JPS633443A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS633443A JPS633443A JP14750286A JP14750286A JPS633443A JP S633443 A JPS633443 A JP S633443A JP 14750286 A JP14750286 A JP 14750286A JP 14750286 A JP14750286 A JP 14750286A JP S633443 A JPS633443 A JP S633443A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- container
- copper base
- semiconductor device
- brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 238000005219 brazing Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に放熱板に取付けられた
高周波高出力半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a high frequency, high power semiconductor device attached to a heat sink.
第2図(a)および(b)は、従来用いられているこの
種の半導体装置の構成を示す平面図および正面図である
。第2図において、セラミック外囲器201の内部には
図示しない半導体素子が収納されており、セラミック外
囲器201は下面に銅ベース204を取付けられて半導
体素子を封止して容器(ケース)を構成し、この銅ベー
スを放熱板202にロー材206を用いて固着している
。FIGS. 2(a) and 2(b) are a plan view and a front view showing the structure of a conventionally used semiconductor device of this type. In FIG. 2, a semiconductor element (not shown) is housed inside a ceramic envelope 201, and a copper base 204 is attached to the lower surface of the ceramic envelope 201 to seal the semiconductor element and form a container (case). This copper base is fixed to the heat sink 202 using brazing material 206.
上述した従来の半導体装置は、ロー材206の溶融温度
以上の温度に加熱した加熱台の上に放熱板202をのせ
、更にそのロー付は部にロー材206をのせ、ロー材2
06がとけた時を見はからって銅ベース204の突出部
204aをのせてロー付けを行っている。このロー付は
作業は、作業者がピンセットを用いて行っているため、
ケースの取付は方によって第3図に示すようにケースが
ねじれたり、または第4図に示すようにケースが傾いた
状態でロー付けされることがあり1.熟練作業者でもし
ばしばこのようる不具合を起こすことがある。またこの
ような不具合のある状態で半導体装置を用いると、半導
体素子が発生した熱を効率よく放熱板に伝達できなかっ
たり、または接地インダクタンスが増加したり、あるい
は回路基板の所定の取付は位置に固定できなくなるとい
う欠点がある。In the conventional semiconductor device described above, the heat dissipation plate 202 is placed on a heating table heated to a temperature higher than the melting temperature of the brazing material 206, and the brazing material 206 is placed on the brazing part.
When 06 is melted, the protrusion 204a of the copper base 204 is placed on it and brazed. This brazing work is done by the worker using tweezers, so
Depending on how you install the case, the case may be twisted as shown in Figure 3, or the case may be brazed in an inclined position as shown in Figure 4.1. Even experienced workers often experience such problems. Furthermore, if a semiconductor device is used with such defects, the heat generated by the semiconductor element may not be efficiently transferred to the heat sink, the grounding inductance may increase, or the circuit board may not be installed in the correct position. The disadvantage is that it cannot be fixed.
本発明が解決しようのする問題点、換言すれば本発明の
目的は、上述のような従来の半導体装置の欠点を除去し
て、ロー付は作業のとき、ケースを常に正しい位置と姿
勢に搭載できるようにして、半導体素子の発生する熱を
効率よく伝達でき、かつ接地インダクタンスの増加を除
き、しかも回路基板への取付けを確実に行うことができ
る半導体装置を提供することにある。The problem to be solved by the present invention, in other words, the purpose of the present invention is to eliminate the above-mentioned drawbacks of conventional semiconductor devices, and to always mount the case in the correct position and posture during brazing work. To provide a semiconductor device which can efficiently transmit heat generated by a semiconductor element, eliminate an increase in grounding inductance, and can be reliably attached to a circuit board.
本発明の半導体装置は、内部に半導体素子を収容するセ
ラミック外囲器と、前記セラミック外囲器の下面に取付
られて前記セラミック外囲器と容器を形成しその中央部
下面に長方形状の突出部を有する銅ベースと、中央部に
前記銅ベースの前記突出部を嵌入させる凹部を有し前記
凹部の両側方に同一の高さの支持部を有する放熱板とを
備えて構成される。The semiconductor device of the present invention includes a ceramic envelope that houses a semiconductor element therein, and a rectangular protrusion that is attached to the lower surface of the ceramic envelope to form a container together with the ceramic envelope, and that has a rectangular protrusion on the lower surface of the center thereof. and a heat sink having a recess in the center into which the protruding part of the copper base is fitted, and a heat sink having support parts of the same height on both sides of the recess.
〔実施例〕2 次に本発明の実施例について図面を参照して説明する。[Example] 2 Next, embodiments of the present invention will be described with reference to the drawings.
第1図(a)および(b)は本発明の一実施例を示す平
面図および正面図である。FIGS. 1(a) and 1(b) are a plan view and a front view showing an embodiment of the present invention.
第1図において、半導体素子を内部に収納しているセラ
ミック外囲器101の下面には、銅ベース104が取付
けられて容器(ケース)を構成している。銅ベース10
4の下面中央部には長方形状の突出部104aがあり、
この突出部104aの下面をロー材106を用いて放熱
板102に固着する。放熱板102には、容器を放熱板
102に対し水平に保つための同一の高さの2個の支持
部103が銅ベース104の突出部104aの両側に対
称的に設けられており、これによって容器が傾いて取付
けられることを防止する。容器を放熱板102に対して
所定の位置に位置決めするために、放熱板102の上面
には銅ベース104の突出部104aが嵌入する位置決
め用凹部105が設けられており、これによって容器が
常に放熱板102に対して所定の位置に位置決めされる
。In FIG. 1, a copper base 104 is attached to the lower surface of a ceramic envelope 101 that houses a semiconductor element therein to form a container (case). copper base 10
There is a rectangular protrusion 104a in the center of the lower surface of 4.
