JPS6213088A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPS6213088A JPS6213088A JP15158485A JP15158485A JPS6213088A JP S6213088 A JPS6213088 A JP S6213088A JP 15158485 A JP15158485 A JP 15158485A JP 15158485 A JP15158485 A JP 15158485A JP S6213088 A JPS6213088 A JP S6213088A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- submount
- semiconductor
- laser
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光半導体装置、特に光通信等に用いる送信機
の発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a light emitting semiconductor device, and particularly to a light emitting element of a transmitter used in optical communications and the like.
従来の技術
従来の発光半導体装置では第２図に示すように半導体レ
ーザ２１がサブマウント２２上に設置されている。サブ
マウント２２はさらにステム２３上に取付けられている
。ステム２３内には半導体レーザ２１から発射された光
の一部をモニタとして受光出来るようにモニタ用受光素
子２４が取付けられている。ステム近傍には電極を外部
に取り出すためのリード２５が形成されていて、半導体
レーザ２１とモニタ用受光素子２４とへの電気的接続を
ＡＵ線２６等を用いて行っている。半導体レーザ２１は
外部に設けられた駆動回路２７により駆動される。半導
体レーザ２１の発光出力はモニタ用受光素子で受光され
電気信号として増幅機２８で増幅され駆動回路２７に信
号として与えら３へ−７
れる。また半導体レーザ２１は信頼性向上のため恒温状
態で使用される。そのため半導体レーザ２１の温度測定
のためステム２３上にサーミスタ２９が取付けられてい
る。サーミスタ２９により測定された温度の信号により
温度制御器３０を用いてステム２３の温度が一定に保た
れるよう構成されていた。2. Description of the Related Art In a conventional light emitting semiconductor device, a semiconductor laser 21 is mounted on a submount 22, as shown in FIG. Submount 22 is further mounted on stem 23. A monitor light receiving element 24 is installed within the stem 23 so as to be able to receive a portion of the light emitted from the semiconductor laser 21 as a monitor. A lead 25 for taking out the electrode to the outside is formed near the stem, and electrical connection to the semiconductor laser 21 and the monitoring light receiving element 24 is made using an AU wire 26 or the like. The semiconductor laser 21 is driven by a drive circuit 27 provided externally. The light emission output of the semiconductor laser 21 is received by a monitoring light receiving element, amplified as an electric signal by an amplifier 28, and given as a signal to a drive circuit 27, which is then sent to -7. Further, the semiconductor laser 21 is used in a constant temperature state to improve reliability. Therefore, a thermistor 29 is mounted on the stem 23 to measure the temperature of the semiconductor laser 21. The temperature of the stem 23 was kept constant using a temperature controller 30 based on a temperature signal measured by the thermistor 29.
発明が解決しようとする問題点
このような従来の発光半導体装置では、外部回路構成が
複雑になるばかりでなく、半導体レーザの温度測定もサ
ブマウントを介しているため正確に行なえないと言う欠
点があった。Problems to be Solved by the Invention These conventional light emitting semiconductor devices have the disadvantage that not only the external circuit configuration is complicated, but also the temperature of the semiconductor laser cannot be measured accurately because it is via a submount. there were.
本発明はかかる点に鑑みてなされたもので、簡易な構成
で、外部回路が少なく、半導体レーザの温度測定も容易
に行うことができる発光半導体装置を提供することを目
的としている。The present invention has been made in view of these points, and an object of the present invention is to provide a light emitting semiconductor device that has a simple configuration, has few external circuits, and can easily measure the temperature of a semiconductor laser.
問題点を解決するための手段
本発明は上記問題点を解決するため、サブマウントに半
導体材料を用いることにより、サブマウント内に所定の
半導体集積回路を形成したものである。Means for Solving the Problems In order to solve the above problems, the present invention uses a semiconductor material for the submount to form a predetermined semiconductor integrated circuit within the submount.
