JPS6342150A - Light-erasing and resin-sealed type semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the breakdown of bonding wire and to improve moisture resistance, by circumferentially providing a frame member having rigidity at the upper part of one end of the bonding wire, which is connected to the bonding pad part of a semiconductor element so as to surround a light transmitting window member, which is bonded to the semiconductor element. CONSTITUTION:A frame member 9 is provided around a light transmitting window member 2. The frame member 9 consists of, e.g., metal. The member 9 is constituted in a square shape. It is desirable to have rigidity against an acting mechanism using tightening force. In order to attach the frame member 9 to a resin 1, a recess part is formed in the upper surface of the 1. The member 9 is buried in the recess part together with a bonding agent, and the part is cured and bonded. Other methods such as simultaneous embedment at the time of molding can be used. Bonding is performed without forming a recess part. The member can be simply fixed to the upper surface of the packaging body. Thus, the breakdown defects of bonding wire can be prevented, and moisture resistance can be improved.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photo-erasable resin-sealed semiconductor device, and in particular,
Preventing disconnection of bonding wires in the device, and
The present invention relates to a technique for improving the moisture resistance of the device.

[Conventional technology]

As an example of a conventional structure of an ultraviolet-erasable plastic-sealed EP-ROM package, a semiconductor element (chip) is fixed on the tab of a metal lead frame, and the bonding pad portion of the element and the internal leads of the lead frame are bonded to each other. For example, wire bonding is performed using a thin Au wire using a thermocompression bonding method, a transparent window member made of transparent alumina, for example, is bonded onto the element using a silicone rubber or gel adhesive, and a resin ( Resin) has been proposed (Japanese Unexamined Patent Publication Nos. 57-42152 and 59-1).
67037).

[Problem that the invention seeks to solve]

However, in such conventionally proposed photo-erasable resin-sealed semiconductor devices, wire-bonded bonding wires tend to break, and in temperature cycle tests (temperature resistance cycle tests), for example, -55 to 150C lower short/Nikle However, there is a problem that the wire breaks. Therefore, it is expected that the plastic version will become popular as a low-cost EP-ROM in the future, but this may hinder this.

An object of the present invention is to provide a technique that can prevent such wire disconnection defects and improve reliability.

The above and other objects and novel features of the present invention are:
It will become clear from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in the present invention, a rigid metal material, for example, is placed above one end of the bonding wire surrounding the light-transmitting window member bonded to the semiconductor element and connected to the bonding pad portion of the semiconductor element. A frame member having a diameter is provided around the periphery.

[Effect]

In this way, by providing the frame member, it is possible to prevent disconnection of the bonding wire and improve moisture resistance.
A highly reliable photo-erasable resin-sealed semiconductor device was obtained.

The reason why the wire breakage can be prevented and the moisture resistance can be improved is considered to be as follows.

In other words, one of the main causes of disconnection of thin metal wires, which are bonding wires, is as shown in FIG.
Since the adhesion between the sealing body 1 and the transparent window member 2 is not good, the bonding interface between them easily peels off, resulting in a gap 8 between the sealing body 1 and the window member 2, as shown by the dotted line in the same figure. It is.

Note that FIG. 3 is a sectional view of the main parts of a photo-erasable resin-sealed semiconductor device, in which 4 is a semiconductor element, 5 is a bonding material, and 6 is a
is a bonding wire (fine metal wire).

By the way, considering the vicinity of the bonding part (near the neck part of the thin wire) of the thin metal wire 6 on the semiconductor element 4 side, the bonding material 5 (translucent) for bonding the transparent window member 2 to the semiconductor element 4 ), silicone rubber or gel adhesive is generally used, and due to its flexibility, the wire neck part is attached to the semiconductor element 4 at part A, and to the resin sealing body 1 at part B. , and it can be considered that there is no large restraining force between the points A and B.

Under these circumstances, when a temperature cycle (T~) test is performed, the entire package deforms and A
Due to the relative displacement between the parts, the wire 6 is subjected to repeated strain (stress) between the parts A, resulting in fatigue fracture and disconnection. Here, if the interfacial peeling 8 between the sealing resin and the window member 2 in the resin sealing body 1 described above exists, the deformation of the entire package when the meK ratio is 41 or more when this does not exist becomes very large. Strain between part A of wire 6 (
Stress) Ik also increases, leading to wire breakage in a short period of time.

Furthermore, the presence of the gap 8 also deteriorates moisture resistance.

That is, moisture containing impurities such as C1'' ions enters from the outside through this gap, easily penetrates close to the surface of the semiconductor element 40, and corrodes the A4 bonding pad portion on the surface of the element 4. This may cause wire breakage and malfunction.

Under such circumstances, by providing the frame member of the present invention, T
~ Sometimes the package is thermally deformed, and as a result, the resin molded body 1
There is a force that tends to cause the window member 2 to separate from the window member 2, but this can be prevented by the tightening force.

