JPS6332446U - - Google Patents

Info

Publication number
JPS6332446U
JPS6332446U JP12538086U JP12538086U JPS6332446U JP S6332446 U JPS6332446 U JP S6332446U JP 12538086 U JP12538086 U JP 12538086U JP 12538086 U JP12538086 U JP 12538086U JP S6332446 U JPS6332446 U JP S6332446U
Authority
JP
Japan
Prior art keywords
jig
ion
semiconductor wafer
implanted
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12538086U
Other languages
Japanese (ja)
Other versions
JPH0449815Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12538086U priority Critical patent/JPH0449815Y2/ja
Publication of JPS6332446U publication Critical patent/JPS6332446U/ja
Application granted granted Critical
Publication of JPH0449815Y2 publication Critical patent/JPH0449815Y2/ja
Expired legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る半導体製造用治具の一実
施例を示す正面図、第2図は第1図の一部の拡大
図、第3図は第2図のA―A線に沿う断面図、第
4図及び第5図は第3図の部分でのイオン注入前
及びイオン注入後の断面図である。第6図は従来
の治具を使用した半導体製造装置(イオン注入装
置)の概略平面図、第7図は第6図の装置の一部
側面図、第8図は第6図の装置における治具の拡
大正面図である。 1……半導体ウエーハ、9……イオンビーム、
16……治具(ウエーハホルダ)、17……イオ
ン注入済み表示手段(形状記憶合金)。
Fig. 1 is a front view showing an embodiment of the semiconductor manufacturing jig according to the present invention, Fig. 2 is an enlarged view of a part of Fig. 1, and Fig. 3 is taken along line A-A in Fig. 2. 4 and 5 are cross-sectional views of the portion shown in FIG. 3 before and after ion implantation. FIG. 6 is a schematic plan view of a semiconductor manufacturing device (ion implantation device) using a conventional jig, FIG. 7 is a partial side view of the device shown in FIG. 6, and FIG. It is an enlarged front view of a tool. 1... Semiconductor wafer, 9... Ion beam,
16... jig (wafer holder), 17... ion implanted display means (shape memory alloy).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] イオンビームの注入を受ける半導体ウエーハを
保持する治具の所定部分に、半導体ウエーハのイ
オン注入前とイオン注入後における治具の温度変
化で表示状態が変わるイオン注入済み表示手段を
付設したことを特徴とする半導体製造用治具。
A feature is that an ion implanted display means is attached to a predetermined part of a jig that holds a semiconductor wafer to be implanted with an ion beam, and the display state changes depending on the temperature change of the jig before and after ion implantation of the semiconductor wafer. Jig for semiconductor manufacturing.
JP12538086U 1986-08-15 1986-08-15 Expired JPH0449815Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12538086U JPH0449815Y2 (en) 1986-08-15 1986-08-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12538086U JPH0449815Y2 (en) 1986-08-15 1986-08-15

Publications (2)

Publication Number Publication Date
JPS6332446U true JPS6332446U (en) 1988-03-02
JPH0449815Y2 JPH0449815Y2 (en) 1992-11-24

Family

ID=31018233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12538086U Expired JPH0449815Y2 (en) 1986-08-15 1986-08-15

Country Status (1)

Country Link
JP (1) JPH0449815Y2 (en)

Also Published As

Publication number Publication date
JPH0449815Y2 (en) 1992-11-24

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