JPS6346738A - Bonding wire for semiconductor element and manufacture thereof - Google Patents

Bonding wire for semiconductor element and manufacture thereof

Info

Publication number
JPS6346738A
JPS6346738A JP61190838A JP19083886A JPS6346738A JP S6346738 A JPS6346738 A JP S6346738A JP 61190838 A JP61190838 A JP 61190838A JP 19083886 A JP19083886 A JP 19083886A JP S6346738 A JPS6346738 A JP S6346738A
Authority
JP
Japan
Prior art keywords
gold
copper
wire
billet
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61190838A
Other languages
Japanese (ja)
Inventor
Tomiharu Matsushita
富春 松下
Shigeo Hattori
重夫 服部
Akiyasu Morita
森田　章靖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP61190838A priority Critical patent/JPS6346738A/en
Publication of JPS6346738A publication Critical patent/JPS6346738A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/431—Pre-treatment of the preform connector
    • H01L2224/4312—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve adhesive properties onto an aluminum evaporating layer at low cost while reducing deterioration with time of a joint surface, and to facilitate molding on manufacture by coating the outer circumference of a copper conductor with gold. CONSTITUTION:A gold blank material 2 is filled along the whole circumference of the inner wall of a cylindrical body (a skin metal) 1, the inside of which has a cavity section and one end in the longitudinal direction of which is opened and which is made of copper, and a copper bar material 3 into the internal space of the gold blank material 2 respectively, and the opening section of an end section in the longitudinal direction is closed by a cover body 4 made of copper, thus forming a composite billet. Deaeration must be conducted from a vent 6 so that air is not sealed into the billet at that time. A welding section 5 is welded. The billet is heated, and hot hydrostatic- extruded by using a visco-plastic pressure medium, thus acquiring a composite wire rod. The wire rod is drawn by cold drawing, and dipped in a concentrated sulfuric acid solution, thus dissolving and removing copper on the outer circumferential surface of gold, then obtaining a composite wire, the outside of which consists of gold 2' and the inside of which is composed of pure copper 3'.

Description

【発明の詳細な説明】 ［産業上の利用分野コ 本発明は金及び銅（銅合金を含む、以下間じじ）の複合
金属からなる半導体素子用ボンディングワイヤ及びその
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a bonding wire for semiconductor devices made of a composite metal of gold and copper (including copper alloys, hereinafter referred to as "majiji"), and a method for manufacturing the same.

［従来の技術］ 半導体素子のチップ電極であるアルミニウム蒸着パッド
を、外部リードに連うなるリードフレーム或はケースの
接続部に接続するに当たってはボンディングワイヤが使
用される。ボンディングワイヤの要求特性としては ０表面に接合を阻害するような厚い酸化被膜が形成され
ていない。[Prior Art] Bonding wires are used to connect aluminum vapor-deposited pads, which are chip electrodes of semiconductor devices, to connection parts of lead frames or cases that are connected to external leads. The required characteristics of the bonding wire are that there is no thick oxide film formed on the surface that would inhibit bonding.

■適当なのび及び引張り強度をもりている。■Has appropriate elongation and tensile strength.

■アルミニウム蒸着パッドとの接合性が良い。■Good bonding with aluminum vapor deposited pads.

この様な要件を全て満たすものとして汎用されているの
は金ワイヤであるが、この他アルミニウム合金ワイヤや
銅ワイヤも存在する。Gold wire is widely used as a wire that satisfies all of these requirements, but aluminum alloy wire and copper wire also exist.

［発明が解決しようとする問題点コ しかしながらこれら従来のボンディングワイヤには次の
様な問題点がある。[Problems to be Solved by the Invention] However, these conventional bonding wires have the following problems.

金地金が他の金属材料に比べて高価である為金のボンデ
ィングワイヤはコストが高くなる。また金ワイヤとアル
ミニウム蒸着パッドの接合部における相互拡散速度が速
いので接合界面にＡｕ−ＡＩ系金金属間化合物形成され
易く接合性は必らずしも十分でない。Gold bonding wires are expensive because gold bullion is more expensive than other metal materials. Furthermore, since the interdiffusion rate at the joint between the gold wire and the aluminum vapor-deposited pad is high, an Au-AI gold intermetallic compound is likely to be formed at the joint interface, so that the bonding performance is not necessarily sufficient.