The lower surface of this protrusion 104a is fixed to the heat sink 102 using a brazing material 106. The heat sink 102 is provided with two supporting parts 103 of the same height symmetrically on both sides of the protrusion 104a of the copper base 104 in order to keep the container horizontal with respect to the heat sink 102. Prevents the container from being installed tilted. In order to position the container at a predetermined position with respect to the heat sink 102, a positioning recess 105 into which the protrusion 104a of the copper base 104 is fitted is provided on the top surface of the heat sink 102, so that the container always radiates heat. It is positioned at a predetermined position with respect to the plate 102.
閏ってねじれ等の位置ずれを生じることがない。There is no possibility of twisting or other misalignment.
なお第1図において支持部103は長方形の壁状の形状
であるが円柱状、角柱状等の形状としてもその効果は不
変である。Although the support portion 103 has a rectangular wall shape in FIG. 1, the effect remains unchanged even if the support portion 103 has a cylindrical shape, a prismatic shape, or the like.
以上詳細に説明したように、本発明の半導体装置を用い
ることにより、放熱板に設けた支持部と位置決め用凹部
とによって容器と放熱板との平行を保ちかつ取付は位置
の位置ずれを防止することができるなめ、容器と放熱板
とのロー付けを安定かつ確実に短時間で行うことができ
るという効果がある。従って生産性が向上し、かつロー
付は部の接着強度を保ち、しかも半導体素子が発生する
熱を効率よく放熱板に伝達することができるという効果
がある。また接地インダクタンスを低下させることがで
きるとともに、回路基板への半導体装置の取付けを確実
に行うことができるという効果もある。As explained in detail above, by using the semiconductor device of the present invention, the support part and the positioning recess provided in the heat sink keep the container and the heat sink parallel to each other, and the mounting position can be prevented from shifting. This has the effect that the container and the heat sink can be brazed stably and reliably in a short time. Therefore, productivity is improved, brazing maintains the adhesive strength of the parts, and heat generated by the semiconductor element can be efficiently transferred to the heat sink. Further, there is an effect that the grounding inductance can be reduced and the semiconductor device can be reliably attached to the circuit board.
第1図(a)および(b)は本発明の一実施例を示す平
面図および正面図、第2図(a)および(b)は、従来
の半導体装置の一例を示す平面図および正面図、第3図
は第2図の半導体装置がねじれた時の状態を示す平面図
、第4図は第2図の半導体装置が傾いた時の状態を示す
正面図である。
101・201・・・セラミック外囲器、102・20
2・・・放熱板、103・・・支持部、104・204
・・・銅ベース、105・・・位宜着め用凹部、106
・206・・・ロー材。
¥=N 咀
(0L)
(4辷)
10/: セラ外、7タト匣を求 7M : @
へ゛−ス/θz:n?さfrEz
/θり凋立]夫め用1瓦+6/θ3:支将仰
/θ乙S ロー社峯 2 圀
(乙(〕
CすFIGS. 1(a) and (b) are a plan view and a front view showing an embodiment of the present invention, and FIGS. 2(a) and (b) are a plan view and a front view showing an example of a conventional semiconductor device. 3 is a plan view showing the semiconductor device of FIG. 2 in a twisted state, and FIG. 4 is a front view showing the semiconductor device of FIG. 2 in a tilted state. 101/201...Ceramic envelope, 102/20
2... Heat sink, 103... Support part, 104/204
...Copper base, 105...Recessed part for positioning, 106
・206...Raw material. ¥=N Tsui (0L) (4 sides) 10/: Outside Sera, seeking 7 Tato boxes 7M: @
Heath/θz:n? safrEz
/θri rise] 1 tile for husband + 6/θ3: Branch commander rise
/θ Otsu S Roshamine 2 Kuni (Otsu () Csu
Claims (1)
記セラミック外囲器の下面に取付られて前記セラミック
外囲器と容器を形成しその中央部下面に長方形状の突出
部を有する銅ベースと、中央部に前記銅ベースの前記突
出部を嵌入させる凹部を有し前記凹部の両側方に同一の
高さの支持部を有する放熱板とを備えることを特徴とす
る半導体装置。a ceramic envelope that houses a semiconductor element therein; a copper base that is attached to the lower surface of the ceramic envelope to form a container with the ceramic envelope and has a rectangular protrusion on the lower central surface thereof; A semiconductor device comprising: a heat dissipation plate having a recessed portion in the center into which the protruding portion of the copper base is fitted, and support portions having the same height on both sides of the recessed portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14750286A JPS633443A (en) | 1986-06-23 | 1986-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14750286A JPS633443A (en) | 1986-06-23 | 1986-06-23 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS633443A true JPS633443A (en) | 1988-01-08 |
JPH0573265B2 JPH0573265B2 (en) | 1993-10-14 |
Family
ID=15431817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14750286A Granted JPS633443A (en) | 1986-06-23 | 1986-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS633443A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6618251B2 (en) | 2001-10-09 | 2003-09-09 | Fujitsu Limited | Cooling device capable of contacting target with smaller urging force |
JP2015167171A (en) * | 2014-03-04 | 2015-09-24 | 三菱電機株式会社 | semiconductor device |
-
1986
- 1986-06-23 JP JP14750286A patent/JPS633443A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6618251B2 (en) | 2001-10-09 | 2003-09-09 | Fujitsu Limited | Cooling device capable of contacting target with smaller urging force |
JP2015167171A (en) * | 2014-03-04 | 2015-09-24 | 三菱電機株式会社 | semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0573265B2 (en) | 1993-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |