JPH04206646A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPH04206646A JPH04206646A JP2329992A JP32999290A JPH04206646A JP H04206646 A JPH04206646 A JP H04206646A JP 2329992 A JP2329992 A JP 2329992A JP 32999290 A JP32999290 A JP 32999290A JP H04206646 A JPH04206646 A JP H04206646A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- core material
- gold
- bonding
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011162 core material Substances 0.000 claims abstract description 28
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 12
- 239000003353 gold alloy Substances 0.000 claims abstract description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011777 magnesium Substances 0.000 claims abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 9
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- 238000005491 wire drawing Methods 0.000 abstract description 6
- 230000007935 neutral effect Effects 0.000 abstract description 2
- 238000005096 rolling process Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001192 hot extrusion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体素子上の電極と外部リードとを接続す
るために用いるボンディングワイヤー、特に多ピン半導
体デバイスに好適なボンディングワイヤーに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bonding wire used to connect an electrode on a semiconductor element and an external lead, particularly a bonding wire suitable for a multi-pin semiconductor device.
ＩＣ，ＬＳＩなどの半導体素子の電極と外部リードとを
接続するための０．０１５〜０．１ｆｉの範囲の直径を
有するボンディングワイヤーが用いられている。ボンデ
ィングワイヤーには、
（１）大気中もしくは１０％程度の水素ガスを含む窒素
気流中でワイヤーの先端を加熱溶融した場合、酸化被膜
の無い真球状のボールが形成される、（２）超音波熱圧
着方式によるボンディングを行った場合、ボンディング
ワイヤーと外部リードとの間で、それぞれ良好な接合状
態が得られる、（３）樹脂封入を行なった場合に、隣合
うポンディングワイヤー同志の接触が起こらない、すな
わち樹脂の流動抵抗によってボンディングワイヤーが変
形しにくい、
（４）長期間保存した場合にも、ボンディングワイヤー
と半導体素子の電極及びボンディングワイヤーと外部リ
ードとの間の接合が劣化しない、等の特性が要求される
。そのためボンディングワイヤーとして、従来は純度９
９．９９重量％以上の高純度の金または銅の地金に０．
０１％未満の微量な合金元素を添加した線材が用いられ
てきた。Bonding wires having a diameter in the range of 0.015 to 0.1 fi are used to connect electrodes of semiconductor devices such as ICs and LSIs to external leads. Bonding wire has the following properties: (1) When the tip of the wire is heated and melted in the air or in a nitrogen stream containing about 10% hydrogen gas, a perfectly spherical ball with no oxide film is formed. (2) Ultrasonic When bonding is performed using the thermocompression bonding method, a good bonding state can be obtained between the bonding wire and the external lead. (3) When resin encapsulation is performed, contact between adjacent bonding wires does not occur. (4) The bonding between the bonding wire and the electrode of the semiconductor element and between the bonding wire and the external lead will not deteriorate even when stored for a long time. characteristics are required. For this reason, bonding wires used to have a purity of 9
0.0% to high purity gold or copper base metal of 9.99% by weight or more.
Wire rods to which trace amounts of alloying elements of less than 0.01% have been added have been used.
しかしながら近年、半導体デバイスの多ビン化に伴いボ
ンディングワイヤー間隔の狭ピンチ化及びボンディング
距離の長距離化が進行してきており、そのため従来のボ
ンディングワイヤーでは樹脂封入する時に、樹脂の流動
抵抗によりボンディングワイヤーが変形し、ボンディン
グワイヤー同志の接触による不良が頻発化し、半導体デ
バイス製造上の大きな問題となってきている。However, in recent years, with the increase in the number of semiconductor devices, the gap between bonding wires has become narrower and the bonding distance has become longer.As a result, when conventional bonding wires are encapsulated in resin, the bonding wires tend to bend due to the flow resistance of the resin. Deformation occurs frequently, and defects due to contact between bonding wires occur frequently, which has become a major problem in semiconductor device manufacturing.
従来、銅または銅合金線の外周を金で被覆した半導体素
子用ボンディングワイヤーが提案されている（例えば、
特開昭６３−４６７３８号公報）。Conventionally, bonding wires for semiconductor devices have been proposed in which the outer periphery of a copper or copper alloy wire is coated with gold (for example,
JP-A-63-46738).
