JPS6348434B2 - - Google Patents
Info
- Publication number
- JPS6348434B2 JPS6348434B2 JP3307883A JP3307883A JPS6348434B2 JP S6348434 B2 JPS6348434 B2 JP S6348434B2 JP 3307883 A JP3307883 A JP 3307883A JP 3307883 A JP3307883 A JP 3307883A JP S6348434 B2 JPS6348434 B2 JP S6348434B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- container
- brazing material
- external lead
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 238000005219 brazing Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
Description
【発明の詳細な説明】
本発明は半導体集積回路用セラミツク容器に関
し、特に金属外部リードの最終被覆にSn（錫）メ
ツキを施してなる半導体集積回路に使用する容器
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic container for a semiconductor integrated circuit, and more particularly to a container used for a semiconductor integrated circuit in which the final coating of a metal external lead is plated with Sn (tin).
Snは普通、金属の中では最も腐食の少ないも
のの一つであり、かつ半田付けがし易い金属であ
る。この為、近年、コストの高いAu（金）メツキ
に変わり、半導体集積回路用セラミツク容器の金
属外部リードの最終被覆にSnメツキが施される
様になつた。 Sn is usually one of the least corrosive metals and is the easiest to solder. For this reason, in recent years, Sn plating has been applied to the final coating of the metal external leads of ceramic containers for semiconductor integrated circuits, replacing the expensive Au (gold) plating.
従来より用いられていた容器構造で、金属外部
リードの最終被覆としてSnメツキを施してある
例を、第１図及び第２図の部分断面図に示す。 An example of a conventionally used container structure in which Sn plating is applied as the final coating to the metal external lead is shown in the partial cross-sectional views of FIGS. 1 and 2.
まず第１図の場合、セラミツク基体１にコバー
（Kovar）などの金属からなる外部リード５がメ
タライズ層２及びその上に施されたNiメツキ３
を介してAg−Cu（銀−銅）ロウ材４にてロウ付
けされており、ロウ材４及びコバー外部リード５
にはNi（ニツケル）メツキ７が施され、さらにそ
の上にSnメツキ６が施されている。この場合、
一般的には、Snメツキ６は、容器内に半導体素
子（図示していない）を組み込み、さらに気密封
止した後に行なわれる。 First, in the case of FIG. 1, an external lead 5 made of a metal such as Kovar is placed on a ceramic base 1 with a metallized layer 2 and a Ni plating 3 applied thereon.
It is brazed with Ag-Cu (silver-copper) brazing material 4 through the brazing material 4 and the outer lead 5.
is coated with Ni (Nickel) plating 7, and is further coated with Sn plating 6. in this case,
Generally, the Sn plating 6 is performed after a semiconductor element (not shown) is assembled in the container and the container is hermetically sealed.
次に第２図の場合は、セラミツク基体１にコバ
ー外部リード５がメタライズ層２及びその上に施
されたNiメツキ３を介してAg−Cuロウ材４にて
ロウ付けされており、ロウ材４及びコバー外部リ
ード５に直接Snメツキ６が施されている。この
場合も容器内に半導体素子を組み込み、さらに気
密封止した後にSnメツキ６が行なわれる。 Next, in the case of FIG. 2, a cover external lead 5 is brazed to a ceramic base 1 with an Ag-Cu brazing material 4 through a metallized layer 2 and a Ni plating 3 applied thereon. 4 and the outer outer lead 5 are directly coated with Sn plating 6. In this case as well, the Sn plating 6 is performed after the semiconductor element is assembled in the container and further hermetically sealed.
ところで以前より電気メツキによる被覆、特に
Snメツキ被覆上からは細い金属繊維、すなわち
ウイスカーが発生することが知られている。この
ウイスカーが成長した場合、外部リード端子間を
短絡させる危険があり、半導体集積回路用容器に
おいては重大な問題である。 By the way, coating by electroplating has been used for some time, especially
It is known that thin metal fibers, or whiskers, are generated from the Sn plating coating. If these whiskers grow, there is a risk of short-circuiting between external lead terminals, which is a serious problem in containers for semiconductor integrated circuits.
ウイスカー発生の原因はいろいろ考えられてい
るが、これまでのSnウイスカー発生の観察から、
Snメツキ内部又は素地金属材とSnメツキ間ある
いは素地金属内部に存在する内部応力（歪応力）
が、Snの移動現象を加速する様に考えられてい
る。この為、何らかの方法で内部歪を緩和させる
ような処置をとれば、Snウイスカーの発生を防
ぐことができると考えられる。 Various causes of whisker generation have been considered, but based on past observations of Sn whisker generation,
Internal stress (strain stress) existing inside the Sn plating, between the base metal material and the Sn plating, or inside the base metal
is thought to accelerate the Sn migration phenomenon. For this reason, it is thought that the generation of Sn whiskers can be prevented if measures are taken to alleviate the internal strain in some way.
実際の方法としては、Snメツキ後、容器を加
熱処理（たとえば200℃、N2（窒素）雰囲気で数
時間）することより、効果が得られる。しかし、
第１図、第２図で示した従来容器を用い、Snメ
ツキ後に熱処理を行なうと、別の特性面に悪影響
が出ることがわかつた。 As an actual method, the effect can be obtained by heat-treating the container (for example, at 200° C. for several hours in an N 2 (nitrogen) atmosphere) after Sn plating. but,
It has been found that when the conventional containers shown in FIGS. 1 and 2 are subjected to heat treatment after Sn plating, other characteristics are adversely affected.
すなわち、第１図の様に、コバー外部リード５
のコバー素地の上にNiメツキ７を施し、さらに
その上にSnメツキ６が施されている場合、前述
のような200℃程度の熱処理を行なうと、両メツ
キ金属Sn、Niがメツキ界面において相互拡散を
起こし、Ni3Sn4なる合金層ができる。この物質
は非常にもろい物質であり、Snメツキの密着力
を劣化させ、かつ外部リードに半田付けを行なつ
た場合、著しく半田ぬれ性を劣化させる。この
為、プリント板等に実装する際、良好な導通がと
れず、電気的特性面に悪影響を及ぼす。 That is, as shown in FIG.
When Ni plating 7 is applied on top of the edge base material, and Sn plating 6 is further applied on top of that, when heat treatment is performed at about 200℃ as described above, both the plating metals Sn and Ni will interact with each other at the plating interface. Diffusion occurs and an alloy layer of Ni 3 Sn 4 is formed. This substance is extremely brittle and deteriorates the adhesion of Sn plating, and also significantly deteriorates solder wettability when soldering to external leads. For this reason, when mounted on a printed board or the like, good conduction cannot be achieved, which adversely affects electrical characteristics.
一方、第２図の様に、コバー外部リード５のコ
バー素地の上に直接Snメツキ６を施している場
合は、Snメツキ後の熱処理により、第１図の場
合の様に、Snメツキの密着力が劣化したり、半
田ぬれ性が劣化するということはない。ところ
が、コバー外部リード及びAg−Cuロウ材表面に
Niメツキが施されていないためウイスカー発生
を押さえる手段がなくなり、ロウ材として使用し
ているAg−Cu共晶合金自身のウイスカーが発生
し易いという欠点を有する。また、さらにNiメ
ツキのない構造であると、Snメツキを施す場合、
一般に酸性のSnメツキ浴を使用するため、Ag−
Cuロウ材が著しく侵され易いという欠点を有す
る。 On the other hand, as shown in Fig. 2, when the Sn plating 6 is applied directly on the cover material of the cover external lead 5, the heat treatment after the Sn plating allows the Sn plating to adhere tightly, as in the case of Fig. 1. There is no deterioration in strength or solderability. However, on the surface of the outer lead and Ag-Cu brazing material,
Since there is no Ni plating, there is no means to suppress the generation of whiskers, and the Ag-Cu eutectic alloy used as the brazing material has the disadvantage of easily generating whiskers. Furthermore, if the structure does not have Ni plating, if Sn plating is applied,
Since an acidic Sn plating bath is generally used, Ag−
The disadvantage is that the Cu brazing material is extremely susceptible to corrosion.
本発明は、第１図、第２図に示すような従来容
器の欠点を除き、Snメツキ後にウイスカー防止
の熱処理を問題なく行なうことができる容器を提
供することを目的とする。 An object of the present invention is to provide a container that can be heat-treated to prevent whiskers after Sn plating without any problems, without the drawbacks of conventional containers as shown in FIGS. 1 and 2.
本発明の特徴は、セラミツク基体のメタライズ
層に金属外物リードがロウ材でロウ付けされた半
導体集積回路用容器において、このロウ材表面に
はニツケルとスズとを含む金属層が設けられ、金
属外部リードのロウ付け部分を除く部分にはスズ
を含みニツケルを含まない金属層が設けられてい
る半導体集積回路用容器にある。 A feature of the present invention is that in a container for a semiconductor integrated circuit in which external metal leads are brazed to a metallized layer of a ceramic substrate with a brazing material, a metal layer containing nickel and tin is provided on the surface of the brazing material. There is a case for a semiconductor integrated circuit in which a metal layer containing tin and not containing nickel is provided in a portion other than a brazed portion of an external lead.
