JPS6339668B2 - - Google Patents
Info
- Publication number
- JPS6339668B2 JPS6339668B2 JP7695883A JP7695883A JPS6339668B2 JP S6339668 B2 JPS6339668 B2 JP S6339668B2 JP 7695883 A JP7695883 A JP 7695883A JP 7695883 A JP7695883 A JP 7695883A JP S6339668 B2 JPS6339668 B2 JP S6339668B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- activated gas
- vacuum chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 23
- 239000011148 porous material Substances 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- 230000005672 electromagnetic field Effects 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7695883A JPS59200753A (ja) | 1983-04-30 | 1983-04-30 | 薄膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7695883A JPS59200753A (ja) | 1983-04-30 | 1983-04-30 | 薄膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59200753A JPS59200753A (ja) | 1984-11-14 |
| JPS6339668B2 true JPS6339668B2 (zh) | 1988-08-05 |
Family
ID=13620291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7695883A Granted JPS59200753A (ja) | 1983-04-30 | 1983-04-30 | 薄膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200753A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61130487A (ja) * | 1984-11-29 | 1986-06-18 | Matsushita Electric Ind Co Ltd | プラズマ・インジエクシヨン・ｃｖｄ装置 |
| DE3628443C1 (de) * | 1986-08-21 | 1988-02-11 | Dornier System Gmbh | Verfahren zur Erzeugung amorpher Schichten |
| JPH06200376A (ja) * | 1992-05-25 | 1994-07-19 | Fujitsu Ltd | 金薄膜気相成長方法 |
| FR2713388B1 (fr) * | 1993-12-03 | 1996-01-26 | Europ Composants Electron | Procédé de fabrication de condensateur et condensateur issu d'un tel procédé. |
-
1983
- 1983-04-30 JP JP7695883A patent/JPS59200753A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59200753A (ja) | 1984-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4676194A (en) | Apparatus for thin film formation | |
| EP0253361B1 (en) | Thin film forming device | |
| US6570172B2 (en) | Magnetron negative ion sputter source | |
| CA1308689C (en) | Method and apparatus for forming a thin film | |
| US5039376A (en) | Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge | |
| JPS581186B2 (ja) | イオンプレ−テイング装置 | |
| US3492215A (en) | Sputtering of material simultaneously evaporated onto the target | |
| JPS6339668B2 (zh) | ||
| JPH0357191B2 (zh) | ||
| US4264813A (en) | High intensity ion source using ionic conductors | |
| JPS60251269A (ja) | イオンプレ−テイング方法および装置 | |
| JP4448664B2 (ja) | 薄膜材料の形成方法および形成装置 | |
| JP3007579B2 (ja) | シリコン薄膜の製造方法 | |
| JPH0214426B2 (zh) | ||
| JPH0417669A (ja) | プラズマを用いた成膜方法およびｒｆイオンプレーティング装置 | |
| Dugdale | DC glow discharge techniques for surface treatment and coating | |
| EP0418438A1 (en) | Method and apparatus for the plasma etching, substrate cleaning or deposition of materials by D.C. glow discharge | |
| JP3540130B2 (ja) | ゲッターポンプおよび有機金属分子線エピタキシ装置 | |
| JP4408505B2 (ja) | ダイヤモンドライクカーボン膜の形成方法と装置 | |
| JPS6260857A (ja) | 高融点・高沸点・高硬度物質の硼化薄膜形成方法 | |
| JPH0582467B2 (zh) | ||
| CA1341184C (en) | Method and apparatus for the plasma etching substrate cleaning or deposition of materials by d.c. glow discharge | |
| JPH0377870B2 (zh) | ||
| JP2587636B2 (ja) | ダイヤモンド合成法および装置 | |
| JP2004011007A (ja) | 成膜方法 |