JPS6358381B2 - - Google Patents
Info
- Publication number
- JPS6358381B2 JPS6358381B2 JP7704980A JP7704980A JPS6358381B2 JP S6358381 B2 JPS6358381 B2 JP S6358381B2 JP 7704980 A JP7704980 A JP 7704980A JP 7704980 A JP7704980 A JP 7704980A JP S6358381 B2 JPS6358381 B2 JP S6358381B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- semiconductor layer
- diode
- limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000015556 catabolic process Effects 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7704980A JPS572580A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7704980A JPS572580A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS572580A JPS572580A (en) | 1982-01-07 |
| JPS6358381B2 true JPS6358381B2 (tr) | 1988-11-15 |
Family
ID=13622917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7704980A Granted JPS572580A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572580A (tr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5398727B2 (ja) | 2008-10-06 | 2014-01-29 | 株式会社東芝 | 抵抗変化メモリ |
| CN107946349A (zh) * | 2016-10-12 | 2018-04-20 | 重庆中科渝芯电子有限公司 | 一种带有外延调制区的半导体装置及其制造方法 |
-
1980
- 1980-06-05 JP JP7704980A patent/JPS572580A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS572580A (en) | 1982-01-07 |
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