JPS6353158B2 - - Google Patents
Info
- Publication number
- JPS6353158B2 JPS6353158B2 JP6182979A JP6182979A JPS6353158B2 JP S6353158 B2 JPS6353158 B2 JP S6353158B2 JP 6182979 A JP6182979 A JP 6182979A JP 6182979 A JP6182979 A JP 6182979A JP S6353158 B2 JPS6353158 B2 JP S6353158B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- solution
- reaction system
- impurity
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 239000007791 liquid phase Substances 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 7
- 238000011109 contamination Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 24
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 15
- 229910005540 GaP Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 4
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012047 saturated solution Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6182979A JPS55154399A (en) | 1979-05-18 | 1979-05-18 | Liquid epitaxial growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6182979A JPS55154399A (en) | 1979-05-18 | 1979-05-18 | Liquid epitaxial growing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55154399A JPS55154399A (en) | 1980-12-01 |
| JPS6353158B2 true JPS6353158B2 (enrdf_load_stackoverflow) | 1988-10-21 |
Family
ID=13182368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6182979A Granted JPS55154399A (en) | 1979-05-18 | 1979-05-18 | Liquid epitaxial growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154399A (enrdf_load_stackoverflow) |
-
1979
- 1979-05-18 JP JP6182979A patent/JPS55154399A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55154399A (en) | 1980-12-01 |
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