JPS6333886A - Photo-semiconductor device - Google Patents
Photo-semiconductor deviceInfo
- Publication number
- JPS6333886A JPS6333886A JP61176906A JP17690686A JPS6333886A JP S6333886 A JPS6333886 A JP S6333886A JP 61176906 A JP61176906 A JP 61176906A JP 17690686 A JP17690686 A JP 17690686A JP S6333886 A JPS6333886 A JP S6333886A
- Authority
- JP
- Japan
- Prior art keywords
- light
- package
- intercepting
- intercepting plate
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 239000004020 conductor Substances 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 230000007257 malfunction Effects 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体レーザ、発光ダイオード等の発光素子
と、PINフォトダイオード、アバランシェフォトダイ
オ−2ド等の受光素子と、マルチプレクサ、デマルチプ
レクサ等を組み込んだ集積回路あるいはディスクIJ−
トな電気素子とを実装した混成集積回路に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention incorporates a light emitting element such as a semiconductor laser or a light emitting diode, a light receiving element such as a PIN photodiode or an avalanche photodiode, a multiplexer, a demultiplexer, etc. Integrated circuit or disk IJ-
The present invention relates to a hybrid integrated circuit in which various electrical elements are mounted.
従来の技術
第5図に従来の技術の一例を示す。G a A s系半
導体レーザ5o1と、光パワーモニター用のフォトダイ
オード503とシリコンを用すた集積回路50E5がパ
ッケージ507上にハイブリッドで構成されたもので、
各素子は、金またはアルミニウムのワイヤにより相互に
あるいはワイヤボンド用パッド606に接続される。半
導体レーザ501の光出力は光ファイバ609によシ外
部に取り出される。Prior Art FIG. 5 shows an example of the prior art. It is a hybrid configuration in which a GaAs semiconductor laser 5o1, a photodiode 503 for optical power monitoring, and an integrated circuit 50E5 using silicon are mounted on a package 507.
Each device is connected to each other or to wire bond pads 606 by gold or aluminum wires. The optical output of the semiconductor laser 501 is extracted to the outside through an optical fiber 609.
第6図に従来の技術の他の一例を示す。G a A s
系あるいはGeのフォトダイオード601がシリコンを
用いた集積回路602の上にボンディングされており、
フォトダイオードら01には光ファイバ603より光信
号が入射する。FIG. 6 shows another example of the prior art. Ga As
A photodiode 601 made of silicon or Ge is bonded onto an integrated circuit 602 using silicon.
An optical signal enters the photodiode 01 from an optical fiber 603.
発明が解決しようとする問題点
ところが、上記のような構成の場合、半導体レーザ50
1からの出力光や、光ファイバからの光信号(第6図中
に矢印で示す)が、半導体素子やパッケージの上蓋(第
5図中には図示されていない)によって反射あるいは散
乱され、集積回路505.602に入射し、正孔と電子
を発生させ、誤動作の原因となる危険性があった。また
、第5図中のワイヤ510のように長いワイヤの場合、
高周波の信号が通りにくぐなる。さらに、半導体レーザ
601の長寿命化のために不活性ガスを充満させるとき
に、パッケージ内全部に充満させる必要があった。Problems to be Solved by the Invention However, in the case of the above configuration, the semiconductor laser 50
The output light from 1 and the optical signal from the optical fiber (indicated by arrows in Fig. 6) are reflected or scattered by the semiconductor element and the top cover of the package (not shown in Fig. 5), and are integrated. There was a risk that the light would enter the circuits 505 and 602, generate holes and electrons, and cause malfunction. Furthermore, in the case of a long wire like the wire 510 in FIG.
High frequency signals pass through the street. Furthermore, when filling the inert gas to extend the life of the semiconductor laser 601, it was necessary to fill the entire inside of the package.
問題点を解決するための手段
本発明は、上記のような問題点を解決するために、電気
素子や集積回路と、発光または受光素子の間に遮光板を
設置し、光が電気素子や集積回路に入射しなりようにす
るものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a light shielding plate between an electric element or integrated circuit and a light emitting or light receiving element, so that light does not pass through the electric element or integrated circuit. This prevents the light from entering the circuit.
作 用
本発明によれば、遮光板により光による誤動作の危険性
は除去される。また、遮光板中に設けた配線によシ素子
の電気的配線が容易になり、ワイヤ長を短くできるため
高周波も通り易くなる。さらに、遮光板を用いてパッケ
ージ内を選択的て不活性ガス等で充満でき、ガスの使用
量を低減できる。Function According to the present invention, the risk of malfunction due to light is eliminated by the light shielding plate. Further, the wiring provided in the light shielding plate facilitates electrical wiring of the elements, and the length of the wire can be shortened, making it easier for high frequencies to pass through. Furthermore, the inside of the package can be selectively filled with an inert gas or the like using a light shielding plate, thereby reducing the amount of gas used.