作用
本発明は上記した構成により、サブマウント内に形成さ
れた半導体素子により、半導体レーザの駆動、半導体レ
ーザの精度よい温度測定を行うことが出来、さらに半導
体レーザの発光波長の波長帯が受光できる材料をサブマ
ウントに選ぶことにより、半導体レーザの発光出力を測
定することが出来る。Effects of the present invention With the above-described configuration, the semiconductor element formed in the submount can drive the semiconductor laser and accurately measure the temperature of the semiconductor laser, and can also receive light in the wavelength band of the emission wavelength of the semiconductor laser. By selecting the material for the submount, it is possible to measure the emission output of the semiconductor laser.
実施例
第１図は本発明の発光半導体装置の一実施例を示す斜線
図である。第１図において半導体レーザ１がシリコン基
板で形成されたサブマウント２に接合面側をサブマウン
ト２と接するようにダイスボンドが行々われている。サ
ブマウント表面にはワイヤボンド用のパッド３が形成さ
れていて、ワイヤ４（ＡＵ線）を介してリード６に接続
されている。半導体レーザ１の一方の電極はワイヤ４を
通して外部へ接続されているが、他方の電極は、サブマ
ウント上に形成されている所定の半導体装６ へ−７
子を用いた半導体集積回路７へ配線金属８を介して接続
されている。配線金属としては金を用いることにより、
半導体レーザ１の接合面側にスズ膜を蒸着法により形成
しておくことにより２４０″Ｃの加温により金スズ共晶
により容易に接着することができる。Embodiment FIG. 1 is a diagonal diagram showing an embodiment of the light emitting semiconductor device of the present invention. In FIG. 1, a semiconductor laser 1 is die-bonded to a submount 2 formed of a silicon substrate so that its bonding surface side is in contact with the submount 2. A pad 3 for wire bonding is formed on the surface of the submount, and is connected to a lead 6 via a wire 4 (AU wire). One electrode of the semiconductor laser 1 is connected to the outside through a wire 4, while the other electrode is connected to a semiconductor integrated circuit 7 using a predetermined semiconductor device 6 formed on a submount. They are connected via metal 8. By using gold as the wiring metal,
By forming a tin film on the bonding surface side of the semiconductor laser 1 by vapor deposition, it is possible to easily bond the tin film with gold-tin eutectic by heating at 240''C.
半導体集積回路７内には半導体レーザ１の直下または近
傍に位置するように温度検出用ダイオード９が配置され
ている。A temperature detection diode 9 is arranged in the semiconductor integrated circuit 7 so as to be located directly below or near the semiconductor laser 1 .
また半導体レーザ１が波長１・１μｍ以下のム／ Ｇａ
Ａｇ、 Ｐ ／ （、ａムＳ 等で構成されていて発
光波長が１・１μｍ以下である場合には、シリコンのサ
ブマウント２上に形成されたモニタ用受光素子１０によ
り発光出力１１の一部を受光することにより半導体レー
ザ１の光出力を測定することができる。Further, the semiconductor laser 1 has a wavelength of 1.1 μm or less.
When the light emitting wavelength is 1.1 μm or less and is composed of Ag, P/(, am S, etc.), a part of the light emitting output 11 is transmitted by the monitor light receiving element 10 formed on the silicon submount 2. By receiving the light, the optical output of the semiconductor laser 1 can be measured.
半導体素子を用いて半導体集積回路としては、温度検出
用ダイオード９、モニタ用受光素子１０゜半導体レーザ
を駆動するための駆動回路、および入力された信号を処
理するための論理回路等にょ６ ヘ−ジ
り構成される。A semiconductor integrated circuit using semiconductor elements includes a temperature detection diode 9, a monitoring light receiving element 10, a drive circuit for driving a semiconductor laser, a logic circuit for processing input signals, etc. It is composed of jiri.
発明の効果
以上述べて来たように本発明によれば外部回路を用いる
ことなく、発光半導体装置が容易に構成でき、半導体レ
ーザの温度測定も正確に行うことができ、加えて半導体
レーザの波長によっては、モニタ用受光素子も含有する
装置構成とすることが可能となり有用である。Effects of the Invention As described above, according to the present invention, a light emitting semiconductor device can be easily constructed without using an external circuit, the temperature of a semiconductor laser can be accurately measured, and in addition, the wavelength of the semiconductor laser can be accurately measured. In some cases, it is possible and useful to have a device configuration that also includes a monitoring light-receiving element.
