JPS6355526A - Liquid crystal display element - Google Patents
Liquid crystal display elementInfo
- Publication number
- JPS6355526A JPS6355526A JP19887386A JP19887386A JPS6355526A JP S6355526 A JPS6355526 A JP S6355526A JP 19887386 A JP19887386 A JP 19887386A JP 19887386 A JP19887386 A JP 19887386A JP S6355526 A JPS6355526 A JP S6355526A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- wiring
- films
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229920001721 polyimide Polymers 0.000 claims abstract description 18
- 239000009719 polyimide resin Substances 0.000 claims abstract description 4
- 210000002858 crystal cell Anatomy 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000000565 sealant Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示素子に係わり、特に液晶表示セルを
構成する基板の一方に液晶駆動用半導体チップを搭載し
た液晶表示素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal display element, and particularly to a liquid crystal display element in which a liquid crystal driving semiconductor chip is mounted on one of the substrates constituting a liquid crystal display cell.
従来、液晶表示セルを構成する一方の基板上に金属膜配
線をパターン状に形成し、この金属膜配線上に液晶駆動
用半導体チップ（以下ＬＳＩチップと称す）をブリップ
チップ法により直接接続した液晶表示素子は、第２図に
示すような構造よりなる。ガラスからなる上基板２およ
び下基板３の内面には、透明電極４が形成され、これら
上、下基板２，３間には液晶６がサンドイッチされ、そ
の周囲をシール剤７で封止して液晶セル１１を形成して
いる。下基板３上には、この下基板３の材質であるガラ
スと密着性の良いＮ ｉ Ｃｒ膜の一部が透明導電膜４
に接続するように形成され、その上に半田とぬれ性の良
いＣｕ１ｌを形成し、ホトエツチングにより配線パター
ニングを行なって２層構造の配線用電極８を形成する０
次にこの配線用電極８の表面および側面全体をカバーす
るように５ｉ０ｚ、ＳｉＮ、Ａｌ１ｚＯａなどの無機膜
からなる配線保護膜１５を蒸着などの方法により形成し
、その後、ＬＳＩチップ９を接続するための半田１６が
接続される部分にスルーホールを設ける（特開昭６０−
２２０３１７号公報）０次いで上、下基板２，３の透明
電極４が形成されている側に。Conventionally, a liquid crystal display in which a metal film wiring is formed in a pattern on one substrate constituting a liquid crystal display cell, and a liquid crystal driving semiconductor chip (hereinafter referred to as an LSI chip) is directly connected to the metal film wiring by the blip-chip method. The display element has a structure as shown in FIG. Transparent electrodes 4 are formed on the inner surfaces of the upper and lower substrates 2 and 3 made of glass, and a liquid crystal 6 is sandwiched between the upper and lower substrates 2 and 3, and the periphery thereof is sealed with a sealant 7. A liquid crystal cell 11 is formed. On the lower substrate 3, a part of the NiCr film, which has good adhesion to the glass that is the material of the lower substrate 3, forms a transparent conductive film 4.
A layer of Cu11 having good wettability with solder is formed on it, and wiring patterning is performed by photo-etching to form a wiring electrode 8 having a two-layer structure.
Next, a wiring protective film 15 made of an inorganic film such as 5i0z, SiN, Al1zOa, etc. is formed by a method such as vapor deposition so as to cover the entire surface and side surfaces of the wiring electrode 8, and then, for connecting the LSI chip 9. A through hole is provided in the part where the solder 16 is connected (Japanese Patent Application Laid-Open No. 1983-1999-
220317) 0 Next, on the sides of the upper and lower substrates 2 and 3 on which the transparent electrodes 4 are formed.
液晶分子配向膜１７を、ポリイミド系樹脂膜を塗布、加
熱処理により形成する０次にシール剤７を介して上基板
２を下基板３上に固定し、上基板２と下基板３間に液晶
６を封入して液晶セルを組立てる。その後半田１６を介
してＬＳＩチップ９を前記２層膜配Ｉａ８に半田接続す
る。配線保護膜１５は半田１６が前記Ｃｕ膜中をぬれ広
がるのを防ぐ半田ダムとしての機能も有し、半田接続形
状を一定にする０次に半田接続されたＬＳＩチップ９を
保護するために、通常半導体素子のパッケージとして用
いられている樹脂コート２０を形成する。The liquid crystal molecule alignment film 17 is formed by coating a polyimide resin film and heating it. Next, the upper substrate 2 is fixed on the lower substrate 3 via a sealant 7, and the liquid crystal is placed between the upper substrate 2 and the lower substrate 3. 6 to assemble the liquid crystal cell. After that, the LSI chip 9 is soldered to the two-layer film interconnection Ia8 via the solder 16. The wiring protection film 15 also has the function of a solder dam to prevent the solder 16 from spreading through the Cu film, and in order to protect the LSI chip 9 connected by zero-order solder to keep the solder connection shape constant, A resin coat 20, which is usually used as a package for semiconductor devices, is formed.