実施例 第1図は、本発明の一実施例を示すものである。Example FIG. 1 shows an embodiment of the present invention.
半導体レーザ101はシリコン板102の上にボンディ
ングされている。モニター用フォトダイオード103は
第2図に示すような傾斜した台104の上にボンディン
グされている。105は、マルチプレクサであシ複数の
入力信号を変換して高速の信号を半導体レーザ1o1に
送る。これらの素子とリード線106はパッケージ10
7内の配線108と、ワイヤ109によって電気的に接
続される。リード線106と配線108は、高周波に対
応した平板型になっている。半導体レーザ101の出力
光は光ファイバ110にょシ外部に取り出される。遮光
板はこの例の場合111の1枚だけである。この中を通
る配線202は第2図に示すように遮光板201’i貫
通している。また、上蓋206は接着剤によってパッケ
ージ内を密封している。パッケージ内は窒素で充満され
ている。A semiconductor laser 101 is bonded onto a silicon plate 102. A monitor photodiode 103 is bonded onto an inclined table 104 as shown in FIG. A multiplexer 105 converts a plurality of input signals and sends a high-speed signal to the semiconductor laser 1o1. These elements and lead wires 106 are connected to the package 10.
It is electrically connected to the wiring 108 in 7 by a wire 109. The lead wire 106 and the wiring 108 are of a flat plate type that can handle high frequencies. The output light of the semiconductor laser 101 is extracted to the outside through an optical fiber 110. In this example, there is only one light shielding plate 111. The wiring 202 passing through this passes through the light shielding plate 201'i as shown in FIG. Further, the top lid 206 seals the inside of the package with an adhesive. The inside of the package is filled with nitrogen.
第3図は、本発明の他の実施例の部分を示す。FIG. 3 shows parts of another embodiment of the invention.
構成は第1図、第2図で示した実施例とほぼ同じであり
、差異部分のみを第3図に示した。同図aに示すように
、遮光板301は切れこみ302金持ち、これを用いて
同図すのように遮光板3C)1の両側にある素子303
.304iワイヤ305で配線する。尚、切れこみ30
2の側面には、光を吸収する塗料が塗布されている。The configuration is almost the same as the embodiment shown in FIGS. 1 and 2, and only the differences are shown in FIG. 3. As shown in the figure a, the light shielding plate 301 has notches 302, which are used to connect the elements 303 on both sides of the light shielding plate 3C)1 as shown in the same figure.
.. Wire with 304i wire 305. In addition, notch 30
The sides of 2 are coated with light-absorbing paint.
第4図は、本発明による第3の実施例のワイヤ配線前の
状態の上面図でちる。本実施例は光中継器を構成してお
り、フォトダイオード4o1に入射した光は、電気に変
換され波形整形用集積回路402により、波形整形及び
増幅全されたあと、 7半導体レーザ403により再
び光として出射される。403は、モノリシックにフォ
トダイオードが集積された素子であり、これを用いて自
動光出力強度制御が行なえる。光入力、光出力には、ロ
ッドレンズ405と光コネクタ406を備えた光入力部
と光出力部に、光ファイバを接続することにより成され
る。FIG. 4 is a top view of the third embodiment of the present invention before wire wiring. This embodiment constitutes an optical repeater, and the light incident on the photodiode 4o1 is converted into electricity, waveform-shaped and amplified by the waveform-shaping integrated circuit 402, and then converted into light again by the 7 semiconductor laser 403. It is emitted as 403 is an element in which photodiodes are monolithically integrated, and automatic light output intensity control can be performed using this element. Optical input and output are achieved by connecting optical fibers to an optical input section and an optical output section that are provided with a rod lens 405 and an optical connector 406.
なお、上記の実施例において、発光素子として発光ダイ
オード、外部変調器付半導体レーザ、あるいはモニター
用受光素子と共に専用パッケージに組み込まれた半導体
レーザ等を用いてもなんら支障はない。また、リード線
として平板形以外のものを用いてもなんら支障はない。In the above embodiments, there is no problem in using a light emitting diode, a semiconductor laser with an external modulator, a semiconductor laser incorporated in a dedicated package together with a monitoring light receiving element, or the like as the light emitting element. Further, there is no problem in using a lead wire other than a flat lead wire.
また、集積回路としてデマルチプレクサ、識別器等を用
いる場合に、同様の構成を用いてもなんら支障はない。Moreover, when using a demultiplexer, a discriminator, etc. as an integrated circuit, there is no problem even if a similar configuration is used.
発明の効果
本発明によれば、光入射による集積回路の誤動作の防止
が容易に行えるため、実用的に有用である。Effects of the Invention According to the present invention, it is possible to easily prevent malfunction of an integrated circuit due to light incidence, and therefore it is practically useful.
