JPS6350077A - Semiconductor light receiving device - Google Patents
Semiconductor light receiving deviceInfo
- Publication number
- JPS6350077A JPS6350077A JP61194602A JP19460286A JPS6350077A JP S6350077 A JPS6350077 A JP S6350077A JP 61194602 A JP61194602 A JP 61194602A JP 19460286 A JP19460286 A JP 19460286A JP S6350077 A JPS6350077 A JP S6350077A
- Authority
- JP
- Japan
- Prior art keywords
- light
- type
- region
- film
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical class [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は、Ｓｔ半導体受光装置において、受光面上に
螢光体膜を配設し、該螢光体膜が入射光に励起されて発
生ずる光及び該受光面を通過した入射光を該半導体基体
において吸収させることにより、
その受光帯域を拡張するものである。Detailed Description of the Invention [Summary] The present invention provides an St semiconductor light receiving device in which a phosphor film is disposed on the light receiving surface, and the phosphor film is excited by incident light to emit light and light generated. The light-receiving band is expanded by causing the semiconductor substrate to absorb the incident light that has passed through the light-receiving surface.
本発明は半導体受光装置、特に受光可能な帯域が広げら
れたＳｔ半導体受光装置の構造に関する。The present invention relates to a semiconductor light-receiving device, and particularly to a structure of an St semiconductor light-receiving device whose light-receiving band is widened.
光通信等の各種の光応用システムにおいて、所要の受光
帯域に適合する半導体材料で構成された受光装置が用い
られているが、半導体材料によって定まる帯域幅より広
い受光帯域が例えば試験装置などで要求されており、そ
の実現が強く要望されている。In various optical application systems such as optical communication, light receiving devices made of semiconductor materials that match the required light receiving band are used, but for example, test equipment requires a wider light receiving band than the bandwidth determined by the semiconductor material. The realization of this goal is strongly desired.
半導体受光装置は目的に応じて多くの構造が開発されて
いるが、可視〜近赤外帯域に適するシリコン（Ｓｔ）ア
バランシホトダイオード（ＡＰＤ）の従来例の模式側断
面図を第３図に示す。Many structures have been developed for semiconductor photodetectors depending on the purpose, and Figure 3 shows a schematic side sectional view of a conventional example of a silicon (St) avalanche photodiode (APD) suitable for the visible to near-infrared band. .
本従来例において、２１はｐ＋型Ｓｉ基板、２２はｐ−
型光吸収領域、２３はｐ型アバランシ領域、２４はに型
拡散領域、２５はｎ型ガードリング領域、２６はｐ＋型
チャネルストッパ領域、２８は二酸化シリコン（ＳｉＯ
２）膜、２９はｎ側電極、３０はｐ側電極である。In this conventional example, 21 is a p+ type Si substrate, 22 is a p-
23 is a p-type avalanche region, 24 is a di-type diffusion region, 25 is an n-type guard ring region, 26 is a p + type channel stopper region, 28 is a silicon dioxide (SiO
2) In the film, 29 is an n-side electrode, and 30 is a p-side electrode.
前記従来例では半導体材料にＳｉを用いているが、半導
体材料にゲルマニウム（Ｇｅ）を用い各領域の導電型を
反転した類似の構造で、１．３μｍ帯域の光通信用ＡＰ
Ｄが提供されている。The conventional example uses Si as the semiconductor material, but it has a similar structure in which germanium (Ge) is used as the semiconductor material and the conductivity type of each region is reversed.
D is provided.
石英系光ファイバによる伝送に適する１、３〜１．６賜
帯域には、更にインジウム燐／インジウムガリウム砒素
（ＩｎＰ／ＩｎＧａＡｓ）系等の化合物半導体ＡＰＤが
開発されているが、半導体材料が吸収し得る光の波長は
そのバンドギャップで定まるために、第４図に例示する
如く、半導体受光装置の量子効率は光吸収領域の半導体
材料に支配される。Compound semiconductor APDs such as those based on indium phosphide/indium gallium arsenide (InP/InGaAs) have been developed for the 1.3 to 1.6 band, which is suitable for transmission using silica-based optical fibers; Since the wavelength of the obtained light is determined by its bandgap, the quantum efficiency of the semiconductor light receiving device is controlled by the semiconductor material of the light absorption region, as illustrated in FIG.
