JPH0674190B2 - Aluminum nitride sintered body having metallized surface - Google Patents

Aluminum nitride sintered body having metallized surface

Info

Publication number
JPH0674190B2
JPH0674190B2 JP4376686A JP4376686A JPH0674190B2 JP H0674190 B2 JPH0674190 B2 JP H0674190B2 JP 4376686 A JP4376686 A JP 4376686A JP 4376686 A JP4376686 A JP 4376686A JP H0674190 B2 JPH0674190 B2 JP H0674190B2
Authority
JP
Japan
Prior art keywords
oxide
sintered body
aluminum nitride
metallized
nitride sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4376686A
Other languages
Japanese (ja)
Other versions
JPS62202886A (en
Inventor
仁之 坂上
彰 笹目
Original Assignee
住友電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to JP4376686A priority Critical patent/JPH0674190B2/en
Publication of JPS62202886A publication Critical patent/JPS62202886A/en
Publication of JPH0674190B2 publication Critical patent/JPH0674190B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation

Description

Description: FIELD OF THE INVENTION The present invention relates to an aluminum nitride sintered body, and more particularly to an aluminum nitride sintered body having a metallized surface with highly reliable and practical bonding strength on the surface. It is about.

2. Description of the Related Art Generally, a semiconductor device or a device or device using them includes various active / passive elements, but these have a problem of heat generation. Therefore, in order to operate these elements and the like stably and reliably, it is necessary to perform the best thermal design at the time of mounting, which is extremely important in the design and manufacture of the semiconductor device and the like.

Further, in recent years, there has been a great trend such as high-speed operation and high integration of semiconductor devices, and particularly in LSI and the like, the degree of integration is remarkably improved. Along with this, the amount of heat generated per package also significantly increases. Therefore, the heat dissipation of the substrate material has come to be emphasized.

On the other hand, although alumina has been used as the ceramics for IC substrates in the past, the heat conductivity of conventional alumina sintered bodies is not sufficient to dissipate heat, and it is becoming difficult to cope with the increase in heat generation of IC chips. . Therefore, as a substitute for such an alumina substrate, a substrate or a heat sink using aluminum nitride having a high thermal conductivity has attracted attention, and many studies have been conducted for its practical use.

Since aluminum nitride originally has high thermal conductivity and high insulating properties as a material and is not toxic unlike beryllia, it is regarded as particularly promising as an insulating material or a packaging material in the semiconductor industry.

Since the aluminum nitride (AlN) sintered body has a high thermal conductivity, it has attracted attention as a substrate for integrated circuits (ICs) as described above, or as a heat sink. However, while having such interesting characteristics, the AlN sintered body has a problem in bonding strength with metal or glass. By the way, the metallization layer of this sintered body is directly applied to the surface thereof by using a thick film method in which a commercially available metallizing paste is applied or a thin film method in which a thin film of an active metal or a metal is formed by a method such as vapor deposition. It is generally used in a given state. However, it is not possible to obtain a bonding strength that can withstand practical use by such a method, and in practice, the surface is modified by some method before or during the metallizing operation, and other metal such as metal is used. It is necessary to improve the bondability with.

As a conventional method for modifying the surface of such an AlN sintered body, there is known a method of forming an oxide layer by subjecting the surface of the AlN sintered body to oxidation treatment or the like. That is, for example, it is a method of forming an oxide layer of SiO 2 , Al 2 O 3 , mullite, Fe 2 O 3 , CuO or the like on the surface of the AlN sintered body. However, the oxide layer as exemplified above has a good affinity for the glass layer, the alumina layer, etc. and causes a strong bond, but the affinity with the AlN sintered body itself is small, and the reliability is high. It is thought that there is a problem with sex.

Problems to be Solved by the Invention As described above, since the electric insulation and the thermal conductivity are extremely good, AlN sintering expected as an IC insulating substrate or heat sink material that requires good heat dissipation is required. The body is
Although its surface is often used after being metallized, there is a problem in terms of bonding strength to these. Therefore, various methods such as the above were considered, but none of them are sufficient.
Practicality No AlN sintered body having a metallized surface has been obtained so far.

That is, good bonding strength could not be obtained by the conventional thick film method of applying the AlN sintered body and the metallizing paste (for example, commercially available frit or chemical bond type). This is because the conductor paste was originally for Al 2 O 3 ,
This is because the reactivity with the lN layer is not good.