しかし、このボンディングワイヤーは、半導体素子を樹
脂封入する際にボンディングワイヤー同志の接触による
不良が起りにくいほどの強度を有していない欠点が有っ
た。However, this bonding wire has a drawback that it does not have enough strength to prevent defects due to contact between bonding wires when a semiconductor element is encapsulated in resin.
本発明の目的は、半導体素子を樹脂封入する際にボンデ
ィングワイヤー同志の接触による不良が起りに＜＜、多
ピン半導体デバイス用として好適なボンディングワイヤ
ーを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a bonding wire suitable for use in multi-pin semiconductor devices, since defects may occur due to contact between bonding wires when semiconductor elements are encapsulated in resin.
上記の目的を達成する為に、本発明のボンディングワイ
ヤーは、
（１）銅合金の芯材を有し、その外側が金もしくは金合
金からなるボンディングワイヤーであって、その銅合金
の芯材の直径がボンディングワイヤーの直径の１０％以
上、８０％以下である点に特徴があり、
（２）銅合金の芯材を有し、その外側が金もしくは金合
金からなるボンディングワイヤーであって、銅合金の芯
材が銀０．１〜５重量％、残部銅及び不可避不純物から
なる点に特徴があり、
（３）銅合金の芯材を有し、その外側が金もしくは金合
金からなるボンディングワイヤーであって、銅合金の芯
材がジルコニウム０．０１〜０．２重１％、クロム０．
０５〜０．３重量％、マグネシウム０．Ｏ１〜０．３重
量％のうち少くとも１種以上を含み、残部銅及び不可避
不純物からなる組成を有する点に特徴がある。In order to achieve the above object, the bonding wire of the present invention has the following features: (1) A bonding wire having a core material of copper alloy, the outer surface of which is made of gold or a gold alloy, and the bonding wire has a core material of copper alloy. It is characterized in that the diameter is 10% or more and 80% or less of the diameter of the bonding wire. It is characterized in that the core material of the alloy consists of 0.1 to 5% by weight of silver, the balance being copper and unavoidable impurities. The core material of the copper alloy contains 0.01 to 0.2% zirconium and 0.1% chromium.
05-0.3% by weight, magnesium 0. It is characterized in that it has a composition containing at least one type from 1 to 0.3% by weight of O, with the balance consisting of copper and unavoidable impurities.
（作用〕
本発明において、銅合金の芯材を有し、その外側が金も
しくは金合金からなるのは、芯材として高強度な銅合金
線を用いてボンディングワイヤーの強度を向上させると
共に芯材の周囲に従来よりボンディングワイヤーとして
用いられてきたと同様の金もしくは金合金を存在させる
ことによって、酸化被膜の無い真球状のボールを形成し
たり外部リードとの間で良好な接合状態を得る等のボン
ディングワイヤーに要求される特性を満足させながら、
樹脂封入時の樹脂の流動抵抗によるボンディングワイヤ
ーの変形によりボンディングワイヤー同志が接触するの
を防止するためである。(Function) In the present invention, the reason why the core material is made of copper alloy and the outside is made of gold or gold alloy is that the strength of the bonding wire is improved by using a high-strength copper alloy wire as the core material, and the core material is made of gold or gold alloy. By surrounding the wire with gold or gold alloy similar to that conventionally used as bonding wire, it is possible to form a perfectly spherical ball without an oxide film and to obtain a good bonding condition with the external lead. While satisfying the characteristics required for bonding wire,
This is to prevent bonding wires from coming into contact with each other due to deformation of the bonding wires due to flow resistance of the resin during resin encapsulation.
銅合金の芯材の直径がボンディングワイヤーの直径の１
０％未満では芯材による強度の向上の効果が不充分で、
樹脂封入時の流動抵抗によるボンディングワイヤーの変
形の防止が充分でなく、８０％を超えると従来の条件で
はボンディング出来なくなるので、銅合金の芯材の直径
がボンディングワイヤーの直径の１０％以上、８０％以
下であることが必要である。The diameter of the copper alloy core material is 1 of the diameter of the bonding wire.
