JPS6345195A - High heat-conductive substrate - Google Patents
High heat-conductive substrateInfo
- Publication number
- JPS6345195A JPS6345195A JP22758686A JP22758686A JPS6345195A JP S6345195 A JPS6345195 A JP S6345195A JP 22758686 A JP22758686 A JP 22758686A JP 22758686 A JP22758686 A JP 22758686A JP S6345195 A JPS6345195 A JP S6345195A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- aluminum
- nitride layer
- substrate
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 この発明は、電気絶縁材料の製造技術の分野に属する。[Detailed description of the invention] 〔Technical field〕 This invention belongs to the field of manufacturing technology for electrically insulating materials.
特に、高い熱伝導を必要とする電気回路用の基板を製造
する技術の分野に属する。さら↓こは、セラミックに関
する技術分野にも属する。In particular, it belongs to the field of technology for manufacturing boards for electrical circuits that require high thermal conductivity. This also belongs to the technical field related to ceramics.
〔背景技術］
ＩＣ等に代表される半導体素子の高築積化や大電力化が
進み、これに従って放熱性の良い電気絶縁材料が要求さ
れるようになった。これに応えて各種の高熱伝導性基板
が提案されている。これらのうちの代表的な例として多
層構造を有する基板が提案されている。たとえば、鉄ま
たはアルミニュウム素地板の面に樹脂層を形成して、放
熱性と絶縁性を具備させた基板、あるいはアルミニウム
素地板に面にアルマイト層を形成し、その上に樹脂層を
形成して構成した、電気絶縁性と高熱伝導性を具備させ
た基板がそれに該当する。[Background Art] As semiconductor devices, such as ICs, have become more expensive to build and have more power, electrical insulating materials with good heat dissipation properties have been required. In response to this demand, various highly thermally conductive substrates have been proposed. As a representative example of these, a substrate having a multilayer structure has been proposed. For example, a substrate with a resin layer formed on the surface of an iron or aluminum base plate to provide heat dissipation and insulation properties, or a substrate with an alumite layer formed on the surface of an aluminum base plate and a resin layer formed on it. This corresponds to a substrate that has electrical insulation and high thermal conductivity.
一方、セラミックを素材として製造された基板として窒
化アルミニウムセラミック、酸化ベリリ ・ウムセラ
ミソク、炭化ケイ素−酸化ベリリウムセラミック等が知
られている。On the other hand, aluminum nitride ceramics, beryllium oxide ceramics, silicon carbide-beryllium oxide ceramics, and the like are known as substrates manufactured using ceramic materials.
しかし、上記の各基板は熱伝導性が充分でなく、あるい
は価格が高い等の欠点があり、この両面において満足さ
れるような基板は未だ提供されてはいない。そこで、熱
伝導、価格の両方の点で優れた高熱伝導性基板が、業界
において要望されていた。However, each of the above-mentioned substrates has drawbacks such as insufficient thermal conductivity or high cost, and a substrate that satisfies both of these aspects has not yet been provided. Therefore, there has been a demand in the industry for a highly thermally conductive substrate that is excellent in terms of both thermal conductivity and cost.
この発明は、電気絶縁性を有すると共に、熱伝導性に優
れた基板を提供することを目的とする。An object of the present invention is to provide a substrate having electrical insulation properties and excellent thermal conductivity.
この発明は、黒鉛素地板の表面に窒化アルミニウム層を
介して酸化アルミニウム層を形成してなる点に特徴を有
する。This invention is characterized in that an aluminum oxide layer is formed on the surface of a graphite base plate via an aluminum nitride layer.
ここで使用されるシリコン素地板としては、単結晶シリ
コンおよび多結晶シリコンが使用されるが、特に限定す
る趣旨ではない。窒化アルミニウム層は、アルミニウム
化合物等の化合物の電気から目的の物質をたい積させる
、いわゆるＣＶＤ法を採用して形成する。ただし、特に
窒化アルミニウム層の製法を限定する趣旨ではない。目
的の層が得られればどのような方法によるのも自由であ
る。たとえば、窒化アルミニウム層を形成する場合、反
応ガスとしてＡＩ！Ｂｒ３、Ｎ２、Ｎ２およびＡｒを使
用し、反応管内圧力を２〜１００トールとし、誘導コイ
ルを使用してプラズマ放電を発生させ、素地板温度は６
００〜８００ ’Ｃにして窒化アルミニウム層を生成さ
せる。ただし、この条件は一例である。窒化アルミニウ
ム層の厚みは、特に限定する趣旨ではないが、４〜３０
０μが望ましい、４μを下回ると電気絶縁性に難点があ
り、これより厚みが大きい方では特性的には問題ないが
、３００μ以上の層を形成することは、惧鉛基体とのミ
スマツチによるはく離等の問題が生じる。また、ドクタ
ーブレード法などによる窒化アルミニウム基板の製法と
比較しても優位性が見い出せない。As the silicon base plate used here, single crystal silicon and polycrystalline silicon are used, but this is not intended to be particularly limiting. The aluminum nitride layer is formed by employing a so-called CVD method in which a target substance is deposited from electricity of a compound such as an aluminum compound. However, this is not intended to specifically limit the manufacturing method of the aluminum nitride layer. Any method can be used as long as the desired layer can be obtained. For example, when forming an aluminum nitride layer, the reactive gas is AI! Using Br3, N2, N2 and Ar, the pressure inside the reaction tube was 2 to 100 Torr, an induction coil was used to generate plasma discharge, and the substrate temperature was 6.