Further, there is known an oxide treatment on the surface of an AlN sintered body, which is known as a method of performing metallization while or after forming an oxide layer. However, the above SiO 2 , Al
Oxide layers such as 2 O 3 , mullite, Fe 2 O 3 and CuO have poor reactivity with AlN. Also, even if a reaction layer is formed, the reaction layer is essentially similar to the oxide layer.
The reactivity with the AlN surface is hardly improved, and therefore the bonding strength with the AlN sintered body is not improved. Further, this oxide treatment also has problems in terms of denseness and film bonding strength. That is, AlN
The surface oxide treatment is represented, for example, by the following formula: Nitrogen gas may be generated along with the reaction, and the obtained oxide film becomes a remarkably porous film.

In addition, it is difficult to expect sufficient bonding strength by the thick film method and the thin film method using an active metal. That is, this is because even when an active metal highly reactive with nitride is used, sufficient bonding strength between them cannot be obtained because AlN is extremely chemically stable, and bonding is difficult. It seems to be.

As described above, all the various attempts to make the AlN sintered body and the metallized layer have a practically sufficient bonding strength have failed. Therefore, we have developed a compound that has an affinity for both the metal layer or metal oxide as well as the AlN sintered body to ensure the bond between them and improve the bonding strength between the metallized layer and the AlN sintered body. The development of new technologies that can be done is eagerly desired.

Therefore, an object of the present invention is to improve the bonding strength between a metallized layer excellent in insulation and heat dissipation and an AlN sintered body.
That is, it has a highly reliable metallized surface with excellent bonding strength.
It is to provide an AlN sintered body.

Means for Solving the Problems In view of the current state of the conventional method as described above in improving the bonding strength between the metallized layer and the AlN sintered body, the present inventors have made various studies and researches in order to develop a new technology. As a result, it was found that it is effective to provide an intervening layer of a specific substance between the AlN sintered body and the metallized layer, or to mix a specific substance in the metallized layer in advance. The present invention has been completed based on new findings.

That is, the AlN sintered body having a metallized surface of the present invention, according to one embodiment, an AlN sintered body, and a metallized layer thereon,
An intervening layer containing one kind or two or more kinds selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof between them.

Further, according to another aspect of the present invention, an AlN sintered body having a metallized layer of the present invention is an AlN sintered body, and lead oxide, germanium oxide, bismuth oxide, antimony oxide and these provided thereon. From the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds formed between these metallized layers containing one or more selected from the group consisting of And an intervening layer containing one or more selected types.

In the first aspect of the present invention, the metallized layer material is a thick film of gold (Au), gold (Au) -platinum (Pt), platinum (Pt), silver (Ag) or Ag-palladium (Pd). A preferable example is a paste (first group), or a thick film paste of copper (Cu), tungsten (W) or molybdenum (Mo), and molybdenum (Mo) -manganese (Mn) (second group). it can. These materials can be formed into a metallized layer by first applying the thick film paste in the atmosphere of the first group, in an oxygen stream, or in a nitrogen atmosphere, and then firing it. Oxidizing atmosphere, weak reducing atmosphere or humidified atmosphere (humidity 10
% Or less), a thick film paste is similarly applied and baked to form a metallized layer.

In this case, the intervening layer to be formed is one or more selected from the group consisting of lead oxide, germanium oxide, antimony oxide and compounds thereof for the firing operation, and the metallized layer forming material and / or AlN. Reaction with substrate and /
Or as a diffusion layer and / or a mixed layer,
Alternatively, there may be a layer of one kind or two or more kinds selected from the group consisting of lead oxide, germanium oxide, antimony oxide and these compounds at the time of production, or a mixture alone.

Further, the above metallized layer is formed by forming one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds on the surface of the AlN sintered body, and then forming lead oxide and oxide. One or more selected from the group consisting of germanium, bismuth oxide, antimony oxide and compounds thereof, such as titanium (Ti) zirconium (Zr) or hafnium (Hf) as an active metal having high affinity (periodic table (Group IVa element of) as the innermost layer,
Then Mo, nickel (Ni), or Ti or Zr,
It can also be obtained by depositing Pt and Au in this order by a thin film forming method. In this case, the thin film forming method is not particularly limited, and the vacuum deposition method, the chemical vapor deposition method (CV
D method), plasma CVD method, sputtering method, ion plating method, ion vapor deposition thin film formation method (IVD), etc., depending on the material, type, etc.

In the first embodiment described above, the method for forming on the surface of one or more AlN sintered bodies selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds is It can be performed by a film method or a thin film method. More specifically, at least one selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof is sprayed, screen printed, vacuum deposited, chemical vapor deposited, or physical. It can be carried out by a vapor deposition method, an ion implantation method or the like, and its thickness is not particularly limited.