またＡＰＤではアバランシ増倍率及び増倍雑音が極めて
重要な特性であるが、これらの値は概ね下記の様であり
、５ｉ−ＡＰＤはこの様に増倍率が大きく増倍雑音が少
なくて、安定性も最も優れている。In addition, the avalanche multiplication factor and multiplication noise are extremely important characteristics in APD, and these values are roughly as shown below.The 5i-APD has a high multiplication factor and low multiplication noise, and is stable. is also the best.
Ｓｉ−ΔＰＤ Ｇｅ−ＡＰＤ ＩｎＧａＡ
ｓ−ＡＰＤ増倍率Ｍ
最大値 ５００〜１０００ ５０〜１００ 〜
５０使用値 ５０〜２００ 〜１０ ４〜５増倍
雑音パラメータに
０．２２〜０．３ ０．５〜０．９ 〜０．７〔発
明が解決しようとする問題点〕
半導体受光装置は上述の如く目的とする波長帯域に適合
することが必要であが、例えば多種のレーザを対象とす
る試験装置などにおいて、上述の如き各半導体受光装置
を包含する受光帯域を備え、しかも特性、安定性等が優
れた半導体受光装置が要望されている。Si-ΔPD Ge-APD InGaA
s-APD multiplication factor M Maximum value 500-1000 50-100 ~
50 Usage value 50-200 ~10 4-5 Multiplication noise parameter 0.22-0.3 0.5-0.9 ~0.7 [Problem to be solved by the invention] The semiconductor photodetector device is However, for example, in a test device that targets various types of lasers, it is necessary to have a light receiving band that covers each semiconductor light receiving device as described above, and to have characteristics, stability, etc. There is a demand for a semiconductor light receiving device with excellent characteristics.
前記問題点は、シリコンからなる半導体基体の受光面上
に螢光体膜が配設され、該螢光体膜が入射光に励起され
て発生する光及び該受光面を通過した入射光を該半導体
基体において吸収する本発明による半導体受光装置によ
り解決される。The problem is that a phosphor film is disposed on the light-receiving surface of a semiconductor substrate made of silicon, and the phosphor film is excited by the incident light and separates the light generated and the incident light that passes through the light-receiving surface. This problem is solved by a semiconductor light receiving device according to the present invention that absorbs light in a semiconductor substrate.
本発明による半導体受光装置は、例えば前記従来例の５
ｉ−ＡＰＤに相当する半導体基体の受光面上に、受光面
に接し或いは離隅し、その全面に拡がり或いは１部分に
限って配設した螢光体膜が入射光に励起されて発生する
光と、受光面を通過した入射光とを受光する。The semiconductor light receiving device according to the present invention is, for example, the conventional example 5.
Light generated when incident light excites a phosphor film disposed on the light-receiving surface of a semiconductor substrate corresponding to an i-APD, in contact with or in a corner of the light-receiving surface, and extending over the entire surface or only in one part of the light-receiving surface. and the incident light that has passed through the light receiving surface.
この螢光体膜に例えば赤外帯域の入射光により可視光を
発生する螢光材料を用いることにより、Ｓｉ受光装置本
来の受光可能帯域より長波長の赤外帯域を受光すること
が可能となる。この様な螢光材料としては、遷移金属に
アルカリ土類金属を付加した下記の例などがある。By using, for example, a fluorescent material that generates visible light in response to incident light in the infrared band for this phosphor film, it becomes possible to receive light in the infrared band with a longer wavelength than the band that the Si light receiving device can originally receive. . Examples of such fluorescent materials include the following examples in which alkaline earth metals are added to transition metals.
