JPS6353157B2 - - Google Patents
Info
- Publication number
- JPS6353157B2 JPS6353157B2 JP54005399A JP539979A JPS6353157B2 JP S6353157 B2 JPS6353157 B2 JP S6353157B2 JP 54005399 A JP54005399 A JP 54005399A JP 539979 A JP539979 A JP 539979A JP S6353157 B2 JPS6353157 B2 JP S6353157B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- magnetic field
- single crystal
- melt
- rotating magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000000155 melt Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP539979A JPS55100296A (en) | 1979-01-18 | 1979-01-18 | Production of silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP539979A JPS55100296A (en) | 1979-01-18 | 1979-01-18 | Production of silicon single crystal |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12592383A Division JPS5973491A (ja) | 1983-07-11 | 1983-07-11 | 半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55100296A JPS55100296A (en) | 1980-07-31 |
| JPS6353157B2 true JPS6353157B2 (zh) | 1988-10-21 |
Family
ID=11610061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP539979A Granted JPS55100296A (en) | 1979-01-18 | 1979-01-18 | Production of silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55100296A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5973491A (ja) * | 1983-07-11 | 1984-04-25 | Osaka Titanium Seizo Kk | 半導体単結晶の製造方法 |
| JPS6033291A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Ceramics Co Ltd | 単結晶シリコンの製造方法 |
| JPS6236096A (ja) * | 1985-08-07 | 1987-02-17 | Kawasaki Steel Corp | 単結晶の製造方法およびその装置 |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| CN102653882A (zh) * | 2012-05-11 | 2012-09-05 | 天通控股股份有限公司 | 一种直拉硅单晶的装料方法及其装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949307A (zh) * | 1972-09-19 | 1974-05-13 |
-
1979
- 1979-01-18 JP JP539979A patent/JPS55100296A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949307A (zh) * | 1972-09-19 | 1974-05-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55100296A (en) | 1980-07-31 |
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