According to another aspect of the present invention, the metallization layer material includes Au, Au-Pt, Pt, Ag or Ag-Pd thick film paste and Cu, W, Mo or Mo-Mn thick film paste. It can be mentioned as a preferable example. These materials contain one kind or two kinds or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds, and the amount thereof is 0.01 to the total metal weight in the paste. It is preferably 10% by weight. The thick film paste containing one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds is directly applied on the surface of the AlN sintered body and then fired. By doing so, a two-layer structure is formed. However, in practice, one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds diffuse and react when the thick-film paste is fired, resulting in oxidation. The intervening layer is formed as a diffusion layer and / or a reaction layer containing one or more selected from the group consisting of lead, germanium oxide, bismuth oxide, antimony oxide and compounds thereof, and actually has a three-layer structure. Become. Further, also in this embodiment, as in the first embodiment, one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof is applied to the AlN surface in advance. Of course, it is also possible to apply a paste containing this on top of it and bake.

The AlN sintered body having a metallized surface of the present invention described above has a structure as shown in FIGS. 1 (a) and 1 (b), respectively. FIG. 1 (a) is a schematic cross-sectional view showing the first embodiment of the present invention, that is, an example having a three-layer structure.
N sintered body 1, metallized layer 2, and one or more layers selected from the group consisting of lead oxide, bismuth oxide, antimony oxide and their compounds and metallized layer and / or It is formed of a reaction layer with an AlN substrate and / or a diffusion layer and / or an intermediate intervening layer 3 composed of a mixed layer.

On the other hand, according to the second aspect of the present invention, as shown in FIG. 1 (b), in one or more compounds selected from the group consisting of lead oxide, bismuth oxide, antimony oxide and these compounds. Lead, bismuth, antimony or oxygen diffuses from the metallizing layer paste containing it to the AlN layer, and A
AlN sintered body 1 by reacting with 1N or / and its grain boundary layer
And a third layer 3 '(interface layer) different from the metallization layer 2'
To ensure the adhesion and denseness between these
Guarantees the strength of the sintered body.

Further, the AlN sintered body as a substrate useful in the present invention can be prepared by any conventionally known method, but since this AlN powder itself has extremely poor sinterability, it is obtained by sintering after powder molding. In many cases, the AlN sintered body obtained has a large amount of pores, resulting in poor thermal conductivity. This is AlN
The heat conduction mechanism of insulating ceramics such as sintered bodies is
Since N is composed of ionic bonds and covalent bonds, it is mainly composed of phonon conduction due to anharmonic interaction between lattice vibrations, so if there are many defects such as pores and impurities, phonon scattering is remarkable. This is because only low thermal conductivity can be obtained.

Therefore, it is preferable to use the one obtained by the method for producing an AlN sintered body which is dense and has a good thermal conductivity developed by the present inventors. In this method, at least one solution selected from the group consisting of yttrium (Y) and cerium (Ce) alkoxides is added to AlN powder having an oxygen content of 1.8% by weight or less in an amount of 0.1 to 10% by weight in terms of Y or Ce. Then, the mixture is mixed and decomposed, then molded, and then pressure-sintered under a non-oxidizing atmosphere at a temperature in the range of 1700 to 2200 ° C. (see Japanese Patent Application No. 60-184635). However, not limited to this example, there is no particular limitation as long as it is dense and has a good thermal conductivity.

Since the working AlN sintered body is excellent in insulation and thermal conductivity, semiconductor devices, especially highly integrated IC chips, high-speed operation,
It has been considered as a promising material for semiconductor packaging materials such as insulating substrates or heat sinks for high-heat-generating elements that operate at high frequencies. However, this AlN sintered body is insufficient in terms of its bonding strength, and although various researches have been conducted to improve this point from the past, what is sufficiently satisfactory and can withstand practical use is the current one. However, it has not been obtained.

By the way, the problem of the bonding strength of the AlN sintered body can be advantageously solved by devising as in the present invention at the time of metallizing the AlN sintered body.

In general, metals have a high affinity for oxygen, but Al
Since N is obviously a nitride, when a metallized layer is provided thereon, a metal / metal oxide and a simple substance of an element having an affinity for aluminum nitride or a compound thereof is interposed at these interfaces. It is considered that they can be firmly bonded.

From such technical standpoints, the present inventors have come to the view that one kind or two or more kinds are effective from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof, and the present invention Was completed.

