JPS634651A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS634651A JPS634651A JP61146981A JP14698186A JPS634651A JP S634651 A JPS634651 A JP S634651A JP 61146981 A JP61146981 A JP 61146981A JP 14698186 A JP14698186 A JP 14698186A JP S634651 A JPS634651 A JP S634651A
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- semiconductor device
- corroded
- airtightness
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 239000003566 sealing material Substances 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 2
- 230000002950 deficient Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49177—Combinations of different arrangements
- H01L2224/49179—Corner adaptations, i.e. disposition of the wire connectors at the corners of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Examining Or Testing Airtightness (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に関し、特に、ハーメチックパッ
ケージ方式の半導体装置の気密不良を検出する技術に適
用して有効な技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a technique that is effective when applied to a technique for detecting airtightness in a hermetic package type semiconductor device.
一般に、ハーメチックパッケージ方式の半導体装置は、
配線基板に半導体チップが塔載され、該半導体チップの
電極と配線基板の端子電極とがボンディングワイヤ又は
突起電極で電気的に接続され、その上からキャップをか
ぶせ、配線基板とキャップの間が封止材、例えば、ガラ
ス封止材で気密に封止されている。Generally, hermetic packaging semiconductor devices are
A semiconductor chip is mounted on a wiring board, the electrodes of the semiconductor chip and the terminal electrodes of the wiring board are electrically connected with bonding wires or protruding electrodes, and a cap is placed over the top of the semiconductor chip to seal the space between the wiring board and the cap. It is hermetically sealed with a sealing material, for example, a glass sealing material.
しかしながら、発明者は、前記気密封止技術を検討した
効果１次の問題点を見出した。However, the inventor investigated the above-mentioned hermetic sealing technology and found a problem of the first order of effect.
すなわち、前記封止材のぬれ性が悪いため、気重不良が
生じて水分が侵入し、前記ボンディングワイヤが腐食し
て断線するおそれがあった。In other words, since the sealing material has poor wettability, there is a risk that moisture will enter due to poor air pressure, and the bonding wire will corrode and break.
本発明の目的は、半導体装置の気密不良を事前に検出す
ることができる技術を提供することにある。An object of the present invention is to provide a technique that can detect airtightness failure in a semiconductor device in advance.
本発明の前記ならびにその他の目的と新規な特徴は１本
明細書の記述及び添付図面によって明らかになるであろ
う。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、気密不良を検出するための腐食しやすいダミ
部材を密封空間内部に設け、この腐食しやすいダミ部材
の腐食を検出する手段を設けたものである。That is, a dummy member that is easily corroded for detecting poor airtightness is provided inside the sealed space, and a means for detecting corrosion of this dummy member that is easily corroded is provided.
前記手段によれば１例えば、半導体装置の封止材のぬれ
性が悪いため、気密不良が生じて水分が侵入し、ボンデ
ィングワイヤが腐食する前に気密不良検出用の腐食しや
すいダミ部材が先に腐食し。According to the above method, 1. For example, due to poor wettability of the sealing material of a semiconductor device, airtightness is poor and moisture intrudes, and a corrosive dummy member for detecting airtightness is first removed before the bonding wire is corroded. corrosion.
その断線が検出されるので、半導体装置の気密不良を事
前に検出するものである。Since the disconnection is detected, the leakage failure of the semiconductor device can be detected in advance.
以下、本発明の一実施例を図面を用いて具体的に説明す
る。Hereinafter, one embodiment of the present invention will be specifically described using the drawings.
なお、実施例を説明するための全回において。In addition, in all the times for explaining the example.
同一機能を有するものは同一符号を付け、その繰り返５
しの説明は省略する。Items with the same function are given the same code and repeated 5
The explanation will be omitted.