上記従来例では、配線保護膜１５および液晶分子配向膜
１７を別個に独立して形成する為、製造工程が複雑にな
り、工程時間が増大するという問題があった。In the conventional example described above, since the wiring protection film 15 and the liquid crystal molecule alignment film 17 are formed separately and independently, there is a problem that the manufacturing process becomes complicated and the process time increases.
本発明は、製造工程を簡単にし、かつ製造工程時間を大
幅に短縮できる液晶表示素子を提供することを目的とす
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display element that can simplify the manufacturing process and significantly shorten the manufacturing process time.
上記問題点は、配線保護膜と液晶分子配向膜とに、とも
に感光性ポリイミドを用いることにより解決される。The above problem can be solved by using photosensitive polyimide for both the wiring protection film and the liquid crystal molecule alignment film.
配線保護膜および液晶分子配向膜に感光性ポリイミドを
使用することにより、双方の膜を一度の塗布工程により
塗布可能となり、かつ感光性ポリイミドを使用している
ため配線保護膜は所望の形状にエツチング加工すること
が容易に行える。By using photosensitive polyimide for the wiring protection film and the liquid crystal molecule alignment film, both films can be applied in one coating process, and since photosensitive polyimide is used, the wiring protection film can be etched into the desired shape. Easy to process.
以下図面を参照して、この発明の一実施例について説明
する。An embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明による液晶表示素子の一実施例の断面
図であり、第２図におけると同じまたは相当部分には同
一番号を付しである。FIG. 1 is a sectional view of one embodiment of a liquid crystal display element according to the present invention, and the same or corresponding parts as in FIG. 2 are given the same numbers.
先ず、ガラスからなる上基板２および下基板３の表面に
酸化インジウムなどを用いて１表示パターンの形状にそ
れぞれ透明電極４を形成する１次Ｃｒ膜、半田とのぬれ
性の良いＣｕ膜、さらにＣｕの酸化防止および半田のぬ
れ防止のためのＣｒ膜を重ねて蒸着することにより、多
層金属薄膜を形成する０次いで後の工程でＬＳＩチップ
９が搭載される下基板３上の位置と透明電極４との間を
電気的に接続する配線のパターン状に前記多層金属薄膜
をエツチングし、金属薄膜配線８を形成する。First, on the surfaces of the upper substrate 2 and lower substrate 3 made of glass, a primary Cr film is formed using indium oxide or the like to form a transparent electrode 4 in the shape of one display pattern, a Cu film having good wettability with solder, and a Cu film having good wettability with solder. A multilayer metal thin film is formed by depositing Cr films to prevent Cu oxidation and solder wetting.Then, the position on the lower substrate 3 on which the LSI chip 9 will be mounted in a later process and the transparent electrode The multilayer metal thin film is etched in the shape of a wiring pattern for electrically connecting between the metal thin film wiring 8 and the metal thin film wiring 8.
次に感光性ポリイミド系樹脂（例えば、日立化成製ＰＬ
−１０００又は東し製フォトニスＵＲ３１００若しくは
３６００）を上、下基板２，３上にポリイミド膜５とし
て形成する。Next, photosensitive polyimide resin (for example, Hitachi Chemical PL
-1000 or Photonis UR3100 or 3600 manufactured by Toshi Co., Ltd.) is formed as a polyimide film 5 on the upper and lower substrates 2 and 3.
次に下基板３については、ＬＳＩチップ９を搭載すべき
位置およびＬＳＩチップ９と金属薄膜配線８とをワイヤ
１０を介して電気的に接続を行う位置を、感光性を利用
し露光後エツチングすることによりスルーホールを設け
る０次に上基板２と下基板３とが対向する内面側をラビ
ング処理して液晶分子を配向する性質を付与する。Next, for the lower substrate 3, the position where the LSI chip 9 is to be mounted and the position where the LSI chip 9 and the metal thin film wiring 8 are to be electrically connected via the wires 10 are etched after exposure using photosensitivity. As a result, through-holes are provided and the opposing inner surfaces of the upper substrate 2 and the lower substrate 3 are subjected to rubbing treatment to provide a property of aligning liquid crystal molecules.