これに対し銅ワイヤはアルミニウム蒸着パッドの接合部
における相互拡散速度がきわめてゆるやかであるため接
合性は金ワイヤの場合はどは劣化しないものの元々耐食
性において不十分である。On the other hand, copper wire has an extremely slow rate of interdiffusion at the bonding portion of the aluminum vapor deposited pad, so although the bonding properties do not deteriorate as much as gold wire does, corrosion resistance is inherently insufficient.

アルミニウム合金ワイヤは銅ワイヤと同じく耐食性が弱
くさらにアルミニウム蒸着パッドとの接合に際して必要
であるボール（ワイヤ先端の溶融に基づく球状溶融金属
）の形成が不十分でありボールボンディング作業が容易
でない。Aluminum alloy wire, like copper wire, has low corrosion resistance, and furthermore, the formation of a ball (spherical molten metal based on melting of the tip of the wire) necessary for bonding to an aluminum vapor-deposited pad is insufficient, making ball bonding work difficult.

本発明はこの様な事情に鑑みてなされたものであって、
安価で、アルミニウム蒸着層への接合性が良いと共に接
合面の経時的劣化が少なく、製造上も成形が容易である
様な半導体素子用ボンディングワイヤ及びその製造方法
を提供することを目的とするものである。The present invention was made in view of these circumstances, and
The object of the present invention is to provide a bonding wire for a semiconductor element that is inexpensive, has good bondability to an aluminum vapor deposited layer, has little deterioration of the bonding surface over time, and is easy to form in terms of manufacturing, and a method for manufacturing the same. It is.

［問題点を解決するための手段］ 本発明で提供される半導体素子用ボンディングワイヤは
銅芯線の外周を金で被覆したものであって、またその製
造方法は銅棒材の外周を金で被覆し、更にこれを金を侵
さずに溶解可能な外皮金属で被覆してなる複合金属素材
を線材に成形した後、前記外皮金属を溶解除去する工程
を含むことを要旨とするものである。[Means for Solving the Problems] The bonding wire for semiconductor devices provided by the present invention is made by coating the outer periphery of a copper core wire with gold, and the method for manufacturing the same includes coating the outer periphery of a copper bar material with gold. The method further includes the step of forming a composite metal material into a wire by coating the composite metal material with a sheath metal that can be dissolved without corroding the gold, and then dissolving and removing the sheath metal.

［作用コ 本発明のボンディングワイヤは銅芯線の外周を金で被覆
することにより銅と金の複合ワイヤとして構成されるの
であるから、各々の金属が有する欠点を各々他の金属が
有する長所で補うものである。即ち銅は前記したボンデ
ィングワイヤの要求特性に関しては、耐食性にも欠ける
のであるが、他方金が耐食性に関して極めてすぐれた性
質を有するから、銅を金で被覆することによって耐食性
が改善されることとなる。[Operation] Since the bonding wire of the present invention is constructed as a composite wire of copper and gold by coating the outer periphery of the copper core wire with gold, the disadvantages of each metal are compensated for by the advantages of the other metal. It is something. In other words, copper lacks corrosion resistance in terms of the characteristics required for bonding wires as described above, but on the other hand, gold has extremely excellent corrosion resistance properties, so coating copper with gold improves corrosion resistance. .

一方アルミニウム蒸着パッドの接合部における金属の接
合性に関しては前記の様に接合部の金属層が劣化し易い
という金の欠点を接合性のすぐれた銅の長所で補うので
ある。しかも両金属の融点は金が１０６４℃、銅が１０
８４．５℃であって非常に近接しているから金と銅は融
解にあってはほぼ同時に融解し、融解むらを生じない。On the other hand, regarding the bondability of the metal at the bonding portion of the aluminum vapor deposited pad, as mentioned above, the disadvantage of gold that the metal layer at the bonding portion easily deteriorates is compensated for by the advantage of copper, which has excellent bondability. Furthermore, the melting points of both metals are 1064°C for gold and 10°C for copper.
Since the temperature is 84.5° C. and they are very close to each other, gold and copper melt almost simultaneously, and there is no uneven melting.

