JPS6358799A - Radio frequency plasma reactor in which reaction sample jetting part is inserted into plasma flame - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Object of the Invention [Field of Industrial Application] The present invention relates to a high-frequency plasma reaction device for efficiently producing reaction products.

[Advanced technology]

In a high-frequency plasma reactor, when a reaction sample is injected from the top of the plasma flame along with a gas flow such as argon, the reaction sample does not enter the flame due to the high internal pressure of the plasma flame, and instead flows toward the outer circumference of the frame. It was pushed out and scattered, attached to the inner surface of the outer circumferential wall, welded by plasma heat, and eventually destroyed the outer circumferential wall. Furthermore, even when destruction did not occur, the reaction sample passing through the frame was small, resulting in very low efficiency.

Therefore, currently the sample is injected near the bottom of the plasma flame.

[Problem that the invention seeks to solve]

Therefore, the reaction time was short, the efficiency was poor, and a large amount of unreacted sample 1 was produced.

An object of the present invention is to provide a high-efficiency high-frequency plasma reactor that eliminates these drawbacks.

Summary: Structure of the Invention [Means for Solving Problems] The present invention uses a high-frequency magnetic field to generate a rotating laminar flow of gas around a plasma reactor that inductively generates high-frequency plasma. This is a high-frequency plasma reaction device characterized in that a reaction sample ejection part is inserted into a plasma flame, and the insertion depth can be adjusted.

[For production]

The sample ejection part extends into the plasma frame, injects the sample and gas into the plasma, and the outer periphery of the ejection part is surrounded by a rotating laminar flow of the same type of gas, which prevents scattering and explosion of the sample. By preventing long-term operation and increasing sample reaction time, high efficiency can be obtained.

〔Example〕

The figure shows a longitudinal cross-sectional view of the schematic structure of the present invention, however, the mechanism for adjusting the insertion depth of the ejection part is omitted. 6 In the figure, 1 is the reaction sample ejection part, which is surrounded by a double quartz tube 2. The inside of the quartz tube is cooled by water 3 flowing from the inlet 14 to the outlet 15. Moreover, in order to prevent the generated plasma flame 6 from coming into contact with the quartz tube wall, cooling gas is introduced from the injection lower as in the conventional manner, and a rotating laminar flow 8 is generated in the quartz tube 2.

However, conventionally, the tip of the ejection part 1 is flush with the upper surface 13 of the reaction part, but in the present invention, the ejection part 1 is inserted deeper than the upper surface 13. In order to prevent the sample from scattering, the outer periphery of the spouting part 1 is surrounded by a rotating laminar flow 10 of gas injected from the port 9. In order to cool the spouting part 1, water is flowed from the inlet 11 to the outlet 12. It's running double.

Now, a reaction sample is poured into the injection part 4 together with a gas such as argon, and a high-frequency current is passed through the high-frequency wire ring 5 on the outer periphery of the quartz tube 2 to ignite it with an appropriate trigger to generate plasma.
Give rise to frame 6.

At this time, the tip of the spout is inside the frame 6,
The sample is prevented from scattering by the rotating laminar flow 10 of the same kind of gas, and is injected directly into the plasma, so it falls through the plasma without being scattered on the inner surface of the quartz tube by the plasma airflow, resulting in a long reaction time and a good result. The results were obtained.

According to experiments, when an induced power of 50 KW was applied at a frequency of 4 MHz and the reaction was carried out using a quartz tube with an inner diameter of 60 mm, an efficient reaction was achieved. Note that better results can be obtained by slightly adjusting the insertion depth of the jetting part 1, so screwing or other adjusting means is provided, although not shown in the figure.

C. Effects of the Invention As described above, the present invention has a structure in which the reaction sample ejection part 1 is inserted into the plasma flame 6, and since both the gas and the sample are directly injected into the plasma, the reaction time is long. Moreover, since the outer periphery of the injection part was surrounded by the rotating laminar flow 10 of gas, there was no scattering of sample powder on the quartz tube wall, and a very efficient reaction was achieved.

[Brief explanation of the drawing]

The figure is a longitudinal sectional view showing an embodiment of the present invention. 1 is a reaction sample ejection part, 2 is a double quartz tube, 3 is water for cooling the quartz tube, 4 is a gas and reaction sample inlet, 5 is a high frequency coil, 6 is a plasma number frame, 7 is a cooling gas for the quartz tube wall Inlet, 8 is a rotating laminar flow caused by this, 9 is a gas inlet for cooling the ejection part of the reaction sample, 10 is a rotating laminar flow caused by this, 11-
14 is a cooling water inlet, 12 and 15 are water outlet ports, and 13 is the upper surface of the reaction section. (Voluntary) Procedural Amendment 2 2'Henny' November 2C, 1985 Director General of the Patent Office Kunio Ogawa 1, Indication of the case 1985 Patent Application No. 202277 2, Name of the invention Reaction sample spouting part High-frequency plasma reactor 3 inserted into a plasma flame; Relationship with the case of the person making the amendment Patent applicant name Nippon Koshuha Co., Ltd. 4, agent Kimura Building 5, 11-12 Yoyogi 2-chome, Shibuya-ku, Tokyo; Target of amendment The column of the specification “Claims” and “Detailed Description of the Invention”. 6. Contents of the amendment (2) The last line of page 2 to the first line of page 3 of the specification, ``and the depth can be adjusted'' will be deleted. 2. Scope of Claims (1) In a plasma reactor that inductively generates high-frequency plasma using a high-frequency magnetic field, a reaction sample jetting part that generates a rotating laminar flow of gas around it is placed in a plasma Φ frame. A high-frequency plasma reaction device characterized by an integrated circuit. t plasma r″nio kaya.

Claims (1)

[Claims] (1) In a plasma reactor that uses a high-frequency magnetic field to inductively generate high-frequency plasma, a reaction sample jetting part that generates a rotating laminar flow of gas around it is inserted into the plasma flame, and the insertion A high-frequency plasma reaction device characterized by adjustable depth.