JPS63488A - Method for patterning electrically conductive film - Google Patents
Method for patterning electrically conductive filmInfo
- Publication number
- JPS63488A JPS63488A JP14230386A JP14230386A JPS63488A JP S63488 A JPS63488 A JP S63488A JP 14230386 A JP14230386 A JP 14230386A JP 14230386 A JP14230386 A JP 14230386A JP S63488 A JPS63488 A JP S63488A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- polymer film
- conductive
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000000059 patterning Methods 0.000 title claims description 3
- 229920006254 polymer film Polymers 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 238000010030 laminating Methods 0.000 claims 1
- -1 polyethylene Polymers 0.000 abstract description 13
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 239000004698 Polyethylene Substances 0.000 abstract description 6
- 229920000573 polyethylene Polymers 0.000 abstract description 6
- 229920003051 synthetic elastomer Polymers 0.000 abstract description 5
- 239000005061 synthetic rubber Substances 0.000 abstract description 5
- 239000003522 acrylic cement Substances 0.000 abstract description 4
- 229920006267 polyester film Polymers 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 61
- 238000005530 etching Methods 0.000 description 14
- 229920001940 conductive polymer Polymers 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 102100041010 Proteasome assembly chaperone 3 Human genes 0.000 description 1
- 101710179510 Proteasome assembly chaperone 3 Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明 ゛
(産業上の利用分野)
本発明は、導電性フィルムのパターン形成方法に関し、
詳しくは基板としての高分子フィルムに蒸着等により施
された金属或いは金属醸化物からなる導体あるいは半導
体膜をエツチングして必要とする導電性膜よりなるパタ
ーンを形成する工程に於ける導電性フィルムの搬送形態
に関するものである。[Detailed Description of the Invention] 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for forming a pattern on a conductive film.
Specifically, the process of etching a conductor or semiconductor film made of a metal or metal compound applied to a polymer film as a substrate by vapor deposition or the like to form a pattern of the required conductive film. This relates to the mode of transportation.
(従来技術および問題点)
高分子フィルム上に導電性膜を89けた導電性高分子フ
ィルムは、配線基板、ヒーター、タッチパネルの電極、
或いは液晶表示用の電極等への利用が考えられるが、一
般にこのような用途に利用するためには普通は全面的に
設けられた導電性膜の内必要部分を残し、その他の部分
を溶解し取り除くこと、即ち、所定のパターンにエツチ
ングすることが必要となる。(Prior art and problems) A conductive polymer film with 89 digits of conductive film on a polymer film can be used for wiring boards, heaters, touch panel electrodes, etc.
Alternatively, it can be used as electrodes for liquid crystal displays, but generally, in order to use it for such purposes, the conductive film that is provided on the entire surface is usually left with the necessary parts and the other parts are dissolved. It is then necessary to remove or etch it into a predetermined pattern.
最近、導電性高分子フィルムを電極とする液晶表示素子
例えば液晶テレビの開発が活発に行なわれているが、こ
の様な表示素子の電極として利用する場合、最近の所謂
軽薄短小傾向から極めて細い電極が要求され、パターン
形成工程中に導電性高分子フィルムにキズ、汚れ等が発
生することなく加工することが必要となってきている。Recently, there has been active development of liquid crystal display elements such as liquid crystal televisions that use conductive polymer films as electrodes. However, when used as electrodes for such display elements, extremely thin electrodes are required due to the recent trend towards light, thin, and short size. It has become necessary to process conductive polymer films without causing scratches, stains, etc. during the pattern forming process.
基板上に形成された導電性膜をエツチングする方法とし
ては、従来よりスクリーン印刷法やフォトレジスト法に
よって先ず導電性股上に所定パターンのマスクを形成し
、しかる後にエツチングし、その後該パターン状マスク
を剥離剤により溶解除去する方法が行なわれている。こ
の様なエツチング方法は従来ネサガラスには多く用いら
れていたが、基板がガラスのためローラーコンベアー上
を動かしながらエツチング、洗條などの処理を行っても
なんら支障はないが、基板がガラスから高分子フィルム
に置きかわると、高分子フィルムが柔軟で曲がり易く且
つ軽いため、スムースな搬送が難しく又ローラーとの摩
擦で傷がつき汚れがつくため導電性高分子フィルムをネ
サガラスと同様のエツチング装置に通すと予想以上に導
電性の不十分なものしか1qられない事が判った。Conventionally, as a method for etching a conductive film formed on a substrate, a mask with a predetermined pattern is first formed on the conductive layer by a screen printing method or a photoresist method, then etching is performed, and then the patterned mask is etched. A method of dissolving and removing using a stripping agent is used. This type of etching method has been widely used for Nesa glass in the past, but since the substrate is glass, there is no problem in performing etching, washing, etc. while moving it on a roller conveyor, but if the substrate is raised from glass When replacing the conductive polymer film with a molecular film, the polymer film is flexible, bends easily, and is light, making it difficult to convey smoothly and causing scratches and stains due to friction with the rollers. When I passed it through, I found that only 1q of material with insufficient conductivity could be removed, which was more than expected.