第1図は本発明の一実施例における光半導体装置を示す
上面図、第2図は第1図に示す本発明の第3図は本発明
の他の実施例における′半導体装置の一部分を示す図、
第4図は本発明の第3の実施例における光半導体装置の
上面図、第5図及び第6図は従来の構成例を示す図であ
る。
101・・・・・・半導体レーザ、103・・・・・・
フォトダイオード、109・・・・・・ワイヤ、111
・・・・遮光板、305・・・・・ワイヤ。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名(o
イ゛−+4f1≦し−リ
ず02−、リコノ工反
103−−)λYデイN−ド
104−一一号
イ07・−一へ)ケづ
ros・−一均乙+詐と
ヅhq−一ワイY
410−一−に、7アイ八・
イfイ・−−ゾL六”、v;−
qo(−−一罷氾靭
2fl14・−−マメしア7ルフサ
2os−−−4−4禾し−す゛
30イー−a六−+1
勿2−一づ刀札:Jンデ
第4図 ”Ql゛−7”Y?−何−Y゛405
−−−ロ片しぐ
+og−−−糺口今7り
501・−4−轡外し一ヂ
502〜−−シソコン1反
503−−−71LQ”イX−1′
5図−台
507−−−ノ\“ッター−シ
5oδ−・−リート彰に
5D9゛−に−774ノ\′
第 6 トill
coイー−−フ7Yグ・<
ギ−・。
’;02−+ n 回)A
CO3−・−A九ファ1ツマ
co+−rK
COS−一−バッT−ジFIG. 1 is a top view showing an optical semiconductor device according to an embodiment of the present invention, and FIG. 2 is a top view showing a semiconductor device according to another embodiment of the present invention. figure,
FIG. 4 is a top view of an optical semiconductor device according to a third embodiment of the present invention, and FIGS. 5 and 6 are diagrams showing conventional configuration examples. 101... Semiconductor laser, 103...
Photodiode, 109...Wire, 111
... Light shielding plate, 305 ... Wire. Name of agent: Patent attorney Toshio Nakao and one other person (o
I゛-+4f1≦shi-rizu 02-, rikono-kotan 103--) λY Day N-do 104-11 No. I07-1) Kezu ros・-uniform Otsu+fraud and zuhq- 1 Y Y 410-1-, 7 Ai 8, If I--Z L6", v;- qo (--Ichikki Flood 2fl14.--Mameshi A7 Lufsa 2os---4- 4 禾し-Su゛30E-a6-+1 2-1zu sword card: Jnde 4th figure ``Ql゛-7''Y?-What-Y゛405
---Rokashigu+og---Tsuguchi now 7-ri 501・-4-Remove the heel 1ji 502~--Sisokon 1 anti-503---71LQ"IX-1' 5 figure-stand 507-- -ノ\``ter-shi5oδ-・-rito Akira 5D9゛-ni-774ノ\' 6th ill
coE-F7YG・<
G-. '; 02-+ n times) A CO3-・-A9FA 1 knob co+-rK COS-1-badge T-ge
Claims (3)
素子を含む複数の半導体素子の間に、少なくとも一枚の
遮光板を設置してなることを特徴とする光半導体装置。(1) An optical semiconductor device characterized in that at least one light shielding plate is installed between a plurality of semiconductor elements including at least one semiconductor element for light emission or light reception.
子を相互に電気的に接続することを特徴とする特許請求
の範囲第1項記載の光半導体装置。(2) The optical semiconductor device according to claim 1, wherein the semiconductor elements are electrically connected to each other using a conductor provided through the light shielding plate.
と底板と上蓋とによって密封され、且つ窒素あるいはそ
の他の不活性ガス中に置かれていることを特徴とする特
許請求の範囲第1項または第2項記載の光半導体装置。(3) Claim 1, characterized in that at least the semiconductor element for light emission is sealed by a light shielding plate, an outer wall, a bottom plate, and a top cover, and is placed in nitrogen or other inert gas. Or the optical semiconductor device according to item 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17690686A JPH0738484B2 (en) | 1986-07-28 | 1986-07-28 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17690686A JPH0738484B2 (en) | 1986-07-28 | 1986-07-28 | Optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6333886A true JPS6333886A (en) | 1988-02-13 |
JPH0738484B2 JPH0738484B2 (en) | 1995-04-26 |
Family
ID=16021822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17690686A Expired - Lifetime JPH0738484B2 (en) | 1986-07-28 | 1986-07-28 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0738484B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01199483A (en) * | 1987-12-18 | 1989-08-10 | Hitachi Ltd | Drive circuit built-in semiconductor laser module |
JP2004185040A (en) * | 2000-10-03 | 2004-07-02 | Fujitsu Ltd | Optical modulator |
-
1986
- 1986-07-28 JP JP17690686A patent/JPH0738484B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01199483A (en) * | 1987-12-18 | 1989-08-10 | Hitachi Ltd | Drive circuit built-in semiconductor laser module |
JP2004185040A (en) * | 2000-10-03 | 2004-07-02 | Fujitsu Ltd | Optical modulator |
Also Published As
Publication number | Publication date |
---|---|
JPH0738484B2 (en) | 1995-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |