JPS6336260A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS6336260A JPS6336260A JP17870286A JP17870286A JPS6336260A JP S6336260 A JPS6336260 A JP S6336260A JP 17870286 A JP17870286 A JP 17870286A JP 17870286 A JP17870286 A JP 17870286A JP S6336260 A JPS6336260 A JP S6336260A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- weight
- light
- electrophotographic photoreceptor
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 19
- 239000000956 alloy Substances 0.000 claims abstract description 19
- 229910018110 Se—Te Inorganic materials 0.000 claims abstract description 12
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 10
- 150000002367 halogens Chemical class 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 4
- 229910052716 thallium Inorganic materials 0.000 claims abstract 3
- 239000010410 layer Substances 0.000 claims description 41
- 108091008695 photoreceptors Proteins 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910001370 Se alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、レーザープリンターやＬＦＤプリンター、あ
るいは可視光を光源とする複写機又【よぞのいずれにも
使用可能な電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electrophotographic photoreceptor that can be used in laser printers, LFD printers, or copying machines that use visible light as a light source.
従来の技術
Ｓｅを主材料として用いた電子写真感光体はすでに完全
に確立された技術であるが、そのままでは５００μｍよ
りも長波長側の光に対する感度が低いため色再現性が不
充分である。またｌ−（ｅ Ｎ ｅレーザーや半導体レ
ーザーなどの低価格のレーザーを用いてレーザー書き込
みをする場合や、ＬＥＤアレイを用いて書き込みをする
場合にも、これらの光源に対する感度が低いため使用不
可能である。Conventional Technology An electrophotographic photoreceptor using Se as a main material is already a completely established technology, but as it is, color reproducibility is insufficient due to low sensitivity to light with wavelengths longer than 500 μm. Also, when writing with a low-cost laser such as an l-(e laser or a semiconductor laser), or when writing with an LED array, it cannot be used because the sensitivity to these light sources is low. It is.
これらの難点を解決するために、ＳｅにＡＳを高濃度に
添加したＳｅΔＳ合金（特開昭４４−３００７５号公報
）を用いることが提案されている。このようなＳｅＡＳ
合金を用いたものはＨｅＮｅレーザーやＩＥＤアレイに
対しては充分な感度を持つが、種々の光源の中で最も小
型で価格も安い半導体レーザーの光に対しては感度を持
たない。そこでＳｅにＴｅを高濃度に添加したＳｅ−Ｔ
ｅ合金が提案されている。In order to solve these difficulties, it has been proposed to use a SeΔS alloy (Japanese Patent Application Laid-open No. 30075/1983) in which AS is added to Se at a high concentration. Such SeAS
Those using alloys have sufficient sensitivity to HeNe lasers and IED arrays, but are not sensitive to light from semiconductor lasers, which are the smallest and cheapest among various light sources. Therefore, Se-T, which is made by adding a high concentration of Te to Se,
e alloys have been proposed.
発明が解決しようとする問題点
ところが、このＳｅ−１ｅ合金を用いたものは半導体レ
ーザーの光に対してかなりの疲労を示すことが多く、又
、傷（＝Ｊき易く、ぞのままでｔ；Ｌ安定した画質を維
持して多数枚の画像を得ることが困難である。Problems to be Solved by the Invention However, products using this Se-1e alloy often show considerable fatigue when exposed to semiconductor laser light, and are also susceptible to scratches (=J) and are easily scratched. ;L It is difficult to obtain a large number of images while maintaining stable image quality.
したがって、本発明の目的は、タングステンランプやハ
ロゲンランプからの光に対して光疲労の少ない、サイク
ル特性の安定した電子写真感光体を得ることにある。Therefore, an object of the present invention is to obtain an electrophotographic photoreceptor with stable cycle characteristics and less optical fatigue when exposed to light from a tungsten lamp or a halogen lamp.
本発明の他の目的は、ＨｅＮｅレーザー、ＬＥＤアレイ
、又は半導体レーザーを光源として使用する場合に、疲
労の少ない、サイクル特性の安定した電子写真感光体を
得ることにある。Another object of the present invention is to obtain an electrophotographic photoreceptor with less fatigue and stable cycle characteristics when a HeNe laser, an LED array, or a semiconductor laser is used as a light source.