That is, most of the known intervening layers on the surface of AlN are oxides, and in the present study, among those having a high chemical affinity for both metal / metal oxide and nitride, lead oxide, germanium oxide, One or more than one selected from the group consisting of bismuth oxide, antimony oxide and these compounds are effective, and their melting points are 650 to 1200 ° C, so AlN firing at a relatively low temperature, that is, 800 ° C to 1000 ° C is sufficient. Wetting, spreading and / or reacting with solids.

Further, since these compounds strongly adhere to the metal and the metal compound, it is considered that using these as an intervening layer guarantees sufficient bonding strength between the metallized layer and the AlN substrate.

This lead oxide, germanium oxide, bismuth oxide, antimony oxide, and a compound selected from one or more selected from the group consisting of these compounds, and the method for forming the AlN sintered body and the metallized layer interface are mainly 2 The following methods are conceivable. One of them is a thick film method or a thin film method on the surface of the AlN sintered body, and one or more kinds are selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and these compounds. A strong bond is achieved by forming a layer consisting of and applying a metallization layer therethrough.

The other method is to preliminarily add and mix one or two or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and their compounds into the metallized layer forming paste, and then mix this with AlN sintering. It can be achieved by applying it directly to the body and firing. In any case,
One or more members selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof, or lead, bismuth, germanium, antimony or / and oxygen atom AlN and / or metallized layer in the compound. Diffuses in and optionally reacts to form a diffusion layer and / or a reaction layer. This makes AlN
Bonding between the sintered body and the metallized layer will be strong, and an AlN sintered body substrate or the like having a metallized surface that can withstand practical use will be obtained.

Particularly, one or two selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof.
In a thick film paste method using a metallized paste containing at least one species, it is preferable to use Ag, Pt, Au-Pt, Au, Ag-Pd paste as a paste material when firing in an air atmosphere, in a humidified hydrogen atmosphere. It is preferable to use W, Mo, and Mn for the firing at 1, and Cu paste under the nitrogen atmosphere. In this case, the amount of one or more selected from the group consisting of lead oxide, bismuth oxide, germanium oxide, antimony oxide and these compounds in the paste is 0.01% of the total weight of the metal present in the paste as described above. It is preferably about 10% by weight. The reason is that when the amount of one or more of lead oxide, bismuth oxide, germanium oxide, antimony oxide, and compounds thereof exceeds 10% by weight of the total metal weight, AlN sintered body and metallized This is because there is no problem with respect to the adhesive strength with the layer, but there is a problem with other points such as wire bondability, and the interesting properties of high insulation and high thermal conductivity cannot be utilized. On the other hand, the lower limit of 0.01
This is because if the content is less than wt%, the desired sufficient joint strength cannot be obtained.

Thus, as in the present invention, one or more members selected from the group consisting of lead oxide, bismuth oxide, germanium oxide, antimony oxide and compounds thereof are interposed between the AlN sintered body and the metallized layer. Based on the above, various advantages can be obtained. That is, first of all, they provide a uniform, dense and strong bond between them. This is lead oxide for AlN as well as metals, oxides, glass, etc.
This is because one or more selected from the group consisting of germanium oxide, bismuth oxide, antimony oxide and these compounds give good wettability, and as a result, high adhesive strength is obtained.

Therefore, the AlN sintered body having a metallized surface of the present invention is applicable in all fields where the use of a material having both high heat dissipation and high insulation properties is required, in particular an insulating substrate for ICs, It can be used advantageously for heat sinks.

Examples Hereinafter, the AlN sintered body having a metallized layer of the present invention will be described in more detail with reference to Examples and its usefulness will be demonstrated, but the sintered body of the present invention is not limited by the following examples. .

Example 1 PbO, GeO 2 , Bi 2 O 3 or Sb 2 O 3 having a thickness of 1.0 μm was applied on the surface of an AlN substrate by a powder spray method, and then baked at 800 ° C. for 30 minutes in an air atmosphere. did. Then about 25μ on the surface
After applying Au, Ag-Pd, and Ag conductor paste to a thickness of m by a screen printing method, the paste was baked at 920 ° C for 10 minutes in an oxygen stream. A wire (copper wire 1 mmφ) was welded to the AlN sintered body having a metallized surface thus obtained by soldering, and the tensile strength at that time was measured.

The results were as follows.

Incidentally, as above the AlN substrate for comparison, directly paste was applied, was fired, the tensile strength respectively Au paste: 0.4Kg / mm 2, Ag- Pd paste: 0.5 Kg / mm 2, Ag paste: It was 0.2 Kg / mm 2 .

