される。1次洗煙室11内を上昇してきたガスが、散水器16から散水された水と接触してガス中の水可溶成分や微粒子が水に吸収ないし捕捉される。 Water in the pit 11a at the bottom of the primary smoke washing chamber 11 is sprinkled by a sprinkler 16 via a pump 14 and piping 15. The gas rising in the primary smoke washing chamber 11 comes into contact with water sprinkled from the water sprinkler 16, and water-soluble components and fine particles in the gas are absorbed or captured by the water.
 1次洗煙室11を通り抜けたガスは、ガス出口17からダクト18及び送風機19により、ガス導入口25を通って湿式スクラバー20に導入される。 The gas that has passed through the primary smoke washing chamber 11 is introduced from the gas outlet 17 into the wet scrubber 20 through the gas inlet 25 by the duct 18 and the blower 19.
 湿式スクラバー20内の上部のノズル21(散水手段)に対し、湿式スクラバー20内の底部の水が循環ポンプ23及び配管22によって供給される。ガスは、該ノズル21から散水された水と接触して水可溶成分と微粒子が水に吸収ないし捕捉された後、流出口26から流出する。湿式スクラバー20にはガス洗浄用水が配管24によって補給される。 Water at the bottom of the wet scrubber 20 is supplied to the nozzle 21 (water sprinkling means) at the top of the wet scrubber 20 by a circulation pump 23 and piping 22. The gas comes into contact with the water sprayed from the nozzle 21, and after the water-soluble components and fine particles are absorbed or captured by the water, the gas flows out from the outlet 26. The wet scrubber 20 is supplied with water for gas cleaning through a pipe 24.
 燃焼室1,1次洗煙室11及びスクラバー20の底部の水は、配管31,32,33を介して取り出され、排水処理設備(図示略)に送水されて処理される。 The water at the bottom of the combustion chamber 1, primary smoke chamber 11, and scrubber 20 is taken out via pipes 31, 32, and 33, and is sent to a wastewater treatment facility (not shown) for treatment.
 湿式スクラバー20の構成の詳細を図2に示す。湿式スクラバー20内の上部には、ミストキャッチャー40が設けられている。ノズル21の下側にはグレイチング41が設けられている。 The details of the structure of the wet scrubber 20 are shown in FIG. 2. A mist catcher 40 is provided at the upper part of the wet scrubber 20. A grating 41 is provided below the nozzle 21.
 湿式スクラバー20の下部水槽44の一部は側方に張り出しており、その上側にポンプ23が設置されている。下部水槽44内の水は、配管22aによってポンプ23に吸引され、配管22を介してノズル21に送水される。 A part of the lower water tank 44 of the wet scrubber 20 protrudes laterally, and the pump 23 is installed above it. The water in the lower water tank 44 is sucked into the pump 23 by the piping 22a, and is sent to the nozzle 21 via the piping 22.
 ノズル21から散水された水は、中間プレート42上に落下し、該中間プレート42に設けられた落水孔43を通って下部水槽44内に落下する。 The water sprayed from the nozzle 21 falls onto the intermediate plate 42 , passes through the water drop hole 43 provided in the intermediate plate 42 , and falls into the lower water tank 44 .
 前記ガス流入口25は、中間プレート42よりも上側の湿式スクラバー側壁面に設けられている。 The gas inlet 25 is provided on the side wall surface of the wet scrubber above the intermediate plate 42.
 下部水槽44に前記配管24が接続されている。下部水槽44の側面の上位箇所に溢流口45が設けられている。下部水槽44内の水位が該溢流口45よりも高くなると、下部水槽44内の水が溢流口45から中継タンク46に流出し、該中継タンク46から配管47を介して前記配管33に流出する。 The piping 24 is connected to the lower water tank 44. An overflow port 45 is provided at an upper portion of the side surface of the lower water tank 44. When the water level in the lower water tank 44 becomes higher than the overflow port 45, the water in the lower water tank 44 flows out from the overflow port 45 to the relay tank 46, and from the relay tank 46 to the pipe 33 via the pipe 47. leak.