そしてワイヤ先端の溶融に基づく球状溶融金属であるボ
ールの形成は、金のみならず銅もきわめてすぐれている
から金と銅の混合溶融金属はボールの形成にすぐれ接着
性が良好なものとなる。ボンディングワイヤの製造にあ
たっては、伸線工程による異物混入がその製品価値に大
きく影響する為、素材をシェービングして異物を除去し
た後、クリーンルームにて厳密に異物混入に対して管理
された工場にて生産される。Since not only gold but also copper is excellent in forming a ball, which is a spherical molten metal, by melting the tip of a wire, a mixed molten metal of gold and copper is excellent in forming a ball and has good adhesion. When manufacturing bonding wire, the contamination of foreign matter during the wire drawing process greatly affects the product value, so after shaving the material to remove foreign matter, it is processed in a clean room at a factory that is strictly controlled to prevent contamination. produced.

その為、クリーンルーム設置及び維持に対する費用もコ
ストの増加に対する一要因をなしている。従って可能な
限りクリーンルームにおける作業を回避できる工程が好
ましい。そこで本発明においては金の外側をさらに金を
侵さずに溶解可能な金属で被覆し、伸線加工後にこの金
属（以下外皮金属という）のみを除去することとしたも
のである。外皮金属は本発明を限定するものではないが
Ｃｕ、Ａｇ、Ｃａ、Ｆｅ、ＡＩ、Ｚｎ、Ｎｉ或はこれら
の合金等が例示される。Therefore, the cost of installing and maintaining a clean room is also a factor in increasing costs. Therefore, a process that can avoid work in a clean room as much as possible is preferable. Therefore, in the present invention, the outside of the gold is further coated with a metal that can be melted without corroding the gold, and only this metal (hereinafter referred to as the "sheath metal") is removed after wire drawing. Although the present invention is not limited to the outer skin metal, examples thereof include Cu, Ag, Ca, Fe, AI, Zn, Ni, and alloys thereof.

外皮金属の溶解溶液は金を侵食することのないものであ
ればよく、外皮金属の種別により異なるが一般的には酸
若しくはアルカリが使用される。The solution for dissolving the sheath metal may be any solution that does not corrode the gold, and generally an acid or alkali is used, although it differs depending on the type of the sheath metal.

たとえば外皮金属が銅の場合は溶解溶液としては濃硫酸
、硝酸、アンモニア水が例示される。For example, when the outer metal is copper, examples of the dissolving solution include concentrated sulfuric acid, nitric acid, and aqueous ammonia.

［実施例］ 実施例１ 第１図は本発明に係るボンディングワイヤの製造方法を
実施するための複合ビレットを示す断面図である。図に
おいて内部に空洞部を有し、長手方向の一端が開放され
ている銅製筒体（外皮金属）１の内壁全周に沿フて金素
材２を、更に金素材２の内部空間に銅棒材３をそれぞれ
充填し、長手方向の端部開放部を銅製蓋体４で閉鎖して
複合ビレットを形成する。この場合ビレットの内部に空
気が封入されることがない様に脱気孔６より脱気を行な
うことが必要である。しかる後に溶接部５を溶接する。[Example] Example 1 FIG. 1 is a sectional view showing a composite billet for carrying out the method for manufacturing a bonding wire according to the present invention. In the figure, a gold material 2 is placed along the entire inner wall of a copper cylindrical body (sheath metal) 1 which has a hollow portion inside and is open at one end in the longitudinal direction, and a copper rod is further placed in the inner space of the gold material 2. The billets 3 are each filled, and the longitudinal end openings are closed with copper caps 4 to form a composite billet. In this case, it is necessary to perform deaeration through the deaeration holes 6 so that air is not trapped inside the billet. After that, the welded portion 5 is welded.

第２図は第１図のＩＩ　−ＩＩＩ断面図である。FIG. 2 is a sectional view taken along line II-III in FIG. 1.

筒体１の銅の純度は９９，５％、外径５０ｍｍ、長さ１
７０ｍｍ、金素材２の純度は９９．９９％、外径３０ｍ
ｍ、内径２１　ｍｍ、長さ１００　ｍ！ｎ、また銅棒材
３の純度！１９．９９％、外径２０．９５　ｍｍとした
。The purity of the copper in cylinder 1 is 99.5%, the outer diameter is 50 mm, and the length is 1.
70mm, purity of gold material 2 is 99.99%, outer diameter 30m
m, inner diameter 21 mm, length 100 m! n, also the purity of copper bar material 3! 19.99% and an outer diameter of 20.95 mm.