本発明のさらに他の目的は、感光体表面に傷がつき難く
、多数枚の画像形成に対して劣化の少ない電子写真感光
体を得ることにある。Still another object of the present invention is to obtain an electrophotographic photoreceptor whose surface is less likely to be scratched and which is less susceptible to deterioration when a large number of images are formed.
問題点を解決するための手段及び作用
本発明の電子写真感光体は、Ｔｅを２５重量％以上含有
する非晶質Ｓｅ−Ｔｅ合金からなる光導電層中にＴ、ｌ
）、Ｎａ、に、Ａ、ｌ）、Ｇａ及びＩｎからなる群より
選ばれた一種以上の元素を１ｐｐｍないし５０００１）
Ｄｌｌｌの濃度で含み、ＡｓをＯないし５重間％の濃度
で含むことを特徴とする。Means and Effects for Solving the Problems The electrophotographic photoreceptor of the present invention has T, l in the photoconductive layer made of an amorphous Se-Te alloy containing 25% by weight or more of Te.
), Na, A, l), Ga, and In at a concentration of 1 ppm to 50001).
It is characterized in that it contains As at a concentration of 5% by weight and O to 5% by weight.
本発明の電子写真感光体における光導電層は、電荷発生
層と、電荷輸送層とに機能分離された構成のものでもよ
く、その場合、電荷発生層は、Ｔ ｅを２５重量％以上
含有する非晶質Ｓｅ−Ｔｅ合金からなる光導電層中にＴ
、ｌｌ 、 Ｎａ、 Ｋ、 Ａ、ｌ）、Ｇａ及びＩｎか
らなる群より選ばれた一種以上の元素を１１）ｌ）ｍな
いし５０００ Ｆ）ｌ）ｍの濃度で含み、ＡｓをＯない
し５重間％の１！度で含むＳｅ−Ｔｅ合金からなり電荷
輸送層が、１５重間％以下のＴｅ又は２重量％以上のＡ
ｓ又は１１０００ｐｐ以下のハロゲンを含むＳｅ層より
なっていてもよい。The photoconductive layer in the electrophotographic photoreceptor of the present invention may have a structure in which the charge generation layer and the charge transport layer are functionally separated, and in that case, the charge generation layer contains 25% by weight or more of Te. T in the photoconductive layer made of amorphous Se-Te alloy
, ll, Na, K, A, l), Ga, and In at a concentration of 11) l) m to 5000 F) l) m, and As containing O to 5 times. 1% between! The charge transport layer is made of a Se-Te alloy containing at least 15% by weight of Te or 2% by weight or more of A.
It may be made of a Se layer containing s or 11,000 pp or less of halogen.
また、その場合、Ｓｅ−Ｔｅ電子写真感光体は厚さ５μ
■以上のＳｅ合金からなる表面保護層を有してもよい。In that case, the Se-Te electrophotographic photoreceptor has a thickness of 5 μm.
(2) A surface protective layer made of the above Se alloy may be provided.
表面保護層は、その表面に”＋ｏｏｏｐｐｍ以下のハロ
ゲン元素及び１０重量％以下のＡｓ又は”ｌｅを含有し
てもよい。The surface protective layer may contain a halogen element of +oooppm or less and 10% by weight or less of As or le on its surface.
第１図は、本発明の電子写真感光体の層構成を示したも
ので１１は感光層、１２は電荷注入阻止層、１３は導電
性支持体である。第２図と第３図は多重構造の光導電層
を持つ本発明の電子写真感光体の層構成を示したもので
、２１は電荷発生層、２２は電荷輸送層である。電荷発
生層は、第２図に示すように表面側にあってもよいし、
また第３図に示すように導電性支持体側にあってもよい
。FIG. 1 shows the layer structure of the electrophotographic photoreceptor of the present invention, in which 11 is a photosensitive layer, 12 is a charge injection blocking layer, and 13 is a conductive support. FIGS. 2 and 3 show the layer structure of the electrophotographic photoreceptor of the present invention having a multilayer photoconductive layer, in which numeral 21 is a charge generation layer and 22 is a charge transport layer. The charge generation layer may be on the surface side as shown in FIG.