 下部水槽44内の底部と配管47とを連通するように配管48が設けられており、該配管48に弁49が設けられている。弁49は下部水槽44から水抜きする場合のみ開とされ、その他のときは閉とされている。 A pipe 48 is provided to communicate the bottom of the lower water tank 44 with the pipe 47, and a valve 49 is provided in the pipe 48. The valve 49 is opened only when draining water from the lower water tank 44, and is closed at other times.
 下部水槽44に対し、薬注装置50から洗浄剤の水溶液が配管51を介して注入可能とされている。薬注装置50は、洗浄剤の水溶液を貯留するタンクと、薬注ポンプと、該薬注ポンプを制御する制御回路とを有している。 An aqueous solution of cleaning agent can be injected into the lower water tank 44 from a chemical injection device 50 via a pipe 51. The chemical injection device 50 includes a tank that stores an aqueous solution of a cleaning agent, a chemical injection pump, and a control circuit that controls the chemical injection pump.
 この実施の形態では、配管22と中継タンク46にそれぞれpH計52,53が設けられており、pH計52,53の検出信号が該制御回路に送信される。 In this embodiment, pH meters 52 and 53 are provided in the piping 22 and the relay tank 46, respectively, and detection signals from the pH meters 52 and 53 are transmitted to the control circuit.
 この湿式スクラバー20の固形物除去洗浄を行うには、送風機を停止した後、制御回路に洗浄開始指令信号を入力する。この信号が与えられると、制御回路は薬注ポンプを始動させ、pH計52の検出pHが8~14、特に10~13、とりわけ11~13となるように薬注を行う。 To perform solid matter removal cleaning of the wet scrubber 20, after stopping the blower, a cleaning start command signal is input to the control circuit. When this signal is given, the control circuit starts the chemical injection pump and performs chemical injection such that the pH detected by the pH meter 52 is 8 to 14, particularly 10 to 13, particularly 11 to 13.
 薬注装置50によって湿式スクラバー20に洗浄剤水溶液を薬注することにより、ノズル21からpH8~14のアルカリ溶液よりなる洗浄液が噴出し、堆積物や付着物などの固形物が溶解及び/又は分散する。 By injecting a cleaning agent aqueous solution into the wet scrubber 20 by the chemical injection device 50, a cleaning liquid consisting of an alkaline solution with a pH of 8 to 14 is ejected from the nozzle 21, and solid matter such as deposits and attachments is dissolved and/or dispersed. do.
 上記実施の形態では、排ガス処理を停止した状態で湿式スクラバー20の洗浄を実施しているが、排ガス処理を継続した状態で洗浄を実施してもよい。また、洗浄は定期的に実施してもよく、固形物が付着して排気能力や排ガス処理性能が落ちた場合などに実施してもよい。 In the above embodiment, the wet scrubber 20 is cleaned while the exhaust gas treatment is stopped, but the cleaning may be performed while the exhaust gas treatment is continued. Further, cleaning may be carried out periodically, or when the exhaust capacity and exhaust gas treatment performance are degraded due to adhesion of solid matter.
 このように、この洗浄方法によると、スクラバー20の固形物をpH8~14、特にpH10~13、とりわけpH11~13のアルカリ洗浄液によって短時間で十分に溶解除去することができ、作業時間の短縮及び作業労務コストの低減を図ることができる。 As described above, according to this cleaning method, the solid matter in the scrubber 20 can be sufficiently dissolved and removed in a short time with an alkaline cleaning solution having a pH of 8 to 14, particularly a pH of 10 to 13, and especially a pH of 11 to 13, thereby shortening the working time and It is possible to reduce labor costs.
 また、排ガス処理を継続した状態で洗浄を実施する態様にあっては、排ガス処理設備の停止に伴う半導体製造プロセスの稼動停止も防止され、生産性が向上する。 In addition, in an embodiment in which cleaning is performed while exhaust gas treatment is continued, the shutdown of the semiconductor manufacturing process due to the shutdown of the exhaust gas treatment equipment is also prevented, and productivity is improved.