ストロンチウム（Ｓｒ）セレン（Ｓｅ） ：タリウム（
ＴＩ）系；波長２μｍ付近の赤外光により可視光を発光
。Strontium (Sr) Selenium (Se): Thallium (
TI) system; emits visible light using infrared light with a wavelength of around 2 μm.
ストロンチウム（Ｓｒ）硫黄（Ｓ）：ユウロピウム（Ｅ
ｕ）系；波長１μｍ付近の赤外光により可視光を発光。Strontium (Sr) Sulfur (S): Europium (E
u) System; emits visible light using infrared light with a wavelength of around 1 μm.
なお逆に螢光体膜に入射光より長波長の可視光を発生す
る螢光体を用いることにより、Ｓｉ受光装置本来の受光
可能帯域より短波長の帯域を受光することも可能である
。Conversely, by using a phosphor that generates visible light with a longer wavelength than the incident light in the phosphor film, it is also possible to receive light in a wavelength band shorter than the light receiving band originally available for the Si light receiving device.
以下本発明を実施例により具体的に説明する。 The present invention will be specifically explained below using examples.
第１図は本発明の実施例を示す模式斜視断面図であり、
その上部は受光面、下部は側断面を示す。FIG. 1 is a schematic perspective sectional view showing an embodiment of the present invention,
The upper part shows the light-receiving surface, and the lower part shows the side cross section.
同図において、１はｐ＋型Ｓｉ基板、２はｐ−型光吸収
領域、３はｐ型アバランシ領域、４は忙型拡散領域、５
はｎ型ガードリング領域、６はｆ型チャネルストッパ領
域、７は本発明による螢光体膜、８はＳｉＯ□膜、９は
ｎ側電極、１０はｐ側電極である。In the figure, 1 is a p+ type Si substrate, 2 is a p- type light absorption region, 3 is a p-type avalanche region, 4 is a busy diffusion region, and 5 is a p-type light absorption region.
6 is an n-type guard ring region, 6 is an f-type channel stopper region, 7 is a phosphor film according to the present invention, 8 is a SiO□ film, 9 is an n-side electrode, and 10 is a p-side electrode.
本実施例は螢光体膜７として、前記ＳｒＳ：Ｅｕ系螢光
材料からなる厚さ約０．５〜１．０如の膜をリング状に
配設し、第２図に例示する量子効率を得ている。In this embodiment, a film made of the SrS:Eu-based fluorescent material and having a thickness of about 0.5 to 1.0 mm is arranged in a ring shape as the phosphor film 7, and the quantum efficiency shown in FIG. I am getting .
本実施例では螢光体膜７をリング状としているが、特に
開口を設けなくてもよい。この場合には螢光体膜７の厚
さ等によって入射光の透過率を選択して受光感度特性を
制御する。Although the phosphor film 7 is ring-shaped in this embodiment, it is not necessary to provide any openings. In this case, the transmittance of incident light is selected depending on the thickness of the phosphor film 7, etc. to control the light-receiving sensitivity characteristics.
また以上の説明は／ＩＰＤを引例しているが、本発明は
半導体基体にアバランシ増倍機能を備えないｐ−４−ｎ
ホトダイオード等についても適用可能である。Further, although the above explanation refers to /IPD, the present invention is a p-4-n device which does not have an avalanche multiplication function on the semiconductor substrate
It is also applicable to photodiodes and the like.
以上説明した如く本発明によれば、Ｓｉ受光装置の優れ
た特性、安定性を基礎としてその受光帯域が拡張され、
例えばレーザ試験装置等における適用範囲が拡大されて
、光応用システム等の進展に大きく寄与する。As explained above, according to the present invention, the light receiving band is expanded based on the excellent characteristics and stability of the Si light receiving device.
For example, the scope of application in laser testing equipment, etc. will be expanded, and this will greatly contribute to the advancement of optical application systems.
