JPS6345469B2 - - Google Patents
Info
- Publication number
- JPS6345469B2 JPS6345469B2 JP60063422A JP6342285A JPS6345469B2 JP S6345469 B2 JPS6345469 B2 JP S6345469B2 JP 60063422 A JP60063422 A JP 60063422A JP 6342285 A JP6342285 A JP 6342285A JP S6345469 B2 JPS6345469 B2 JP S6345469B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- gas
- ccl
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6342285A JPS60221586A (ja) | 1985-03-29 | 1985-03-29 | プラズマエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6342285A JPS60221586A (ja) | 1985-03-29 | 1985-03-29 | プラズマエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60221586A JPS60221586A (ja) | 1985-11-06 |
| JPS6345469B2 true JPS6345469B2 (US20080293856A1-20081127-C00150.png) | 1988-09-09 |
Family
ID=13228833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6342285A Granted JPS60221586A (ja) | 1985-03-29 | 1985-03-29 | プラズマエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60221586A (US20080293856A1-20081127-C00150.png) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943844A (US20080293856A1-20081127-C00150.png) * | 1972-09-01 | 1974-04-25 | ||
| JPS5269831A (en) * | 1975-12-10 | 1977-06-10 | Tokyo Shibaura Electric Co | Etching device |
| JPS5623752A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1985
- 1985-03-29 JP JP6342285A patent/JPS60221586A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943844A (US20080293856A1-20081127-C00150.png) * | 1972-09-01 | 1974-04-25 | ||
| JPS5269831A (en) * | 1975-12-10 | 1977-06-10 | Tokyo Shibaura Electric Co | Etching device |
| JPS5623752A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60221586A (ja) | 1985-11-06 |
