JPS6334649B2 - - Google Patents
Info
- Publication number
- JPS6334649B2 JPS6334649B2 JP55010871A JP1087180A JPS6334649B2 JP S6334649 B2 JPS6334649 B2 JP S6334649B2 JP 55010871 A JP55010871 A JP 55010871A JP 1087180 A JP1087180 A JP 1087180A JP S6334649 B2 JPS6334649 B2 JP S6334649B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- inverting
- current
- integrator
- input terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010354 integration Effects 0.000 claims description 47
- 238000001914 filtration Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 70
- 238000010586 diagram Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1213—Frequency selective two-port networks using amplifiers with feedback using transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
- H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1217—Frequency selective two-port networks using amplifiers with feedback using a plurality of operational amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H19/00—Networks using time-varying elements, e.g. N-path filters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Networks Using Active Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
- Manipulation Of Pulses (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7902759A FR2448251A1 (fr) | 1979-02-02 | 1979-02-02 | Filtre passe-bas pour signaux basse frequence |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55133122A JPS55133122A (en) | 1980-10-16 |
| JPS6334649B2 true JPS6334649B2 (cg-RX-API-DMAC7.html) | 1988-07-12 |
Family
ID=9221548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1087180A Granted JPS55133122A (en) | 1979-02-02 | 1980-02-02 | Low pass filter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4338530A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0014506B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS55133122A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1154106A (cg-RX-API-DMAC7.html) |
| DE (1) | DE3064464D1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2448251A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4805126A (en) * | 1985-11-26 | 1989-02-14 | Rodems James D | Electronic compensation network |
| NO300520B1 (no) * | 1987-07-16 | 1997-06-09 | Siemens Ag | Testinnretning for digital-ekkokompensatorer |
| US5121009A (en) * | 1990-06-15 | 1992-06-09 | Novatel Communications Ltd. | Linear phase low pass filter |
| US5361009A (en) * | 1992-06-29 | 1994-11-01 | Lu Chao C | Thyristor controller |
| US6977601B1 (en) * | 2004-01-29 | 2005-12-20 | Raytheon Company | Low power current input delta-sigma ADC using injection FET reference |
| US11114854B1 (en) * | 2021-02-11 | 2021-09-07 | King Abdulaziz University | Dual current controller of inverter interfaced renewable energy sources for accurate phase selection method and grid codes compliance |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3678416A (en) * | 1971-07-26 | 1972-07-18 | Richard S Burwen | Dynamic noise filter having means for varying cutoff point |
| US4215280A (en) * | 1978-09-01 | 1980-07-29 | Joseph Mahig | Phase responsive frequency detector |
| US4257006A (en) * | 1979-01-25 | 1981-03-17 | The Regents Of The University Of Minnesota | Integrable analog active filter and method of same |
-
1979
- 1979-02-02 FR FR7902759A patent/FR2448251A1/fr active Pending
-
1980
- 1980-01-29 DE DE8080200080T patent/DE3064464D1/de not_active Expired
- 1980-01-29 EP EP80200080A patent/EP0014506B1/fr not_active Expired
- 1980-01-31 CA CA000344836A patent/CA1154106A/en not_active Expired
- 1980-02-01 US US06/117,718 patent/US4338530A/en not_active Expired - Lifetime
- 1980-02-02 JP JP1087180A patent/JPS55133122A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1154106A (en) | 1983-09-20 |
| FR2448251A1 (fr) | 1980-08-29 |
| JPS55133122A (en) | 1980-10-16 |
| DE3064464D1 (en) | 1983-09-08 |
| US4338530A (en) | 1982-07-06 |
| EP0014506B1 (fr) | 1983-08-03 |
| EP0014506A1 (fr) | 1980-08-20 |
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