JPS6355187A - Aluminum nitride sintered body with metallized surface - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an aluminum nitride sintered body, and more specifically, an aluminum nitride sintered body having a metallized surface with reliable and practical bonding strength. It is related to.

2. Description of the Related Art Semiconductor devices and devices and equipment using them generally include various active and passive elements, but these have the problem of heat generation. Therefore, in order to operate these elements stably and reliably, it is necessary to perform the best thermal design during mounting, which is extremely important in the design and manufacture of semiconductor devices and the like.

Furthermore, in recent years, there has been a major trend toward faster operation and higher integration of semiconductor devices, and in particular, there has been a remarkable increase in the integration density of LSIs and the like. For this reason, importance has been placed on the heat dissipation properties of substrate materials.

On the other hand, alumina has traditionally been used as ceramics for IC substrates, but the thermal conductivity of conventional alumina sintered bodies is insufficient for heat dissipation, and it is becoming impossible to adequately cope with the increase in heat generation of IC chips. . Therefore, as an alternative to such alumina substrates, substrates or heat sinks using aluminum nitride, which has high thermal conductivity, have attracted attention, and many studies have been conducted to put them into practical use.

Aluminum nitride inherently has high thermal conductivity and high insulation properties, and unlike beryllia, it is non-toxic, so it is viewed as a promising material in the semiconductor industry, especially as an insulating material or a packaging material.

Since aluminum nitride (AIN) sintered bodies have high thermal conductivity, they are attracting attention as substrates for integrated circuits (ICs), heat sinks, etc. as described above. However, while having such interesting properties,
Sintered bodies have problems in bonding strength with metals, glass, etc. By the way, this sintered body can be coated with a metallized layer by using a thick film method in which a commercially available metallizing paste is directly applied to the surface of the sintered body, or a thin film method in which a thin film of active metal or metal is formed by vapor deposition or other methods. It is generally used in the state where it is attached. However, it is not possible to obtain a bonding strength sufficient for practical use by such methods, and in reality, the surface is modified by some method before or during the metallization operation, and other methods such as metals, etc. It is necessary to improve bondability with

As a conventional method for surface modification of such an AIN sintered body, a method is known in which the surface of the AIN sintered body is subjected to oxidation treatment or the like to form an oxide layer. That is, for example, AIN
8102, Al2O3, mullite, Fe2 on the surface of the sintered body
This is a method of forming an oxide layer such as O3 or CIJ. However, although the oxide layer as exemplified above has good affinity with the glass layer, alumina layer, etc. and forms a strong bond, it has low affinity with the AIN sintered body itself.
There seems to be a problem with reliability.

Problems to be Solved by the Invention As stated above, AIN sintered material has extremely good electrical insulation and thermal conductivity, and is therefore expected to be used as an IC insulating substrate or heat sink material that requires good heat dissipation. The body is often used with its surface metallized, but there have been problems in terms of bonding strength to these metals. Therefore, various methods such as those described above have been considered, but all of them are insufficient, and an AIN sintered body having a metallized surface sufficient for practical use has not yet been obtained.

That is, the conventional thick film method of coating an AIN sintered body with a metallized paste (for example, a commercially available frit or chemical bond type) has not been able to provide good bonding strength. This is because the conductive paste is originally for Al2O3 and does not have good reactivity with the AIN layer.

Furthermore, oxide treatment of the surface of an AIN sintered body is known, in which a method is known in which metallization is performed while or after the oxide layer is formed. However, the above 5iO7,
Oxide layers such as Al2O3, mullite, Fe2O3, CuO, etc. have poor reactivity with AIN. Moreover, even if a reaction layer is formed, since the reaction layer is essentially similar to an oxide layer, the reactivity with the AIN surface will hardly be improved, and therefore the bonding strength with the AIN sintered body will not be improved. is not improved either.

Furthermore, this oxide treatment has problems in terms of density and film bonding strength.