このビレットを７００℃に加熱し結盟性圧力媒体を用い
た熱間静水圧押出しを行ない、外径５ｍｍの複合線材を
得た。この線材を冷間引抜きにより外径０．１ｍｍまで
伸線した後濃硫酸溶液に浸漬することによって舎外周面
の銅を溶解除去し、第３図に示す様に外側が金で内側が
純銅の複合線を得た。２゛は金、３°は純銅である。外
径は６０〜６２μｍすであった。この線材を芯径２０ｍ
ｍφのボビンに巻きつけ、内径５０ｍｍｐの高圧容器で
冷間静水圧押出し、引抜きにより３８μｍすに加工した
。加工圧力は５０００　ｋｇ／　Ｃｏｔ２であった。更
にこれをボビンに巻きつけ圧力４５００　ｋｇ／　Ｃｍ
２で冷間静水圧押出し・引抜きを行ない２５μｍ≠の細
線に加工した。This billet was heated to 700°C and subjected to hot isostatic extrusion using an associative pressure medium to obtain a composite wire with an outer diameter of 5 mm. This wire was drawn to an outer diameter of 0.1 mm by cold drawing, and then immersed in a concentrated sulfuric acid solution to dissolve and remove the copper on the outer surface of the building.As shown in Figure 3, the outside was gold and the inside was pure copper. I got a compound line. 2° is gold and 3° is pure copper. The outer diameter was 60-62 μm. This wire has a core diameter of 20m.
It was wound around a bobbin of mφ, cold isostatically extruded in a high-pressure container with an inner diameter of 50 mm, and processed to a thickness of 38 μm by drawing. The processing pressure was 5000 kg/Cot2. Furthermore, this is wound around a bobbin and the pressure is 4500 kg/cm.
In step 2, cold isostatic extrusion and drawing were performed to form a fine wire of 25 μm≠.

尚上記の方法は本発明の一具体例にすぎない。Note that the above method is only one specific example of the present invention.

従って伸線加工方法は上記の方法に限定されるものでは
ないが、銅と金の複合比を一定に維持し、ワイヤ表面の
滑らかさを保持するためには静水圧押出し・引抜加工に
よるのが望ましい。Therefore, the wire drawing method is not limited to the above method, but in order to maintain a constant composite ratio of copper and gold and maintain the smoothness of the wire surface, hydrostatic extrusion and drawing are recommended. desirable.

実施例２ 金及び銅の純度及び製造方法は実施例１の場合と同じと
して、金外径３０ｍｍφ、胴径２５ｍｍφの複合材を伸
線加工して２５μｍψの極細線ワイヤを得た。Example 2 The purity of gold and copper and the manufacturing method were the same as in Example 1, and a composite material with a gold outer diameter of 30 mmφ and a body diameter of 25 mmφ was wire-drawn to obtain an ultrafine wire of 25 μmφ.

実施例３ 胴径１５ｍｍφとして他の条件は実施例２と同じとし、
伸線加工により２５μｍすの極細線ワイヤを得た。Example 3 The body diameter was 15 mmφ, other conditions were the same as in Example 2,
An ultrafine wire of 25 μm was obtained by wire drawing.

実施例４ 胴径１０ｍｍφとして他の条件は実施例２と同じとし、
２５μｍすの極細線ワイヤを得た。Example 4 The other conditions were the same as Example 2, with a trunk diameter of 10 mmφ,
An ultrafine wire of 25 μm was obtained.

以上実施例１〜４のいずれの場合においても金と銅の複
合比が一定で表面が非常に滑らかなワイヤが得られた。In all of Examples 1 to 4, wires with a constant composite ratio of gold and copper and a very smooth surface were obtained.

［発明の効果］ 本発明は上記の様に構成されるから下記の効果を有する
。[Effects of the Invention] Since the present invention is configured as described above, it has the following effects.

（１）ワイヤ芯材として銅を使用するので金地金の使用
量を低減させることができ素材比のコストを抑制するこ
とができる。(1) Since copper is used as the wire core material, the amount of gold bullion used can be reduced, and the cost relative to the material ratio can be suppressed.

（２）金と純銅の複合材よりなるのであるから導体とし
ての特性は金線と遜色ないワイヤとなる。(2) Since the wire is made of a composite material of gold and pure copper, its conductor properties are comparable to those of gold wire.

（３）融点が近似した金と純銅の複合材よりなるのであ
るから融解接着に際し均一融解がされる。(3) Since it is made of a composite material of gold and pure copper that have similar melting points, uniform melting occurs during melt bonding.

