JPS634323B2 - - Google Patents
Info
- Publication number
- JPS634323B2 JPS634323B2 JP55110218A JP11021880A JPS634323B2 JP S634323 B2 JPS634323 B2 JP S634323B2 JP 55110218 A JP55110218 A JP 55110218A JP 11021880 A JP11021880 A JP 11021880A JP S634323 B2 JPS634323 B2 JP S634323B2
- Authority
- JP
- Japan
- Prior art keywords
- trimming
- film resistor
- film
- width
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009966 trimming Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
本考案は、膜抵抗体のレーザ光を用いたトリミ
ング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for trimming a film resistor using laser light.
膜抵抗体をトリミングして高精度を得るもつと
も一般的な方法として、第１図に示すようなＬカ
ツトトリミング法がある。これは、
膜抵抗体１の幅方向に先ずレーザ光を照射して
膜除去を行ない、所望値のたとえば−10％となる
と次に長さ方向へトリミングを開始するターンポ
イント２を経て前記の粗調整から微調整を行な
う。 One of the most common methods of trimming a film resistor to achieve high precision is the L-cut trimming method as shown in FIG. This is done by first irradiating the width direction of the film resistor 1 with a laser beam to remove the film, and when it reaches a desired value of, for example, -10%, it then goes through turn point 2 where trimming is started in the length direction, and then the above-mentioned roughening is performed. Make fine adjustments from adjustment.
ここでターンポイント２の周辺部２−１（交斜
線部）にはマイクロクラツクを生じやすく膜抵抗
体の安定度、ノイズ発生等の欠点がある。 Here, the peripheral area 2-1 (cross-hatched area) of the turn point 2 has drawbacks such as the tendency to cause microcracks and the stability of the membrane resistor and the generation of noise.
本発明の目的は、上記した従来技術の欠点をな
くし、高安定でしかも高精度の膜抵抗体のトリミ
ング方法を提供するにある。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a highly stable and highly accurate method for trimming a film resistor.
即ち、本発明は、直線トリミングを組み合わせ
て、所望の抵抗値を得るレーザトリミング法を提
供するものである。 That is, the present invention provides a laser trimming method that combines linear trimming to obtain a desired resistance value.
次に本発明を一実施例により説明する。第２図
に示す通り、コの字形パターンの膜抵抗体１１の
一辺で、一方の電極１２の方向へレーザ光を照射
して膜除去を行ない残り膜巾W1として、たとえ
ば所望値の−10％までの粗調整を行なう。さらに
他方の辺で他方の電極１３の方向へ同様にして膜
除去を行ない残り膜巾W2として微調整を行なう。 Next, the present invention will be explained by way of an example. As shown in FIG. 2, the film is removed by irradiating a laser beam in the direction of one electrode 12 on one side of the U-shaped film resistor 11, and the remaining film width W1 is set to a desired value of -10, for example. Make rough adjustments up to %. Further, on the other side, the film is similarly removed in the direction of the other electrode 13, and fine adjustment is performed as the remaining film width W2 .
このとき残りの膜幅W2は粗調整時の残り膜幅
W1よりもさらに大きくとることにより素子感度
（レーザ光による膜除去長に対する抵抗値変化量）
を小さくし、高精度の膜抵抗体が得られる。 At this time, the remaining film width W 2 is the remaining film width at the time of rough adjustment.
By setting W even larger than 1 , the element sensitivity (the amount of change in resistance value with respect to the length of film removed by laser light)
can be made smaller and a highly accurate film resistor can be obtained.
以上述べたように本発明によれば、Ｌカツトト
リミングにおけるターンポイントで発生するマイ
クロクラツクを防止し、しかもレーザトリミング
の精度、速度を損なうことなく高安定度で、高精
度の膜抵抗体が得られる。 As described above, according to the present invention, microcracks that occur at turn points in L-cut trimming can be prevented, and a highly stable and highly accurate film resistor can be produced without sacrificing accuracy or speed of laser trimming. can get.
第１図は従来の実施例を示す平面図、第２図は
本考案による一実施例を示す平面図である。
１１：膜抵抗体、１２，１３：電極、W1，
W2：残り膜幅。
FIG. 1 is a plan view showing a conventional embodiment, and FIG. 2 is a plan view showing an embodiment according to the present invention. 11: Film resistor, 12, 13: Electrode, W 1 ,
W 2 : Remaining film width.
Claims (1)
て直線トリミングを施し所望の抵抗値となすトリ
ミングにおいて、コの字形膜抵抗体の一方の辺で
粗調整を、他方の辺で前記粗調整時よりも残り膜
幅を広くした微調整を行なうことを特徴とする膜
抵抗体のトリミング方法。1. In trimming the U-shaped film resistor pattern to a desired resistance value by performing linear trimming using a laser beam, coarse adjustment is performed on one side of the U-shaped film resistor, and the rough adjustment is performed on the other side. A method for trimming a film resistor, which is characterized by finely adjusting the remaining film width to be wider than the remaining film width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11021880A JPS5735304A (en) | 1980-08-13 | 1980-08-13 | Method of trimming film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11021880A JPS5735304A (en) | 1980-08-13 | 1980-08-13 | Method of trimming film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5735304A JPS5735304A (en) | 1982-02-25 |
| JPS634323B2 true JPS634323B2 (en) | 1988-01-28 |
Family
ID=14530062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11021880A Granted JPS5735304A (en) | 1980-08-13 | 1980-08-13 | Method of trimming film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5735304A (en) |
-
1980
- 1980-08-13 JP JP11021880A patent/JPS5735304A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5735304A (en) | 1982-02-25 |
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