 洗浄剤としては、水酸化ナトリウム、水酸化カリウム、アンモニア、メタ珪酸ナトリウム等の無機アルカリ剤、コリン、TMAH等の有機系アルカリ剤などのアルカリ系薬剤が好適であるが、これに限定されない。洗浄剤は、アルカリ系薬剤の他に、シリカスケール洗浄剤や、発泡剤(過酸化水等)やキレート剤(EDTA、ポリリン酸等)などの溶解補助剤、カルシウムスケール抑制剤、スライムコントロール剤(ジクロログリオキシム、2,2-ジブロモ-2-ニトロエタノール、2,2-ジブロモ-3-ニトリロプロピオンアミド、クロロスルファミン酸、ビス-1,4-ブロモアセトキシ-2-ブテン、アメトリン、5-クロロ-2-メチル-4-イソチアゾリン-3-オン)などを含んでもよい。アルカリ剤は、電子部品工場等からの廃アルカリであってもよい。 As the cleaning agent, alkaline agents such as inorganic alkaline agents such as sodium hydroxide, potassium hydroxide, ammonia, and sodium metasilicate, and organic alkaline agents such as choline and TMAH are suitable, but are not limited thereto. In addition to alkaline chemicals, cleaning agents include silica scale cleaning agents, solubilizing agents such as foaming agents (peroxide water, etc.) and chelating agents (EDTA, polyphosphoric acid, etc.), calcium scale inhibitors, slime control agents ( Dichloroglyoxime, 2,2-dibromo-2-nitroethanol, 2,2-dibromo-3-nitrilopropionamide, chlorosulfamic acid, bis-1,4-bromoacetoxy-2-butene, ametrine, 5-chloro- 2-methyl-4-isothiazolin-3-one) and the like. The alkaline agent may be a waste alkali from an electronic parts factory or the like.
 上記実施の形態は本発明の一例であり、本発明は上記以外の形態とされてもよい。例えば、上記実施の形態では、循環ポンプ23によりノズル21から洗浄剤水溶液を流出させているが、下部水槽44内に水中ポンプを配置し、ミストキャッチャー40の上側に散水器を配置し、水中ポンプの吐出水をホースを介して該散水器に供給して散水し、ミストキャッチャー40やその下側の領域の固形物を溶解及び/又は分散除去するようにしてもよい。 The above embodiment is an example of the present invention, and the present invention may have other forms than the above. For example, in the embodiment described above, the cleaning agent aqueous solution is caused to flow out from the nozzle 21 by the circulation pump 23, but a submersible pump is arranged in the lower water tank 44, a water sprinkler is arranged above the mist catcher 40, and the submersible pump Discharged water may be supplied to the sprinkler through a hose to sprinkle water to dissolve and/or disperse and remove solids in the mist catcher 40 and the area below it.
 この水中ポンプは、循環ポンプ23の近傍に設けた下部水槽点検口を介して下部水槽44内に配置することができる。また、ホースは、該下部水槽点検口を介して湿式スクラバー20外に引き出し、湿式スクラバー20の側面の点検窓(図示略)又は流出口26を通してスクラバー20内の上部に引き込むことができる。 This submersible pump can be placed in the lower water tank 44 through a lower water tank inspection port provided near the circulation pump 23. Further, the hose can be drawn out of the wet scrubber 20 through the lower water tank inspection port and into the upper part of the scrubber 20 through the inspection window (not shown) on the side of the wet scrubber 20 or the outlet 26.