As a result, the relative displacement between the A parts at T~ mentioned above, that is, the repeated strain (stress) between the wires AB is reduced, making it difficult for the wires to break due to fatigue.
Since the airtightness between the window member 2 and the window member 2 is improved, the infiltration of moisture containing impurities is also prevented, and moisture resistance reliability is improved.

〔Example〕

Next, the present invention will be explained based on embodiments shown in the drawings.

FIG. 1 is a plan view of a semiconductor device showing an embodiment of the present invention, FIG. 2 is a sectional view taken along the line A-A in FIG. It is shown enlarged.

As shown in these figures, a frame member 9 is provided around the translucent window member 2.

The frame member 9 is made of metal, for example. An example of the frame member 9 is
As shown in FIG. 1, it has a rectangular shape.

It is preferable that the frame member 9 has rigidity because of the mechanism of action using the tightening force described above.

An example of a method for attaching the frame member 9 to the resin sealing body 1 is to form a recess on the upper surface of the sealing body 1, and to embed the frame member 9 together with an adhesive into the recess and harden and adhere it. There is no problem in using other methods such as embedding at the same time during molding.

Alternatively, it may be adhered without forming the recessed portion (or it may be simply adhered to the upper surface of the sealing body 1).

FIG. 4 shows a modification of the present invention, in which a frame member 9 is fixed to the upper surface of the sealing body 1. It is desirable that the linear thermal expansion coefficient (α) of the frame member 90 is larger than that of the resin sealing body 1, and that this is bonded and embedded at a high temperature of 150 to 200C. However, a resin molding body 1 having a value smaller than α may be fixed at a low temperature.

In the former case, the metal (including alloy) constituting the frame member 9 is preferably a copper alloy. In the latter case, the gold M (including alloys) constituting the frame member 9 may be iron-based alloys.

In addition, in FIG. 2 and FIG. 4, 7 is a lead frame,
3 is its tab (support).

The semiconductor element (chip) 4 in the present invention is made of, for example, a silicon single crystal substrate, and a large number of circuit elements are formed within this chip by well-known techniques to provide one circuit function. A specific example of the circuit element is, for example, a MOS transistor, and these circuit elements form the circuit functions of, for example, a logic circuit and a memory.

According to the present invention, due to the presence of the frame member 9 as shown in the above embodiment, the occurrence of a gap 8 due to peeling 9 separation between the resin sealing body 1 and the transparent window member 2 can be prevented. The tightening force prevents the gap 8 from being blocked, and reduces the distortion in the neck portion of the wire 6 that is increased due to the presence of the gap 8.

It was possible to prevent disconnection of the wire 6 and improve moisture resistance reliability.

Although the invention made by the present inventor has been specifically described above based on Examples, it is to be noted that the present invention is not limited to the above-mentioned Examples, and can be modified extensively without departing from the gist thereof. Not even.

For example, the frame member is not limited to those shown in the above embodiments, and members of various sizes and shapes can be used.

In addition to the DIL (dual in line) type, the present invention is applicable to the PPP (hook) II hack package).
It can be applied to various resin-sealed semiconductor devices such as.

〔Effect of the invention〕

According to the present invention, as described above, there is provided a technology that can prevent disconnection defects in bonding wires, improve moisture resistance, and improve reliability of photo-erasable resin-sealed semiconductor devices. Its industrial significance lies in the fact that it is a dog.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of the present invention, FIG. 2 is a sectional view taken along the line A-A in FIG. 1, FIG. 3 is an enlarged sectional view of the second fixed part, and FIG. It is a sectional view showing an example. 1... Resin sealing body, 2... Translucent window member, 3...
Tab, 4... Semiconductor element, 5... Bonding material, 6...
- Conductor (bonding wire), 7... Lead frame, 8... Gap, 9... Frame member. Figure 1 Figure 2

Claims (1)

[Claims] 1. A light-erasable resin comprising a semiconductor element fixed to a support, the element and the support connected through a conductor, and a translucent window member bonded to the element using a bonding material. A light-erasable resin-sealed semiconductor device characterized in that the light-erasable resin-sealed semiconductor device comprises a rigid frame member surrounding the light-transmitting window member. 2. The support is a lead frame, the conductor is a thin metal wire, the bonding material is a silicone adhesive, the rigid frame member is a metal frame member, and the light-erasable resin-encapsulated semiconductor device is attached to the lead frame. A semiconductor element is fixed on the tab, the bonding pad part of the element and the internal lead of the lead frame are wire-bonded with a thin metal wire, and a transparent window member is bonded onto the element using a silicone adhesive. , the silicone adhesive covers the bonding portion of the bonding pad portion of the element with the thin metal wire, and the metal frame member is embedded in a recess provided in the upper part of the resin sealing body. A photo-erasable resin-sealed semiconductor device according to claim 1.