00-800'C to form an aluminum nitride layer. However, this condition is just an example. Although the thickness of the aluminum nitride layer is not particularly limited, it is from 4 to 30 mm.
0μ is desirable; if it is less than 4μ, there will be problems with electrical insulation; if it is thicker than this, there will be no problems in terms of characteristics, but if you form a layer with a thickness of 300μ or more, there may be problems such as peeling due to mismatch with the lead-containing substrate. The problem arises. Moreover, no superiority can be found when compared with methods for manufacturing aluminum nitride substrates such as the doctor blade method.
また、窒化アルミニウム層の上に形成する酸化アルミニ
ウムの層は、その下地となる窒化アルミニウム層の酸化
による変質を防止し、さらには、印刷特性を向上させる
効果を有する。Furthermore, the aluminum oxide layer formed on the aluminum nitride layer has the effect of preventing deterioration due to oxidation of the underlying aluminum nitride layer and further improving printing characteristics.
酸化アルミニウム層の厚みは、特には限定はしないが、
０．０５〜５．５μの範囲が望ましい。The thickness of the aluminum oxide layer is not particularly limited, but
A range of 0.05 to 5.5μ is desirable.
なお、酸化アルミニウム層も、ＣＶＤ法により形成する
のが好都合である。−例を述べると、三塩化アルミニウ
ムを使用し、キャリヤガスとして炭酸ガス、水素ガスを
使用し、生成温度を８ｏｏ〜１０００℃の範囲にして生
成させることが出来る。ただし、酸化アルミニウム層の
形成は、窒化アルミニウム層の形成の後、これを大気中
で１１００〜１１５０℃の温度で、１０〜２０時間熱処
理することによっても形成することが出来る。Note that it is convenient that the aluminum oxide layer is also formed by the CVD method. - To give an example, it can be produced using aluminum trichloride, using carbon dioxide gas or hydrogen gas as a carrier gas, and at a production temperature in the range of 8oo to 1000°C. However, the aluminum oxide layer can also be formed by heat-treating the aluminum nitride layer in the atmosphere at a temperature of 1100 to 1150° C. for 10 to 20 hours after forming the aluminum nitride layer.
（実施例）
窒化アルミニウムは、ＣＶ Ｄ法により嶌鉛素地上に形
成した。(Example) Aluminum nitride was formed on a lead substrate by a CVD method.
すなわち反応ガスとしては、Ａ Ｉ Ｂ ｒ ３ 、Ｎ
２、Ｎ２およびＡｒを使用し、反応管内圧力を１０ト
ールで、誘導コイルを使用してプラズマ放電を発生させ
、素地板温度は７００’ｃで、窒化アルミニウム層を作
成することにより、各種の層厚の窒化アルミニウム層を
形成した。つぎに、この窒化アルミニウム層の上にＣＶ
Ｄ法により酸化アルミニウムの層を、各種の厚みで形成
した。酸化アルミニウムの層の形成条件は、三塩化アル
ミニウムを使用し、炭酸ガス、水素ガスをキャリヤガス
として使用し、反応管温度を９００’Ｃとして生成させ
た。That is, as the reaction gas, A I B r 3 , N
2. Using N2 and Ar, the pressure inside the reaction tube was 10 torr, the induction coil was used to generate plasma discharge, the substrate temperature was 700'c, and various layers were formed by creating an aluminum nitride layer. A thick aluminum nitride layer was formed. Next, on top of this aluminum nitride layer, CV
Aluminum oxide layers were formed with various thicknesses by method D. The aluminum oxide layer was formed using aluminum trichloride, carbon dioxide gas and hydrogen gas as carrier gas, and a reaction tube temperature of 900'C.
第１表に、これらの基板の熱伝導性を、熱抵抗値で示し
た。Table 1 shows the thermal conductivity of these substrates in terms of thermal resistance values.