That is, the oxide treatment of the AIN surface is expressed, for example, by the following formula: 2AIN+□02→ Al2O3+N2 ↑Nitrogen gas may be generated as a result of this reaction, and the resulting oxide film is extremely porous. It becomes a membrane.

Further, it is difficult to expect sufficient bonding strength even by thick film methods or thin film methods using active metals.

That is, even when active metals that are highly reactive with nitrides are used, AIN is extremely chemically stable, so there is no sufficient bonding strength between them, making bonding difficult. This seems to be due to the following.

As described above, all attempts to achieve a bond strength sufficient for practical use between the AIN sintered body and the metallized layer have not been satisfactory. Therefore, by setting a structure that has affinity for both the metal layer or metal oxide, etc. and the AIN sintered body, the bond between them is guaranteed, and the metallized layer and A
There is a strong desire to develop a new technique that can improve the bonding strength of IN sintered bodies.

Therefore, an object of the present invention is to improve the bonding strength between a metallized layer having excellent insulation properties and heat dissipation properties and an AIN sintered body. That is, the object of the present invention is to provide an AIN sintered body having excellent bonding strength and a highly reliable metallized surface.

Means for Solving the Problems The present inventors have developed an aluminum nitride sintered body having a metallized surface for the purpose described above, in view of the above-mentioned current state of research on the practical application of aluminum nitride sintered bodies as IC substrates, etc. As a result of various studies and studies, we realized a highly concentrated layer of sintering aid for the aluminum nitride sintered body on the surface of the aluminum nitride sintered body substrate to be metallized, and through this layer, the metallized surface The present invention was based on the discovery that it is advantageous to form the following.

That is, the aluminum nitride sintered body having a metallized surface of the present invention comprises an aluminum nitride sintered body substrate and an oxide of a group IIIa element of the periodic table of elements provided thereon or a mixture thereof. It is composed of a high concentration layer of a sintering aid for aluminum (hereinafter also referred to as a high concentration sintering aid layer) and a metal layer provided on the sintered body substrate via the high concentration layer. This is a characteristic feature.

In the AIN sintered body having a metallized layer of the present invention, it is important that the aluminum nitride sintered body substrate has good thermal conductivity and does not contain defects such as a large number of pores and impurities. .

Aluminum nitride (AIN
In the sintered body, yttrium (
Y), cerium (Ce), cadrinium (Gd), europium (Eu), samarium (Sm), holonium (
Preferred examples include HO) and ytterbium (Yb). Moreover, it is preferable that the thickness of this high concentration auxiliary agent layer is within the range of 1 to 100 μm.

In order to form a highly concentrated sintering aid layer on the surface of this AIN sintered body, the following various methods can be employed. First, for example, cerium oxide as a sintering aid is added to aluminum nitride powder in an amount of 5 to 1Qwt% and an organic binder, and then kneaded to produce a green sheet having a thickness of 1 to 1Qmm.

After forming this sheet into an appropriate size, the binder is removed, and then the sheet is heated in nitrogen at 1700 to 2200°C for 30 to 12 hours.
Bake for 0 minutes. During firing, the sintering aid cerium oxide reacts with the aluminum nitride powder at 1600° C. or higher to form a melt, which promotes sintering. However, while the sample is not fully sintered, it is porous and the auxiliary components diffuse through the capillaries to the surface and sintering is complete.

In this way, most of the auxiliary agent contained at 5 wt% is diffused to the surface, so the concentration of the auxiliary agent in the sintered body decreases greatly, and the auxiliary agent is auxiliary at a depth of 1 to 100 μm from the surface. The concentration of the agent has increased significantly. The auxiliary component of this diffusion layer is increased to about 20 to 5 Qwt%. Therefore, the amount of the auxiliary component in the diffusion layer is greatly influenced by the thickness of the green sheet and the sintering conditions, in addition to the amount of the sintering auxiliary agent added during production of the green sheet. In addition to cerium oxide, any sintering aid for aluminum nitride can be used as the sintering aid.