第１図は１本発明の実施例Ｉの半導体装置のキャップを
取り外した状態の斜視図、
第２図は、第１図に示す半導体装置の全体概略構成を示
す断面図である。FIG. 1 is a perspective view of a semiconductor device according to Embodiment I of the present invention with the cap removed, and FIG. 2 is a sectional view showing the overall schematic structure of the semiconductor device shown in FIG.
本実施例１の半導体装置は、第２図に示すように、配線
基板１の上に半導体チップ２が塔載され、この半導体チ
ップ２の電極（パッド）２Ａと配線基板１のＱ子電極（
パッド）ＩＡとが１例えば。As shown in FIG. 2, in the semiconductor device of Example 1, a semiconductor chip 2 is mounted on a wiring board 1, and an electrode (pad) 2A of this semiconductor chip 2 and a Q electrode (
Pad) IA and 1 example.
線径３ｏ〜４０μｍのアルミニウム、銅等のボンディン
グワイヤ（又は突起電極）３で電気的に接続される。そ
して、第１図に示すように、気密不良を検出するための
前記正規のボンディングワイヤ３の線径よりも細いダミ
ワイヤ（腐食しやすいダミ部材）４が、正規のボンディ
ングワイヤ３と同様に、半導体チップ２の上に設けられ
ているダミ電極（パッド）２Ｂと配線基板１の上に設け
られているダミ端子電極（パッド）ＩＢとの間に電気的
に接続される。前記配線基板１上のダミ端子電極ＩＢは
、外部装置と接続されるダミリードピン７Ｂに接続され
ている。前記気密不良検出用の細いダミワイヤ（腐食し
やすいダミ部材）４としては１例えば、線径５〜２０μ
ｍのアルミニウム。Electrical connection is made with a bonding wire (or protruding electrode) 3 made of aluminum, copper, etc. with a wire diameter of 30 to 40 μm. As shown in FIG. 1, a dummy wire (a dummy member that is easily corroded) 4, which is thinner than the wire diameter of the regular bonding wire 3 for detecting airtightness, is connected to a semiconductor like the regular bonding wire 3. An electrical connection is made between a dummy electrode (pad) 2B provided on the chip 2 and a dummy terminal electrode (pad) IB provided on the wiring board 1. The dummy terminal electrode IB on the wiring board 1 is connected to a dummy lead pin 7B that is connected to an external device. The thin dummy wire (dummy member that is easily corroded) 4 for detecting airtightness is, for example, a wire diameter of 5 to 20μ.
m aluminum.
銅等が用られる。そして、前記ボンディングワイヤ３及
び細いワイヤ（腐食しやすいダミ部材）４がボンディン
グされた後、その上からキャップ５をかぶせて配線基板
１とキャップ５とを封止材６、例えばガラス等の低融点
物質からなる封止材で気密に封止される。Copper etc. are used. After the bonding wire 3 and the thin wire (dummy member that is easily corroded) 4 are bonded, a cap 5 is placed over them, and the wiring board 1 and the cap 5 are sealed using a sealing material 6, such as a low melting point material such as glass. It is hermetically sealed with a sealing material made of a substance.
また、前記配線基板１には、端子型＃１ｉｌＡと電気的
に接続されたリードピン７が設けられている。Further, the wiring board 1 is provided with a lead pin 7 electrically connected to the terminal type #1ilA.
前述のように、半導体チップ２の上に設けられているダ
ミ電極（パッド）２Ｂと配線基板１の上に設けられてい
るダミ端子電極（パッド）ＩＢとの間を細いダミワイヤ
（腐食しやすいダミ部材）４で電気的に接続し、ダミ端
子電極（パッド）ＩＢと電気的に接続されるダミリード
ピン７Ｂと７Ｂとの間の導通をテスタ等で検出すること
により。As mentioned above, a thin dummy wire (a dummy wire that is easily corroded) is connected between the dummy electrode (pad) 2B provided on the semiconductor chip 2 and the dummy terminal electrode (pad) IB provided on the wiring board 1. By detecting continuity between dummy lead pins 7B and 7B electrically connected to the dummy terminal electrode (pad) IB using a tester or the like.