 上記実施の形態では、アルカリ洗浄剤水溶液を下部水槽44に添加し、下部水槽44内の水をpH8~14の洗浄液としているが、薬注装置50のタンク内にpH8~14のアルカリ洗浄液を貯えておき、この洗浄液をノズル21やミストキャッチャー40の上側の散水器に供給するようにしてもよい。 In the embodiment described above, an alkaline cleaning agent aqueous solution is added to the lower water tank 44, and the water in the lower water tank 44 is used as a cleaning liquid with a pH of 8 to 14. Then, this cleaning liquid may be supplied to the nozzle 21 or a water sprinkler above the mist catcher 40.
 上記実施の形態では、湿式スクラバー内部を洗浄液で洗浄しているが、湿式スクラバーの構成部材(例えばノズル、ミストキャッチャー、下部水槽など)をスクラバーから取り外し、pH8~14の洗浄液を貯えた洗浄槽内の洗浄液に浸漬して洗浄するようにしてもよい。 In the above embodiment, the inside of the wet scrubber is cleaned with a cleaning liquid, but the components of the wet scrubber (for example, the nozzle, mist catcher, lower water tank, etc.) are removed from the scrubber, and the cleaning tank containing the cleaning liquid with a pH of 8 to 14 is cleaned. It may also be cleaned by immersing it in a cleaning solution.
 上記実施の形態は湿式スクラバー20の固形物を除去するものとしているが、1次洗煙室11や送風機19などの他の洗浄対象をpH8~14のアルカリ洗浄液で洗浄するようにしてもよい。この場合も、洗浄液を循環させて洗浄対象に供給してもよく、構成部材を取り外して洗浄液に浸漬し、洗浄してもよい。 In the above embodiment, solid matter is removed from the wet scrubber 20, but other objects to be cleaned such as the primary smoke cleaning chamber 11 and the blower 19 may be cleaned with an alkaline cleaning liquid having a pH of 8 to 14. In this case as well, the cleaning liquid may be circulated and supplied to the object to be cleaned, or the component may be removed and immersed in the cleaning liquid for cleaning.
 上記実施の形態では、除害装置は「燃焼式」であるが、これに限定されず、電熱式やプラズマ式などの熱を利用して除害するものであればよい。 In the above embodiment, the abatement device is a "combustion type," but it is not limited to this, and any device that uses heat, such as an electric heating type or a plasma type, may be used.
[試験例1]
 各種アルカリ水溶液による固形物の溶解試験を行った。なお、参考例として、超純水(UPW)に対する溶解性も試験した。
[Test example 1]
Solid substance dissolution tests were conducted using various alkaline aqueous solutions. As a reference example, solubility in ultrapure water (UPW) was also tested.
<試験方法>
≪サンプル固形物≫
半導体製造プロセスの除害装置後段に設置されたスクラバーから採取した堆積物をサンプルとした。成分を分析したところ、W含有率がドライベースで約55wt%、Siがドライベースで約10wt%であった。
<Test method>
≪Sample solid matter≫
The sample was sediment collected from a scrubber installed after the abatement equipment in the semiconductor manufacturing process. When the components were analyzed, the W content was about 55 wt% on a dry basis, and the Si content was about 10 wt% on a dry basis.
≪アルカリの種類及び濃度≫
 アルカリとしてNaOH、コリン、及びアンモニアの水溶液を用いた。濃度は、重量%(wt%)として0.01、0.1、1wt%とした。
≪Type and concentration of alkali≫
Aqueous solutions of NaOH, choline, and ammonia were used as alkalis. The concentrations were 0.01, 0.1, and 1 wt% as weight % (wt%).
≪試験手順≫
 試験手順は以下の通りとした。
i) 固形物を0.3g(初期量y)とり、300mlのアルカリ水溶液に加える。
ii) スターラーで10分間撹拌する。
iii) 上記ii)の溶液を1μmのガラスフィルターで吸引濾過し、フィルター上の残渣の乾燥重量を測定する。
iv) 固形物の初期量のうち、ガラスフィルターを透過した量(x)の割合を、溶解率として算出する。
 すなわち、
    溶解率=(1-x/y)×100%
である。
v) 残渣のSEM EDXを測定する。
≪Test procedure≫
The test procedure was as follows.
i) Take 0.3 g (initial amount y) of the solid and add it to 300 ml of aqueous alkaline solution.
ii) Stir with a stirrer for 10 minutes.
iii) The solution in ii) above is suction filtered through a 1 μm glass filter, and the dry weight of the residue on the filter is measured.
iv) Calculate the ratio of the amount (x) of the initial amount of solids that passed through the glass filter as the dissolution rate.