A predetermined metallization surface is provided on the thus formed high concentration layer of sintering aid. The method of forming the metallized surface, the material used, etc. do not need to be particularly special, and any of the various conventionally known methods and materials can be used. For example, the metallized surface is Au, Ag5Pt,
When formed from Pd and a mixture thereof,
For example, Au, Au-Pt, Pt, Ag, Ag-P
It can be formed according to a thick film paste method in which a paste such as d is coated by a screen printing method and then baked at a temperature in the range of about 850-940° C. in air, oxygen atmosphere or nitrogen atmosphere. Similarly, the material for metallization is MOlMo! Au5C
The thick film paste method can also be used when the material is U or W. However, the above-mentioned materials are merely examples and do not limit the present invention in any way, and the same applies to the following description.

Further, the metallized surface of the AIN sintered body of the present invention can be realized using various known thin film forming methods, preferably physical vapor deposition methods such as vacuum evaporation method, sputtering method, ion blating method, etc. This method is particularly advantageous when forming a metallized surface of a laminated structure of two or more layers.
i), zirconium (2r) or hafnium (Hf)
) / (MO or pt) / (Ni or Au),
For example, Ti/Mo/Ni, Ti/! Jo/AuXTi/
Pt/Au52r/Mo/Ni5Zr/Mo/Au52
It can be realized with a three-layer structure such as r/Pt/Au.

Among the physical vapor deposition methods, the ion blating method is particularly
It is preferable because it has excellent adhesion of the deposited film, and it is advantageous to use active metals such as the above-mentioned Group Ⅰa elements as the bottom layer, that is, the layer in contact with the high-concentration sintering aid layer. Since it has a high chemical affinity with oxygen or the Ja group elements of the Periodic Table of Elements, it is expected to form a strong bond with the high concentration layer of the sintering aid for the AIN sintered body substrate.

Function AIN inherently has a very poor affinity with glass or metal, so despite having excellent thermal conductivity (heat dissipation properties) and electrical insulation, it is still far from being put to practical use. Ta. In other words, in order to make the AIN sintered body applicable as a material for IC substrates, heat sinks, etc., it is necessary to improve the affinity and wettability of the AIN sintered body with metals, etc., and to achieve high adhesion strength between them. must be secured.

As a solution to this problem, a method has been known in which, as mentioned above, the AIN sintered substrate is surface treated with an oxide or the like before being metallized, but even with such treatment,
Due to the incompatibility between the layer obtained as a result of such treatment and the AIN, it is not possible to achieve a sufficient adhesion strength for practical use, and surface treatment of the AIN sintered body requires a process. This makes the resulting product more complex and more expensive.

The various drawbacks observed in the production of conventional AIN sintered bodies having metallized surfaces as described above can be solved by using a highly concentrated sintering agent layer obtained as a result of diffusion of a sintering aid onto the surface to be metallized. Most of the problems can be solved by using an AIN sintered body with

Generally, the sintering aid should be selected from compounds that have a high chemical affinity for the material to be sintered;
It is expected that there is no inconsistency between the high concentration layer of the sintering aid and the AIN layer, and therefore the high concentration layer and the AIN sintered body are considered to be almost "one body". That is, it is considered that the auxiliary component sufficiently wets the AIN particles and forms a good grain boundary structure. Therefore, the mechanical strength equivalent to that of the AIN sintered body is observed in the region mainly composed of this grain boundary structure layer, that is, the high concentration sintering aid layer, and there is almost no inconsistency between them. I can't help but think about it. Moreover, since the auxiliary agent is an oxide of a group 1 (a) element, it has extremely good wettability with the glass component or metal contained in the thick film paste, and therefore can be firmly bonded to the metallized surface.

That is, for example, the metallized surface is Au, Ag5Pt system, Mo,
iA.