半導体装置の封止剤のぬれ性が悪いため、気密不良が生
じて水分が侵入し、ボンディングワイヤが腐食する前に
気密不良検出用の腐食しやすいダミワイヤ４カ〜先に腐
食して断線し、その断線が検出されるので、半導体装置
の気密不良を事前に検出することができる。Due to the poor wettability of the sealant for semiconductor devices, airtightness is poor and moisture intrudes, and four easily corroded dummy wires for detecting airtightness failures corrode and break before the bonding wires corrode. Since the disconnection is detected, it is possible to detect airtightness failure of the semiconductor device in advance.
〔実施例■〕
本発明の実施例■の半導体装置は、前記実施例■の前記
気密不良検出用の細いワイヤ（腐食しやすいダミ部材）
４の代りに、例えば、線径３０〜４０μｍのアルミニウ
ム、銅等からなる通常のボンディングワイヤ３のボンデ
ィング時の変形量を大きくして腐食しやすくしたもので
ある。[Example ■] The semiconductor device of Example ■ of the present invention has the thin wire (dummy member that is easily corroded) for detecting airtightness failure of Example ■.
4, for example, a normal bonding wire 3 made of aluminum, copper, etc. with a wire diameter of 30 to 40 μm is deformed more easily during bonding to make it more susceptible to corrosion.
このように構成することにより、前記実施例■と同様の
効果を得ることができる。With this configuration, the same effects as in the embodiment (2) can be obtained.
以上、本発明を実施例にもとすき具体的に説明したが、
本発明は、前記実施例に限定されるものではなく、その
要旨を逸脱しない範囲において種々変更可能であること
は言うまでもない。The present invention has been specifically explained above using examples, but
It goes without saying that the present invention is not limited to the embodiments described above, and can be modified in various ways without departing from the spirit thereof.
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとおりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
すなわち、気密不良を検出するための腐食しやすいダミ
部材を密封空間内部に設け、この腐食しやすいダミ部材
の腐食を検出する手段を設けたことにより１例えば、半
導体装置の封止材のぬれ性が悪いため、気密不良を生じ
て水分が侵入し、ボンディングワイヤが腐食する前に気
密不良検出用の腐食しやすいダミ部材が先に腐食し、そ
の断線が検出されるので、半導体装置の気密不良を事前
に検出することができる。That is, by providing a dummy member that easily corrodes inside the sealed space to detect poor airtightness, and providing a means for detecting corrosion of this dummy member that easily corrodes, 1. Due to poor airtightness, moisture intrudes due to poor airtightness, and before the bonding wire corrodes, the dummy member that is easily corroded for detecting poor airtightness corrodes first, and its disconnection is detected, resulting in poor airtightness of semiconductor devices. can be detected in advance.
第１図は１本発明の実施例夏の半導体装置のキャップを
取り外した状態の斜視図、
第２図は、第１図に示す半導体装置の全体概略構成を示
す断面図である。
図中、１・・・配線基板、ＩＡ・・・端子電極（パッド
）。
ＩＢ・・・ダミ端子電極（パッド）、２・・・半導体チ
ップ、２Ａ・・・電極（パッド）、２Ｂ・・・ダミ電極
（パッド）、３・・・ボンディングワイヤ、４・・・細
いダミワイヤ（腐食しやすいダミ部材）、５・・・キャ
ップ。
６・・・封止材、７・・・リードピン、７Ｂ・・・ダミ
リードピンである。FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention with the cap removed, and FIG. 2 is a cross-sectional view showing the overall schematic structure of the semiconductor device shown in FIG. In the figure, 1... wiring board, IA... terminal electrode (pad). IB... Dummy terminal electrode (pad), 2... Semiconductor chip, 2A... Electrode (pad), 2B... Dummy electrode (pad), 3... Bonding wire, 4... Thin dummy wire (dummy parts that are prone to corrosion), 5... Cap. 6... Sealing material, 7... Lead pin, 7B... Dummy lead pin.