If it is less than 0%, the strength improvement effect of the core material is insufficient,
The deformation of the bonding wire due to flow resistance during resin encapsulation is not sufficiently prevented, and if it exceeds 80%, bonding cannot be performed under conventional conditions. % or less.
芯材としては、金と融点が近く、比較的酸素に対し不活
性であり、かつ高導電性で高強度のものが望ましい。本
発明の実施態様の一つとしては、銅合金として銀０．１
〜５重量％、残部銅及び不可避不純物からなる組成を有
するものである。銀が０、１重量％未満では強度、樹脂
封入時の流動抵抗によるボンディングワイヤーの変形の
防止が不充分で芯材として用いるには不適当であり、銀
が５重量％を超えた組成では長期保存中にボンディング
接合性が悪化するので銀０．１〜５重量％、残部銅及び
不可避不純物からなる組成を有することが必要である。The core material is preferably one that has a melting point close to that of gold, is relatively inert to oxygen, has high conductivity, and has high strength. In one embodiment of the present invention, silver 0.1 is used as the copper alloy.
It has a composition of ~5% by weight, the balance being copper and unavoidable impurities. If the silver content is less than 0.1% by weight, the strength and prevention of deformation of the bonding wire due to flow resistance during resin encapsulation will be insufficient, making it unsuitable for use as a core material.If the silver content exceeds 5% by weight, it will not last long. Since the bonding properties deteriorate during storage, it is necessary to have a composition consisting of 0.1 to 5% by weight of silver, the balance being copper and unavoidable impurities.
又、本発明の実ＭＧ様の一つとしては、銅合金の芯材が
ジルコニウム０６０１〜０．２重量％、クロム０．０５
〜０．３重量％、マグネシウム０、Ｏ１〜０．３重量％
のうち少くとも１種以上を含み、残部銅及び不可避不純
物からなる組成を有するものであり、ジルコニウムが０
．０１重量％未満、又は、クロムが０．０５重量％未満
、若しくは、マグネシウムが０．０１重量％未満である
と銅合金の強度、樹脂封入時の流動抵抗によるボンディ
ングワイヤーの変形の防止が不充分で芯材として用いる
には不適当であり、ジルコニウムが０．２重量％を超え
たり、又は、クロムが０．３重量％を超えたり、若しく
は、マグネシウムが０．３重量％を超えた組成ではボン
ディングワイヤーの耐酸化性が低下しボンディング接合
性が劣化するので、ジルコニウム０．０１〜０．２重量
％、クロム０６０５〜０．３重量％、マグネシウム０．
０１〜０．３重量％のうち少くとも１種以上を含み、残
部銅及び不可避不純物からなる組成を有することが必要
である。In addition, as one of the real MGs of the present invention, the core material of the copper alloy contains 0601 to 0.2% by weight of zirconium and 0.05% by weight of chromium.
~0.3% by weight, 0 magnesium, 1~0.3% by weight O
It has a composition containing at least one of the following, the balance being copper and unavoidable impurities, and zirconium is 0.
．． If the content is less than 0.01% by weight, chromium is less than 0.05% by weight, or magnesium is less than 0.01% by weight, the strength of the copper alloy and the prevention of deformation of the bonding wire due to flow resistance during resin encapsulation are insufficient. If the composition contains more than 0.2% by weight of zirconium, more than 0.3% by weight of chromium, or more than 0.3% by weight of magnesium, it is unsuitable for use as a core material. Since the oxidation resistance of the bonding wire is reduced and the bonding properties are deteriorated, 0.01 to 0.2% by weight of zirconium, 0.5 to 0.3% by weight of chromium, and 0.05% by weight of magnesium are used.
01 to 0.3% by weight, and the balance is copper and unavoidable impurities.
本発明のような２重構造のボンディングワイヤーを製造
するには、銅合金の細線に金めつきと伸線加工とを交互
に施す方法、銅合金と金もしくは金合金からなる２重構
造のビレットを熱間押し出し加工後伸線加工する方法等
を用いれば良い。In order to manufacture a bonding wire with a double structure as in the present invention, a method of alternately applying gold plating and wire drawing to a thin copper alloy wire, a method of producing a double structure billet made of a copper alloy and gold or a gold alloy, etc. A method such as hot extrusion followed by wire drawing may be used.