Example 2 Ag-Pd paste, PbO impinging on 0.01, 0.1, or 10% of its weight, was added GeO 2, Bi 2 O 3 or Sb 2 O 3, and mixed well. The PbO, GeO 2 , Bi 2 O 3 or Sb 2 O 3 thus obtained
The containing paste was applied on an AlN sintered body substrate to a thickness of about 20 μm, and then baked at 930 ° C. for 10 minutes in an oxygen stream to obtain an AlN sintered body having a metallized surface of the present invention. The tensile strength measured in the same manner as in Example 1 was as follows.

On the other hand, the tensile strength of the product obtained by directly applying the above-mentioned Ag-Pd paste not contained on the AlN substrate and firing was 0.5 Kg / mm 2 .

Example 3 PbO, GeO 2 , Bi 2 O 3 , or Sb 2 O having a thickness of 0.5 μm was formed on an AlN substrate.
After applying 3 , it was baked at 950 ° C. for 10 minutes in a nitrogen atmosphere. Then, on the surface, 5 kinds (Au,
Ag-Pd, Au-Pt and Ag)
It was baked at 0 ° C. for 30 minutes. When each was measured by the wire bond (gold wire φ30 μm) method, the following results were obtained. In addition, as a comparative example, the same measurement was performed for a product obtained by directly applying the paste and firing without applying the B metal.

Incidentally, it is practically necessary that this value is 6 g or more.

Example 4 Similar to Example 1, PbO, GeO 2 , Bi 2 O 3 , or Sb 2 O 3 was used.
The Cu paste was applied to the surface of the AlN substrate coated with with a thickness of about 18 μm by a screen printing method. Then, these samples were fired at 820 ° C. for 30 minutes in a humidified hydrogen stream. The tensile strength of the obtained product is 2.9, 3.8, 4.9 and 4.0 Kg / m, respectively.
It was m 2 . PbO, GeO 2 , Bi 2 O 3 or Sb 2 O for comparison
The paste was applied directly and baked without using 3 .

The tensile strength was as follows.

Comparative Example: Cu = 0.4 Kg / mm 2 Example 5 Each of the W and Mo-Mn pastes was applied to the surface of the AlN substrate coated with Bi 2 O 3 in the same manner as in Example 4 by screen printing to a thickness of about 25 μm.
Applied to the thickness of. These samples were fired for 20 minutes at 1610 and 1440 ° C. in a humidified hydrogen stream, respectively. The tensile strengths of the obtained products were 3.4 and 3.6 Kg / mm 2 , respectively. For comparison, each paste was directly applied and baked without using Bi 2 O 3 .

The tensile strength was as follows.

Comparative Example: W = 0.4 Kg / mm 2 Mo-Mn = 0.5 Kg / mm 2 Example 6 W paste (# WA-1200) manufactured by Asahi Chemical Laboratory Co., Ltd.
Bi 2 O 3 corresponding to 0.9% of the weight was added to the above and sufficiently mixed to obtain a Bi 2 O 3 -containing W paste.

This paste was screen-printed to a thickness of about 29 μm,
After coating on the surface of the AlN green sheet, simultaneous firing was performed in a nitrogen atmosphere. Adhesion strength (tensile strength) is 2.8Kg / mm 2
Met. On the other hand, an example in which Bi 2 O 3 was not used was also carried out, and the results were as follows.

Comparative Example: Adhesion Strength = 0.8 Kg / mm 2 Example 7 PbO, GeO 2 , Bi 2 O 3 or Sb 2 with respect to 100 parts by weight of Au powder.
O 3 powder was added 0.001 to 20 parts by weight, per 100 parts by weight of their metal mixture, an organic binder as ethyl cellulose and terpineol solution containing 6% concentration added after kneaded slurry in an amount of 20 parts by weight Au paste is applied to the AlN substrate by screen printing to a thickness of about 25 μm and baked at 905 ° C in the air for 10 minutes. The bond strength with the metallized surface is determined by the wire bond method (Au wire 30 mmφ) Regarding the wire bondability of the metallized surface, the number of wire bonds made by Au wire to the metallized surface was expressed as a percentage, and as shown in Table 1 below.
The grade was evaluated.

Example 8 In Cu paste, 0.5 wt% of PbO and Ge based on Cu metal powder
After adding and mixing O 2 , Bi 2 O 3 , or Sb 2 O 3 , the paste was screen-printed to a thickness of about 16 μm on the AlN substrate.
And was baked for 10 minutes at 710 ° C. in a nitrogen atmosphere. Au plating was applied to the fired metallized surface to a thickness of about 1 μm, and the wire bonding method (Au wire 30 mmφ) was performed as in Example 8.
The bonding strength was calculated by.