透明電極４の周辺に沿って、かつ液晶６注入のための注
入口（図示せず）を残して、シール剤７としてエポキシ
樹脂を塗布した後、上基板２と下基板３とを透明電極４
同志が５〜１０μの間隔を有して対向する様装置して前
記エポキシ樹脂７を１８０℃で硬化し、液晶セル１を形
成する。After applying epoxy resin as a sealant 7 along the periphery of the transparent electrode 4 and leaving an injection port (not shown) for injecting the liquid crystal 6, the upper substrate 2 and the lower substrate 3 are bonded to the transparent electrode 4.
The epoxy resin 7 is cured at 180 DEG C. to form a liquid crystal cell 1 in such a manner that the epoxy resin 7 faces each other with an interval of 5 to 10 .mu.m.
次に液晶６を前記注入口を介して液晶セル１内に注入し
、注入口を接着剤で封止する。Next, liquid crystal 6 is injected into the liquid crystal cell 1 through the injection port, and the injection port is sealed with an adhesive.
次にＬＳＩチップ９を、下基板３上の所定位置に固定後
、ワイヤ１０でＬＳＩチップ９と配線用電極８を電気的
に接続する。配線用電極８．ＬＳＩチップ９およびワイ
ヤ１０を樹脂コート２０で被覆する。Next, after fixing the LSI chip 9 to a predetermined position on the lower substrate 3, the LSI chip 9 and the wiring electrodes 8 are electrically connected with wires 10. Wiring electrode 8. The LSI chip 9 and wires 10 are coated with a resin coat 20.
なお、ＬＳＩチップ９と配線用電極８の接続はフェイス
ダウンボンディング又はＴＡＢ等にｉる接続でもかまわ
ない、ポリイミド膜５は配線電極保護のため数μｍの厚
さが必要である。Note that the connection between the LSI chip 9 and the wiring electrode 8 may be by face-down bonding or TAB connection, and the polyimide film 5 needs to have a thickness of several μm to protect the wiring electrode.
本実施例によれば、配線電極保護膜と配向膜を同時に形
成でき、かつポリイミド膜５は数μｍと厚いため透明電
極４間に異物が付着してショートするのを防止する絶縁
膜も兼ねることが可能である。液晶分子配向膜と配線電
極保護膜を同時に形成出来るので製作工数を大幅に減ら
すことができる効果がある。According to this embodiment, the wiring electrode protective film and the alignment film can be formed at the same time, and since the polyimide film 5 is as thick as several micrometers, it also serves as an insulating film to prevent foreign matter from adhering between the transparent electrodes 4 and causing a short circuit. is possible. Since the liquid crystal molecule alignment film and the wiring electrode protective film can be formed at the same time, the number of manufacturing steps can be significantly reduced.
なお、感光性ポリイミドとしては、上記以外に光感応性
マレイミドプレポリマー等からなる光硬化性樹脂組成物
（特開昭５８−１３６３０号公轢）。In addition, examples of the photosensitive polyimide include photocurable resin compositions (Japanese Patent Laid-Open Publication No. 13630/1983) comprising photosensitive maleimide prepolymers and the like in addition to those mentioned above.
光開始剤等を含む放射線感受性ポリイミド前躯体組成物
（特開昭５８−１２０６３６号公報）、光感応基をもつ
ポリアミド酸の感光性ポリイミド前躯体（特開昭５９−
１０８０３１号公報）等が有効である。A radiation-sensitive polyimide precursor composition containing a photoinitiator etc. (JP-A-58-120636), a photosensitive polyimide precursor of polyamic acid having a photosensitive group (JP-A-59-1998)
108031) etc. are effective.
本発明によれば、配線電極保護膜、液晶分子配向膜、絶
縁膜の形成が同時にできるので、製作工程を単純化し、
かつ製作工程を短縮化出来る。According to the present invention, the wiring electrode protective film, the liquid crystal molecule alignment film, and the insulating film can be formed at the same time, which simplifies the manufacturing process.
Moreover, the manufacturing process can be shortened.