電気銅、純度９９．９９重量％の銀及び各々ジルコニウ
ム、クロム、マグネシウムと銅との母合金を用い、第１
表に示す組成の銅合金を溶解鋳造し、次に溝ロール加工
を施した後、伸線加工と中間焼鈍を繰り返すことにより
直径０．０３ｗｍの合金線を得た（但し、組成番号１０
のものは、銅芯材中に硬質なＣｕ３Ｚｒ相が分散する組
成であり、それが原因で伸線中に断線が多発し、合金線
が得られなかった）。Using electrolytic copper, silver with a purity of 99.99% by weight, and mother alloys of zirconium, chromium, magnesium and copper, the first
A copper alloy having the composition shown in the table was melted and cast, then subjected to groove roll processing, and then repeated wire drawing and intermediate annealing to obtain an alloy wire with a diameter of 0.03 wm (composition number 10
(The alloy wire had a composition in which a hard Cu3Zr phase was dispersed in the copper core material, which caused many wire breaks during wire drawing, and an alloy wire could not be obtained).
この合金線を芯材とし、脱脂、酸洗等の前処理をした後
中性シアン浴を用いて金メツキを施し、焼鈍、伸線加工
を繰り返し施すことにより、第２表に示すような直径０
．０３ｍｍの金合金／金の２重構造のボンディングワイ
ヤーを得た。This alloy wire is used as a core material, and after pre-treatment such as degreasing and pickling, it is gold-plated using a neutral cyan bath, and by repeatedly performing annealing and wire drawing processing, the diameter as shown in Table 2 is obtained. 0
．． A gold alloy/gold double structure bonding wire of 0.03 mm was obtained.
このように作成された試料の評価の為に、引張り強度は
室温に於ける破断伸び率が６％になるように熱処理した
後、引張り試験により求めた。正常なボールが形成され
たかどうかは、ワイヤボンディングマシーンを用い、１
０％の水素ガスを含む窒素ガス気流中でボールを形成し
、その外観を観察することにより判定した。ボンディン
グ接合性すなわちボンディングワイヤーと半導体素子の
電極及び外部リードとの間の接合状況は、ワイヤーボン
ディングマシーンを用い超音波熱圧着方式により半導体
素子及びリードフレームとボンディングしたボンディン
グワイヤーをフックで引掛けて引張り、接合部がはく離
する強度を求めた。また、上記と同様な方法でワイヤー
ボンディングした試料を２００℃で１００時間保持した
後のボンディング接合性についての値も測定し、その経
時変化を求めた。樹脂封入時のワイヤーの接触による不
良の起りやすさは、上記と同様な方法で４ｆｌの間隔に
ワイヤーボンディングした試料についてモールディング
マシーン（トランスファーモールド型）によりエポキシ
樹脂（住友ベークライト製、Ｅ Ｍ Ｅ −６３００）
を金型温度１８０°Ｃ１射出圧１００ｋｇ／−の条件で
モールドした時のワイヤー流れ量をＸ線透過装置により
撮影したＸ線写真から求め、その値から評価した。なお
、ワイヤー流れ量は第１図に示した様にエポキシ樹脂を
モールドした時のワイヤーの変形量で示した。In order to evaluate the samples thus prepared, the tensile strength was determined by a tensile test after heat-treating the samples so that the elongation at break was 6% at room temperature. To check whether a normal ball has been formed, use a wire bonding machine.