That is,
Dissolution rate = (1-x/y) x 100%
It is.
v) Measure the SEM EDX of the residue.
<試験結果1>
 各アルカリ水溶液に対する固形物の溶解性を調べた。結果を表1及び図3に示した。
<Test result 1>
The solubility of solids in each alkaline aqueous solution was investigated. The results are shown in Table 1 and FIG. 3.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 表1及び図3のとおり、撹拌時間10分の条件においては、コリン、アンモニアが高い溶解性を示すことが分かった。
 また、アルカリの濃度が高くなるほど、溶解率が高くなることが示唆された。
 一方で、NaOHでは、濃度が増加しても、溶解率が高くなっていない場合があった。
As shown in Table 1 and FIG. 3, it was found that choline and ammonia exhibit high solubility under conditions of stirring time of 10 minutes.
It was also suggested that the higher the alkali concentration, the higher the dissolution rate.
On the other hand, with NaOH, even if the concentration increased, the dissolution rate did not increase in some cases.
<試験結果2>
 コリンを用いて固形物を溶解する場合における固形物の溶解に必要なコリンの濃度及び撹拌時間の検討を行った。結果を表2及び図4に示す。
<Test results 2>
The concentration of choline and stirring time necessary for dissolving solids using choline were investigated. The results are shown in Table 2 and FIG. 4.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
 表2及び図4のとおり、コリン0.1wt%の場合、溶解する固形物成分が残存していると、撹拌時間の増加に伴い、徐々に反応が進み、溶解率が増加することが認められた。
 コリン1wt%の場合、アルカリの濃度が固形物濃度に対して十分に高いと、反応時間が短くても溶解することが認められた。
As shown in Table 2 and Figure 4, in the case of 0.1 wt% choline, if solid components to be dissolved remain, the reaction gradually progresses and the dissolution rate increases as the stirring time increases. Ta.
In the case of 1 wt% choline, it was found that if the alkali concentration was sufficiently high relative to the solid matter concentration, it could be dissolved even if the reaction time was short.
<考察>
 図3、4の結果を見ると、1wt%のコリンとアンモニアが高い溶解率を示した。
 これらのことから、高濃度のコリンとアンモニアは、本固形物の溶解能が高いことが認められた。
<Consideration>
Looking at the results in Figures 3 and 4, 1 wt% choline and ammonia showed a high dissolution rate.
From these results, it was confirmed that high concentrations of choline and ammonia have a high ability to dissolve the solid substance.
[試験例2]
 コリン水溶液に対する固形物(スクラバーから採取した堆積物)の添加量を異ならせた場合の溶解試験を行った。
[Test example 2]
A dissolution test was conducted with different amounts of solids (sediment collected from a scrubber) added to the choline aqueous solution.