In addition, as a comparative example, the same operation was performed without adding anything to the Cu paste, metallization was performed, and the wire bond value was obtained.

EFFECTS OF THE INVENTION Thus, according to the AlN sintered body having a metallized surface of the present invention, since the bonding strength is insufficient, it has a high heat dissipation property despite having an interesting high thermal conductivity and high insulation property. Highly integrated as an insulating substrate or heat sink
It is possible to improve the bonding strength of an AlN sintered body, which was insufficient for practical use as an insulating material for ICs, high-frequency operability, and various high-speed operability elements, until it is practically used. became. It is selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and their compounds between the metallized layer and the AlN sintered body.
Or 2 or more kinds or compounds thereof, or one or more kinds selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, and / or antimony oxide and these compounds in the paste After adding / mixing with, the metallization layer is applied by the thick film method or the thin film method, so that the AlN and / or metallization layer and lead oxide, germanium oxide, bismuth oxide, antimony oxide, or a compound thereof can be used. It is based on the fact that one or more selected or compound layers thereof are strongly bonded to each other by forming a diffusion layer and / or a reaction layer.

Further, the metallized surface of the aluminum nitride sintered body according to the present invention is excellent in wire bonding strength, and thus is extremely suitable as a semiconductor device substrate or the like as an assembly mounting component of the device.

[Brief description of drawings]

1 (a) and 1 (b) are schematic cross-sectional views for explaining two preferable embodiments of the aluminum nitride sintered body having a metallized surface of the present invention, respectively. (Main reference numbers) 1 ... AlN substrate, 2, 2 '... metallized layer, 3, 3' ... intervening layer

Claims (9)

[Claims]
1. An aluminum nitride sintered body, a metallized layer formed thereon, and lead oxide, germanium oxide, bismuth oxide, antimony oxide formed between them, and a compound selected from the group consisting of these compounds. 1. An aluminum nitride sintered body having a metallized surface, characterized in that it is composed of one kind or an intervening layer containing two or more kinds.
2. The metallized layer is formed by firing a thick film paste of gold, gold-platinum, platinum, silver or silver-palladium in air, oxygen atmosphere or nitrogen atmosphere. An aluminum nitride sintered body having a metallized surface according to claim 1.
3. The metallized layer is formed by firing a thick film paste of copper, tungsten, molybdenum or molybdenum-manganese in a non-oxidizing atmosphere, a weak reducing atmosphere or a humidified atmosphere. An aluminum nitride sintered body having a metallized surface according to claim 1.
4. A metallization layer comprising a Group IVa element of the periodic table as the innermost layer, and then molybdenum and nickel in this order, or platinum and gold in that order by a thin film method. An aluminum nitride sintered body having a metallized surface according to claim 1.
5. The aluminum nitride sintered body having a metallized surface according to claim 4, wherein the Group IVa element is Ti or Zr.
6. An aluminum nitride sintered body having a metallized layer, wherein the metallized layer is one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof. At least one kind, and at least one kind selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds formed between the metallized layer and the sintered body. An aluminum nitride sintered body having the above metallized surface, characterized by having an intervening layer.
7. The metallized layer contains one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof. 0.01 to 10% by weight of the total metal weight. An aluminum nitride sintered body having a metallized surface according to claim 6, characterized in that it contains.
8. The gold, wherein the metallized layer contains at least one selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof,
It is obtained by applying gold-platinum, platinum, silver or silver-palladium thick film-paste on the surface of the aluminum nitride sintered body and firing in air, oxygen atmosphere or nitrogen atmosphere. An aluminum nitride sintered body having a metallized surface according to claim 7.
9. Copper, tungsten, molybdenum or molybdenum-manganese wherein the metallized layer contains one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and compounds thereof. The thick film paste is applied to the surface of the aluminum nitride sintered body and is obtained by firing in a non-oxidizing atmosphere, a weak reducing atmosphere or a humidified atmosphere. Alternatively, an aluminum nitride sintered body having a metallized surface according to item 7.
JP4376686A 1986-02-27 1986-02-27 Aluminum nitride sintered body having metallized surface Expired - Lifetime JPH0674190B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4376686A JPH0674190B2 (en) 1986-02-27 1986-02-27 Aluminum nitride sintered body having metallized surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4376686A JPH0674190B2 (en) 1986-02-27 1986-02-27 Aluminum nitride sintered body having metallized surface

Publications (2)