なお、比較例としては、９６％アルミナ基板、窒化アル
ミニウム基板および樹脂／Ａｌ複合基板の熱抵抗値を示
した。As comparative examples, the thermal resistance values of a 96% alumina substrate, an aluminum nitride substrate, and a resin/Al composite substrate are shown.
なお、熱抵抗値は、３ ｗ Ｘ ３ ｔ＊のシリコンチ
ップを実装した場合の値である。Note that the thermal resistance value is a value when a 3 w x 3 t* silicon chip is mounted.
［以下余白］
第 １ 表
出熱抵抗値の単位：”Ｃ／ｋｃａｌ
〔発明の効果〕
この発明に係る熱伝導性基板は、黒鉛素地板面に窒化ア
ルミニウム層を形成し、さらにその上に酸化アルミニウ
ム層を形成したことを特徴とするので、電気絶縁性と熱
伝導性に優れているという特徴がある。[Blank below] Unit of 1st expressed thermal resistance value: "C/kcal [Effects of the invention] The thermally conductive substrate according to the present invention has an aluminum nitride layer formed on the surface of a graphite base plate, and further oxidized on the aluminum nitride layer. Since it is characterized by the formation of an aluminum layer, it has excellent electrical insulation and thermal conductivity.
Claims (3)
アルミニウム層を形成したことを特徴とする高熱伝導性
基板。(1) A highly thermally conductive substrate characterized in that an aluminum oxide layer is formed on a graphite base plate via an aluminum nitride layer.
ることを特徴とする特許請求の範囲第１項記載の高熱伝
導性基板。(2) The highly thermally conductive substrate according to claim 1, wherein the aluminum nitride layer has a thickness of 4 to 300 μm.
μであることを特徴とする特許請求の範囲第１項または
第２項記載の高熱伝導性基板。(3) The thickness of the aluminum oxide layer is 0.05 to 5.5
3. The highly thermally conductive substrate according to claim 1 or 2, characterized in that it is μ.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9504386 | 1986-04-24 | ||
| JP61-95043 | 1986-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345195A true JPS6345195A (en) | 1988-02-26 |
| JPH0323515B2 JPH0323515B2 (en) | 1991-03-29 |
Family
ID=14127040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22758686A Granted JPS6345195A (en) | 1986-04-24 | 1986-09-25 | High heat-conductive substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345195A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2654094A1 (en) * | 1989-11-09 | 1991-05-10 | Aerospatiale | METHOD FOR MANUFACTURING CARBON MATERIAL PROTECTED AGAINST OXIDATION BY ALUMINUM NITRIDE AND MATERIAL OBTAINED THEREBY |
-
1986
- 1986-09-25 JP JP22758686A patent/JPS6345195A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2654094A1 (en) * | 1989-11-09 | 1991-05-10 | Aerospatiale | METHOD FOR MANUFACTURING CARBON MATERIAL PROTECTED AGAINST OXIDATION BY ALUMINUM NITRIDE AND MATERIAL OBTAINED THEREBY |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0323515B2 (en) | 1991-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6273799A (en) | Multilayer ceramic circuit substrate | |
| JPS5921032A (en) | Substrate for semiconductor device | |
| JP2002110844A (en) | Substrate for electronic circuit and electronic module using substrate for electronic circuit | |
| JPS6345195A (en) | High heat-conductive substrate | |
| JPS6345189A (en) | High heat-conductive substrate | |
| JPS6323342A (en) | High heat conductive substrate | |
| JPS61119094A (en) | High thermoconductive circuit board | |
| JPS6256385A (en) | High heat conductive substrate | |
| JPS638284A (en) | High heat conductivity substance | |
| JPS61171155A (en) | High thermal conductive insulated substrate | |
| JPH013097A (en) | High thermal conductivity substrate | |
| JPS58103156A (en) | Substrate for semiconductor device | |
| JPS61277106A (en) | Highly heat conductive substrate | |
| JPH0414504B2 (en) | ||
| JPS63170289A (en) | Aluminum nitride substrate with oxidation layer on surface | |
| JPS6246986A (en) | Aluminum nitride substrate and manufacture | |
| JPS61172355A (en) | High-heat conductive insulating substrate | |
| JPS59184586A (en) | Circuit board for placing semiconductor element | |
| JP3271342B2 (en) | Manufacturing method of aluminum nitride sintered body | |
| JPS62169489A (en) | Heat conductive insulating substrate | |
| JPS62235262A (en) | Manufacture of aluminum nitride sintered body | |
| JPS6229192A (en) | Enamelled substrate for electronic circuit | |
| JPH0867565A (en) | Production of aluminum nitride ceramic | |
| JPH0265163A (en) | Metallic substrate for integrated circuit | |
| JPS6276597A (en) | Multilayer ceramic circuit substrate |