(問題点の解決方法)
本発明者は上記の欠点を改良すべく導電性高分子フィル
ムを堅い基板上に貼り合せ、エツチング工程を通す方法
を試みたが、この場合も基板との接触により導電性高分
子フィルムにキズがつき、又大変手数がかかることが判
り、更に改良を試みて本発明に至った。即ち本発明は片
面に導電性膜を有する高分子フィルムの導電性膜の反対
面に表面保護フィルムを貼り合せ、貼り合せものの厚み
を170μm以上に比較的曲がりにククシた状態でエツ
チング等の処理を行うことを特徴とする導電フィルムの
パターン加工法である。(Method for solving the problem) In order to improve the above-mentioned drawbacks, the present inventor tried a method of bonding a conductive polymer film onto a hard substrate and passing it through an etching process. It was found that the adhesive polymer film was scratched and was very time consuming, so further improvements were attempted and the present invention was developed. That is, in the present invention, a surface protective film is bonded to the opposite side of the conductive film of a polymer film having a conductive film on one side, and a process such as etching is performed in a relatively curved state to make the thickness of the bonded film 170 μm or more. This is a method of patterning a conductive film, which is characterized by:
本発明方法の被処理物である導電性高分子フィルムにあ
ける導電性膜としては銀、銅、アルミニウム等の金属薄
膜或いは酸化すず、酸化インジウム等の金属酸化物薄膜
等が挙げられる。これらの薄膜は通常蒸着等によりIM
される。なお蒸着方法としては、真空蒸着法、RF及び
DCスパッタリング並びにイオンブレーティング法など
いずれの方法によっても良く、高分子フィルムとしては
、ポリスチレン、ポリアクリル酸メチル、ポリカーボネ
ート、ポリ塩化ビニル、アセテート、ポリエーテルサル
ホン、ポリサルホン、ポリエチレン、ポリプロピレン、
ポリアミド、ポリテトラフロロエチレン、ポリエステル
などのプラスチック類が挙げられる。Examples of the conductive film to be formed on the conductive polymer film to be processed in the method of the present invention include thin films of metals such as silver, copper, and aluminum, and thin films of metal oxides such as tin oxide and indium oxide. These thin films are usually formed by IM by vapor deposition etc.
be done. The vapor deposition method may be any method such as vacuum vapor deposition, RF and DC sputtering, and ion blating. Examples of the polymer film include polystyrene, polymethyl acrylate, polycarbonate, polyvinyl chloride, acetate, and polyether. Sulfone, polysulfone, polyethylene, polypropylene,
Examples include plastics such as polyamide, polytetrafluoroethylene, and polyester.
本発明方法で使用する表面保護フィルムとしては片面に
粘着性を有するもので、導電性高分子フィルムに貼り合
せたときの総厚みが170μm以上おれば何でも良いが
好ましくは導電性高分子フィルムに貼り合せたときの総
厚みが170〜25Oμm、(例えば導電性高分子フィ
ルムの厚みが100μmの場合、保護イルムの厚みは7
0〜150μm)標準粘着力5〜209/25m巾程度
の軽粘着フィルムが良い。例えば、ポリエチレンフィル
ムにアクリル系粘着剤を塗布したフィルム、ポリエチレ
ンフィルムに合成ゴム系粘着剤を塗イFしたフィルム、
ポリプロピレンフィルムに合成ゴム系粘着剤を塗布した
フィルム、ポリエステルフィルムにアクリル系粘着剤を
塗布したフィルム、ポリエステルフィルムに合成ゴム系
粘着剤を塗布したフィルム、ポリエチレンと粘着剤との
共押出しフィルム、ポリエステルと粘着剤との共押出し
フィルム等が挙げられる。The surface protection film used in the method of the present invention may be any film that has adhesiveness on one side and has a total thickness of 170 μm or more when bonded to the conductive polymer film, but is preferably bonded to the conductive polymer film. The total thickness when combined is 170 to 250μm (for example, if the thickness of the conductive polymer film is 100μm, the thickness of the protective film is 70μm).
0 to 150 μm) A light adhesive film with a standard adhesive strength of 5 to 209/25 m width is good. For example, a film made of polyethylene film coated with an acrylic adhesive, a film made of a polyethylene film coated with a synthetic rubber adhesive,
Polypropylene film coated with synthetic rubber adhesive, polyester film coated with acrylic adhesive, polyester film coated with synthetic rubber adhesive, coextruded film of polyethylene and adhesive, polyester film coated with synthetic rubber adhesive, Examples include coextruded films with adhesives.
これらの表面保護フィルムは片面に導電性膜を有する高
分子フィルムの導電性膜にマスクを設けた後或いは設け
る前にその反対面に全面的に貼る。These surface protection films are applied to the entire surface of a polymer film having a conductive film on one side, after or before a mask is provided on the conductive film on the opposite side.
マスクを設ける方法は常法を用いればよく特に限定され
ず、スクリーン印刷法でもフォトレジスト法でも良い。The method for providing the mask is not particularly limited, and may be any conventional method, and may be a screen printing method or a photoresist method.
又スクリーン印9;す法では、所定のパターンスクリー
ン版によりマスク剤を導電[生膜上にパターン通りに塗
布し、その俊エツチングすることにより、所定のパター
ンを形成すれば良い。In the screen marking method, a masking agent is coated onto the conductive living membrane according to the pattern using a predetermined pattern screen plate, and the predetermined pattern is formed by rapid etching.
またフォトレジスト法には塗布型とレジスト・フィルム
貼着型とがおるが、どちらの場合でもレジスト固有の方
法で露光、現像を行ない、その後エツチングすることに
より、所定のパターンを形成すれば良い。There are two types of photoresist methods: a coating type and a resist film sticking type. In either case, a predetermined pattern can be formed by exposing and developing using a method specific to the resist, and then etching.
貼り合せた総厚みが170μm以下では曲がり易く、2
50μm以上になると表面保護フィルムを引きはがす際
に、導電性フィルムが屈曲することになり、導電性膜に
亀裂が生じたりして好ましくない。If the total thickness of the bonded material is less than 170 μm, it will easily bend.
If the thickness exceeds 50 μm, the conductive film will be bent when the surface protection film is peeled off, which may cause cracks in the conductive film, which is not preferable.
(効 果)
本発明において、導電性高分子フィルムの導電性膜の反
対面に全面的に表面保護フィルムを貼り合せるので、二
本ローラーの間を通す等の簡単な方法で出来る。(Effects) In the present invention, since the surface protection film is entirely attached to the opposite side of the conductive film of the conductive polymer film, it can be done by a simple method such as passing it between two rollers.
表面保護フィルムを貼り合せ170μm以上にすること
により、比較的曲がりにククシているため、硬い基板上
に等に貼り合せること無く、ロ−クーコンベアー上を動
かしながらエツチング、洗浄などの処理を行うことが出
来る。また表面保護フィルムによって導電性高分子フィ
ルムに傷が着かずまた、液晶表示素子の透明度を損うこ
とも無く、乱反射により可視度が低下することも無い。By bonding the surface protection film to a thickness of 170 μm or more, it is relatively curved, so processing such as etching and cleaning can be performed while moving it on a low-speed conveyor without bonding it to a hard substrate. I can do it. Furthermore, the surface protection film does not damage the conductive polymer film, does not impair the transparency of the liquid crystal display element, and does not reduce visibility due to diffused reflection.
特に表面保護フィルムを全面的に貼り合せであるのでエ
ツチング液で汚れることがなく、洗浄も導電性膜側の片
面のみで良く簡略になる利点が有る。In particular, since the surface protection film is bonded over the entire surface, there is no possibility of staining with etching solution, and cleaning is simple and requires only one side, the conductive film side.
以下、本発明方法を実施例によって詳述する。Hereinafter, the method of the present invention will be explained in detail with reference to Examples.
実施例1゜
厚み100μmのポリエチレンテレフタレートフィルム
に表面抵抗が3000/口になるように、インジウム−
すず酸化物薄膜を蒸着した。このフィルムに水溶性処理
タイプ感光性フィルムレジスト(デュポン社製[リスト
ンJ3410)をラミネートし、その後感光性フィルム
レジストをラミネートした面と反対面の、ポリエチレン
テレフタレート面に厚み70μmの表面保護フィルム(
サンエール化学工業社製、[サニテクトJ PAC−3
)をラミネートした。このフィルムの感光性フィルムレ
ジスト部分を露光した後、ローラーコンベアー上を動か
しながら、希薄アルカリ水溶液で感光性フィルムレジス
トの非露光部分を溶解除去し、乾燥後25容伍%塩酸水
溶液(25°C)でエツチングした、その後1.5重量
%水酸化ナトリウム水溶液(25℃)でレジストを剥離
し、水洗、乾燥したところエツチングは達成された。し
かも、ポリエチレンテレフタレートフィルム面にラミネ
ートした表面保護フィルムを剥離したところ、インジウ
ム−すず酸化物薄膜を蒸着したポリエチレンテレフタレ
ートフィルムには傷、汚れが発生せずにパターンが形成
されていた。この様に形成された電極は表示品位に優れ
た表示電極として用いることが出来た。Example 1゜A polyethylene terephthalate film with a thickness of 100 μm was coated with indium so that the surface resistance was 3000/mm.
A thin film of tin oxide was deposited. This film was laminated with a water-soluble processed photosensitive film resist (Liston J3410, manufactured by DuPont), and then a 70 μm thick surface protection film (
Manufactured by Sunair Chemical Industry Co., Ltd., [Sanitect J PAC-3
) was laminated. After exposing the photosensitive film resist portion of this film, the unexposed portion of the photosensitive film resist was dissolved and removed with a dilute alkaline aqueous solution while moving on a roller conveyor, and after drying, the film was heated in a 25 vol.% aqueous hydrochloric acid solution (25°C). After that, the resist was removed with a 1.5% by weight aqueous sodium hydroxide solution (25°C), washed with water, and dried, and etching was completed. Moreover, when the surface protection film laminated on the surface of the polyethylene terephthalate film was peeled off, a pattern was formed on the polyethylene terephthalate film on which the indium-tin oxide thin film was deposited without any scratches or stains. The electrode formed in this manner could be used as a display electrode with excellent display quality.
比較例1゜
実施例1と同様にポリエチレンテレフタレートフィルム
に表面抵抗が300Ω/口のインジウム−すず酸化物薄
膜を蒸着した。これに実施例1と同じ感光性フィルムレ
ジストをラミネートし、露光した。その後ローラーコン
ベアー上を動かしながら希薄アルカリ水溶液で感光性フ
ィルムレジストの非露光部分を溶解除去し、乾燥後25
容量%塩酸水溶液(25°C)でエツチングした。その
後1.5重量%水酸化ナトリウム水溶液(525℃)で
レジストを剥離し、水洗、乾燥した。その結果、エツチ
ングは達成されパターンが形成されていたが、フィルム
に折れ、キズ、汚れが発生し、表示用電極としては用い
ることはできなかった。Comparative Example 1 In the same manner as in Example 1, an indium-tin oxide thin film having a surface resistance of 300 Ω/hole was deposited on a polyethylene terephthalate film. The same photosensitive film resist as in Example 1 was laminated thereon and exposed. After that, while moving on a roller conveyor, the unexposed parts of the photosensitive film resist were dissolved and removed with a dilute alkaline aqueous solution, and after drying,
Etching was performed with a vol.% aqueous hydrochloric acid solution (25°C). Thereafter, the resist was removed with a 1.5% by weight aqueous sodium hydroxide solution (525°C), washed with water, and dried. As a result, although etching was achieved and a pattern was formed, the film was bent, scratched, and stained, and could not be used as a display electrode.
Claims (1)
反対面に表面保護フィルムを貼り合せ、貼り合せたもの
の厚みを170μm以上にすることを特徴とする、導電
性フィルムのパターン加工法。A method for patterning a conductive film, the method comprising: laminating a surface protective film on the opposite side of the conductive film of a polymer film having a conductive film on one side, and making the thickness of the laminated product 170 μm or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14230386A JPS63488A (en) | 1986-06-18 | 1986-06-18 | Method for patterning electrically conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14230386A JPS63488A (en) | 1986-06-18 | 1986-06-18 | Method for patterning electrically conductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63488A true JPS63488A (en) | 1988-01-05 |
Family
ID=15312233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14230386A Pending JPS63488A (en) | 1986-06-18 | 1986-06-18 | Method for patterning electrically conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63488A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129930A (en) * | 1987-11-16 | 1989-05-23 | Daido Steel Co Ltd | Heat treatment furnace |
JP2002368071A (en) * | 2001-06-11 | 2002-12-20 | Ulvac Japan Ltd | Treatment board |
-
1986
- 1986-06-18 JP JP14230386A patent/JPS63488A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129930A (en) * | 1987-11-16 | 1989-05-23 | Daido Steel Co Ltd | Heat treatment furnace |
JP2002368071A (en) * | 2001-06-11 | 2002-12-20 | Ulvac Japan Ltd | Treatment board |
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