第１図は本発明の実施例の模式斜視断面図、第２図は実
施例の量子効率の例を示す図、第３図は従来例の模式側
断面図、
第４図はＳｉ及びＧｅ受光装置の量子効率の例を示す図
である。
図において、
■はｐ＋型Ｓｔ基板、
２ばｐ−型光吸収領域、
３はｐ型アバランシ領域、
４はｆ型拡散領域、
５はｎ型ガードリング領域、
６はｐ十型チャネルストッパｖ４域、
７は本発明による螢光体膜、
８はＳｉＯ□膜、
９はｎ側電極、
１０はｐ側電極を示す。
尖先例／）模式側断面図
殆 １ 図
θ、４ θＰ ／、２ ／６ ２
０波長Ｃｐ−）
皺釆移゛Ｊの模式（ｉｔ・１町面図 漉 ３ 図
波長（μ町
５創びＧｅ受を装置カ量子妨率
第 ４ 図Fig. 1 is a schematic perspective sectional view of an embodiment of the present invention, Fig. 2 is a diagram showing an example of quantum efficiency of the embodiment, Fig. 3 is a schematic side sectional view of a conventional example, and Fig. 4 is Si and Ge light reception. It is a figure showing an example of quantum efficiency of a device. In the figure, 2 is a p+ type St substrate, 2 is a p- type light absorption region, 3 is a p-type avalanche region, 4 is an f-type diffusion region, 5 is an n-type guard ring region, 6 is a p-type channel stopper v4 region , 7 is a phosphor film according to the present invention, 8 is a SiO□ film, 9 is an n-side electrode, and 10 is a p-side electrode. Tip example/) Schematic side sectional view Most 1 Figure θ, 4 θP /, 2 /6 2
0 wavelength Cp-) Schematic diagram of wrinkle transfer J (it・1 Town map) 3 Diagram wavelength (μ town 5 Create Ge receiver and equipment quantum rejection factor 4)
Claims (1)
が配設され、該螢光体膜が入射光に励起されて発生する
光及び該受光面を通過した入射光を該半導体基体におい
て吸収することを特徴とする半導体受光装置。 ２）前記螢光体膜が赤外帯域の入射光により可視光を発
生する螢光体からなることを特徴とする特許請求の範囲
第１項記載の半導体受光装置。[Claims] 1) A phosphor film is provided on a light-receiving surface of a semiconductor substrate made of silicon, and the phosphor film is excited by incident light to generate light and the light that passes through the light-receiving surface. A semiconductor light-receiving device characterized in that light is absorbed in the semiconductor substrate. 2) The semiconductor light-receiving device according to claim 1, wherein the phosphor film is made of a phosphor that generates visible light in response to incident light in an infrared band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194602A JPS6350077A (en) | 1986-08-20 | 1986-08-20 | Semiconductor light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194602A JPS6350077A (en) | 1986-08-20 | 1986-08-20 | Semiconductor light receiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350077A true JPS6350077A (en) | 1988-03-02 |
Family
ID=16327276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61194602A Pending JPS6350077A (en) | 1986-08-20 | 1986-08-20 | Semiconductor light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350077A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0843363A1 (en) * | 1996-11-18 | 1998-05-20 | Nec Corporation | Solid state camera element comprising a wavelength converter |
| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57156528A (en) * | 1981-03-22 | 1982-09-27 | Nec Corp | Image detector using infrared rays |
| JPS57193078A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Semiconductor light oscillator with monitor |
| JPS5955075A (en) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radiation detector |
-
1986
- 1986-08-20 JP JP61194602A patent/JPS6350077A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57156528A (en) * | 1981-03-22 | 1982-09-27 | Nec Corp | Image detector using infrared rays |
| JPS57193078A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Semiconductor light oscillator with monitor |
| JPS5955075A (en) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radiation detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0843363A1 (en) * | 1996-11-18 | 1998-05-20 | Nec Corporation | Solid state camera element comprising a wavelength converter |
| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
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