JPS6349389B2 - - Google Patents
Info
- Publication number
- JPS6349389B2 JPS6349389B2 JP54020093A JP2009379A JPS6349389B2 JP S6349389 B2 JPS6349389 B2 JP S6349389B2 JP 54020093 A JP54020093 A JP 54020093A JP 2009379 A JP2009379 A JP 2009379A JP S6349389 B2 JPS6349389 B2 JP S6349389B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- thickness
- information
- dnax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims 4
- 238000007667 floating Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009379A JPS55113364A (en) | 1979-02-22 | 1979-02-22 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009379A JPS55113364A (en) | 1979-02-22 | 1979-02-22 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55113364A JPS55113364A (en) | 1980-09-01 |
JPS6349389B2 true JPS6349389B2 (pt) | 1988-10-04 |
Family
ID=12017490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009379A Granted JPS55113364A (en) | 1979-02-22 | 1979-02-22 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113364A (pt) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS627149A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 半導体装置における書込み、読出し方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6040710A (ja) * | 1983-06-09 | 1985-03-04 | オ−トモテイブ・エンジン・アソシエイツ | ポペツト弁 |
-
1979
- 1979-02-22 JP JP2009379A patent/JPS55113364A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6040710A (ja) * | 1983-06-09 | 1985-03-04 | オ−トモテイブ・エンジン・アソシエイツ | ポペツト弁 |
Also Published As
Publication number | Publication date |
---|---|
JPS55113364A (en) | 1980-09-01 |
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