Alternatively, as shown in FIG. 3, it may be located on the conductive support side.
第４図、第５図及び第６図はＳｅ合金の表面保護層を持
つ本発明の電子写真感光体の層構成を示したもので、４
１が表面保護層で必る。4, 5, and 6 show the layer structure of the electrophotographic photoreceptor of the present invention having a surface protective layer of Se alloy.
1 is required as a surface protective layer.
感光層１１及び電荷発生層２１は、本発明の電子写真感
光体において最も大切な部分であって、２５重量％以上
のＴｅと０〜５重量％のＡｓを含み、ざらに１１）ｌ）
ｍないし５０００１）ｌ）ｍ望ましくは５１）ｌ）ｍな
いし１ｏｏｏｐｐｍのＴ、ｌｌ 、Ｎａ、Ｋ。The photosensitive layer 11 and the charge generation layer 21 are the most important parts in the electrophotographic photoreceptor of the present invention, and contain 25% by weight or more of Te and 0 to 5% by weight As, and roughly contain 11)l).
m to 50,001)l)m, preferably 51)l)m to 1oooppm of T, ll, Na, K.
Ａ、Ｑ 、 Ｇａ及びＩｎからなる群より選ばれた一種
以上の元素を含む。Contains one or more elements selected from the group consisting of A, Q, Ga, and In.
本発明において、光導電層中のＴｅの濃度が２５重量％
以上でおれば、上記元素の添加効果は顕著であるが、Ｔ
ｅ１度が２５重量％未満では、効果ははっきりとは現れ
ない。In the present invention, the concentration of Te in the photoconductive layer is 25% by weight.
If it is above, the effect of adding the above elements is remarkable, but T
If the e1 degree is less than 25% by weight, the effect will not be apparent.
本発明において、光導電層中にはＡＳが全く含有されて
いなくてもよいが、５重量％以下の範囲ならば含まれて
いるのが好ましい。ＡＳの含有量が５重量％より多くな
ると、残留電位が上昇する。In the present invention, the photoconductive layer does not need to contain any AS at all, but it is preferable that AS be contained within a range of 5% by weight or less. When the content of AS exceeds 5% by weight, the residual potential increases.
本発明において、光導電層中に含有させるＴρ、Ｎａ、
に、Ａ、Ｑ 、Ｇａ及びＩｎの各元素は単独で用いても
よいし、複数のものを組合μて用いてもよい。In the present invention, Tρ, Na, contained in the photoconductive layer,
Furthermore, each of the elements A, Q, Ga, and In may be used alone, or a plurality of elements may be used in combination.
これら元素を上記の範囲の市、添加することにより、長
波長光又は特に近赤外線に対する疲労効果が著しく減少
し、画質の安定性が向」−りる。By adding these elements in the above ranges, the fatigue effect with respect to long wavelength light or especially near infrared light is significantly reduced, and the stability of image quality is improved.
しかしながら、添加量が１ ｐｐｍより少なくないと添
加効果が期待できなく、また５０００ｐＦ１ｍより多い
と残留電位が上昇づる。However, if the amount added is less than 1 ppm, no effect can be expected, and if it is more than 5000 pF1m, the residual potential increases.
本発明の電子写真感光体にお（プる電荷輸送層２２は高
純度のｓｅＴ：構成されていてもよいか、Ｔｅを１５重
量％以下、又はＡＳを２重量％以下、又はハロゲン元素
を１１０００１）Ｉ）以下の濃度で含んでいてもよい。In the electrophotographic photoreceptor of the present invention, the charge transport layer 22 may be composed of high-purity seT, 15% by weight or less of Te, 2% by weight or less of AS, or 110,001% of a halogen element. ) I) may be contained in the following concentrations.