- In the case of Mn, Cu, or W, after applying these pastes, by firing under appropriate conditions, the glass or metal components contained in the paste will precipitate on the surface of the AIN sintered body. The wettability of the sintered body surface is improved by reacting with the sintering aid component, or through this aid component, and the metallized surface and the AIN sintered body are bonded with high strength. Conceivable.

In addition, the metallized surface is group ■a element/) 40 or Pt/A
In the case of a three-layer structure of u or N1, the innermost layer, that is, the activated metal layer as a layer in contact with the AIN sintered body substrate directly or through a high-concentration sintering aid layer has the above-mentioned high-concentration sintering aid layer. It is thought that high bonding strength is ensured by strongly bonding with the auxiliary component of the concentration layer.

In any of the above cases, the Group IVa element constituting the sintering aid and the oxygen bonded thereto are connected to the metallized material and A1. It is clear that it greatly contributes to the strong bonding with the N sintered body. As described above, it is extremely important that a highly concentrated sintering aid layer exists on the metallized side surface of the AIN sintered body, and its thickness is also a critical condition.

In other words, the minimum thickness of the highly concentrated layer required to achieve a strong bond is approximately 1 μm, while if the thickness of the highly concentrated layer exceeds approximately 100 μm, the presence of the highly concentrated layer Another problem may arise in that the high thermal conductivity, which is a characteristic of the AIN sintered body, is reduced. Therefore,
In the present invention, the thickness of the high concentration layer is 1 to 100 μm as described above.
By limiting the value to within the range of m, it is possible to ensure high bonding strength between the metallized surface and the A1 sintered body without impairing the characteristics specific to the AIN sintered body.

Thus, the AIN sintered body having a metallized surface with improved bonding strength according to the present invention can be used not only as the above-mentioned IC substrates, such as high voltage ICs (HICs), heat sinks, etc., but also as a bond between metal and AIN sintered body. It can be used advantageously in any field where composite materials are required, and AIN
It is possible to fully exploit the interesting properties of the material, namely high thermal conductivity, high electrical insulation, and high mechanical strength.

EXAMPLES Hereinafter, the AIN sintered body having a metallized surface of the present invention will be explained in more detail using examples, and the advantages thereof will be clarified. Further, the manufacturing method will be specifically explained using manufacturing examples. However, the scope of the invention is not limited in any way by the following examples.

Example 1 The attached FIG. 1 schematically shows the structure of a HEIN sintered body having a metallized surface according to the present invention, and as is clear from the figure,
It is composed of an AIN sintered body 1, a metallized surface 2, and a high concentration layer 3 of an AIN sintered body sintering aid interposed between these.

Here, the metallized surface 2 can be of various types, as shown in the production examples below, and its thickness can be within the usual range for products of this type known in the art.

Production Example 1 5w of Y2O3, CaC2 and GdzO3 as auxiliaries
It has a diffusion layer (high concentration layer) doped with t%. AU, Au-pt, and Ag-Pd pastes were applied to the AIN sintered body to a thickness of about 25 to 30 μm, and then heated at 85 μm in the air.
Baking was performed at 0 to 940°C for 10 minutes to form an AIN sintered body having a metallized surface. Thus, an annealed copper wire with a diameter of 0.8 mm was soldered onto a metal surface of i, etc., and the tensile strength was determined and summarized in the table below. A sintered body with uniformly dispersed auxiliary agent (5 wt%) without a diffusion layer on the surface was also metalized in the same way, and the tensile strength of this was also measured in the same manner as above, and this was also included as a comparative example. Shown in the table.

Production Example 2 Three types of AIN sintered bodies each having a diffusion layer to which 5 wt% of Y2O3, CaC2 and Gd2O3 were added as auxiliaries were added W,! Ito, Mo! An paste with a thickness of 2
It was applied to a thickness of about 8 to 34 μm, and heated in a slightly reducing snow environment at 1450 to 1740 °C for the former and 1310 to 1520 °C for the latter three.
Baking was performed at ℃ for 30 minutes to form an IN sintered body having a metal surface. After 81 platings on the thus obtained metal surface, 0
．． Annealed copper wires of 8 mmφ were soldered to determine the tensile strength, and the results are summarized in the table below.