Publication Number Publication Date
JPS62202886A JPS62202886A (en) 1987-09-07
JPH0674190B2 true JPH0674190B2 (en) 1994-09-21

Family

ID=12672876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4376686A Expired - Lifetime JPH0674190B2 (en) 1986-02-27 1986-02-27 Aluminum nitride sintered body having metallized surface

Country Status (1)

Country Link
JP (1) JPH0674190B2 (en)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8873940B2 (en) 2010-08-06 2014-10-28 Dyson Technology Limited Fan assembly
US8882451B2 (en) 2010-03-23 2014-11-11 Dyson Technology Limited Fan
US8894354B2 (en) 2010-09-07 2014-11-25 Dyson Technology Limited Fan
US8932028B2 (en) 2009-03-04 2015-01-13 Dyson Technology Limited Fan assembly
US8967980B2 (en) 2010-10-18 2015-03-03 Dyson Technology Limited Fan assembly
US8967979B2 (en) 2010-10-18 2015-03-03 Dyson Technology Limited Fan assembly
US9004878B2 (en) 2009-11-06 2015-04-14 Dyson Technology Limited Fan having a magnetically attached remote control
US9011116B2 (en) 2010-05-27 2015-04-21 Dyson Technology Limited Device for blowing air by means of a nozzle assembly
USD728092S1 (en) 2013-08-01 2015-04-28 Dyson Technology Limited Fan
USD728770S1 (en) 2013-08-01 2015-05-05 Dyson Technology Limited Fan
USD728769S1 (en) 2013-08-01 2015-05-05 Dyson Technology Limited Fan
USD729375S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729376S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729373S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729372S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729374S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729925S1 (en) 2013-03-07 2015-05-19 Dyson Technology Limited Fan
US9127689B2 (en) 2009-03-04 2015-09-08 Dyson Technology Limited Fan assembly
US9127855B2 (en) 2011-07-27 2015-09-08 Dyson Technology Limited Fan assembly
US9151299B2 (en) 2012-02-06 2015-10-06 Dyson Technology Limited Fan
USD746425S1 (en) 2013-01-18 2015-12-29 Dyson Technology Limited Humidifier
USD746966S1 (en) 2013-01-18 2016-01-05 Dyson Technology Limited Humidifier
USD747450S1 (en) 2013-01-18 2016-01-12 Dyson Technology Limited Humidifier
US9249810B2 (en) 2007-09-04 2016-02-02 Dyson Technology Limited Fan
US9249809B2 (en) 2012-02-06 2016-02-02 Dyson Technology Limited Fan
USD749231S1 (en) 2013-01-18 2016-02-09 Dyson Technology Limited Humidifier
US9283573B2 (en) 2012-02-06 2016-03-15 Dyson Technology Limited Fan assembly
US9328739B2 (en) 2012-01-19 2016-05-03 Dyson Technology Limited Fan
US9366449B2 (en) 2012-03-06 2016-06-14 Dyson Technology Limited Humidifying apparatus
US9410711B2 (en) 2013-09-26 2016-08-09 Dyson Technology Limited Fan assembly
US9458853B2 (en) 2011-07-27 2016-10-04 Dyson Technology Limited Fan assembly
US9568021B2 (en) 2012-05-16 2017-02-14 Dyson Technology Limited Fan
US9568006B2 (en) 2012-05-16 2017-02-14 Dyson Technology Limited Fan
US9599356B2 (en) 2014-07-29 2017-03-21 Dyson Technology Limited Humidifying apparatus

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249810B2 (en) 2007-09-04 2016-02-02 Dyson Technology Limited Fan
US8932028B2 (en) 2009-03-04 2015-01-13 Dyson Technology Limited Fan assembly
US9599368B2 (en) 2009-03-04 2017-03-21 Dyson Technology Limited Nozzle for bladeless fan assembly with heater
US9127689B2 (en) 2009-03-04 2015-09-08 Dyson Technology Limited Fan assembly
US9004878B2 (en) 2009-11-06 2015-04-14 Dyson Technology Limited Fan having a magnetically attached remote control
US8882451B2 (en) 2010-03-23 2014-11-11 Dyson Technology Limited Fan
US9011116B2 (en) 2010-05-27 2015-04-21 Dyson Technology Limited Device for blowing air by means of a nozzle assembly
US8873940B2 (en) 2010-08-06 2014-10-28 Dyson Technology Limited Fan assembly
US8894354B2 (en) 2010-09-07 2014-11-25 Dyson Technology Limited Fan
US8967979B2 (en) 2010-10-18 2015-03-03 Dyson Technology Limited Fan assembly
US8967980B2 (en) 2010-10-18 2015-03-03 Dyson Technology Limited Fan assembly
US9127855B2 (en) 2011-07-27 2015-09-08 Dyson Technology Limited Fan assembly
US9458853B2 (en) 2011-07-27 2016-10-04 Dyson Technology Limited Fan assembly
US9335064B2 (en) 2011-07-27 2016-05-10 Dyson Technology Limited Fan assembly
US9328739B2 (en) 2012-01-19 2016-05-03 Dyson Technology Limited Fan
US9283573B2 (en) 2012-02-06 2016-03-15 Dyson Technology Limited Fan assembly
US9151299B2 (en) 2012-02-06 2015-10-06 Dyson Technology Limited Fan
US9249809B2 (en) 2012-02-06 2016-02-02 Dyson Technology Limited Fan
US9366449B2 (en) 2012-03-06 2016-06-14 Dyson Technology Limited Humidifying apparatus
US9568021B2 (en) 2012-05-16 2017-02-14 Dyson Technology Limited Fan
US9568006B2 (en) 2012-05-16 2017-02-14 Dyson Technology Limited Fan
USD746425S1 (en) 2013-01-18 2015-12-29 Dyson Technology Limited Humidifier
USD746966S1 (en) 2013-01-18 2016-01-05 Dyson Technology Limited Humidifier
USD749231S1 (en) 2013-01-18 2016-02-09 Dyson Technology Limited Humidifier
USD747450S1 (en) 2013-01-18 2016-01-12 Dyson Technology Limited Humidifier
USD729925S1 (en) 2013-03-07 2015-05-19 Dyson Technology Limited Fan
USD729374S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729372S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729373S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729376S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD729375S1 (en) 2013-03-07 2015-05-12 Dyson Technology Limited Fan
USD728769S1 (en) 2013-08-01 2015-05-05 Dyson Technology Limited Fan
USD728770S1 (en) 2013-08-01 2015-05-05 Dyson Technology Limited Fan
USD728092S1 (en) 2013-08-01 2015-04-28 Dyson Technology Limited Fan
US9410711B2 (en) 2013-09-26 2016-08-09 Dyson Technology Limited Fan assembly
US9599356B2 (en) 2014-07-29 2017-03-21 Dyson Technology Limited Humidifying apparatus

Also Published As

Publication number Publication date
JPS62202886A (en) 1987-09-07

Similar Documents

Publication Publication Date Title
EP0100232B2 (en) Substrate for semiconductor apparatus
US6261703B1 (en) Copper circuit junction substrate and method of producing the same
US5184399A (en) Method of manufacturing circuit board
US4517584A (en) Ceramic packaged semiconductor device
CN101309874B (en) Lead-free and cadmium-free conductive copper thick film pastes
US4732780A (en) Method of making hermetic feedthrough in ceramic substrate
US4626479A (en) Covering metal structure for metallized metal layer in electronic part
EP0798779B1 (en) Ceramic circuit board
US4840853A (en) Surface structure of AlN substrate and a process for producing the same
KR900006122B1 (en) Aluminum nitride sintered body and manufacture thereof
US5250229A (en) Silver-rich conductor compositions for high thermal cycled and aged adhesion
EP0874399A1 (en) Silicon nitride circuit board and semiconductor module
EP0153737B1 (en) Circuit substrate having high thermal conductivity
KR100271396B1 (en) A meta powder having a vitreous thin layer on the surface threrof and method of producing it, and conductor paste comprising said powder, and ceramic electronic component and a multilayer ceramic subtrate comprising said a conductor layer
EP2727898A1 (en) Brazing filler metal, brazing filler metal paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module
WO2010113892A1 (en) Process for producing metallized substrate and metallized substrate
Burgess et al. The Direct Bonding of Metals to Ceramics by the Gas‐Metal Eutectic Method
Iwase et al. Thick film and direct bond copper forming technologies for aluminum nitride substrate
EP0125730B1 (en) Copper metallization for dielectric materials
JP2002226259A (en) Composition for substrate of ceramic electronic parts, ceramic electronic parts and method for manufacturing laminated type ceramic electronic parts
JPH11504159A (en) Glass bonding layer for ceramic circuit board support substrate
JP5226511B2 (en) Ceramic-metal bonded body, manufacturing method thereof, and semiconductor device using the same
EP0278741B1 (en) Electronic component parts and method for manufacturing the same
EP0164841A1 (en) Ceramic composition for dielectrics
US4695517A (en) Composite layer aluminum nitride base sintered body