第１図は、本発明になる液晶表示素子の一実施例を示す
概略断面図、第２図は従来の液晶表示素子の概略断面図
である。
１・・・液晶セル、２・・・上基板、３・・・下基板、
４・・・透明電極、５・・・ポリイミド膜、６・・・液
晶、８・・・配線用電極、９・・・ＬＳＩチップ、１０
・・・ワイヤ。
代理人 弁理士 小 川 勝 男 −′＼・６パ１
１・・・液晶セル
２・・・上基板
３・・・下基板
４・・・透明電極
５・・・メリイミド膜
６・・・液晶
７・・・シール剤
１０・・・ワイヤ
２０・・・９！脂コート
２・・・下基板
３・・・下基板
４・・・透明１！橿
６・・・液晶
７・・・シール剤
８・・・配線用電極
９・・・ＬＳＩチップ
１１・・・液晶セル
１５・・・配線保護膜
１６・・・半田
１７・・・液晶分子配向膜
２０・−！！脂コートFIG. 1 is a schematic sectional view showing an embodiment of a liquid crystal display element according to the present invention, and FIG. 2 is a schematic sectional view of a conventional liquid crystal display element. 1...Liquid crystal cell, 2...Upper substrate, 3...Lower substrate,
4... Transparent electrode, 5... Polyimide film, 6... Liquid crystal, 8... Wiring electrode, 9... LSI chip, 10
...Wire. Agent Patent Attorney Katsuo Ogawa -'\・6Pa1 1...Liquid crystal cell 2...Upper substrate 3...Lower substrate 4...Transparent electrode 5...Meliimide film 6...Liquid crystal 7...Sealant 10...Wire 20...9! Grease coat 2...lower substrate 3...lower substrate 4...transparent 1! Brush 6...Liquid crystal 7...Sealant 8...Wiring electrode 9...LSI chip 11...Liquid crystal cell 15...Wiring protective film 16...Solder 17...Liquid crystal molecule alignment Membrane 20・-! ! fat coat
Claims (1)
導体チップを搭載した液晶表示素子において、液晶セル
の透明電極と液晶セル駆動用半導体チップとを電気的に
接続するために基板上に形成された金属薄膜配線を保護
する配線保護膜と、液晶セル内に形成される液晶分子配
向膜とを感光性ポリイミド樹脂で形成したことを特徴と
する液晶表示素子。1. In a liquid crystal display element in which a semiconductor chip for driving the liquid crystal cell is mounted on one of the substrates constituting the liquid crystal cell, a liquid crystal cell is formed on the substrate to electrically connect the transparent electrode of the liquid crystal cell and the semiconductor chip for driving the liquid crystal cell. 1. A liquid crystal display element, characterized in that a wiring protection film for protecting thin metal film wiring and a liquid crystal molecule alignment film formed in a liquid crystal cell are formed of photosensitive polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19887386A JPS6355526A (en) | 1986-08-27 | 1986-08-27 | Liquid crystal display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19887386A JPS6355526A (en) | 1986-08-27 | 1986-08-27 | Liquid crystal display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6355526A true JPS6355526A (en) | 1988-03-10 |
Family
ID=16398338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19887386A Pending JPS6355526A (en) | 1986-08-27 | 1986-08-27 | Liquid crystal display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355526A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0337775A3 (en) * | 1988-04-12 | 1990-09-19 | Sharp Kabushiki Kaisha | Electronic apparatus |
| EP0500117A2 (en) * | 1991-02-22 | 1992-08-26 | Nec Corporation | Liquid crystal display device |
| JP2002258768A (en) * | 2001-03-02 | 2002-09-11 | Seiko Epson Corp | Electrooptical device, its manufacturing method, and electronic apparatus |
-
1986
- 1986-08-27 JP JP19887386A patent/JPS6355526A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0337775A3 (en) * | 1988-04-12 | 1990-09-19 | Sharp Kabushiki Kaisha | Electronic apparatus |
| US5016986A (en) * | 1988-04-12 | 1991-05-21 | Sharp Kabushiki Kaisha | Display device having an improvement in insulating between conductors connected to electronic components |
| EP0500117A2 (en) * | 1991-02-22 | 1992-08-26 | Nec Corporation | Liquid crystal display device |
| EP0500117A3 (en) * | 1991-02-22 | 1993-03-10 | Nec Corporation | Liquid crystal display device |
| US5287208A (en) * | 1991-02-22 | 1994-02-15 | Nec Corporation | Liquid crystal device with benzocyclobutene alignment layer and protective coating for electrodes |
| JP2002258768A (en) * | 2001-03-02 | 2002-09-11 | Seiko Epson Corp | Electrooptical device, its manufacturing method, and electronic apparatus |
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