従って加工性にすぐれた金と、接合部における拡散速度
が遅く接合性がすぐれ経時劣化の少ない銅の特性を併せ
もったワイヤとなる。Therefore, the wire has the characteristics of gold, which has excellent workability, and copper, which has a slow diffusion rate at the joint, has excellent bonding properties, and has little deterioration over time.

（４）ワイヤの外側が金であるから銅の欠点である耐食
性をカバーすることができる。(4) Since the outside of the wire is made of gold, the corrosion resistance, which is a drawback of copper, can be overcome.

（５）軟化温度が相互に異なる金と銅の配合比を変更す
ることにより硬質、軟質、半硬質と種々のボンディング
ワイヤを製造することができるので多様な強度特性に対
処できる。(5) Various bonding wires such as hard, soft, and semi-hard can be manufactured by changing the blending ratio of gold and copper, which have mutually different softening temperatures, so that various strength characteristics can be handled.

（６）ワイヤの製造に際し金の外面を金属で被覆してい
るから伸線加工が非常に容易であり加工に際し金表面に
異物が侵入し或は汚染されるおそれかない。(6) Since the outer surface of the gold is coated with metal when manufacturing the wire, wire drawing is very easy, and there is no risk of foreign matter entering the gold surface or contaminating it during processing.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例における複合ビレットの断面図
、第２図は第１図のＩＩ　−ＩＩ線断面図、第３図は本
発明の実施例におけるボンデインワイヤの断面図である
。 ｌ・・・筒体　　　　　　２・・・金素材３・・・銅棒
材FIG. 1 is a cross-sectional view of a composite billet in an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line II--II in FIG. 1, and FIG. 3 is a cross-sectional view of a bond-in wire in an embodiment of the present invention. l...Cylinder body 2...Gold material 3...Copper bar material

Claims (2)

【特許請求の範囲】[Claims] （１）銅または銅合金線の外周を金で被覆したことを特
徴とする半導体素子用ボンディングワイヤ。(1) A bonding wire for semiconductor devices, characterized in that the outer periphery of a copper or copper alloy wire is coated with gold. （２）銅または銅合金棒材の外周を金で被覆し、溶解可
能な外皮金属で被覆してなる複合金属素材を線材に成形
した後、金を侵食することなく前記外皮金属のみを溶解
除去する工程を含むことを特徴とする半導体素子用ボン
ディングワイヤの製造方法。(2) After forming a composite metal material consisting of a copper or copper alloy bar coated with gold on its outer periphery and covered with a meltable outer shell metal into a wire rod, only the outer shell metal is dissolved and removed without corroding the gold. A method for manufacturing a bonding wire for a semiconductor device, the method comprising the step of:
JP61190838A 1986-08-14 1986-08-14 Bonding wire for semiconductor element and manufacture thereof Pending JPS6346738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61190838A JPS6346738A (en) 1986-08-14 1986-08-14 Bonding wire for semiconductor element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61190838A JPS6346738A (en) 1986-08-14 1986-08-14 Bonding wire for semiconductor element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6346738A true JPS6346738A (en) 1988-02-27

Family

ID=16264607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61190838A Pending JPS6346738A (en) 1986-08-14 1986-08-14 Bonding wire for semiconductor element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6346738A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252118A (en) * 1988-08-16 1990-02-21 Sumitomo Metal Ind Ltd Manufacture of composite wire rod having extra fine diameter
WO2003081661A1 (en) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Bonding wire and integrated circuit device using the same
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
WO2013129253A1 (en) * 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 Power semiconductor device, method for manufacturing same, and bonding wire

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252118A (en) * 1988-08-16 1990-02-21 Sumitomo Metal Ind Ltd Manufacture of composite wire rod having extra fine diameter
JPH0530524B2 (en) * 1988-08-16 1993-05-10 Sumitomo Metal Ind
WO2003081661A1 (en) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Bonding wire and integrated circuit device using the same
CN100359657C (en) * 2002-03-26 2008-01-02 株式会社野毛电气工业 Bonding wire and an integrated circuit device using the same
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
KR20120035093A (en) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 Bonding wire for semiconductor
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
WO2013129253A1 (en) * 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 Power semiconductor device, method for manufacturing same, and bonding wire
JP5728126B2 (en) * 2012-02-27 2015-06-03 日鉄住金マイクロメタル株式会社 Power semiconductor device, manufacturing method thereof, and bonding wire
US9059003B2 (en) 2012-02-27 2015-06-16 Nippon Micrometal Corporation Power semiconductor device, method of manufacturing the device and bonding wire

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