JPS6359267B2 - - Google Patents
Info
- Publication number
- JPS6359267B2 JPS6359267B2 JP57229255A JP22925582A JPS6359267B2 JP S6359267 B2 JPS6359267 B2 JP S6359267B2 JP 57229255 A JP57229255 A JP 57229255A JP 22925582 A JP22925582 A JP 22925582A JP S6359267 B2 JPS6359267 B2 JP S6359267B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- barrier
- layer
- semiconductor device
- adjustment layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229255A JPS59124169A (ja) | 1982-12-29 | 1982-12-29 | 化合物半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229255A JPS59124169A (ja) | 1982-12-29 | 1982-12-29 | 化合物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59124169A JPS59124169A (ja) | 1984-07-18 |
| JPS6359267B2 true JPS6359267B2 (enrdf_load_stackoverflow) | 1988-11-18 |
Family
ID=16889239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57229255A Granted JPS59124169A (ja) | 1982-12-29 | 1982-12-29 | 化合物半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59124169A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149063A (ja) * | 1983-02-16 | 1984-08-25 | Nec Corp | 半導体装置 |
-
1982
- 1982-12-29 JP JP57229255A patent/JPS59124169A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59124169A (ja) | 1984-07-18 |