これにより感光体の変質の防止、画質の安定化、特に下
地よごれの防止に効果がある。This is effective in preventing deterioration of the photoreceptor, stabilizing image quality, and especially preventing soiling of the base.
また、本発明の電子写真感光体の表面には、ｓｅを主成
分とする表面保護層を設（プると画質の安定化にとって
さらに有効であるので望ましい。Further, it is desirable to provide a surface protective layer containing se as a main component on the surface of the electrophotographic photoreceptor of the present invention because it is more effective for stabilizing image quality.
この表面保護層は１０重量％以下のＡＳ又は丁ｅ又は１
ｏｏｏｐｐｍ以下のハロゲン元素を含／Ｖでいてもよい
。This surface protective layer contains up to 10% by weight of AS or
It may contain a halogen element of oooppm or less.
この表面保護層を設けることにより光導電層の変質が防
止され、またＡｓ又は王ｅを含む場合には、これらによ
る増感効果により除電が容易となる。Providing this surface protective layer prevents the photoconductive layer from deteriorating in quality, and when it contains As or Al, it facilitates static elimination due to the sensitizing effect of these.
本発明の電子写真感光体に置いて、導電性支持体と光導
電性との間には電荷注入阻止層を設【プてもＪ：い。電
荷注入阻止層を構成する材料は周知のものから選択され
る。In the electrophotographic photoreceptor of the present invention, a charge injection blocking layer may be provided between the conductive support and the photoconductor. The material constituting the charge injection blocking layer is selected from known materials.
実施例 次に、本発明を実施例によって説明する。Example Next, the present invention will be explained by examples.
実施例１
表面を脱脂し、洗浄したアルミニウム基板を真空蒸着機
内に設置した。真空蒸６機の真空槽内には３個の蒸発源
を置き、第１の蒸発源にはＳｅを、第２の蒸発源には４
３重量％の丁ｅと１１０１）ｌ）のＴ１を含む５Ｃ−Ｔ
ｅ合金を、第３の蒸発源にはＡｓを５重量％含むＳｅ−
Ａ３合金をそれぞれ適当量大れた。Example 1 An aluminum substrate whose surface had been degreased and cleaned was placed in a vacuum deposition machine. Three evaporation sources are placed in the vacuum chamber of the six vacuum evaporators, with Se in the first evaporation source and Se in the second evaporation source.
5C-T containing 3% by weight of T1 and 1101)l)
e alloy, and the third evaporation source was Se-alloy containing 5% by weight of As.
Appropriate amounts of A3 alloy were added to each.
まず、真空槽内を１ Ｘ １ ｏ−”１’ｏｒｒ以上の
真空に引いてから、アルミニウム基板を真空槽内に設置
したハロゲンランプにより輻射加熱し、７０’Ｃに保っ
た。次に、第１の蒸発源を加熱して、アルミニウム基板
上に約６０μｍのＳｅ層を蒸着した。First, the inside of the vacuum chamber was evacuated to 1×1 o-”1'orr or more, and then the aluminum substrate was radiantly heated with a halogen lamp installed in the vacuum chamber and maintained at 70'C. The evaporation source No. 1 was heated to deposit an approximately 60 μm thick Se layer on the aluminum substrate.
第１の蒸発源の温度か下がったところで、真空を破らず
に、すぐ第２の蒸発源を加熱し、Ｓｅ層上に、Ｔ１を含
有する約０．５μｍ、のＳｅ−Ｔｅ合金層を蒸着した。When the temperature of the first evaporation source drops, the second evaporation source is immediately heated without breaking the vacuum, and a Se-Te alloy layer of approximately 0.5 μm thick containing T1 is evaporated on the Se layer. did.
第２の蒸発源の温度が下がったところで、真空を保った
まま、さらに第３の蒸発源を加熱し、Ｓｅ−Ｔｅ層上に
、約１μＴｒ１．のＳｅ−ＡＳ合金層を蒸着した。When the temperature of the second evaporation source has decreased, the third evaporation source is further heated while maintaining the vacuum, and approximately 1 μTr1. A Se-AS alloy layer was deposited.