<試験方法>
 100mLのコリン1wt%水溶液に対し、0.5,1,2,3又は5wt%となるように固形物(半導体製造プロセスの除害装置後段に設置されたスクラバーから採取した堆積物)を加えてサンプルNo.1~5とした。各溶液をスターラーで撹拌し、pH及び外観(ビーカーの底部から写真を撮影)の経時変化を測定及び観察した。表3に、各サンプルの試験条件を示す。溶液量はすべて100mLであるため、固形物の添加量がそのままwt%濃度となる。
<Test method>
To 100 mL of 1 wt% choline aqueous solution, add solid matter (sediments collected from a scrubber installed after the abatement equipment in the semiconductor manufacturing process) to a concentration of 0.5, 1, 2, 3, or 5 wt%. Sample No. I gave it a rating of 1 to 5. Each solution was stirred with a stirrer, and changes in pH and appearance (photographs were taken from the bottom of the beaker) over time were measured and observed. Table 3 shows the test conditions for each sample. Since the volume of all solutions is 100 mL, the amount of solid added directly becomes the wt% concentration.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
<結果>
 各サンプルについて、撹拌し、経時的にpHを測定した結果を表4に示す。また、この結果をグラフ化したものを図5に示す。
<Results>
Table 4 shows the results of stirring and measuring the pH of each sample over time. Further, a graph of this result is shown in FIG.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
 図5を見ると、固形物濃度が2~5wt%の溶液(サンプルNo.3,4,5)は、攪拌30~45分でpHが7.2~7.6まで低下し、その後安定した。これは、コリン量に対し固形物量が多いことを意味している。外観観察の結果を見ても、サンプルNo.3~5では明らかな固形物の溶け残りが見られた。 Looking at Figure 5, the pH of the solutions with a solid concentration of 2 to 5 wt% (sample Nos. 3, 4, and 5) decreased to 7.2 to 7.6 after 30 to 45 minutes of stirring, and then stabilized. . This means that the amount of solid matter is large compared to the amount of choline. Looking at the results of appearance observation, sample No. In samples 3 to 5, clear undissolved solids were observed.
 一方で、固形物濃度が0.5~1wt%の溶液(サンプルNo.1,2)では、撹拌に伴いpHが減少し、24時間撹拌後もアルカリ域でほぼ安定した。外観観察の結果を見ても、サンプルNo.1では撹拌5時間後で、サンプルNo.2では撹拌24時間後で固形物がほとんど溶解した様子が見られた。 On the other hand, in the solutions with a solid concentration of 0.5 to 1 wt% (sample Nos. 1 and 2), the pH decreased with stirring and remained almost stable in the alkaline range even after 24 hours of stirring. Looking at the results of appearance observation, sample No. In sample No. 1, after 5 hours of stirring, sample No. In No. 2, it was observed that most of the solids were dissolved after 24 hours of stirring.
 このことより、洗浄液のpHは8以上であることが必要であり、短時間で十分に固形物を溶解するためにはpH10以上が必要であることがわかる。また、pHの変化によって洗浄効果を確認することが可能であることも示唆されている。 From this, it can be seen that the pH of the cleaning liquid needs to be 8 or higher, and in order to sufficiently dissolve the solids in a short time, the pH needs to be 10 or higher. It has also been suggested that the cleaning effect can be confirmed by changes in pH.
<考察>
 試験結果から、以下の3点の知見が得られた。
 ・固形物の溶解に伴い、pHが減少する。
 ・固形物が残存している場合、pHが中性域で安定する。
 ・pHが高いほど、固形物を溶解させる効果が高い。
<Consideration>
The following three findings were obtained from the test results.
- pH decreases as solids dissolve.
・If solid matter remains, the pH will be stable in the neutral range.
- The higher the pH, the higher the effect of dissolving solids.
 これらのことから、現場での固形物の洗浄を考えた場合、pHが中性に達したときにアルカリを追加注入し、アルカリ域でしばらくpHが安定したならば固形物が溶解したと判断する制御方法が考えられる。また、アルカリは濃いほど反応速度が速くなるため、短時間での洗浄が求められる場合、固形物濃度に対して同濃度以上のアルカリで洗浄するべきであると考える。 Based on these facts, when considering on-site cleaning of solid materials, additional alkali is injected when the pH reaches neutrality, and if the pH stabilizes for a while in the alkaline range, it is determined that the solids have dissolved. Control methods can be considered. Furthermore, the reaction rate becomes faster as the concentration of the alkali increases, so if cleaning is required in a short time, it is considered that cleaning should be performed with an alkali having a concentration equal to or higher than the concentration of solids.