Claims (1)
プの電極と配線基板の端子電極とがボンディングワイヤ
又は突起電極で電気的に接続され、その上からキャップ
がかぶせられ、配線基板とキャップとの間が封止材で気
密に封止されて成る半導体装置において、気密不良を検
出するための腐食しやすいダミ部材を密封空間内部に設
け、該腐食しやすいダミ部材の腐食を検出する手段を設
けたことを特徴とする半導体装置。 ２、前記気密不良検出用部材は、正規のボンディングワ
イヤの線径よりも細いワイヤから成ることを特徴とする
特許請求の範囲第１項記載の半導体装置。 ３、前記気密不良検出用部材は、正規のボンディングワ
イヤの線径と同じものであって、そのワイヤのボンディ
ング時の変形量を大きくして腐食しやすくしたことを特
徴とする特許請求の範囲第１項記載の半導体装置。[Claims] 1. A semiconductor chip is mounted on a wiring board, the electrodes of the semiconductor chip and the terminal electrodes of the wiring board are electrically connected by bonding wires or protruding electrodes, and a cap is placed over it. In a semiconductor device in which a wiring board and a cap are hermetically sealed with a sealing material, a dummy member that is easily corroded for detecting poor airtightness is provided inside the sealed space, and the dummy member that is easily corroded is A semiconductor device characterized by being provided with means for detecting corrosion. 2. The semiconductor device according to claim 1, wherein the hermeticity defect detection member is made of a wire having a diameter smaller than that of a regular bonding wire. 3. The airtightness defect detection member has the same wire diameter as a regular bonding wire, and the amount of deformation of the wire during bonding is increased to make it more susceptible to corrosion. The semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61146981A JPS634651A (en) | 1986-06-25 | 1986-06-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61146981A JPS634651A (en) | 1986-06-25 | 1986-06-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS634651A true JPS634651A (en) | 1988-01-09 |
Family
ID=15419927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61146981A Pending JPS634651A (en) | 1986-06-25 | 1986-06-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS634651A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0438047U (en) * | 1990-07-30 | 1992-03-31 | ||
| WO2002011203A3 (en) * | 2000-07-31 | 2003-07-31 | Koninkl Philips Electronics Nv | Plastic encapsulated semiconductor devices with improved corrosion resistance |
| JP2009141053A (en) * | 2007-12-05 | 2009-06-25 | Denso Corp | Lead frame and manufacturing method of semiconductor device |
| JP2011142211A (en) * | 2010-01-07 | 2011-07-21 | Mitsubishi Electric Corp | Semiconductor device |
| WO2020100208A1 (en) * | 2018-11-13 | 2020-05-22 | 三菱電機株式会社 | Semiconductor device and semiconductor device leak inspection method |
-
1986
- 1986-06-25 JP JP61146981A patent/JPS634651A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0438047U (en) * | 1990-07-30 | 1992-03-31 | ||
| WO2002011203A3 (en) * | 2000-07-31 | 2003-07-31 | Koninkl Philips Electronics Nv | Plastic encapsulated semiconductor devices with improved corrosion resistance |
| JP2009141053A (en) * | 2007-12-05 | 2009-06-25 | Denso Corp | Lead frame and manufacturing method of semiconductor device |
| JP2011142211A (en) * | 2010-01-07 | 2011-07-21 | Mitsubishi Electric Corp | Semiconductor device |
| WO2020100208A1 (en) * | 2018-11-13 | 2020-05-22 | 三菱電機株式会社 | Semiconductor device and semiconductor device leak inspection method |
| JPWO2020100208A1 (en) * | 2018-11-13 | 2021-04-01 | 三菱電機株式会社 | Leak inspection method for semiconductor devices and semiconductor devices |
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