すべての蒸着が終了し、蒸発源の温度が下がってから、
真空を破って、形成された電子写真感光体を取り出した
。このものを印加電圧＋６ＫＶのコロトロンで帯電し、
７８０ｎｍの光で露光したところ、次のような］ントラ
ス１〜電位の温度変化が測定できた。After all the evaporation has finished and the temperature of the evaporation source has decreased,
The vacuum was broken and the formed electrophotographic photoreceptor was taken out. This material was charged with a corotron with an applied voltage of +6KV,
When exposed to light at 780 nm, the following temperature change in the potential of the truss 1 could be measured.
比較例
９ 一
実施例１において、第２の蒸発源に入れるｓｅ−Ｔｅ合
金を、王、Ｏを含まないもの、１１ち、４３ｗｔ％のＴ
ｅを含むＳｅ−１”’ｅ金合金代えた以外は実施例１と
全く同一の条件で蒸着を行い、Ｓｅ−Ｔｅ電子写真感光
体を作成した。Comparative Example 9 In Example 1, the se-Te alloys added to the second evaporation source were
A Se-Te electrophotographic photoreceptor was produced by vapor deposition under the same conditions as in Example 1 except that the Se-1"'e gold alloy containing e was used instead.
この電子写真感光体について、実施例１にお（ヲると同
様の方法で］ンＩ〜ラスｌ〜電位の測定を行ったところ
、次のようなコントラスト電位の温度変化がみられた。When the potential of this electrophotographic photoreceptor was measured in the same manner as in Example 1, the following temperature change in contrast potential was observed.
実施例２
第２の蒸発源にいれるＳｅ−Ｔｅ合金として、それぞれ
Ｔ ｅ ４３ ｗ ｔ％−丁、ｆｌ ３０１）Ｉ）ｍ
、Ｔｅ４３ｗｔ％−Ｎａ３０１）ｔ）ｍ ＳＴｅ４３ｗ
ｔ％−Ｇａ３ｏｐｐｍ及びＴ ｅ ４３ ｗ ｔ％−Ｉ
ｎ３０１）Ｉ）ｍを含む４種類の合金を用意した。Example 2 As the Se-Te alloy put in the second evaporation source, T e 43 wt %-T, fl 301) I) m
, Te43wt%-Na301)t)m STe43w
t%-Ga3oppm and T e 43 w t%-I
Four types of alloys containing n301)I)m were prepared.
これを用いて実施例１にあＣブると同様の方法で真空蒸
着を行ない、４種類のＳｅ−Ｔｅ電子写真感光体を作成
した。Using this, vacuum deposition was performed in the same manner as in Example 1 to produce four types of Se-Te electrophotographic photoreceptors.
これらのものについて、実施例１と同様の方法でコント
ラスト電位の測定を行ったところ、次のような結果が得
られた。比較のために、第２の蒸発源におけるＳｅ−Ｔ
ｅ合金として、Ｔ、ｌ） 、Ｎａ１Ｇａ又はｉｎを含ま
ないものを用いた場合のコントラスト電位も示す。When the contrast potential of these samples was measured in the same manner as in Example 1, the following results were obtained. For comparison, Se-T in the second evaporation source
Contrast potentials are also shown when an alloy that does not contain T, l), Na1Ga, or in is used as the e alloy.
この結果からＴ、Ｑ 、Ｎａ、Ｇａ又はＴｅを添加発明
の効果
本発明の電子写真感光体は、前記のとおりの構成を有す
るから、長波長側の光に対する感度が高く、そして、タ
ングステンランプやハロゲンランプからの光に対して光
疲労が少なく、また温度に対する安定性も優れており、
また、１−１８やＮｅレーザー、ＬＥＤアレイは半導体
レーザーを光源として使用する場合にも、疲労が少なく
、湿度に対する安定性も優れている。These results show that the effect of the invention by adding T, Q, Na, Ga, or Te The electrophotographic photoreceptor of the present invention has the above-mentioned structure, so it has high sensitivity to light on the long wavelength side, and has a high sensitivity to light on the long wavelength side. It has less optical fatigue when exposed to light from halogen lamps, and has excellent temperature stability.
