JPS6332255B2 - - Google Patents
Info
- Publication number
- JPS6332255B2 JPS6332255B2 JP3890482A JP3890482A JPS6332255B2 JP S6332255 B2 JPS6332255 B2 JP S6332255B2 JP 3890482 A JP3890482 A JP 3890482A JP 3890482 A JP3890482 A JP 3890482A JP S6332255 B2 JPS6332255 B2 JP S6332255B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- conductive layer
- control electrode
- pipe
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W72/851—
-
- H10W72/30—
-
- H10W76/138—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H10W72/073—
-
- H10W72/07337—
-
- H10W72/07533—
-
- H10W72/5363—
Landscapes
- Thyristors (AREA)
- Die Bonding (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57038904A JPS58154239A (ja) | 1982-03-09 | 1982-03-09 | 半導体装置 |
| DE19833308389 DE3308389A1 (de) | 1982-03-09 | 1983-03-09 | Halbleitervorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57038904A JPS58154239A (ja) | 1982-03-09 | 1982-03-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58154239A JPS58154239A (ja) | 1983-09-13 |
| JPS6332255B2 true JPS6332255B2 (index.php) | 1988-06-29 |
Family
ID=12538177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57038904A Granted JPS58154239A (ja) | 1982-03-09 | 1982-03-09 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58154239A (index.php) |
| DE (1) | DE3308389A1 (index.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2215125B (en) * | 1988-02-22 | 1991-04-24 | Mitsubishi Electric Corp | Semiconductor device |
| DE19615112A1 (de) * | 1996-04-17 | 1997-10-23 | Asea Brown Boveri | Leistungshalbleiterbauelement |
| CN110026640A (zh) * | 2019-05-15 | 2019-07-19 | 江阴市赛英电子股份有限公司 | 一种具有阻银结构的薄型电极钎焊陶瓷管壳 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1564444C3 (de) * | 1966-03-24 | 1978-05-11 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Halbleiteranordnung mit einem isolierenden Träger |
| SE373689B (sv) * | 1973-06-12 | 1975-02-10 | Asea Ab | Halvledaranordning bestaende av en tyristor med styrelektrod, vars halvledarskiva er innesluten i en dosa |
| DE2534703C3 (de) * | 1975-08-04 | 1980-03-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
| US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
| DE2855493A1 (de) * | 1978-12-22 | 1980-07-03 | Bbc Brown Boveri & Cie | Leistungs-halbleiterbauelement |
-
1982
- 1982-03-09 JP JP57038904A patent/JPS58154239A/ja active Granted
-
1983
- 1983-03-09 DE DE19833308389 patent/DE3308389A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3308389A1 (de) | 1983-11-17 |
| DE3308389C2 (index.php) | 1989-01-05 |
| JPS58154239A (ja) | 1983-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4996586A (en) | Crimp-type semiconductor device having non-alloy structure | |
| US3020454A (en) | Sealing of electrical semiconductor devices | |
| US2756374A (en) | Rectifier cell mounting | |
| US4313128A (en) | Compression bonded electronic device comprising a plurality of discrete semiconductor devices | |
| JP2000036548A (ja) | 二重構造の貫通接続組立体およびその製造方法 | |
| US3413532A (en) | Compression bonded semiconductor device | |
| US4673961A (en) | Pressurized contact type double gate static induction thyristor | |
| US3331996A (en) | Semiconductor devices having a bottom electrode silver soldered to a case member | |
| US3265805A (en) | Semiconductor power device | |
| US3476986A (en) | Pressure contact semiconductor devices | |
| JPS6332255B2 (index.php) | ||
| US3950142A (en) | Lead assembly for semiconductive device | |
| US3528102A (en) | Semiconductor header assembly and method of fabrication thereof | |
| US3735208A (en) | Thermal fatigue lead-soldered semiconductor device | |
| US3218524A (en) | Semiconductor devices | |
| US3068382A (en) | Hermetically sealed semiconductor devices | |
| US2965818A (en) | Manufacture of semiconductor rectifier devices | |
| US2869056A (en) | Semi-conductor device and method of making | |
| US6476464B1 (en) | Low resistance hermetic lead structure | |
| US3147361A (en) | Vacuum tight joint and method of making such joint | |
| JPS6233327Y2 (index.php) | ||
| JP2003309133A (ja) | 高耐熱半導体素子及びこれを用いた電力変換器 | |
| JPS63262858A (ja) | 半導体装置 | |
| JPS5951741B2 (ja) | 樹脂封止形半導体装置 | |
| US2438562A (en) | Seal for electric discharge devices and method of manufacture |