A ball was formed in a nitrogen gas stream containing 0% hydrogen gas, and the appearance of the ball was observed. Bonding properties, that is, the bonding conditions between the bonding wire and the electrodes and external leads of the semiconductor element, are determined by hooking and pulling the bonding wire that has been bonded to the semiconductor element and lead frame using a wire bonding machine using an ultrasonic thermocompression method. , the strength at which the joint peels off was determined. In addition, the bonding bonding properties of samples wire-bonded in the same manner as above were measured after being held at 200° C. for 100 hours, and the changes over time were determined. The likelihood of defects due to contact of wires during resin encapsulation was determined by using a molding machine (transfer mold type) with epoxy resin (manufactured by Sumitomo Bakelite, EM E-6300) using a molding machine (transfer mold type) for samples wire-bonded at 4 fl intervals using the same method as above. )
The amount of wire flow when molded at a mold temperature of 180° C. and an injection pressure of 100 kg/- was determined from an X-ray photograph taken with an X-ray transmission device, and evaluation was made from that value. Note that the amount of wire flow is indicated by the amount of deformation of the wire when molding the epoxy resin, as shown in FIG.
純度９９．９９重量％以上で第１表に示した組成の市販
品１．２についても同様に諸特性値を測定し第２表に示
した。Regarding commercially available product 1.2 having a purity of 99.99% by weight or more and the composition shown in Table 1, various characteristic values were similarly measured and shown in Table 2.
第２表において、試験番号１−１０と市販品ｌ。In Table 2, test numbers 1-10 and commercial product l.
２のデータより本発明によるボンディングワイヤーが従
来のボンディングワイヤーよりも樹脂封入時のワイヤー
流れ量が小さく、従ってワイヤー同志の接触による不良
の起りやすさが小さくなっており、かつ、他の緒特性も
良好であることが判る。The data in 2 shows that the bonding wire according to the present invention has a smaller wire flow rate during resin encapsulation than the conventional bonding wire, and therefore is less likely to cause defects due to contact between wires, and has other characteristics as well. It turns out that it is in good condition.
試験番号１〜１０と１１．１２との比較により、銅合金
の芯材の直径がボンディングワイヤーの直径の１０％未
満又は８０％を超える値では、ワイヤー流れ量が大きか
ったり、ボールの形状が不良で接合性も良くなかったリ
ボンデイングワイヤーとしての特性が不良となることが
判る。また、試験番号１〜５と１３．１５との比較によ
り、銅合金の芯材で銀が０．１重量％未満又は５重量％
を超える組成では、ワイヤー流れ量が大きかったり、ボ
ンディング接合性が経時変化をすることが判り、また試
験番号６〜１０と１４．１５との比較により、銅合金の
芯材でジルコニウムが０．０１重量％未満又は０．２重
量％を超える組成、又は、クロムが０．０５重量％未満
又は０．３重量％を超える組成、若しくは、マグネシウ
ムが０．０１重量％未満又は０、３重量％を超える組成
では、前記したように合金線が得られなかったり、ボー
ルの形状が良くなかったり、ワイヤー流れ量が大きかっ
たり、ボンディング接合性が悪いことが判る。Comparison of test numbers 1 to 10 and 11.12 shows that if the diameter of the copper alloy core material is less than 10% or more than 80% of the bonding wire diameter, the wire flow rate is large or the ball shape is poor. It can be seen that the properties as a ribbon-dying wire were poor, and the bondability was also poor. In addition, by comparing test numbers 1 to 5 and 13.15, it was found that silver was less than 0.1% by weight or 5% by weight in the copper alloy core material.
It was found that with a composition exceeding A composition containing less than 0.2% by weight or more than 0.2% by weight, or a composition containing less than 0.05% by weight or more than 0.3% by weight of chromium, or a composition containing less than 0.01% by weight or 0.3% by weight of magnesium. It can be seen that if the composition exceeds that range, as described above, an alloy wire cannot be obtained, the shape of the ball is not good, the amount of wire flow is large, and the bonding properties are poor.
なお、第２表において、ボール形状が真球状でボールの
表面に酸化被膜が全く観察されない場合を良、それ以外
を不良とした。また芯材の直径をボンディングワイヤー
の直径に対する百分率で示した。In Table 2, cases where the ball was perfectly spherical and no oxide film was observed on the surface of the ball were judged as good, and other cases were judged as poor. In addition, the diameter of the core material is expressed as a percentage of the diameter of the bonding wire.
