JPS6358863A - Manufacture of semiconductor storage device - Google Patents

Manufacture of semiconductor storage device

Info

Publication number
JPS6358863A
JPS6358863A JP20171086A JP20171086A JPS6358863A JP S6358863 A JPS6358863 A JP S6358863A JP 20171086 A JP20171086 A JP 20171086A JP 20171086 A JP20171086 A JP 20171086A JP S6358863 A JPS6358863 A JP S6358863A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
groove
mask
substrate
capacitor electrode
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20171086A
Inventor
Ikuko Inoue
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10838Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor and the transistor being in one trench
    • H01L27/10841Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor and the transistor being in one trench the transistor being vertical

Abstract

PURPOSE:To enhance integration and improve reliability by a method wherein a capacitor electrode is embedded in an element isolating groove in a substrate and isotropic etching is accomplished against the groove ridges for the formation of recesses wherein gate electrodes are embedded. CONSTITUTION:A lattice-geometry element isolating groove 3 is formed in a substrate 1 by using a mask 2. In the groove 3, a capacitor electrode 5 is embedded through the intermediary of an element isolating/insulating film 4. An oxide film 7 is formed on the surface of the capacitor electrode 5, and the ridges of the substrate 1 facing the groove 3 containing the capacitor electrode 5 are allowed to expose themselves, and the ridges are scraped off in an isotropic etching process with the oxide film 7 and mask 2 serving as a mask for the formation of recesses 6. In the recesses 6, by self-alignment, gate electrodes 8 to be word lines are embeded. The gate electrodes 8 serve as a mask in a process of implanting the substrate 1 with an impurity for the formation of an N-type layer 9 to be a drain region. The entire surface is covered by an CVD insulating film, and then a wiring 10 built is to be a bit line. This design enables a large capacitor to realize to occupy but a small area, which in turn realizes a high-reliability enhanced integration of MOS transistors.
JP20171086A 1986-08-29 1986-08-29 Manufacture of semiconductor storage device Pending JPS6358863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20171086A JPS6358863A (en) 1986-08-29 1986-08-29 Manufacture of semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20171086A JPS6358863A (en) 1986-08-29 1986-08-29 Manufacture of semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6358863A true true JPS6358863A (en) 1988-03-14

Family

ID=16445643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20171086A Pending JPS6358863A (en) 1986-08-29 1986-08-29 Manufacture of semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6358863A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194458A (en) * 1988-01-29 1989-08-04 Nec Kyushu Ltd Semiconductor memory
EP1026740A2 (en) * 1999-02-01 2000-08-09 Infineon Technologies North America Corp. Formation of isolation layer over trench capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194458A (en) * 1988-01-29 1989-08-04 Nec Kyushu Ltd Semiconductor memory
EP1026740A2 (en) * 1999-02-01 2000-08-09 Infineon Technologies North America Corp. Formation of isolation layer over trench capacitor
EP1026740A3 (en) * 1999-02-01 2005-09-14 Infineon Technologies North America Corp. Formation of isolation layer over trench capacitor

Similar Documents

Publication Publication Date Title
US4085498A (en) Fabrication of integrated circuits containing enhancement-mode FETs and depletion-mode FETs with two layers of polycrystalline silicon utilizing five basic pattern delineating steps
US4183040A (en) MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes
JPH03248433A (en) Manufacture of semiconductor device
JPS62286270A (en) Semiconductor memory
JPS61252667A (en) Thin film transistor and manufacture thereof
JPS60186053A (en) Thin film complementary mos circuit
JPH04176168A (en) Semiconductor memory device and manufacture thereof
JPH0222868A (en) Insulated-gate field-effect transistor
JPS6430272A (en) Thin film transistor
JPS6489560A (en) Semiconductor memory
JPS60251667A (en) Thin-film transistor
JPS6484659A (en) Manufacture of semiconductor device
US5525532A (en) Method for fabricating a semiconductor device
JPH0237777A (en) Vertical type field-effect transistor
JPH0364964A (en) Manufacture of semiconductor memory device
JPH01165172A (en) Manufacture of thin film transistor
JPS62147759A (en) Manufacture of semiconductor device
JPS61174667A (en) Manufacture of semiconductor device
JPS61187272A (en) Thin-film field-effect transistor and manufacture thereof
JPH02307273A (en) Film transistor
JPS5764965A (en) Semiconductor device
JPS59181062A (en) Manufacture of mos type semiconductor device
JPH0267765A (en) Semiconductor device
JPS6384149A (en) Manufacture of semiconductor memory
JPS62136877A (en) Insulated gate type field effect transistor