 本発明を特定の態様を用いて詳細に説明したが、本発明の意図と範囲を離れることなく様々な変更が可能であることは当業者に明らかである。
 本出願は、2022年3月30日付で出願された日本特許出願2022-055285に基づいており、その全体が引用により援用される。
Although the invention has been described in detail using specific embodiments, it will be apparent to those skilled in the art that various changes can be made without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application No. 2022-055285 filed on March 30, 2022, which is incorporated by reference in its entirety.
 1 燃焼室
 2 バーナ
 4 ポンプ
 11 1次洗煙室
 20 スクラバー
 21 ノズル
 23 循環ポンプ
 40 ミストキャッチャー
 44 下部水槽
 46 中継タンク
 50 薬注装置
 52,53 pH計

 
1 Combustion chamber 2 Burner 4 Pump 11 Primary smoke cleaning chamber 20 Scrubber 21 Nozzle 23 Circulation pump 40 Mist catcher 44 Lower water tank 46 Relay tank 50 Chemical dosing device 52, 53 pH meter

Claims (10)

  1.  電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄方法であって、
     前記排ガス処理設備の洗浄対象をpH8~14のアルカリ洗浄液で洗浄する排ガス処理設備の洗浄方法。
    A method for cleaning exhaust gas treatment equipment for treating exhaust gas from an electronic component manufacturing process, the method comprising:
    A method for cleaning exhaust gas treatment equipment, comprising cleaning an object to be cleaned in the exhaust gas treatment equipment with an alkaline cleaning solution having a pH of 8 to 14.
  2.  前記排ガス処理設備は、熱により排ガスを分解処理する除害装置と、該除害装置からのガスが導入される湿式スクラバーとを有しており、
     前記排ガス処理設備の洗浄方法は、該湿式スクラバー又はその構成部材を洗浄する方法である、請求項1の排ガス処理設備の洗浄方法。
    The exhaust gas treatment equipment includes an abatement device that decomposes exhaust gas using heat, and a wet scrubber into which gas from the abatement device is introduced,
    2. The method of cleaning exhaust gas treatment equipment according to claim 1, wherein the method of cleaning exhaust gas treatment equipment is a method of cleaning the wet scrubber or its constituent members.
  3.  前記湿式スクラバーは、下部水槽と、該下部水槽から水が循環ポンプによって循環供給される散水手段とを有しており、
     前記排ガス処理設備の洗浄方法は、該下部水槽に洗浄剤水溶液を添加する工程と、洗浄剤水溶液が添加された下部水槽内の水を前記散水手段に供給する工程とを有している、請求項2の排ガス処理設備の洗浄方法。
    The wet scrubber has a lower water tank and a water sprinkling means to which water is circulated and supplied from the lower water tank by a circulation pump,
    The method for cleaning exhaust gas treatment equipment includes the steps of: adding a cleaning agent aqueous solution to the lower water tank; and supplying water in the lower water tank to which the cleaning agent aqueous solution has been added to the watering means. Item 2. Method for cleaning exhaust gas treatment equipment.
  4.  前記湿式スクラバーはミストキャッチャーを備えており、
     該ミストキャッチャーの上側に散水器を配置し、
     該散水器にpH8~14のアルカリ洗浄液を供給してミストキャッチャー及びそれよりも下側の湿式スクラバー内部の洗浄を行う、請求項2の排ガス処理設備の洗浄方法。
    The wet scrubber is equipped with a mist catcher,
    Place a water sprinkler above the mist catcher,
    3. The method for cleaning exhaust gas treatment equipment according to claim 2, wherein an alkaline cleaning liquid having a pH of 8 to 14 is supplied to the water sprinkler to clean the inside of the mist catcher and the wet scrubber below it.
  5.  前記湿式スクラバーから一部の構成部材を取り外し、pH8~14のアルカリ洗浄液に浸漬して洗浄する、請求項2の排ガス処理設備の洗浄方法。 The method for cleaning exhaust gas treatment equipment according to claim 2, wherein some components are removed from the wet scrubber and cleaned by immersing them in an alkaline cleaning solution with a pH of 8 to 14.