第１表
〔発明の効果〕
以上から明らかなように、本発明により半導体素子の樹
脂封入時のワイヤー同志の接触による不良が起りにくい
多ビン半導体デバイス用として好適なボンディングワイ
ヤーが得られる。Table 1 [Effects of the Invention] As is clear from the above, the present invention provides a bonding wire suitable for multi-bin semiconductor devices in which defects due to contact between wires during resin encapsulation of semiconductor elements are less likely to occur.
第１図は、ワイヤー流れ量の定義を示すための図である
。図中、破線は、ワイヤーボンディング直後のワイヤー
を真上から見た時の位置を示して居り、実戦は、エポキ
シ樹脂をモールドした後のワイヤーを真上から見た位置
を示して居り、ワイヤー流れ量は両者のずれの最大値で
ある。
特許出願人 住友金属鉱山株式会社FIG. 1 is a diagram showing the definition of wire flow rate. In the figure, the broken line shows the position of the wire immediately after wire bonding when viewed from directly above, and the actual line shows the position of the wire viewed from directly above after molding with epoxy resin. The amount is the maximum value of the deviation between the two. Patent applicant Sumitomo Metal Mining Co., Ltd.
Claims (1)
からなるボンディングワイヤーにおいて、銅合金の芯材
の直径がボンディングワイヤーの直径の１０％以上、８
０％以下であることを特徴とするボンディングワイヤー
。 ２）銅合金の芯材を有し、その外側が金もしくは金合金
からなるボンディングワイヤーにおいて、銅合金の芯材
が銀０．１〜５重量％、残部銅及び不可避不純物からな
ることを特徴とするボンディングワイヤー。 ３）銅合金の芯材を有し、その外側が金もしくは金合金
からなるボンディングワイヤーにおいて、銅合金の芯材
がジルコニウム０．０１〜０．２重量％、クロム０．０
５〜０．３重量％、マグネシウム０．０１〜０．３重量
％のうち少くとも１種以上を含み、残部銅及び不可避不
純物からなる組成を有することを特徴とするボンディン
グワイヤー。[Claims] 1) A bonding wire having a core material of copper alloy and an outer surface of gold or gold alloy, wherein the diameter of the copper alloy core material is 10% or more of the diameter of the bonding wire, 8
A bonding wire characterized by having a content of 0% or less. 2) A bonding wire having a core material of a copper alloy and an outer surface of gold or a gold alloy, characterized in that the core material of the copper alloy consists of 0.1 to 5% by weight of silver, the balance being copper and unavoidable impurities. bonding wire. 3) In a bonding wire having a core material of copper alloy and an outer surface of gold or gold alloy, the core material of the copper alloy contains 0.01 to 0.2% by weight of zirconium and 0.0% by weight of chromium.
5 to 0.3% by weight of magnesium, at least one of 0.01 to 0.3% by weight of magnesium, and the balance consists of copper and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2329992A JPH04206646A (en) | 1990-11-30 | 1990-11-30 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2329992A JPH04206646A (en) | 1990-11-30 | 1990-11-30 | Bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04206646A true JPH04206646A (en) | 1992-07-28 |
Family
ID=18227564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2329992A Pending JPH04206646A (en) | 1990-11-30 | 1990-11-30 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04206646A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
| AU2005258658B2 (en) * | 2004-06-30 | 2010-11-11 | Sumitomo Electric Industries, Ltd. | Method of Producing a Magnesium-Alloy Material |
| WO2011013527A1 (en) | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
-
1990
- 1990-11-30 JP JP2329992A patent/JPH04206646A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
| AU2005258658B2 (en) * | 2004-06-30 | 2010-11-11 | Sumitomo Electric Industries, Ltd. | Method of Producing a Magnesium-Alloy Material |
| AU2005258658B8 (en) * | 2004-06-30 | 2011-03-10 | Sumitomo Electric Industries, Ltd. | Method of Producing a Magnesium-Alloy Material |
| WO2011013527A1 (en) | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
| KR20120035093A (en) | 2009-07-30 | 2012-04-13 | 가부시키가이샤 닛데쓰 마이크로 메탈 | Bonding wire for semiconductor |
| US8742258B2 (en) | 2009-07-30 | 2014-06-03 | Nippon Steel & Sumikin Materials Co., Ltd. | Bonding wire for semiconductor |
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