In addition, a sintered body in which the auxiliary agent (5 wt%) was uniformly dispersed without a diffusion layer on the surface was similarly metalized, and
The tensile strengths of these samples were also determined in the same manner and are also shown in the table as comparative examples.

Production Example 3 Y203, CeO□ and Gd2O as auxiliary agents
A Cu paste is applied to a thickness of about 10 to 15 μm on an AIN sintered body having a diffusion layer doped with wt%, and baked at 950 to 1050°C for 10 minutes in a non-oxidizing atmosphere to form an AIN sintered body with a metallized surface. Formed a body. An annealed copper wire of 0.8+nll1φ was soldered onto this metallized surface to determine the tensile strength, which is summarized in the table below. In addition, a sintered body with uniformly dispersed auxiliary agent (5 wt%) without a diffusion layer on the surface and metallized in the same manner was prepared as a comparative example, and the tensile strength of these comparative examples was determined in the same manner as above. are also shown in the table.

Production Example 4 Ti/Mo/N'1ST was applied to three types of AIN sintered bodies with diffusion layers to which 5 wt% of Y2O3, CeO2, and GdzOs were added as auxiliary agents, respectively, by an ion-blating method.
i/M.

/Au, Ti /Pt /Ni, Ti /Pt/Au
52r/Mo/Ni, Zr/Mo/Au, Zr/P
t/Ni, Zr/Pt/Au, Hf/Mo/
Ni.

Hf /Mo/Au5Hf /Pt/Ni5Hf /P
t/Au was laminated in a three-layer structure. The film thicknesses of T1, Zr, and Hf are O.4 to 0.5 μm.

The film thickness of MOLPT was 0.3 to 0.5 μm, and the film thickness of 5NiSAu was 2.0 to 2.5 μm. 0 on this metal surface.
Annealed copper wires of 8 mmφ were soldered to determine the tensile strength, and the results were summarized as follows. Incidentally, a sintered body having no diffusion layer on the surface and in which the auxiliary agent (5 wt%) was uniformly dispersed was similarly metalized and produced as a comparative example, and the tensile strength was determined in the same manner as above for these comparative rows. The results are also shown in the table.