  6.  前記アルカリは、コリン又はアンモニアである、請求項1~5のいずれかの排ガス処理設備の洗浄方法。 The method for cleaning exhaust gas treatment equipment according to any one of claims 1 to 5, wherein the alkali is choline or ammonia.
  7.  電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄液であって、
     pH8~14のアルカリ溶液よりなる湿式排ガス処理設備の洗浄液。
    A cleaning liquid for exhaust gas treatment equipment that processes exhaust gas from electronic component manufacturing processes,
    A cleaning solution for wet exhaust gas treatment equipment consisting of an alkaline solution with a pH of 8 to 14.
  8.  前記アルカリは、コリン又はアンモニアである、請求項7の排ガス処理設備の洗浄液。 The cleaning liquid for exhaust gas treatment equipment according to claim 7, wherein the alkali is choline or ammonia.
  9.  電子部品製造プロセスからの排ガスを処理する排ガス処理設備の洗浄液を調製するための洗浄剤であって、
     該洗浄液をpH8~14のアルカリ溶液とするためのアルカリ剤よりなる、排ガス処理設備用洗浄剤。
    A cleaning agent for preparing a cleaning liquid for exhaust gas treatment equipment that processes exhaust gas from an electronic component manufacturing process,
    A cleaning agent for exhaust gas treatment equipment, comprising an alkaline agent for making the cleaning liquid an alkaline solution with a pH of 8 to 14.
  10.  前記アルカリ剤は、コリン又はアンモニアである、請求項9の排ガス処理設備の洗浄剤。

     
    The cleaning agent for exhaust gas treatment equipment according to claim 9, wherein the alkaline agent is choline or ammonia.

PCT/JP2023/008698 2022-03-30 2023-03-08 Cleaning method, cleaning liquid, and cleaning agent for exhaust gas treatment facility WO2023189306A1 (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359337A (en) * 1986-08-30 1988-03-15 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPH0557246A (en) * 1991-09-03 1993-03-09 Hoei Shokai:Kk Rotary classifier
JPH0938463A (en) * 1995-08-01 1997-02-10 Ebara Corp Treating method of waste gas from semiconductor production
JPH09192446A (en) * 1996-01-22 1997-07-29 Mitsubishi Corp Water scrubber type waste gas treating device
JP2001149755A (en) * 1999-11-30 2001-06-05 Japan Organo Co Ltd Device and method for treating waste gas containing volatile organic material
JP2006150280A (en) * 2004-11-30 2006-06-15 Kanken Techno Co Ltd Exhaust gas detoxifying apparatus for semiconductor production apparatus
WO2008072392A1 (en) * 2006-12-15 2008-06-19 Kanken Techno Co., Ltd. Method of treating discharge gas and apparatus therefor
WO2022092086A1 (en) * 2020-10-30 2022-05-05 栗田工業株式会社 Exhaust gas treatment facility

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359337A (en) * 1986-08-30 1988-03-15 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPH0557246A (en) * 1991-09-03 1993-03-09 Hoei Shokai:Kk Rotary classifier
JPH0938463A (en) * 1995-08-01 1997-02-10 Ebara Corp Treating method of waste gas from semiconductor production
JPH09192446A (en) * 1996-01-22 1997-07-29 Mitsubishi Corp Water scrubber type waste gas treating device
JP2001149755A (en) * 1999-11-30 2001-06-05 Japan Organo Co Ltd Device and method for treating waste gas containing volatile organic material
JP2006150280A (en) * 2004-11-30 2006-06-15 Kanken Techno Co Ltd Exhaust gas detoxifying apparatus for semiconductor production apparatus
WO2008072392A1 (en) * 2006-12-15 2008-06-19 Kanken Techno Co., Ltd. Method of treating discharge gas and apparatus therefor
WO2022092086A1 (en) * 2020-10-30 2022-05-05 栗田工業株式会社 Exhaust gas treatment facility

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