JPS6351391B2 - - Google Patents

Info

Publication number
JPS6351391B2
JPS6351391B2 JP56048319A JP4831981A JPS6351391B2 JP S6351391 B2 JPS6351391 B2 JP S6351391B2 JP 56048319 A JP56048319 A JP 56048319A JP 4831981 A JP4831981 A JP 4831981A JP S6351391 B2 JPS6351391 B2 JP S6351391B2
Authority
JP
Japan
Prior art keywords
region
planar region
type
channel
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56048319A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5717166A (en
Inventor
Dee Kuraaku Marion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS5717166A publication Critical patent/JPS5717166A/ja
Publication of JPS6351391B2 publication Critical patent/JPS6351391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP4831981A 1980-03-31 1981-03-31 Charge coupled device Granted JPS5717166A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13555480A 1980-03-31 1980-03-31

Publications (2)

Publication Number Publication Date
JPS5717166A JPS5717166A (en) 1982-01-28
JPS6351391B2 true JPS6351391B2 (OSRAM) 1988-10-13

Family

ID=22468600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4831981A Granted JPS5717166A (en) 1980-03-31 1981-03-31 Charge coupled device

Country Status (3)

Country Link
EP (1) EP0037200B1 (OSRAM)
JP (1) JPS5717166A (OSRAM)
DE (1) DE3169317D1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001530A (en) * 1985-09-04 1991-03-19 Unisearch Limited Infrared Schottky junction charge coupled device
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
KR930007532B1 (ko) * 1990-07-12 1993-08-12 금성일렉트론 주식회사 Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176369A (en) * 1977-12-05 1979-11-27 Rockwell International Corporation Image sensor having improved moving target discernment capabilities

Also Published As

Publication number Publication date
EP0037200B1 (en) 1985-03-20
JPS5717166A (en) 1982-01-28
DE3169317D1 (en) 1985-04-25
EP0037200A1 (en) 1981-10-07

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