(i) AIN (Y2O,:5wt%)a, thickness of diffusion layer (μm) 1 Metallized film Ti /Mo/Ni Ti /
Mo/Au tensile strength (Kg/mm2) 8.9
9.6 () Comparative examples (1, 3)
(1,5) Ti/Pt/Ni Ti/Pt/Au
Zr/! , to/Ni 2r/Mo/Au9.4
9.2 7.7 7.9 (1,2)
(1,1) (1,2) (1
,1) Zr/Pt/Ni 2r/Pt/Au Hf
/! , lo/Ni)If/Mo/Au7.27.3
6.3 5.9(1,4) (
1,0) (1,1) (1,2)H
f/Pt/Ni Hf/Pt/Au6.4 6
．． 2 (1,1) (1,4) b, Thickness of diffusion layer (μm) 10 Metallized film Ti /Mo/Ni Ti /I
Ao/Au tensile strength (Kg/m+y+2) 8.
8 9.4 () is a comparative example (1,1)
(1,0)Ti/Pt/Ni Ti/Pt/Au
Zr/Mo/Ni Zr/! , lo/Au9.2
9.0? , 9 7.6 (1,4)
(],,3) (1,0) (1
,2) Zr/Pt/Ni Zr/Pt/Au Hf
/Mo/Ni tlf/Mo/Au7.1 7
．． 1 6.2 6.0 (1,2)
(1,1) (1,2) (1,1)H
f/Pt/Ni Hf/Pt/Au6.2 6
．． 1 (1,1) '(1,2) Thickness of C4 diffusion layer (μm) 35 Metallized film Ti/Mo/Ni Ti/Mo
/Au tensile strength (Kg/mm”) 8.3
8.6 () is a comparative example (1,1)(1,2)Ti
/Pt/Ni Ti/Pt/Au Zr/Mo/N
i Zr/! ,lo/,Aug,4 8.2
7.4 7.4(1,1) (1
,3) (0,9) (1,1)Zr
/Pt/Ni Zr/Pt/Au Hf/Mo/N
i Hf/Mo/Au7, 1 7.2,
6.1 6.0 (1,0) (1,2
) (0,9) (1,0)Hf/P
t/Ni Hf/Pt/Au5.9 6.0 (0,9) (1,1) (ii) AIN (CeO2: 5wt%)a, thickness of diffusion layer (μm) 1 Metallized film Ti/Mo/Ni Ti/Mo
/^(Tensile strength (Kg/mm2) 9.4
9.3 () is a comparative example (1,1) (1
,4)Ti/Pt/NiTi/Pt/Au
2r/Mo/Ni 2r/1. to/Au9.1
9.2 8.1 8.0
(1,1) (1,2) (1,
0) (1,2)Zr/Pt/Ni 2
r/Pt/Au tlf/Mo/Ni Hf/
Mo/Au8.2 8.1 6.
4 6.2 (1, 3) (1, 1
) (1,2) (1,3)Hf
/Pt/Ni Hf/Pt/Au6.3
6.0 (1,2) (1,3) b, Thickness of diffusion layer (μm) 10 Metallized film Ti/Mo/Ni Ti/Mo/
Au tensile strength (Kg/mm2) 9.1 9
．． 2 () is a comparative example (0,9) (1,2)T
i/Pt/Ni Ti/Pt/Au Zr/Mo/
Ni 2r/! , to/Au9.4 9:2
8.4 8.3(1,1>(1,
3> (1,0) (1,1)2r/
Pt/Ni 2r/Pt/Au Hf/! ,to/
NiHf/Mo/Au7.0 8.1
6.0 6.2 (1,2) (1,3)
(1,1) (1,2)Hf/Pt
/Ni Hf/Pt/Au6.2 6.1 (1,1) (1,3) Thickness of C1 diffusion layer (μm) 35 Metallized film Ti/Mo/Ni Ti/Mo
/Au tensile strength (Kg/mm') 9.0
9.2 () is a comparative example (1,0) (0,
9) Ti/Pt/Ni Ti/Pt/Au Zr/
Mo/Ni 2r/Mo/Au9.1 8.9
8.08.2 (1,1) (1,2)
(1,2) (1,0)2r/Pt
/Ni Zr/Pt/Au Hf/Mo/Ni
Hf/Mo/Au7.9 8.16.2
6.4 (0,9) (1,1) (0
,9) (1,1)Hf/Pt/NiHf
/Pt/Au6.0 6.1 (0,8) (1,2) (iii) AIN (Gd203: 5wt%)a,
Thickness of diffusion layer (μm) 1 Metallized film Ti /Mo /Ni Ti
/) Ao /Au tensile strength (Kg/mm2) 9
．． 7 9.6 () is a comparative example (1,1)
(1,2) Ti/Pt/Ni Ti/Pt/Au
2r/Mo/Ni 2r/Mo/Au9.4
9.5 8.5 8.3 (0,9)
(1,0) (1,1) (
1,0) Zr/Pt/Ni Zr/Pt/Au H
f/Mo/Ni Hf/Mo/Au8.5 8
．． 1? , 2 7.1 (1, 2)
(0,9) (0,9) (1,
1) Hf/Pt/Ni Hf/Mo/Au7.2
7.4 (1,0) (0,9) b, Thickness of diffusion layer (μm) 10.

Metallized film Ti/! , lo/Ni Ti/
Mo/Au tensile strength (Kg/mm2) 9.8
9.6 () is a comparative example (0,9) (1,2)
Ti/Pt/Ni Ti/Pt/Au Zr/Mo
/Ni Zr/Pt/Au9.6 9.7
8.6 8.4(1,0) (0,
9) (1,1) (1,1)Zr/
Pt/Ni Zr/Pt/Au Hf/Mo/Ni
Hf/Mo/Au8.5 8.2 7
,3 7.1(1,2) (1,0)
(1,0) (1,0)Hf/Pt/
Ni Hf/Pt/Au7.3 7.2 (0,9) (0,9) Thickness of C0 diffusion layer (μm) 35 Metallized film Ti /Mo /Ni Ti
/Mo /Au tensile strength (Kg/mm2) 9.
4 9.5 () is a comparative example (1,0)
(1,2) Ti/Pt/Ni Ti/Pt/Au
Zr/Mo/Ni 2r/Mo/Au9.2
9.4 8.3 8.4 (1,2)
(1,1) (0,9) (1
,0)2r/Pt/Ni Zr/Pt/Au Hf
/Mo/Ni Hf/Mo/Au8.6 8.
3 7.1 7.0 (1,0)
(1,1) (1,2) (1,1)
Hf/Pt/Ni Hf/Pt/Au7.2
7.3 (0,9) (0,8) Effects of the Invention As described in detail above, the A having a metallized surface of the present invention
The IN sintered body substrate contains a highly concentrated layer of sintering aid that has good chemical affinity, i.e., wettability, both for the AIN sintered body itself as well as for the metallization material applied thereon. By providing this, the bonding strength between the two is significantly improved, and by limiting the thickness of the high concentration layer within a predetermined range, the unique characteristics of the AIN sintered body itself, such as high electrical insulation and thermal insulation, are improved. Conductivity and mechanical strength can be sufficiently maintained and exhibited.

Furthermore, in the present invention, by selecting an oxide of an element of group IV of the periodic table as an auxiliary agent, it is possible to combine a high concentration layer of this substance with a glass component or metal in a thick film paste, or alternatively with TI, Zr5Hf by a thin film method. It is possible to obtain a metallized AIN sintered product that is firmly bonded to the vapor-deposited film and has sufficient bonding strength for practical use.

[Brief explanation of drawings]

FIG. 1 attached hereto is a schematic cross-sectional view showing the structure of an AIN sintered body having a metallized surface according to the present invention. (Main reference numbers) 1..AIN sintered body, 2..metalized layer, 3..high concentration sintering aid layer,

Claims (7)

[Claims] (1) An aluminum nitride sintered body substrate, a high concentration layer of the sintering aid for aluminum nitride made of an oxide of Group IIIa element of the periodic table of elements formed thereon, and the high concentration sintering aid. An aluminum nitride sintered body having a metallized surface, comprising a metal layer provided on the substrate with an agent layer interposed therebetween. (2) The aluminum nitride sintered body having a metallized surface according to claim 1, wherein the high concentration sintering aid layer has a thickness within the range of 1 to 100 μm. (3) The above Group IIIa element is yttrium, cerium,
The aluminum nitride sintered body having a metallized surface according to claim 1 or 2, which is made of cadrinium, europium, samarium, holonium, or ytterbium. (4) The sintering aid layer is formed by the sintering aid being uniformly dispersed during sintering and being diffused by capillary action. An aluminum nitride sintered body having a metallized surface according to any one of items 1 to 3. (5) Any one of claims 1 to 4, wherein the metal layer is made of at least one metal selected from the group consisting of Ag, Au, Pt, and Pd. An aluminum nitride sintered body having a metallized surface according to item 1. (6) The metal layer is Mo, Mo-Mn, Cu or W
An aluminum nitride sintered body having a metallized surface according to any one of claims 1 to 4. (7) The metal layer is formed from the surface side of the aluminum nitride sintered body by (group IVa element)/(Mo or Pt)/(
Claims 1 to 4 have a three-layer structure in which Ni or Au are provided in this order.
An aluminum nitride sintered body having a metallized surface according to any one of the items.