第１図は本発明の一実施例における発光半導体装置の斜
視図、第２図は従来の発光半導体装置の構成図である。
１．２１・・・・・・半導体レーザ、２．２１・・・・
・・サブマウント、４．２６・・・・・・Ａｕ線、ｅ＋
２５・・・・・・リード、９・・・・・・温度検出用ダ
イオード、１０．２４・・・・・・モニタ用受光素子。FIG. 1 is a perspective view of a light emitting semiconductor device according to an embodiment of the present invention, and FIG. 2 is a configuration diagram of a conventional light emitting semiconductor device. 1.21... Semiconductor laser, 2.21...
...Submount, 4.26...Au wire, e+
25...Lead, 9...Temperature detection diode, 10.24...Monitor light receiving element.
Claims (4)
けられた半導体発光素子を有し、前記サブマウント内に
半導体集積素子が形成されている発光半導体装置。(1) A light emitting semiconductor device having a semiconductor light emitting element provided in close contact with a submount using a semiconductor material, and a semiconductor integrated element being formed within the submount.
集積素子の配線金属上に、前記配線金属の一部を半田剤
として取付けられている特許請求の範囲第１項記載の発
光半導体装置。(2) The light emitting semiconductor device according to claim 1, wherein the semiconductor light emitting element is attached to a metal wiring of an integrated element formed on a submount, using a part of the metal wiring as a solder.
温度検出素子の直上または近傍に設置された特許請求の
範囲第１項記載の発光半導体装置。(3) The light emitting semiconductor device according to claim 1, wherein the semiconductor light emitting element is installed directly above or near a temperature detecting element formed in the submount.
り、かつ、サブマウントの半導体材料がシリコンであっ
て、前記サブマウント内の、半導体発光素子の光が受光
出来る位置に受光素子が形成されている特許請求の範囲
第１項記載の発光半導体装置。(4) The emission wavelength of the semiconductor light emitting element is 1.1 μm or less, and the semiconductor material of the submount is silicon, and a light receiving element is formed in the submount at a position where light from the semiconductor light emitting element can be received. A light emitting semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15158485A JPS6213088A (en) | 1985-07-10 | 1985-07-10 | Light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15158485A JPS6213088A (en) | 1985-07-10 | 1985-07-10 | Light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6213088A true JPS6213088A (en) | 1987-01-21 |
Family
ID=15521707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15158485A Pending JPS6213088A (en) | 1985-07-10 | 1985-07-10 | Light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6213088A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63265483A (en) * | 1987-04-23 | 1988-11-01 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPH10126002A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electron Corp | Optical transmission module |
| US6184543B1 (en) | 1997-04-28 | 2001-02-06 | Nec Corporation | Optical semiconductor device and method for fabricating the same |
| JP2009206185A (en) * | 2008-02-26 | 2009-09-10 | Panasonic Electric Works Co Ltd | Light emitting device |
| JP2020145385A (en) * | 2019-03-08 | 2020-09-10 | 株式会社堀場製作所 | Semiconductor laser device and analyzer |
-
1985
- 1985-07-10 JP JP15158485A patent/JPS6213088A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63265483A (en) * | 1987-04-23 | 1988-11-01 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPH10126002A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electron Corp | Optical transmission module |
| US6184543B1 (en) | 1997-04-28 | 2001-02-06 | Nec Corporation | Optical semiconductor device and method for fabricating the same |
| US6319746B1 (en) | 1997-04-28 | 2001-11-20 | Nec Corporation | Optical semiconductor device and method for fabricating the same |
| JP2009206185A (en) * | 2008-02-26 | 2009-09-10 | Panasonic Electric Works Co Ltd | Light emitting device |
| JP2020145385A (en) * | 2019-03-08 | 2020-09-10 | 株式会社堀場製作所 | Semiconductor laser device and analyzer |
| US11949210B2 (en) | 2019-03-08 | 2024-04-02 | Horiba, Ltd. | Semiconductor laser device and analysis apparatus |
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