第３図に、本発明に基づく容器の一例を部分断
面図で示す。即ち、コバーなどの金属からなる外
部リード５がセラミツク基体１にメタライズ層２
及びその上に施されたNiメツキ３を介してAg−
Cuロウ材４にてロウ付けされており、ロウ付け
部のロウ材表面並びにコバー外部リード５の実装
の際半田付けを必要としないロウ付け部５′のみ
にNiメツキ７′が施してある。この部分メツキの
方法としては、マスクを用いたり、必要な部分だ
けメツキ浴に浸す等の公知の技術を利用すること
ができる。さらにその後、前記Niメツク７′上並
びにコバー外部リード５の露出した素地上にSn
メツキ６が施された構造となつている。この場合
Snメツキ６は、一般的には容器内に半導体素子
を組み込み気密封止した後に行なわれる。 FIG. 3 shows, in partial cross-section, an example of a container according to the invention. That is, an external lead 5 made of metal such as Covar is attached to a metallized layer 2 on a ceramic base 1.
and Ag− through Ni plating 3 applied thereon.
It is brazed with Cu brazing material 4, and Ni plating 7' is applied only to the brazing material surface of the brazing part and to the brazing part 5' which does not require soldering when mounting the outer lead 5. As a method for this partial plating, known techniques such as using a mask or dipping only the necessary portions in a plating bath can be used. Furthermore, after that, Sn
It has a structure with a 6-metal plate. in this case
Sn plating 6 is generally performed after the semiconductor element is installed in the container and hermetically sealed.
このように、コバー外部リード５のロウ付に用
いたAg−Cuロウ材４の表面には予めNiメツキ
７′がなされ、且つコバー外部リード５のうち少
なくともロウ付け部５′を除く部分にはNiメツキ
がなされていない構造であれば、Snメツキ後、
Snウイスカー発生を防ぐ為の加熱処理により、
実装の際の半田ぬれ性が劣化することもなく、ま
た、Ag−Cuロウ材からのウイスカー発生に対し
ても抵抗力があるという利点を有する。またさら
に、酸性のSnメツキ浴を使用した場合でも、Ag
−Cuロウ材が侵されることがないという利点を
有する。 In this way, Ni plating 7' is applied in advance to the surface of the Ag-Cu brazing material 4 used for brazing the outer outer lead 5, and at least the portion of the outer outer lead 5 excluding the brazed portion 5' is coated with Ni plating 7'. If the structure does not have Ni plating, after Sn plating,
By heat treatment to prevent the generation of Sn whiskers,
It has the advantage that solder wettability during mounting does not deteriorate, and it is resistant to whisker generation from the Ag-Cu brazing material. Furthermore, even when using an acidic Sn plating bath, Ag
- It has the advantage that the Cu brazing material is not attacked.
第１図、第２図は従来容器を説明する部分断面
図、第３図は本発明実施例の容器を説明する部分
断面図である。
なお図において、１……セラミツク基体、２…
…メタライズ層、３……Niメツキ、４……Ag−
Cuロウ材、５……コバー外部リード、６……Sn
メツキ、７，７′……Niメツキ、である。
FIGS. 1 and 2 are partial sectional views illustrating a conventional container, and FIG. 3 is a partial sectional view illustrating a container according to an embodiment of the present invention. In the figure, 1...ceramic substrate, 2...
...metalized layer, 3...Ni plating, 4...Ag-
Cu brazing material, 5...Covar external lead, 6...Sn
Metsuki, 7,7'... Ni Metsuki.
Claims (1)
ードがロウ材でロウ付けされ、前記金属外部リー
ドの表面全体にスズメツキが施されている半導体
集積回路用容器において、前記金属外部リードの
ロウ付け部分のスズメツキの下層部にニツケルメ
ツキ層を有することを特徴とする半導体集積回路
用容器。1. In a container for a semiconductor integrated circuit, in which a metal external lead is brazed to a metallized layer of a ceramic substrate with a brazing material, and the entire surface of the metal external lead is tinned, the brazed portion of the metal external lead is tin-plated. A container for a semiconductor integrated circuit, characterized by having a nickel plating layer in the lower layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3307883A JPS58161353A (en) | 1983-03-01 | 1983-03-01 | Container for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3307883A JPS58161353A (en) | 1983-03-01 | 1983-03-01 | Container for semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58161353A JPS58161353A (en) | 1983-09-24 |
| JPS6348434B2 true JPS6348434B2 (en) | 1988-09-29 |
Family
ID=12376669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3307883A Granted JPS58161353A (en) | 1983-03-01 | 1983-03-01 | Container for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161353A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220146433A (en) | 2020-02-25 | 2022-11-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | silicone adhesive composition |
-
1983
- 1983-03-01 JP JP3307883A patent/JPS58161353A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220146433A (en) | 2020-02-25 | 2022-11-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | silicone adhesive composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58161353A (en) | 1983-09-24 |
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