Furthermore, even when a semiconductor laser is used as a light source, 1-18, Ne laser, and LED array have less fatigue and excellent stability against humidity.
したがって、本発明の電子写真感光体は、レーザープリ
ンター、ＬＥＤプリンターあるいは可視光を光源とする
複写機などに用いた場合、安定した画質を維持して多数
枚の画像を得ることができる。Therefore, when the electrophotographic photoreceptor of the present invention is used in a laser printer, an LED printer, or a copying machine using visible light as a light source, it is possible to maintain stable image quality and obtain a large number of images.
第１図ないし第６図は、それぞれ本発明の実施例の層構
成を説明するための模式図である。
１１・・・光導電層、１２・・・電荷注入阻止層、１３
・・・導電性支持体、２１・・・電荷発生層、２２・・
・電荷輸送層。FIGS. 1 to 6 are schematic diagrams for explaining the layer structure of the embodiments of the present invention, respectively. 11... Photoconductive layer, 12... Charge injection blocking layer, 13
... Conductive support, 21... Charge generation layer, 22...
・Charge transport layer.
Claims (3)
合金からなる光導電層中に、Ｔｌ、Ｎａ、Ｋ、Ａｌ、Ｇ
ａ及びＩｎからなる群より選ばれた一種以上の元素を１
ｐｐｍないし５０００ｐｐｍの濃度で含み、Ａｓを０な
いし５重量％の濃度で含むことを特徴とする電子写真感
光体。(1) Amorphous Se-Te containing 25% by weight or more of Te
In the photoconductive layer made of an alloy, Tl, Na, K, Al, G
One or more elements selected from the group consisting of a and In
An electrophotographic photoreceptor characterized in that it contains As in a concentration of ppm to 5000 ppm and As in a concentration of 0 to 5% by weight.
され、電荷発生層が、Ｔｅを２５重量％以上含有する非
晶質Ｓｅ−Ｔｅ合金からなり、かつＴｌ、Ｎａ、Ｋ、Ａ
ｌ、Ｇａ及びＩｎからなる群より選ばれた一種以上の元
素を１ｐｐｍないし５０００ｐｐｍの濃度で、又、Ａｓ
を０ないし５重量％の濃度で含み、電荷輸送層が、０〜
１５重量％のＴｅ、０〜２重量％のＡｓ又は１０００ｐ
ｐｍ以下のハロゲン元素を含むＳｅよりなる特許請求の
範囲第１項に記載の電子写真感光体。(2) The photoconductive layer is composed of a charge generation layer and a charge transport layer, and the charge generation layer is composed of an amorphous Se-Te alloy containing 25% by weight or more of Te, and Tl, Na, K, A
one or more elements selected from the group consisting of L, Ga, and In at a concentration of 1 ppm to 5000 ppm, and As
at a concentration of 0 to 5% by weight, and the charge transport layer contains 0 to 5% by weight.
15 wt% Te, 0-2 wt% As or 1000p
The electrophotographic photoreceptor according to claim 1, which is made of Se containing a halogen element of pm or less.
０重量％のＡｓ又はＴｅを含有するＳｅからなる厚さ５
μｍ以下の表面保護層を有する特許請求の範囲第２項に
記載の電子写真感光体。(3) 0 to 1000 ppm of halogen element, and 0 to 1
Thickness 5 consisting of Se containing 0% by weight of As or Te
The electrophotographic photoreceptor according to claim 2, which has a surface protective layer of μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17870286A JPS6336260A (en) | 1986-07-31 | 1986-07-31 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17870286A JPS6336260A (en) | 1986-07-31 | 1986-07-31 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6336260A true JPS6336260A (en) | 1988-02-16 |
Family
ID=16053061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17870286A Pending JPS6336260A (en) | 1986-07-31 | 1986-07-31 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6336260A (en) |
-
1986
- 1986-07-31 JP JP17870286A patent/JPS6336260A/en active Pending
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